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61. 发明申请

US20100313443A1 SUBSTRATE PROXIMITY DRYING USING IN-SITU LOCAL HEATING OF SUBSTRATE 失效
标题翻译：使用现场本地加热基板的基板临时干燥
公开(公告)号：US20100313443A1
公开(公告)日：2010-12-16
申请号：US12860786
申请日：2010-08-20
申请人： Katrina Mikhaylichenko , Kenneth C. Dodge , Mikhail Korolik , Michael Ravkin , John M.de Larios , Fritz C. Redeker
发明人： Katrina Mikhaylichenko , Kenneth C. Dodge , Mikhail Korolik , Michael Ravkin , John M.de Larios , Fritz C. Redeker
IPC分类号： F26B3/34
CPC分类号： B08B3/04 , G03F7/30 , H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A method is provided for removing a residual fluid remaining at a point of contact between a substrate support member and a back surface of a substrate being prepared by a proximity head. According to the method, the proximity head is applied onto the back surface of the substrate and the substrate support member being held by a carrier. The substrate support member is heated after the substrate support member passes the proximity head. The heating of the substrate support member is discontinued once the residual fluid has substantially evaporated.
摘要翻译：提供了一种用于去除残留在衬底支撑构件和由邻近头准备的衬底的背面之间的接触点处的残余流体的方法。根据该方法，将接近头部施加到基板的背面，并且基板支撑构件被载体保持。在衬底支撑构件通过邻近头之后，加热衬底支撑构件。一旦残留的流体基本上蒸发，衬底支撑构件的加热就会停止。

62. 发明申请

US20070084483A1 METHOD AND APPARATUS FOR CLEANING A SEMICONDUCTOR SUBSTRATE 失效
标题翻译：用于清洁半导体衬底的方法和装置
公开(公告)号：US20070084483A1
公开(公告)日：2007-04-19
申请号：US11612352
申请日：2006-12-18
申请人： Erik Freer , John deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred Redeker
发明人： Erik Freer , John deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred Redeker
IPC分类号： B08B7/00 , B08B3/00
CPC分类号： H01L21/67092 , B08B3/00 , B08B7/00 , B08B7/02 , C11D9/02 , C11D11/0047 , C11D17/0017 , C23G1/18 , G03F7/423 , H01L21/02052 , H01L21/02057 , H01L21/02096 , H01L21/31133 , H01L21/67028 , H01L21/6708 , H01L21/67086 , Y10T137/4891
摘要： A method for cleaning a substrate is provided. The method initiates with applying an activation solution to a surface of the substrate. The activation solution and the surface of the substrate are contacted with a surface of a solid cleaning surface. The activation solution is absorbed into a portion of the solid cleaning element and then the substrate or the solid cleaning surface is moved relative to each other to clean the surface of the substrate. A method for cleaning the surface of the substrate with a solid cleaning element that experiences plastic deformation is also provided. Corresponding cleaning apparatuses are also provided.
摘要翻译：提供一种清洗基板的方法。该方法通过将激活溶液施加到基底的表面来启动。活化溶液和基材的表面与固体清洁表面的表面接触。活化溶液被吸收到固体清洁元件的一部分中，然后基底或固体清洁表面相对于彼此移动以清洁基底的表面。还提供了一种用经历塑性变形的固体清洁元件来清洁基板的表面的方法。还提供了相应的清洁装置。

