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61. 发明授权

US08709921B2 Method for forming a semiconductor device using selective epitaxy of group III-nitride 有权
标题翻译：使用III族氮化物的选择性外延形成半导体器件的方法
公开(公告)号：US08709921B2
公开(公告)日：2014-04-29
申请号：US13286097
申请日：2011-10-31
申请人： Jie Su
发明人： Jie Su
IPC分类号： H01L21/36
CPC分类号： H01L21/0237 , C30B25/18 , C30B29/403 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007
摘要： A method for forming a single crystalline Group-III Nitride film. A substrate is provided, having a first passivation layer, a monocrystalline layer, and a second passivation layer. The substrate is patterned to form a plurality of features with elongated sidewalls having a second crystal orientation. Group-III Nitride films are formed on the elongated sidewalls, but not on the first or second passivation layers. In one embodiment, the dimensions of the patterned features and the film deposition process result in a single crystalline Group-III Nitride film having a third crystal orientation normal to the substrate surface. In another embodiment, the dimensions and orientation of the patterned features and the film deposition process result in a plurality of single crystalline Group-III Nitride films. In other embodiments, additional layers are formed on the Group-III Nitride film or films to form semiconductor devices, for example, a light-emitting diode.
摘要翻译：形成单晶III族氮化物膜的方法。提供了具有第一钝化层，单晶层和第二钝化层的衬底。将衬底图案化以形成具有第二晶体取向的细长侧壁的多个特征。 III族氮化物膜形成在细长侧壁上，但不形成在第一或第二钝化层上。在一个实施例中，图案化特征的尺寸和膜沉积工艺导致具有垂直于衬底表面的第三晶体取向的单晶III族氮化物膜。在另一个实施方案中，图案化特征的尺寸和取向以及成膜方法产生多个单晶III族氮化物膜。在其它实施例中，在III-III族氮化物膜上形成附加层以形成半导体器件，例如发光二极管。

62. 发明授权

US08642368B2 Enhancement of LED light extraction with in-situ surface roughening 有权
标题翻译：增强了LED光提取与原位表面粗糙化
公开(公告)号：US08642368B2
公开(公告)日：2014-02-04
申请号：US13045387
申请日：2011-03-10
申请人： Jie Su
发明人： Jie Su
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , C23C16/0227 , C23C16/0272 , C23C16/301 , C23C16/54 , C23C16/56 , C30B25/02 , C30B29/406 , H01L33/007
摘要： The embodiments of the present invention generally relates to methods for enhancing the light extraction by surface roughening of the bottom n-GaN layer and/or top p-GaN layer so that the internal light from the active region is scattered outwardly to result in a higher external quantum efficiency. In one embodiment, a surface roughening process is performed on the n-GaN layer to form etching pits in a top surface of the n-GaN layer. Once the etching pits are formed, growth of the n-GaN material may be resumed on the roughened n-GaN layer to partially fill the etching pits, thereby forming air voids at the interface of the n-GaN layer and the subsequent, re-growth n-GaN layer. These air voids provide one or more localized regions with indices of reflection different from that of the n-GaN layer, such that the internal light generated by the active layers (e.g., the InGaN MQW layer), when passing through the n-GaN layer, is scattered by voids or bubbles. The surface roughening process may be further performed on a top surface of a p-GaN layer to scatter the light emitted from the active layers outwardly rather than being reflected back to the active layers.
摘要翻译：本发明的实施方案通常涉及通过底部n-GaN层和/或顶部p-GaN层的表面粗糙化来增强光提取的方法，使得来自有源区的内部光向外散射以产生更高的外部量子效率。在一个实施例中，在n-GaN层上进行表面粗糙化处理，以在n-GaN层的顶表面中形成蚀刻坑。一旦形成了蚀刻凹坑，就可以在粗糙化的n-GaN层上恢复n-GaN材料的生长，以部分地填充蚀刻凹坑，从而在n-GaN层的界面处形成空隙，生长n-GaN层。这些空气空隙提供一个或多个具有与n-GaN层不同的反射指数的局部区域，使得由有源层（例如，InGaN MQW层）产生的内部光当通过n-GaN层，被空隙或气泡分散。可以在p-GaN层的顶表面上进一步进行表面粗糙化处理，以使从有源层发射的光向外散射，而不是被反射回有源层。

