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61. 发明申请

US20100308512A1 NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY 有权
标题翻译： NANOIMPRINT RESIST，NANOIMPRINT MOLD和NANOIMPRINT LITHOGRAPHY
公开(公告)号：US20100308512A1
公开(公告)日：2010-12-09
申请号：US12712178
申请日：2010-02-24
申请人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
发明人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
IPC分类号： B29C43/52 , B29C33/42
CPC分类号： B29C59/026 , B82Y10/00 , B82Y40/00 , C08G59/245 , C08L63/00 , G03F7/0002 , Y10T428/31544 , Y10T428/31855
摘要： A nanoimprint mold includes a flexible body and a molding layer formed on the flexible body. The molding layer includes a plurality of protrusions and recesses. The molding layer is a polymer material polymerized via a cross linking polymerization of a nanoimprint resist which includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), a diluent solvent and a photo initiator. A method for making the nanoimprint mold is also provided.
摘要翻译：纳米压印模具包括柔性体和形成在柔性体上的模制层。成型层包括多个突起和凹部。成型层是通过包含超支化聚氨酯低聚物（HP），全氟聚醚（PFPE），甲基丙烯酸甲酯（MMA），稀释剂溶剂和光引发剂的纳米压印抗蚀剂的交联聚合而聚合的聚合物材料。还提供了制造纳米压印模具的方法。

62. 发明申请

US20130105438A1 MANUFACTURING METHOD OF GRATING 有权
标题翻译：制造方法
公开(公告)号：US20130105438A1
公开(公告)日：2013-05-02
申请号：US13658029
申请日：2012-10-23
申请人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
发明人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
IPC分类号： B44C1/22 , H05H1/24
CPC分类号： G02B5/1857 , B82Y10/00 , B82Y40/00 , G02B5/18 , G02B5/1809 , G03F7/0002 , G03F7/095 , G03F7/70691 , H01L33/508
摘要： The disclosure relates to a method for making a grating. The method includes the following steps. First, a substrate is provided. Second, a photoresist film is formed on a surface of the substrate. Third, a nano-pattern is formed on the photoresist film by nano-imprint lithography. Fourth, the photoresist film is etched to form a patterned photoresist layer. Fifth, a mask layer is covered on the patterned photoresist layer and the surface of the substrate exposed to the patterned photoresist layer. Sixth, the patterned photoresist layer and the mask layer thereon are removed to form a patterned mask layer. Seventh, the substrate is etched through the patterned mask layer by reactive ion etching, wherein etching gases includes carbon tetrafluoride (CF4), sulfur hexafluoride (SF6) and argon (Ar2). Finally, the patterned mask layer is removed.
摘要翻译：本公开涉及一种制造光栅的方法。该方法包括以下步骤。首先，提供基板。其次，在基板的表面上形成光致抗蚀剂膜。第三，通过纳米压印光刻在光致抗蚀剂膜上形成纳米图案。第四，蚀刻光致抗蚀剂膜以形成图案化的光致抗蚀剂层。第五，在图案化的光致抗蚀剂层和暴露于图案化光致抗蚀剂层的基板的表面上覆盖掩模层。第六，图案化的光致抗蚀剂层和其上的掩模层被去除以形成图案化掩模层。第七，通过反应离子蚀刻蚀刻通过图案化掩模层的衬底，其中蚀刻气体包括四氟化碳（CF 4），六氟化硫（SF 6）和氩（Ar 2）。最后，去除图案化的掩模层。

63. 发明申请

US20120170032A1 CARRIER FOR SINGLE MOLECULE DETECTION 审中-公开
标题翻译：单分子检测载体
公开(公告)号：US20120170032A1
公开(公告)日：2012-07-05
申请号：US13091125
申请日：2011-04-21
申请人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
发明人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
IPC分类号： G01J3/44 , B82Y30/00
CPC分类号： G01N21/658 , B82Y15/00 , B82Y30/00
摘要： A carrier for single molecule detection includes a substrate and a metal layer. The substrate has a surface and includes a number of three-dimensional nano-structures at the surface. The metal layer is located on the surface of the substrate and covers the three-dimensional nano-structures. The enhancement factor of SERS of the carrier is relatively high.
摘要翻译：用于单分子检测的载体包括基底和金属层。衬底具有表面并且在表面包括许多三维纳米结构。金属层位于基板的表面上并覆盖三维纳米结构。载波SERS的增强因子相对较高。