63. 发明申请

US20070079848A1 Method and apparatus for removing contamination from substrate 失效
标题翻译：去除基材污染的方法和装置
公开(公告)号：US20070079848A1
公开(公告)日：2007-04-12
申请号：US11336215
申请日：2006-01-20
申请人： Erik Freer , John de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred Redeker , Clint Thomas , John Parks
发明人： Erik Freer , John de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred Redeker , Clint Thomas , John Parks
IPC分类号： C23G1/00 , B08B7/00 , B08B7/04 , B08B3/00 , B08B3/12
CPC分类号： H01L21/02057 , B05D3/10 , B08B7/02 , C11D1/04 , C11D3/042 , C11D3/044 , C11D3/18 , C11D3/2079 , C11D3/222 , C11D3/225 , C11D3/3765 , C11D9/00 , C11D9/02 , C11D9/267 , C11D11/0047 , C11D17/0004 , C11D17/0013 , C11D17/0017 , C11D17/003 , C11D17/041 , C23G1/00 , C23G1/18 , G03F7/42 , G03F7/423 , H01L21/02052 , H01L21/02096 , H01L21/31133 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086
摘要： A cleaning material is disposed over a substrate. The cleaning material includes solid components dispersed within a liquid medium. A force is applied to the solid components within the liquid medium to bring the solid components within proximity to contaminants present on the substrate. The force applied to the solid components can be exerted by an immiscible component within the liquid medium. When the solid components are brought within sufficient proximity to the contaminants, an interaction is established between the solid components and the contaminants. Then, the solid components are moved away from the substrate such that the contaminants having interacted with the solid components are removed from the substrate.
摘要翻译：清洁材料设置在基板上。清洁材料包括分散在液体介质中的固体组分。将力施加到液体介质中的固体组分以使固体组分接近存在于基底上的污染物。施加到固体组分的力可以通过液体介质中的不混溶组分施加。当固体组分被充分接近污染物时，在固体组分和污染物之间建立了相互作用。然后，将固体组分从衬底移开，使得与固体组分相互作用的污染物从衬底上除去。

64. 发明申请

US20070084485A1 METHOD AND APPARATUS FOR CLEANING A SEMICONDUCTOR SUBSTRATE 有权
标题翻译：用于清洁半导体衬底的方法和装置
公开(公告)号：US20070084485A1
公开(公告)日：2007-04-19
申请号：US11612371
申请日：2006-12-18
申请人： Erik Freer , John deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred Redeker
发明人： Erik Freer , John deLarios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred Redeker
IPC分类号： B08B3/00
CPC分类号： B08B7/00 , B08B3/00 , B08B7/02 , C11D9/02 , C11D11/0047 , C11D17/0017 , C23G1/18 , G03F7/423 , H01L21/02052 , H01L21/31133 , H01L21/67028 , H01L21/6708 , H01L21/67086
摘要： A method for cleaning a substrate is provided. The method initiates with disposing a fluid layer having solid components therein to a surface of the substrate. A shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate is then created. The shear force may result from a normal or tangential component of a force applied to a solid body in contact with the fluid layer in one embodiment. The surface of the substrate is rinsed to remove the fluid layer. A cleaning system and apparatus are also provided.
摘要翻译：提供一种清洗基板的方法。该方法通过将其中具有固体组分的流体层设置在基底的表面来启动。然后产生基本上平行于衬底的表面并朝向衬底的外边缘的剪切力。在一个实施例中，剪切力可以由施加到与流体层接触的固体的力的正常或切向分量产生。漂洗基材的表面以除去流体层。还提供清洁系统和装置。

65. 发明申请

US20060128590A1 Method for removing contamination from a substrate and for making a cleaning solution 有权
公开(公告)号：US20060128590A1
公开(公告)日：2006-06-15
申请号：US11346894
申请日：2006-02-03
申请人： Erik Freer , John de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred Redeker
发明人： Erik Freer , John de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred Redeker
IPC分类号： C23G1/00 , B08B5/04 , B08B3/00 , C11D17/00
CPC分类号： H01L21/02052 , B08B7/02 , C11D9/00 , C11D9/02 , C11D9/267 , C11D11/0047 , C11D17/0013 , C11D17/0017 , C23G1/18 , G03F7/42 , H01L21/02057 , H01L21/02096
摘要： A method is provided for removing contamination from a substrate. The method includes applying a cleaning solution having a dispersed phase, a continuous phase and particles dispersed within the continuous phase to a surface of the substrate. The method includes forcing one of the particles dispersed within the continuous phase proximate to one of the surface contaminants. The forcing is sufficient to overcome any repulsive forces between the particles and the surface contaminants so that the one of the particles and the one of the surface contaminants are engaged. The method also includes removing the engaged particle and surface contaminant from the surface of the substrate. A process to manufacture the cleaning material is also provided.

