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    • 64. 发明申请
    • SILICON-BASED, BROADBAND, WAVEGUIDE-INTEGRATED ELECTRO-OPTICAL SWITCH
    • 硅基,宽带,波长整合式电光开关
    • US20150234138A1
    • 2015-08-20
    • US14528392
    • 2014-10-30
    • Volker J. SorgerChenran YeKe Liu
    • Volker J. SorgerChenran YeKe Liu
    • G02B6/42
    • G02B6/3596G02B6/125G02F1/00G02F1/3133
    • An electro-optical switch or router includes a semiconductor oxide substrate and first, second, and third semiconductor waveguides disposed on the semiconductor oxide substrate. The third waveguide includes a transparent conducting oxide layer, an oxide layer, a metal layer, and first and second electrodes coupled to the third waveguide. The electrodes are configured to bias and unbiased the third waveguide to effect optical switching in the electro-optical switch. The oxide layer is disposed between the transparent conducting oxide layer and the metal layer. The switch may further include a semiconductor layer disposed under the transparent conducting oxide layer between the transparent conducting oxide layer and the semiconductor oxide substrate. The first electrode may be coupled to the transparent conducting oxide layer. and the second electrode may be coupled to the metal layer.
    • 电光开关或路由器包括半导体氧化物衬底和设置在半导体氧化物衬底上的第一,第二和第三半导体波导。 第三波导包括透明导电氧化物层,氧化物层,金属层以及耦合到第三波导的第一和第二电极。 电极被配置为偏置和不偏置第三波导以实现电光开关中的光开关。 氧化物层设置在透明导电氧化物层和金属层之间。 开关还可以包括在透明导电氧化物层和半导体氧化物衬底之间的透明导电氧化物层下方的半导体层。 第一电极可以耦合到透明导电氧化物层。 并且第二电极可以耦合到金属层。