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    • 62. 发明专利
    • Method of forming anodic oxidation film
    • 形成阳极氧化膜的方法
    • JP2011195952A
    • 2011-10-06
    • JP2011001323
    • 2011-01-06
    • Kobe Steel Ltd株式会社神戸製鋼所
    • WADA KOJIHOSOKAWA MAMORUTSUBOTA TAKAYUKIHISAMOTO ATSUSHI
    • C25D11/04C25D11/14C25D11/18
    • C25D11/04C25D11/024C25D11/08C25D11/16C25D11/18C25D11/246C25D21/12
    • PROBLEM TO BE SOLVED: To provide a method of forming anodic oxidation film, capable of forming a thick anodic oxidation film in a short time with good productivity and, if necessary, also increasing the hardness of the film without using a specialized facility, on the assumption that a direct current power is used.SOLUTION: In the method of forming an anodic oxidation film by distributing a predetermined electric current Aonto an aluminum base material selected from aluminum and aluminum alloy, such a first power-distribution pausing process that, when reaching a predetermined voltage V1 during film formation, power distribution is once paused, the power-distribution pausing is continued for a predetermined time T1 or more, thereafter, the power distribution is reopened is repeated a plurality of times, wherein the predetermined voltage V1 and the electricity pausing time T1 satisfy a prescribed relation.
    • 要解决的问题:提供一种形成阳极氧化膜的方法,其能够在短时间内以良好的生产率形成厚阳极氧化膜,并且如果需要也可以在不使用专门设备的情况下增加膜的硬度,在 假定使用直流电力。解决方案:在通过分配预定电流来形成阳极氧化膜的方法中选择铝和铝合金的铝基材料,这样的第一配电暂停处理,当达到 在成膜期间的预定电压V1,功率分配暂停一次,电力分配暂停持续预定时间T1或更长时间,然后重新开启功率分配重复多次,其中预定电压V1和 停电时间T1满足规定的关系。
    • 63. 发明专利
    • Method of manufacturing surface treated member for semiconductor liquid crystal manufacturing apparatus
    • 半导体液晶制造设备制造表面处理部件的方法
    • JP2010209457A
    • 2010-09-24
    • JP2009169100
    • 2009-07-17
    • Kobe Steel Ltd株式会社神戸製鋼所
    • WADA KOJITSUBOTA TAKAYUKIHOSOKAWA MAMORUHISAMOTO ATSUSHI
    • C25D11/18H01L21/3065
    • C25D11/24H01L29/4908
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a surface treated member used for semiconductor liquid crystal manufacturing apparatus, capable of forming an anodized film at a higher hardness than that of an anodizing film formed of an existent method, with no problem in view of the generation of cracks, and excellent in the balance between a high hardness and reduced cracks by a simple and convenient method. SOLUTION: The method of manufacturing the surface treated member used for semiconductor liquid crystal manufacturing apparatus is carried out by forming an anodized film to the surface of a member having an aluminum alloy or pure aluminum as a basic material, then dipping the same in pure water, and applying a hydrating treatment to the anodized film, wherein the hydrating treatment is conducted under conditions satisfying that a treatment temperature is 80°C to 100 °C. and a treatment time (min)≥-1.5×treatment temperature (°C)+270. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种制造用于半导体液晶制造装置的表面处理构件的方法,其能够形成比由现有方法形成的阳极氧化膜的硬度高的硬度的阳极氧化膜,而不是 考虑到裂纹的产生的问题,并且通过简单方便的方法在高硬度和减少的裂纹之间的平衡优异。 解决方案:制造用于半导体液晶制造装置的表面处理部件的方法通过在具有铝合金或纯铝作为基材的部件的表面上形成阳极氧化膜来进行,然后将其浸渍 在纯水中,对阳极氧化膜进行水合处理,其中,水合处理在满足处理温度为80℃〜100℃的条件下进行。 治疗时间(min)≥-1.5×治疗温度(℃)+270。 版权所有(C)2010,JPO&INPIT
    • 65. 发明专利
    • Method of forming anode oxide film and aluminum alloy member using the same
    • 使用其形成阳极氧化膜和铝合金构件的方法
    • JP2010077485A
    • 2010-04-08
    • JP2008246381
    • 2008-09-25
    • Kobe Steel Ltd株式会社神戸製鋼所
    • WADA KOJIHISAMOTO ATSUSHI