66. 发明授权

US08388762B2 Substrate cleaning technique employing multi-phase solution 失效
标题翻译：使用多相溶液的基板清洗技术
公开(公告)号：US08388762B2
公开(公告)日：2013-03-05
申请号：US11743283
申请日：2007-05-02
申请人： Erik M. Freer , John M. deLarios , Michael Ravkin , Mikhail Korolik , Fritz C. Redeker
发明人： Erik M. Freer , John M. deLarios , Michael Ravkin , Mikhail Korolik , Fritz C. Redeker
IPC分类号： B08B3/04
CPC分类号： H01L21/02057 , H01L21/02052 , H01L21/67034 , H01L21/67057 , H01L21/67751
摘要： A method and system for cleaning opposed surfaces of a semiconductor wafer having particulate matter thereon. The method includes generating relative movement between a fluid and the substrate. The relative movement is in a direction that is transverse to a normal to one of the opposed surfaces and creates two spaced-apart flows. Each of the flows is adjacent to one of the opposed surfaces that is different from the opposed surface that is adjacent to the remaining flow of the plurality of flows. The fluid has coupling elements entrained therein, and the relative movement is established to impart sufficient drag upon a subset of the coupling elements to create movement of the coupling elements of the subset within the fluid. In this manner, a quantity of the drag is imparted upon the particulate matter to cause the particulate matter to move with respect to the substrate.
摘要翻译：一种用于清洁其上具有颗粒物质的半导体晶片的相对表面的方法和系统。该方法包括产生流体和衬底之间的相对运动。相对运动在与相对表面之一的法线横向的方向上，并且产生两个间隔开的流动。每个流体与相对于与多个流动的剩余流动相邻的相对表面不同的一个相对表面相邻。流体具有夹带在其中的耦合元件，并且建立相对运动以在联接元件的子集上施加足够的阻力以产生该流体内该子集的耦合元件的运动。以这种方式，将一定量的阻力赋予颗粒物质以使颗粒物质相对于基底移动。

67. 发明申请

US20080271749A1 Substrate cleaning technique employing multi-phase solution 失效
标题翻译：使用多相溶液的基板清洗技术
公开(公告)号：US20080271749A1
公开(公告)日：2008-11-06
申请号：US11743283
申请日：2007-05-02
申请人： Erik M. Freer , John M. deLarios , Michael Ravkin , Mikhail Korolik , Fritz C. Redeker
发明人： Erik M. Freer , John M. deLarios , Michael Ravkin , Mikhail Korolik , Fritz C. Redeker
IPC分类号： C25F3/30 , B08B3/00 , B08B3/10
CPC分类号： H01L21/02057 , H01L21/02052 , H01L21/67034 , H01L21/67057 , H01L21/67751
摘要： A method and system for cleaning opposed surfaces of a semiconductor wafer having particulate matter thereon. The method includes generating relative movement between a fluid and the substrate. The relative movement is in a direction that is transverse to a normal to one of the opposed surfaces and creates two spaced-apart flows. Each of the flows is adjacent to one of the opposed surfaces that is different from the opposed surface that is adjacent to the remaining flow of the plurality of flows. The fluid has coupling elements entrained therein, and the relative movement is established to impart sufficient drag upon a subset of the coupling elements to create movement of the coupling elements of the subset within the fluid. In this manner, a quantity of the drag is imparted upon the particulate matter to cause the particulate matter to move with respect to the substrate.
摘要翻译：一种用于清洁其上具有颗粒物质的半导体晶片的相对表面的方法和系统。该方法包括产生流体和衬底之间的相对运动。相对运动在与相对表面之一的法线横向的方向上，并且产生两个间隔开的流动。每个流体与相对于与多个流动的剩余流动相邻的相对表面不同的一个相对表面相邻。流体具有夹带在其中的耦合元件，并且建立相对运动以在联接元件的子集上施加足够的阻力以产生该流体内该子集的耦合元件的运动。以这种方式，将一定量的阻力赋予颗粒物质以使颗粒物质相对于基底移动。