63. 发明授权

US08489537B2 Segmenting sequential data with a finite state machine 有权
标题翻译：用有限状态机分段顺序数据
公开(公告)号：US08489537B2
公开(公告)日：2013-07-16
申请号：US12359344
申请日：2009-01-26
申请人： Jie Su , Min Chu , Wenli Zhu , Jian Wang
发明人： Jie Su , Min Chu , Wenli Zhu , Jian Wang
IPC分类号： G06F17/00 , G06N5/02
CPC分类号： G06N5/02
摘要： Described is a technology in which a finite state machine-based method segments original sequential data into high level units. Segments with similar sub-sequences are treated as the same unit. In general, the finite state machine indentifies sub-sequences in the sequential data that have similar tree-like microstructures. One described finite state machine operates by entering a path state when an input is a path command corresponding to a non-leaf node; the state machine remains in the path state until another command comprises an action command corresponding to a leaf node, whereby it outputs an action unit, or until the other command comprises a path command that is not the parent or the sibling of a next command, whereby a browsing unit is output. Also described is aggregating sub-sequences of a same unit to produce an access structure corresponding to the unit.
摘要翻译：描述了一种技术，其中基于有限状态机的方法将原始顺序数据分段成高级单元。具有相似子序列的段被视为相同的单元。一般来说，有限状态机识别具有类似树状微结构的序列数据中的子序列。一个描述的有限状态机通过在输入是对应于非叶节点的路径命令时输入路径状态来操作; 状态机保持在路径状态，直到另一个命令包括与叶节点相对应的动作命令，由此其输出动作单元，或者直到另一个命令包括不是父节点的路径命令或下一个命令的兄弟节点，由此输出浏览单元。还描述了聚合相同单元的子序列以产生对应于该单元的访问结构。

64. 发明申请

US20130148109A1 METHOD AND SYSTEM FOR DETECTING FIBER FAULT IN PASSIVE OPTICAL NETWORK 有权
标题翻译：用于检测被动光网络中光纤故障的方法和系统
公开(公告)号：US20130148109A1
公开(公告)日：2013-06-13
申请号：US13818937
申请日：2011-06-27
申请人： Jinsong Bei , Jidong Xu , Jie Su , Jianxin Lu
发明人： Jinsong Bei , Jidong Xu , Jie Su , Jianxin Lu
IPC分类号： G01N21/958
CPC分类号： G01N21/958 , G01M11/3109 , G01M11/3136 , H04B10/071 , H04B10/272 , H04J14/0282 , H04J14/0295
摘要： The disclosure provides a method and a system for detecting a fiber fault in a Passive Optical Network (PON). The system comprises an optical path detection device, a Wavelength Division Multiplexing (WDM) coupler, a wavelength selection coupler, a branch fiber selector and a wavelength selection router. The detection system is attached to an original PON system, without influencing the operation of the original system while performing the detection. With the disclosure, the problem of being unable to determine whether there is a fault in a branch fiber due to the loss of an optical path detection reflection signal is solved, the branch fiber with a fault can be quickly located and fixed, thus the operational and maintenance costs of an operator are reduced.
摘要翻译：本公开提供了一种用于检测无源光网络（PON）中的光纤故障的方法和系统。该系统包括光路检测装置，波分复用（WDM）耦合器，波长选择耦合器，分支光纤选择器和波长选择路由器。检测系统连接到原始PON系统，而不影响原始系统的操作，同时执行检测。通过公开，解决了由于光路检测反射信号的损失而无法确定分支光纤是否存在故障的问题，具有故障的分支光纤可以快速定位和固定，因此可操作并减少操作员的维护成本。