    • C25D11/04C25D11/06
    • C25D11/06C25D11/024
    • PROBLEM TO BE SOLVED: To provide a method of forming an anode oxide film by which the occurrence of crack on the anode oxide film formed on the surface of an aluminum alloy base material such as a vacuum chamber inner wall of a plasma treating device is suppressed and the anode oxide film having low heat reflectance and high voltage resistance is formed with high efficiency. SOLUTION: The anode oxide film is formed by controlling integral voltage in total film thickness of the anode oxide film formed on the JIS 6061 aluminum alloy base material in sulfuric acid or a mixed acid solution of sulfuric acid with oxalic acid in the film thickness direction to ≥1,650 V*μm, forming the anode oxide film from a position 25 μm apart from the interface between the aluminum alloy base material and the anode oxide film up to the anode oxide film surface in the film thickness direction with ≤27 volt electrolytic voltage and controlling the electrolytic voltage so that the integral voltage from the interface up to a position of 25 μm in the film thickness direction becomes ≥820 V*μm and ≤1,000 V*μm. The high voltage resistance anode oxide film in which all of the heat reflectance, the crack density and the treating time satisfy a prescribed standard is formed. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种形成阳极氧化膜的方法,通过该方法,在形成在诸如等离子体处理的真空室内壁的铝合金基材的表面上的阳极氧化膜上发生裂纹 并且以高效率形成具有低热反射性和高耐电压性的阳极氧化膜。

      解决方案:阳极氧化膜是通过控制形成在JIS 6061铝合金基材上的阳极氧化膜的总膜中的积分电压在硫酸或硫酸与草酸的混合酸溶液中的膜中而形成的 厚度方向为≥1,650V*μm,从铝合金基材和阳极氧化膜之间的界面到膜阳极氧化膜表面的膜厚方向上的距离为25μm的位置形成阳极氧化膜,膜厚度方向为≤27伏 电解电压并控制电解电压,使得在膜厚方向上从界面到25μm位置的积分电压变为≥820V*μm和≤1000V*μm。 形成所有热反射率,裂纹密度和处理时间均达到规定标准的耐高压电池阳极氧化膜。 版权所有(C)2010,JPO&INPIT

    • 66. 发明专利
    • Surface treatment member for semiconductor-producing equipment, and method for production thereof
    • 半导体生产设备的表面处理部件及其生产方法
    • JP2009228132A
    • 2009-10-08
    • JP2009034660
    • 2009-02-17
    • Kobe Steel Ltd株式会社神戸製鋼所
    • TSUBOTA TAKAYUKIHISAMOTO ATSUSHIWADA KOJIHOSOKAWA MAMORU
    • C25D11/18H01L21/205H01L21/3065
    • C25D11/246
    • PROBLEM TO BE SOLVED: To provide a surface treatment member for semiconductor-producing equipment capable of preventing the change over time of electrical properties during use of the above equipment and also preventing increase of cracks, and to provide a method for production of the surface treatment member. SOLUTION: The surface treatment member 1 for semiconductor-producing equipment includes: a substrate 2 comprising aluminum or aluminum alloy; an anodized film 3 formed on the surface of the substrate 2 and subjected to a hydration treatment; and a fluorine-enriched layer 4 formed on the surface of the anodized film 3. The fluorine concentration in the layer 4 is ≥1 mass%. The method for production of the surface treatment member 1 includes: a step of forming the anodized film 3 on the surface of the substrate 2 comprising aluminum or aluminum alloy; a step of subjecting the hydration treatment to the anodized film 3; and forming, on the film 3, the fluorine-enriched layer 4 in which the fluorine concentration is enriched to 1 mass% or more. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种用于半导体制造设备的表面处理构件,其能够防止在使用上述设备期间电​​性能的变化,并且还防止裂纹的增加,并且提供一种生产 表面处理构件。 解决方案:用于半导体制造设备的表面处理构件1包括:基底2,其包括铝或铝合金; 阳极氧化膜3,其形成在基板2的表面上并进行水合处理; 以及形成在阳极氧化膜3的表面上的富氟层4.层4中的氟浓度为≥1质量%。 表面处理构件1的制造方法包括:在包含铝或铝合金的基板2的表面上形成阳极氧化膜3的步骤; 将水合处理处理到阳极氧化膜3的步骤; 并且在膜3上形成氟浓度为1质量%以上的富氟层4。 版权所有(C)2010,JPO&INPIT