68. 发明授权

US07939139B2 Methods for atomic layer deposition (ALD) using a proximity meniscus 有权
标题翻译：使用邻近半月板的原子层沉积（ALD）方法
公开(公告)号：US07939139B2
公开(公告)日：2011-05-10
申请号：US12624369
申请日：2009-11-23
申请人： Mike Ravkin , Mikhail Korolik , Mark Wilcoxson
发明人： Mike Ravkin , Mikhail Korolik , Mark Wilcoxson
IPC分类号： B05D1/36 , B05D7/00 , B08B3/00
CPC分类号： C25D5/08 , B82Y40/00 , C25D5/22 , C25D7/12 , C25D17/001 , C25D17/02 , C25D21/10 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要： Provided are methods for processing a substrate using a proximity system defined by one or more meniscus windows on one or more proximity heads. One method includes applying a first fluid meniscus to a surface of the substrate to apply a chemical precursor to the surface of the substrate. The first fluid meniscus is applied to first proximity meniscus window. Then, applying a second fluid meniscus to the surface of the substrate to leave an atomic layer of the chemical precursor on the surface of the substrate, through a second proximity meniscus window. A third fluid meniscus is applied to the surface of the substrate to apply a chemical reactant configured to react with the atomic layer of the chemical precursor to generate a layer of a material, through a third proximity meniscus window. The first, second and third proximity meniscus windows are arranged to apply the first fluid meniscus, the second fluid meniscus and the third fluid meniscus one after the other to a same location of the surface of the substrate during movement of the substrate through the proximity system.
摘要翻译：提供了使用由一个或多个邻近头上的一个或多个弯液面窗口限定的接近系统来处理衬底的方法。一种方法包括将第一流体弯月面施加到衬底的表面以将化学前体施加到衬底的表面。第一流体弯液面被应用于第一接近弯月面窗口。然后，将第二流体弯月面施加到衬底的表面，以通过第二接近弯月面窗口在衬底的表面上留下化学前体的原子层。将第三流体弯液面施加到基底的表面，以施加配置成与化学前体的原子层反应以产生材料层的化学反应物，通过第三接近弯月面窗口。第一，第二和第三接近弯液面窗口被布置成在衬底通过邻近系统移动期间将第一流体弯月面，第二流体弯月面和第三流体弯月面一个接一个地施加到衬底的表面的相同位置。

69. 发明申请

US20050145267A1 Controls of ambient environment during wafer drying using proximity head 失效
标题翻译：使用接近头进行晶片干燥时的环境环境控制
公开(公告)号：US20050145267A1
公开(公告)日：2005-07-07
申请号：US10817398
申请日：2004-04-01
申请人： Mikhail Korolik , John de Larios , Mike Ravkin
发明人： Mikhail Korolik , John de Larios , Mike Ravkin
IPC分类号： H01L21/304 , B08B3/04 , H01L21/00 , B08B3/00
CPC分类号： H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A method for processing a substrate is provided which includes generating a fluid meniscus to process the substrate and applying the fluid meniscus to a surface of the substrate. The method further includes reducing evaporation of fluids from a surface in the substrate processing environment.
摘要翻译：提供了一种用于处理衬底的方法，其包括产生流体弯月面以处理衬底并将流体弯月面施加到衬底的表面。该方法还包括减少流体在基板处理环境中的表面的蒸发。

70. 发明申请

US20070000518A1 Method for removing material from semiconductor wafer and apparatus for performing the same 失效
标题翻译：从半导体晶片去除材料的方法及其执行方法
公开(公告)号：US20070000518A1
公开(公告)日：2007-01-04
申请号：US11174080
申请日：2005-06-30
申请人： Mikhail Korolik , Michael Ravkin , John deLarios , Fritz Redeker , John Boyd
发明人： Mikhail Korolik , Michael Ravkin , John deLarios , Fritz Redeker , John Boyd
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , G03F7/422 , H01L21/02063 , H01L21/02071 , H01L21/6704 , Y10S134/902
摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.
摘要翻译：压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。

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