64. 发明申请

US20120232182A1 NANOIMPRINT RESIST 有权
公开(公告)号：US20120232182A1
公开(公告)日：2012-09-13
申请号：US13479484
申请日：2012-05-24
申请人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
发明人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
IPC分类号： C08L67/00
CPC分类号： B29C59/026 , B82Y10/00 , B82Y40/00 , C08G59/245 , C08L63/00 , G03F7/0002 , Y10T428/31544 , Y10T428/31855
摘要： A nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether, a methylmethacrylate, a diluent solvent, and a photo initiator. The hyperbranched polyurethane oligomer can be polymerized by a copolymerization of trimellitic anhydride, ethylene mercaptan, and epoxy acrylic acid. The hyperbranched polyurethane oligomer can also be polymerized by a ring-opening copolymerization epoxy acrylic acid and ethylene glycol.
摘要翻译：纳米压印抗蚀剂包括超支化聚氨酯低聚物，全氟聚醚，甲基丙烯酸甲酯，稀释剂溶剂和光引发剂。超支化聚氨酯低聚物可以通过偏苯三酸酐，乙烯硫醇和环氧丙烯酸的共聚来聚合。超支化聚氨酯低聚物也可以通过开环共聚环氧丙烯酸和乙二醇聚合。

65. 发明申请

US20110003442A1 METHOD FOR MANUFACTURING FLEXIBLE SEMICONDUCTOR DEVICE 有权
标题翻译：制造柔性半导体器件的方法
公开(公告)号：US20110003442A1
公开(公告)日：2011-01-06
申请号：US12781036
申请日：2010-05-17
申请人： XUE-SHEN WANG , QUN-QING LI
发明人： XUE-SHEN WANG , QUN-QING LI
IPC分类号： H01L21/336 , H01L21/18
CPC分类号： H01L27/1266 , H01L21/6835 , H01L27/1214 , H01L27/1218 , H01L29/78603 , H01L33/0066 , H01L33/007 , H01L33/0079 , H01L33/02 , H01L2221/6835 , H01L2924/30107
摘要： A method for making a flexible semiconductor device includes the following steps. A rigid substrate is provided. A flexible substrate is provided, and placed on the rigid substrate. A semiconductor device is directly formed on the flexible substrate using a semiconductor process. After the rigid substrate is removed, the flexible semiconductor device is formed.
摘要翻译：制造柔性半导体器件的方法包括以下步骤。提供刚性基板。提供柔性基板，并且放置在刚性基板上。使用半导体工艺在柔性基板上直接形成半导体器件。在去除刚性基板之后，形成柔性半导体器件。

66. 发明申请

US20100308009A1 NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY 有权
标题翻译： NANOIMPRINT RESIST，NANOIMPRINT MOLD和NANOIMPRINT LITHOGRAPHY
公开(公告)号：US20100308009A1
公开(公告)日：2010-12-09
申请号：US12717953
申请日：2010-03-05
申请人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
发明人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
IPC分类号： C23F1/00 , B29C59/00 , C08J3/28 , B29C35/08
CPC分类号： B29C59/026 , B82Y10/00 , B82Y40/00 , C08G59/245 , C08L63/00 , G03F7/0002 , Y10T428/31544 , Y10T428/31855
摘要： A nanoimprint resist that includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), a diluent solvent and a photo initiator. A method of a nanoimprint lithography is also provided.
摘要翻译：包括超支化聚氨酯低聚物（HP），全氟聚醚（PFPE），甲基丙烯酸甲酯（MMA），稀释剂溶剂和光引发剂的纳米压印抗蚀剂。还提供了纳米压印光刻的方法。

67. 发明申请

US20100308008A1 NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY 有权
标题翻译： NANOIMPRINT RESIST，NANOIMPRINT MOLD和NANOIMPRINT LITHOGRAPHY
公开(公告)号：US20100308008A1
公开(公告)日：2010-12-09
申请号：US12717952
申请日：2010-03-05
申请人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
发明人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
IPC分类号： C23F1/00 , B29C59/00 , C08L63/00 , C08L75/04
CPC分类号： B29C59/026 , B82Y10/00 , B82Y40/00 , C08G59/245 , C08L63/00 , G03F7/0002 , Y10T428/31544 , Y10T428/31855
摘要： A nanoimprint resist includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), and a diluent solvent. A method of a nanoimprint lithography is also provided.
摘要翻译：纳米压印抗蚀剂包括超支化聚氨酯低聚物（HP），全氟聚醚（PFPE），甲基丙烯酸甲酯（MMA）和稀释剂溶剂。还提供了纳米压印光刻的方法。