    • 67. 发明专利
    • Member for plasma treatment device and its manufacturing method
    • 等离子体处理装置的成员及其制造方法
    • JP2008303442A
    • 2008-12-18
    • JP2007153269
    • 2007-06-08
    • Kobe Steel Ltd株式会社神戸製鋼所
    • TANAKA TOSHIYUKIHISAMOTO ATSUSHISUGANO HIROTO
    • C23C16/44C25D11/04C25D11/18H01L21/205H01L21/683H05H1/46
    • PROBLEM TO BE SOLVED: To provide a member for plasma treatment device, which is excellent in anti-sticking property, has a suitable and stable shape for a lower electrode of a CVD device, and can restrain abnormal discharge during plasma treatment. SOLUTION: This member 1 for plasma treatment device includes a substrate 2 which is made of an aluminum alloy and whose surface is finished in flat and smooth by mechanical work, and an anode oxide film 3 which is formed on the substrate 2 and has minute cracks formed by hydration treatment. The anode oxide film 3 has a leak current density of over 0.9×10 -5 A/cm 2 at an applied voltage of 100 V, and has a film thickness of not less than 3 μm, an arithmetic average surface roughness of less than 1 μm, and a dissolving rate of less than 100 mg/dm 2 /15 min in the phosphoric acid/chromic acid immersion test. The surface flatness of the surface of the anode oxide film 3 is not larger than 50 μm. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:为了提供抗粘附性优异的等离子体处理装置的构件,对于CVD装置的下电极具有合适且稳定的形状,并且可以抑制等离子体处理期间的异常放电。 解决方案:用于等离子体处理装置的构件1包括由铝合金制成的表面通过机械加工而平坦平滑的基板2和形成在基板2上的阳极氧化膜3和 通过水合处理形成微小裂纹。 在100V的施加电压下,阳极氧化膜3的漏电流密度为0.9×10 -5 A / cm 2 ,膜厚不为 在磷酸/铬酸浸渍试验中小于3μm,算术平均表面粗糙度小于1μm,溶解速度小于100mg / dm 2 / SP> / 15min。 阳极氧化膜3的表面的表面平坦度不大于50μm。 版权所有(C)2009,JPO&INPIT
    • 70. 发明专利
    • MEMBER MADE OF Ti ALLOY HAVING EXCELLENT WEAR RESISTANCE
    • 具有优异耐磨性的钛合金会员
    • JP2006089841A
    • 2006-04-06
    • JP2004280457
    • 2004-09-27
    • Kobe Steel Ltd株式会社神戸製鋼所
    • YASUNAGA TATSUYAURUSHIBARA WATARUYASHIKI TAKASHIIDO HIDEKAZUHISAMOTO ATSUSHISATO TOSHIKI
    • C23C28/02C23C28/00
    • PROBLEM TO BE SOLVED: To provide a member made of a titanium alloy exhibiting more excellent wear resistance which is not yet obtained in the conventional member made of a titanium alloy in which attention is payed to the improvement of wear resistance owing to the application of a surface treatment layer.
      SOLUTION: Between an Ni-based plating layer, e.g., an Ni-P plating layer and a titanium alloy base material, an Al intermediate layer having excellent adhesion to both, and having an Al composition of ≥90% and a thickness in the range of 0.2 to 50 μm is interposed, so as to form a member made of a titanium alloy having excellent wear resistance. Further, an anode oxidation treatment layer of Al or a Zn layer formed by zincate treatment is interposed between the Ni-based plating layer and the Al intermediate layer, thus the Ni-based plating part permeates into the anode oxidation treatment layer or Zn layer in which fine pores are largely present, and, by the anchor effect, the adhesive strength of the Ni-based plating layer to the base material made of a Ti alloy further improves.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了提供一种钛合金制成的构件,其表现出更优异的耐磨性,在由钛合金制成的常规构件中尚未获得,其中注意到提高耐磨性由于 应用表面处理层。 解决方案:在镍基镀层,例如Ni-P镀层和钛合金基材之间,具有优异的粘附性,Al组分≥90%的铝中间层和厚度 介于0.2〜50μm的范围内,形成耐磨性优异的钛合金构件。 此外,在Ni系镀层和Al中间层之间插入由铝酸盐处理形成的Al或Zn层的阳极氧化处理层,Ni基电镀部分渗入阳极氧化处理层或Zn层 主要存在细孔,并且通过锚固效应,Ni基镀层对由Ti合金制成的基材的粘合强度进一步提高。 版权所有(C)2006,JPO&NCIPI