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61. 发明申请

US20100231774A1 SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF, AND IMAGING SYSTEM 有权
标题翻译：固态成像装置，其驱动方法和成像系统
公开(公告)号：US20100231774A1
公开(公告)日：2010-09-16
申请号：US12712365
申请日：2010-02-25
申请人： Kazuaki Tashiro
发明人： Kazuaki Tashiro
IPC分类号： H04N5/335 , H04N5/232
CPC分类号： H04N5/3765 , G01S17/10 , G01S17/89 , H01L27/14609 , H01L27/14612 , H01L27/14641 , H04N5/3592 , H04N5/37457 , H04N5/378
摘要： A solid-state imaging device comprises a first pixel group includes a first photoelectric conversion unit that converts into electric charges reflection light pulses from an object irradiated with an irradiation light pulse, a first electric charge accumulation unit accumulating the electric charges in synchrony with turning on the irradiation light pulses, and a first reset unit resetting the electric charges; and a second pixel group includes a second photoelectric conversion unit that converts the reflection light into electric charges, a second electric charge accumulation unit that accumulates the electric charges synchronously with a switching the irradiation light pulses from on to off, and a second reset unit that releases a reset of the electric charges converted by the second photoelectric conversion unit.
摘要翻译：一种固态成像装置，包括：第一像素组，包括：第一光电转换单元，其将从照射光脉冲照射的物体转换为电荷反射光脉冲;第一电荷累积单元，与导通同步地积累电荷照射光脉冲和复位电荷的第一复位单元; 并且第二像素组包括将反射光转换成电荷的第二光电转换单元，与从接通切换到关闭的照射光脉冲同步地累积电荷的第二电荷累积单元和第二复位单元，释放由第二光电转换单元转换的电荷的复位。

62. 发明授权

US06559452B1 Image input apparatus 有权
标题翻译：图像输入装置
公开(公告)号：US06559452B1
公开(公告)日：2003-05-06
申请号：US09631706
申请日：2000-08-03
申请人： Kazuaki Tashiro
发明人： Kazuaki Tashiro
IPC分类号： G01T124
CPC分类号： H01L27/14663 , G01T1/2928
摘要： An image input apparatus having a plurality of sensors each including a pixel area in which a plurality of pixels are arranged, is provided. The image input apparatus includes: a first group including one or a plurality of pixel areas; and a second group including a plurality of pixel areas arranged adjacently to each other surrounding one or the plurality of pixel areas of the first group, as viewed along an image input direction, wherein the plurality of pixel areas of the second group are arranged nearer to an image input surface than one or the plurality of pixel areas of the first group.
摘要翻译：提供具有多个传感器的图像输入装置，每个传感器包括排列有多个像素的像素区域。图像输入装置包括：第一组，包括一个或多个像素区域; 以及第二组，其包括沿着图像输入方向观察的围绕所述第一组的一个或多个像素区域彼此相邻布置的多个像素区域，其中所述第二组的所述多个像素区域被布置为更接近图像输入表面比第一组的一个或多个像素区域。

63. 发明授权

US09025059B2 Solid-state imaging device, driving method thereof, and imaging system 有权
标题翻译：固态成像装置及其驱动方法和成像系统
公开(公告)号：US09025059B2
公开(公告)日：2015-05-05
申请号：US12712365
申请日：2010-02-25
申请人： Kazuaki Tashiro
发明人： Kazuaki Tashiro
IPC分类号： H04N5/335 , H04N5/232 , H04N5/222 , H04N5/3745 , G01S17/10 , G01S17/89 , H01L27/146 , H04N5/359
CPC分类号： H04N5/3765 , G01S17/10 , G01S17/89 , H01L27/14609 , H01L27/14612 , H01L27/14641 , H04N5/3592 , H04N5/37457 , H04N5/378
摘要： A solid-state imaging device comprises a first pixel group includes a first photoelectric conversion unit that converts into electric charges reflection light pulses from an object irradiated with an irradiation light pulse, a first electric charge accumulation unit accumulating the electric charges in synchrony with turning on the irradiation light pulses, and a first reset unit resetting the electric charges; and a second pixel group includes a second photoelectric conversion unit that converts the reflection light into electric charges, a second electric charge accumulation unit that accumulates the electric charges synchronously with a switching the irradiation light pulses from on to off, and a second reset unit that releases a reset of the electric charges converted by the second photoelectric conversion unit.
摘要翻译：一种固态成像装置，包括：第一像素组，包括：第一光电转换单元，其将从照射光脉冲照射的物体转换为电荷反射光脉冲;第一电荷累积单元，与导通同步地积累电荷照射光脉冲和复位电荷的第一复位单元; 并且第二像素组包括将反射光转换成电荷的第二光电转换单元，与从接通切换到关闭的照射光脉冲同步地累积电荷的第二电荷累积单元和第二复位单元，释放由第二光电转换单元转换的电荷的复位。

64. 发明授权

US08501520B2 Manufacturing method for a solid-state image sensor 有权
标题翻译：固态图像传感器的制造方法
公开(公告)号：US08501520B2
公开(公告)日：2013-08-06
申请号：US12697420
申请日：2010-02-01
申请人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
发明人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L51/40
CPC分类号： H01L27/14689 , H01L21/26513 , H01L21/324 , H01L27/14621 , H01L27/14643 , H01L27/14698
摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.
摘要翻译：一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。

65. 发明申请

US20100203667A1 MANUFACTURING METHOD FOR A SOLID-STATE IMAGE SENSOR 有权
标题翻译：一种固态图像传感器的制造方法
公开(公告)号：US20100203667A1
公开(公告)日：2010-08-12
申请号：US12697420
申请日：2010-02-01
申请人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
发明人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L31/18 , H01L21/265
CPC分类号： H01L27/14689 , H01L21/26513 , H01L21/324 , H01L27/14621 , H01L27/14643 , H01L27/14698
摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.
摘要翻译：一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。

66. 发明授权

US06501062B2 Image reading device and radiation image pick-up apparatus 失效
标题翻译：图像读取装置和放射线摄像装置
公开(公告)号：US06501062B2
公开(公告)日：2002-12-31
申请号：US09334651
申请日：1999-06-17
申请人： Kazuaki Tashiro
发明人： Kazuaki Tashiro
IPC分类号： H01L2700
CPC分类号： H01L27/14625 , H01L27/14676
摘要： The image reading device of the present invention comprises a sensor substrate having at least a plurality of photosensors for photoelectric conversion of the light entered in the sensor substrate, wherein the sensor substrate is composed of a material capable of absorbing the light entered in the sensor substrate, thereby preventing formation of stray light which is caused by the reflection of the light entered in the sensor substrate at the surface of the sensor substrate or the back surface of a base member.
摘要翻译：本发明的图像读取装置包括：传感器基板，具有至少多个用于对传感器基板进入的光进行光电转换的光电传感器，其中，传感器基板由能够吸收进入传感器基板的光的材料构成从而防止由传感器基板的传感器基板的表面或基体的背面的入射光引起的杂散光的形成。

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