68. 发明申请

US20130087528A1 NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY 有权
标题翻译： NANOIMPRINT RESIST，NANOIMPRINT MOLD和NANOIMPRINT LITHOGRAPHY
公开(公告)号：US20130087528A1
公开(公告)日：2013-04-11
申请号：US13687364
申请日：2012-11-28
申请人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
发明人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
IPC分类号： B29C59/02
CPC分类号： B29C59/026 , B82Y10/00 , B82Y40/00 , C08G59/245 , C08L63/00 , G03F7/0002 , Y10T428/31544 , Y10T428/31855
摘要： A nanoimprint lithography method includes the following steps. First, a first sacrifice layer, a second sacrifice layer and a nanoimprint resist are formed on a substrate. The nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether; a methylmethacrylate, and a diluent solvent. Second, a master stamp with a first nanopattern formed by a number of projecting portions and gaps is provided, and the first nanopattern is pressed into the nanoimprint resist to form a second nanopattern in the nanoimprint resist. Third, the second nanopattern is transferred to the substrate.
摘要翻译：纳米压印光刻方法包括以下步骤。首先，在基板上形成第一牺牲层，第二牺牲层和纳米压印抗蚀剂。纳米压印抗蚀剂包括超支化聚氨酯低聚物，全氟聚醚; 甲基丙烯酸甲酯和稀释剂溶剂。其次，提供由多个突出部分和间隙形成的具有第一纳米图案的主印模，并且将第一纳米图案压入纳米压印抗蚀剂中以在纳米压印抗蚀剂中形成第二纳米图案。第三，将第二纳米图案转移到基底。

69. 发明申请

US20120244245A1 NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY 有权
标题翻译： NANOIMPRINT RESIST，NANOIMPRINT MOLD和NANOIMPRINT LITHOGRAPHY
公开(公告)号：US20120244245A1
公开(公告)日：2012-09-27
申请号：US13459346
申请日：2012-04-30
申请人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
发明人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
IPC分类号： B29C59/02
CPC分类号： B29C59/026 , B82Y10/00 , B82Y40/00 , C08G59/245 , C08L63/00 , G03F7/0002 , Y10T428/31544 , Y10T428/31855
摘要： A nanoimprint mold includes a flexible body and a molding layer formed on the flexible body. The molding layer includes a plurality of protrusions and recesses. The molding layer is a polymer material polymerized via a cross linking polymerization of a nanoimprint resist which includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), a diluent solvent and a photo initiator.
摘要翻译：纳米压印模具包括柔性体和形成在柔性体上的模制层。成型层包括多个突起和凹部。成型层是通过包含超支化聚氨酯低聚物（HP），全氟聚醚（PFPE），甲基丙烯酸甲酯（MMA），稀释剂溶剂和光引发剂的纳米压印抗蚀剂的交联聚合而聚合的聚合物材料。

70. 发明申请

US20120170033A1 METHOD FOR DETECTING SINGLE MOLECULE 有权
标题翻译：检测单分子的方法
公开(公告)号：US20120170033A1
公开(公告)日：2012-07-05
申请号：US13092144
申请日：2011-04-21
申请人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
发明人： ZHEN-DONG ZHU , QUN-QING LI , LI-HUI ZHANG , MO CHEN
IPC分类号： G01J3/44 , C23F1/00 , B82Y40/00
CPC分类号： G01N21/658 , Y02P20/582
摘要： A method for detecting single molecule includes providing a carrier. The carrier includes a substrate and a metal layer. The substrate has a surface and defines a number of blind holes caved in the substrate from the surface thereof. The metal layer covers the surface of the substrate and inner surfaces of the number of blind holes. Single molecule samples are disposed on the metal layer. The single molecule samples are detected by a Raman Spectroscopy system.
摘要翻译：检测单分子的方法包括提供载体。载体包括基底和金属层。衬底具有表面并且限定了从其表面在衬底中凹陷的多个盲孔。金属层覆盖基板的表面和盲孔数的内表面。单分子样品设置在金属层上。单分子样品通过拉曼光谱系统检测。

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