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61. 发明授权

US09281244B1 Hybrid wafer dicing approach using an adaptive optics-controlled laser scribing process and plasma etch process 有权
标题翻译：使用自适应光学控制激光划线工艺和等离子体蚀刻工艺的混合晶片切割方法
公开(公告)号：US09281244B1
公开(公告)日：2016-03-08
申请号：US14490598
申请日：2014-09-18
申请人： Jungrae Park , Wei-Sheng Lei , James S. Papanu , Brad Eaton , Ajay Kumar
发明人： Jungrae Park , Wei-Sheng Lei , James S. Papanu , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/02 , H01L21/78 , H01L21/308 , H01L21/3065 , H01L21/67 , H01J37/32 , B23K26/36
CPC分类号： H01L21/78 , B23K26/364 , H01J37/32889 , H01J2237/335 , H01L21/3065 , H01L21/3086 , H01L21/67207
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with an adaptive optics-controlled laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。然后用自适应光学控制激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

62. 发明申请

US20160027697A1 HYBRID WAFER DICING APPROACH USING A RECTANGULAR SHAPED TWO-DIMENSIONAL TOP HAT LASER BEAM PROFILE OR A LINEAR SHAPED ONE-DIMENSIIONAL TOP HAT LASER BEAM PROFILE LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS 有权
标题翻译：使用矩形形状的二维顶部激光光束轮廓或线形形状的一维顶部激光激光束轮廓激光扫描过程和等离子体蚀刻过程的混合波形方法
公开(公告)号：US20160027697A1
公开(公告)日：2016-01-28
申请号：US14337810
申请日：2014-07-22
申请人： Wei-Sheng Lei , Prabhat Kumar , Jungrae Park , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Prabhat Kumar , Jungrae Park , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/822 , H01L21/033 , H01L21/67 , H01L21/02
CPC分类号： H01L21/822 , B23K26/0732 , B23K26/364 , B23K2103/56 , H01L21/02057 , H01L21/0337 , H01L21/3065 , H01L21/30655 , H01L21/3081 , H01L21/31105 , H01L21/32131 , H01L21/67069 , H01L21/67207 , H01L21/78
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a top hat laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。然后用顶帽激光束轮廓激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

63. 发明授权

US09209084B2 Maskless hybrid laser scribing and plasma etching wafer dicing process 有权
公开(公告)号：US09209084B2
公开(公告)日：2015-12-08
申请号：US14454656
申请日：2014-08-07
申请人： Wei-Sheng Lei , Brad Eaton , James S. Papanu , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , James S. Papanu , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/78 , H01L21/3065 , H01L21/82 , B23K26/00 , B23K26/06
CPC分类号： H01L21/78 , B23K26/0006 , B23K26/0624 , B23K26/50 , B23K26/53 , B23K26/57 , B23K2101/40 , B23K2103/56 , H01L21/3065 , H01L21/82
摘要： Maskless hybrid laser scribing and plasma etching wafer dicing processes are described. In an example, a method of dicing a semiconductor wafer having a front surface with a plurality of integrated circuits thereon and having a passivation layer disposed between and covering metal pillar/solder bump pairs of the integrated circuits involves laser scribing, without the use of a mask layer, the passivation layer to provide scribe lines exposing the semiconductor wafer. The method also involves plasma etching the semiconductor wafer through the scribe lines to singulate the integrated circuits, wherein the passivation layer protects the integrated circuits during at least a portion of the plasma etching. The method also involves thinning the passivation layer to partially expose the metal pillar/solder bump pairs of the integrated circuits.

64. 发明授权

US09177861B1 Hybrid wafer dicing approach using laser scribing process based on an elliptical laser beam profile or a spatio-temporal controlled laser beam profile 有权
标题翻译：使用基于椭圆激光束轮廓或时空控制激光束轮廓的激光划线工艺的混合晶片切割方法
公开(公告)号：US09177861B1
公开(公告)日：2015-11-03
申请号：US14491728
申请日：2014-09-19
申请人： Jungrae Park , Wei-Sheng Lei , James S. Papanu , Brad Eaton , Ajay Kumar
发明人： Jungrae Park , Wei-Sheng Lei , James S. Papanu , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/78 , H01L21/308 , H01L21/3065 , H01L21/67 , H01J37/32 , B23K26/36 , B23K26/16
CPC分类号： H01L21/3065 , B23K26/0736 , B23K26/367 , B23K26/38 , B23K2103/56 , H01J37/32 , H01J37/32889 , H01J2237/334 , H01J2237/335 , H01L21/02057 , H01L21/30655 , H01L21/3081 , H01L21/3086 , H01L21/67069 , H01L21/67092 , H01L21/78
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with an elliptical or a spatio-temporal controlled laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。然后用椭圆形或空间 - 时间控制的激光束轮廓激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