65. 发明申请

US20120315741A1 ENHANCED MAGNESIUM INCORPORATION INTO GALLIUM NITRIDE FILMS THROUGH HIGH PRESSURE OR ALD-TYPE PROCESSING 审中-公开
标题翻译：通过高压或ALD型加工将增强的镁合金纳入氮化铝膜
公开(公告)号：US20120315741A1
公开(公告)日：2012-12-13
申请号：US13485671
申请日：2012-05-31
申请人： Jie Su , Jiang Lu , Hua Chung , Wei-Yung Hsu , David Bour
发明人： Jie Su , Jiang Lu , Hua Chung , Wei-Yung Hsu , David Bour
IPC分类号： H01L21/20
CPC分类号： H01L21/02579 , H01L21/0237 , H01L21/0254 , H01L21/0262
摘要： Enhanced magnesium incorporation into gallium nitride films through high pressure or ALD-type processing is described. In an example, a method of fabricating a group III-nitride film includes flowing a group III precursor, a nitrogen precursor, and a p-type dopant precursor into a reaction chamber having a substrate therein. A p-type doped group III-nitride layer is formed in the reaction chamber, above the substrate, while a total pressure in the reaction chamber is approximately in the range of 300-760 Torr.
摘要翻译：描述了通过高压或ALD型处理将镁掺入到氮化镓膜中。在一个实例中，制造III族氮化物膜的方法包括使III族前体，氮前体和p型掺杂剂前体流入具有衬底的反应室中。在反应室中形成p型掺杂III族氮化物层，同时反应室中的总压力大约在300-760乇的范围内。

66. 发明授权

US08318522B2 Surface passivation techniques for chamber-split processing 失效
标题翻译：腔分离处理的表面钝化技术
公开(公告)号：US08318522B2
公开(公告)日：2012-11-27
申请号：US12966636
申请日：2010-12-13
申请人： Jie Su
发明人： Jie Su
IPC分类号： H01L21/20
CPC分类号： H01L21/0254 , C23C16/18 , C23C16/20 , C23C16/56 , H01L21/0242 , H01L21/02458 , H01L21/02656 , H01L33/007
摘要： Surface passivation techniques for chamber-split processing are described. A method includes forming a first Group III-V material layer above a substrate, the first Group III-V material layer having a top surface. A passivation layer is deposited on the top surface of the Group III-V material layer. The passivation layer is removed. Subsequently, a second Group III-V material layer is formed above the first Group III-V material layer.
摘要翻译：描述了室分离处理的表面钝化技术。一种方法包括在衬底上形成第一III-V族材料层，第一III-V族材料层具有顶表面。钝化层沉积在III-V族材料层的顶表面上。去除钝化层。随后，在第一III-V族材料层的上方形成第二III-V族材料层。

67. 发明授权

US08183132B2 Methods for fabricating group III nitride structures with a cluster tool 有权
标题翻译：使用簇工具制备III族氮化物结构的方法
公开(公告)号：US08183132B2
公开(公告)日：2012-05-22
申请号：US12751692
申请日：2010-03-31
申请人： Sandeep Nijhawan , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： Sandeep Nijhawan , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，其包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的氮和氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层第二层通过MOCVD过程。

68. 发明授权

US08099067B2 Data signal system 有权
标题翻译：数据信号系统
公开(公告)号：US08099067B2
公开(公告)日：2012-01-17
申请号：US11195908
申请日：2005-08-03
申请人： Jie Su
发明人： Jie Su
IPC分类号： H04B1/18 , H04B7/00
CPC分类号： H04H40/18 , H04H20/34 , H04H2201/13
摘要： A demodulation system for Radio Data System (RDS) signals in a receiver includes a quadrature mixer (303) configured to convert a RDS signal at an input frequency directly to a base band RDS signal, a single filter (305) configured to filter the base band RDS signal to provide a RDS signal, and a signal level detector (311) configured to provide an indication of a level of the RDS signal (313), a demodulator (315) configured to demodulate the RDS signal and provide RDS data, the RDS data corresponding to information for user consumption, where the indication is used for selectively interrupting the user consumption when the level of the RDS signal is unsatisfactory. Other aspects of the RDS and corresponding methods include interference mitigation and include a blanker (323) configured to remove impulse noise from a RDS signal to provide the RDS signal without impulse noise and a demodulator (315) coupled to the blanker and configured to demodulate the RDS signal to provide data corresponding to information for user consumption.
摘要翻译：用于接收机中的无线电数据系统（RDS）信号的解调系统包括正交混频器（303），被配置为将输入频率的RDS信号直接转换为基带RDS信号;单个滤波器（305）频带RDS信号以提供RDS信号;以及信号电平检测器（311），被配置为提供RDS信号（313）的电平的指示;解调器（315），被配置为解调RDS信号并提供RDS数据， RDS数据对应于用户消费的信息，其中当RDS信号的电平不令人满意时，该指示用于选择性地中断用户消费。 RDS和相应方法的其他方面包括干扰减轻，并且包括配置成从RDS信号去除脉冲噪声以提供没有脉冲噪声的RDS信号的消隐器（323）和耦合到消隐器的解调器（315），并且被配置为解调 RDS信号提供对应于用户消费的信息的数据。