65. 发明授权

US09159621B1 Dicing tape protection for wafer dicing using laser scribe process 有权
标题翻译：切割胶带保护用于使用激光划片工艺的晶片切割
公开(公告)号：US09159621B1
公开(公告)日：2015-10-13
申请号：US14272101
申请日：2014-05-07
申请人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/683
CPC分类号： H01L21/78 , H01L21/67092 , H01L21/6836 , H01L2221/68327 , H01L2221/68377
摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of scribing a semiconductor wafer having a plurality of integrated circuits involves adhering a backside of a semiconductor wafer to an inner portion of a carrier tape of a substrate carrier that includes a tape frame mounted above the carrier tape. The method also involves overlaying a protective frame above a front side of the semiconductor wafer and above an exposed outer portion of the carrier tape, the protective frame having an opening exposing an inner region of the front side of the semiconductor wafer. The method also involves laser scribing the front side of the semiconductor wafer with the protective frame in place.
摘要翻译：对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。在一个示例中，划片具有多个集成电路的半导体晶片的方法包括将半导体晶片的背面粘附到包括安装在载带上方的带框架的基板载体的载带的内部。该方法还包括将保护框架覆盖在半导体晶片的前侧上方并且在载带的暴露的外部部分上方，保护框架具有暴露半导体晶片的前侧的内部区域的开口。该方法还包括用保护框架将半导体晶片的前侧激光划片到位。

66. 发明申请

US20150214109A1 WAFER DICING USING HYBRID LASER SCRIBING AND PLASMA ETCH APPROACH WITH MASK PLASMA TREATMENT FOR IMPROVED MASK ETCH RESISTANCE 有权
标题翻译：使用混合激光切割和等离子体蚀刻方法进行抛光加工，具有改进的掩模抗蚀性的掩模等离子体处理
公开(公告)号：US20150214109A1
公开(公告)日：2015-07-30
申请号：US14167300
申请日：2014-01-29
申请人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar , James S. Papanu , Jungrae Park
发明人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar , James S. Papanu , Jungrae Park
IPC分类号： H01L21/78 , H01J37/32 , H01L21/67 , H01L21/308 , H01L21/3065
CPC分类号： H01L21/78 , B23K26/361 , B23K2103/172 , B23K2103/50 , H01L21/0273 , H01L21/3065 , H01L21/30655 , H01L21/3081 , H01L21/3086 , H01L21/31058 , H01L21/31127 , H01L21/67207
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask is exposed to a plasma treatment process to increase an etch resistance of the mask. The mask is patterned with a laser scribing process to provide gaps in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. Subsequent to exposing the mask to the plasma treatment process, the semiconductor wafer is plasma etched through the gaps in the mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模包括覆盖并保护集成电路的层。将掩模暴露于等离子体处理工艺以增加掩模的耐蚀刻性。用激光划线工艺对掩模进行图案化，以在掩模中提供间隙，使间隙暴露集成电路之间的半导体晶片的区域。在将掩模暴露于等离子体处理工艺之后，通过掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

67. 发明授权

US09076860B1 Residue removal from singulated die sidewall 有权
标题翻译：从单个模具侧壁残留除去
公开(公告)号：US09076860B1
公开(公告)日：2015-07-07
申请号：US14248165
申请日：2014-04-08
申请人： Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Ajay Kumar , Brad Eaton
发明人： Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Ajay Kumar , Brad Eaton
IPC分类号： H01L21/78 , H01L21/3065 , H01L21/308 , H01L21/67
CPC分类号： H01L21/02076 , H01L21/67092 , H01L21/67207
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a laser scribing process to provide gaps in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the gaps in the mask to singulate the integrated circuits. The method also involves, subsequent to plasma etching the semiconductor wafer, removing etch residue from sidewalls of the singulated integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模包括覆盖并保护集成电路的层。该方法还包括用激光划线工艺对掩模进行图案化以在掩模中提供间隙，在半导体晶片的间隙暴露集成电路之间的半导体晶片。该方法还包括通过掩模中的间隙等离子体蚀刻半导体晶片以对集成电路进行分离。该方法还涉及在等离子体蚀刻半导体晶片之后，从单个集成电路的侧壁去除蚀刻残留物。

68. 发明授权

US09048309B2 Uniform masking for wafer dicing using laser and plasma etch 有权
标题翻译：使用激光和等离子体蚀刻的晶圆切割均匀掩模
公开(公告)号：US09048309B2
公开(公告)日：2015-06-02
申请号：US13917366
申请日：2013-06-13
申请人： Mohammad Kamruzzaman Chowdhury , Wei-Sheng Lei , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
发明人： Mohammad Kamruzzaman Chowdhury , Wei-Sheng Lei , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/78
CPC分类号： H01L21/78
摘要： Uniform masking for wafer dicing using laser and plasma etch is described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits having bumps or pillars includes uniformly spinning on a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：描述了使用激光和等离子体蚀刻的用于晶片切割的均匀掩模。在一个例子中，对具有多个具有凸起或柱状的集成电路的半导体晶片进行切割的方法包括在半导体晶片上方的掩模上均匀地旋转，该掩模由覆盖并保护集成电路的层组成。然后用激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙蚀刻半导体晶片，以对集成电路进行分离。

69. 发明申请

US20150122419A1 LASER AND PLASMA ETCH WAFER DICING WITH A DOUBLE SIDED UV-CURABLE ADHESIVE FILM 审中-公开
标题翻译：激光和等离子切割带双面紫外线固化胶片
公开(公告)号：US20150122419A1
公开(公告)日：2015-05-07
申请号：US14595120
申请日：2015-01-12
申请人： Mohammad Kamruzzaman Chowdhury , Wei-Sheng Lei , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
发明人： Mohammad Kamruzzaman Chowdhury , Wei-Sheng Lei , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/67 , B23K26/36 , B23K26/40 , H01L21/683
CPC分类号： H01L21/67155 , B23K26/0624 , B23K26/0661 , B23K26/18 , B23K26/361 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/50 , H01L21/67069 , H01L21/67115 , H01L21/67207 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L2221/68327 , H01L2221/68381
摘要： Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.
摘要翻译：激光和等离子体蚀刻晶圆切割使用紫外光固化粘合膜。形成覆盖在晶片上形成的IC的掩模，以及提供与IC的接口的任何凸块。半导体晶片通过双面UV固化粘合剂膜耦合到载体基板。通过激光划线将掩模图案化以提供具有间隙的图案化掩模。图案化使得半导体晶片的区域在形成IC的薄膜层之下露出。然后通过图案化掩模中的间隙蚀刻半导体晶片，以对IC进行单片化。 UV固化粘合剂膜通过载体的UV照射部分固化。然后将分离的IC从仍然附着到载体基底上的部分固化的粘合剂膜分离，例如通过拾取和放置机单独分离。然后可以进一步固化可UV固化的粘合剂膜，以使膜完全从载体基材上除去。

70. 发明申请

US20150079761A1 Wafer Dicing from Wafer Backside and Front Side 有权
标题翻译：晶圆片背面和正面切片
公开(公告)号：US20150079761A1
公开(公告)日：2015-03-19
申请号：US14103534
申请日：2013-12-11
申请人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/82
CPC分类号： H01L21/78 , B23K26/32 , B23K26/364 , B23K26/40 , B23K26/402 , B23K2103/08 , B23K2103/172 , B23K2103/42 , B23K2103/50 , B23K2103/56 , H01L21/3081 , H01L21/31127 , H01L21/3213 , H01L21/6836 , H01L23/544 , H01L2221/68327 , H01L2221/6834 , H01L2223/54433 , H01L2223/54473 , H01L2924/0002 , H01L2924/00
摘要： Approaches for backside laser scribe plus front side laser scribe and plasma etch dicing of a wafer or substrate are described. For example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side thereof and metallization on a backside thereof involves patterning the metallization on the backside with a first laser scribing process to provide a first plurality of laser scribe lines on the backside. The method also involves forming a mask on the front side. The method also involves patterning, from the front side, the mask with a second laser scribing process to provide a patterned mask with a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits, wherein the second plurality of scribe lines is aligned with the first plurality of scribe lines. The method also involves plasma etching the semiconductor wafer through the second plurality of scribe lines to singulate the integrated circuits.
摘要翻译：描述了用于背面激光划片加正面激光划线和等离子体蚀刻切割晶片或衬底的方法。例如，在其前侧划分具有多个集成电路的半导体晶片的方法，其背面上的金属化包括用第一激光划线工艺在背面上图案化金属化，以在第一激光划线工艺上提供第一多个激光划线背面。该方法还涉及在前侧形成掩模。该方法还包括利用第二激光划线工艺从正面图案化掩模，以提供具有暴露在集成电路之间的半导体晶片的区域的第二多个划线的图案化掩模，其中第二多个划线是与第一组多个划线对准。该方法还包括通过第二多个划线对等离子体蚀刻半导体晶片以对集成电路进行分离。

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