69. 发明申请

US20110244617A1 FORMING A COMPOUND-NITRIDE STRUCTURE THAT INCLUDES A NUCLEATION LAYER 审中-公开
标题翻译：形成包含核层的复合硝酸盐结构
公开(公告)号：US20110244617A1
公开(公告)日：2011-10-06
申请号：US13052861
申请日：2011-03-21
申请人： Jie Su
发明人： Jie Su
IPC分类号： H01L33/02
CPC分类号： H01L33/007 , C23C16/301 , C23C16/303 , C23C16/54 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262
摘要： The present invention generally provides apparatus and methods for forming LED structures. In one embodiment where a sapphire substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber while a separate processing chamber, such as a PVD, MOCVD, CVD, or ALD chamber, may be used to grow buffer layers on the sapphire substrate at lower growth rate. The buffer layer may be GaN, AlN, AlGaN, InGaN, or InAlGaN. In another embodiment where a silicon-based substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber in which an Al-free environment is provided while a separate processing chamber with a Ga-free environment is used to grow a Ga-free buffer layer, such as Al, AlN, or SiN, on the silicon-based substrate. The separate processing chamber may be a PVD, CVD, MOCVD, a plasma assisted MOCVD, or other vapor phase deposition techniques.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。在选择蓝宝石衬底的一个实施例中，本体III族氮化物的生长可以沉积在HVPE或MOCVD室中，同时可以使用诸如PVD，MOCVD，CVD或ALD室的单独的处理室来以较低的生长速率在蓝宝石衬底上生长缓冲层。缓冲层可以是GaN，AlN，AlGaN，InGaN或InAlGaN。在选择硅基衬底的另一个实施方案中，本体III族氮化物的生长可以沉积在其中提供无Al环境的HVPE或MOCVD室中，而具有无Ga的环境的单独的处理室是用于在硅基衬底上生长诸如Al，AlN或SiN之类的无Ga缓冲层。单独的处理室可以是PVD，CVD，MOCVD，等离子体辅助MOCVD或其它气相沉积技术。

70. 发明申请

US20110143471A1 SURFACE PASSIVATION TECHNIQUES FOR CHAMBER-SPLIT PROCESSING 失效
标题翻译：用于室分解处理的表面钝化技术
公开(公告)号：US20110143471A1
公开(公告)日：2011-06-16
申请号：US12966636
申请日：2010-12-13
申请人： Jie Su
发明人： Jie Su
IPC分类号： H01L21/20
CPC分类号： H01L21/0254 , C23C16/18 , C23C16/20 , C23C16/56 , H01L21/0242 , H01L21/02458 , H01L21/02656 , H01L33/007
摘要： Surface passivation techniques for chamber-split processing are described. A method includes forming a first Group III-V material layer above a substrate, the first Group III-V material layer having a top surface. A passivation layer is deposited on the top surface of the Group III-V material layer. The passivation layer is removed. Subsequently, a second Group III-V material layer is formed above the first Group III-V material layer.
摘要翻译：描述了室分离处理的表面钝化技术。一种方法包括在衬底上形成第一III-V族材料层，第一III-V族材料层具有顶表面。钝化层沉积在III-V族材料层的顶表面上。去除钝化层。随后，在第一III-V族材料层的上方形成第二III-V族材料层。

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