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61. 发明授权

US07381965B2 Radiographic imaging substrate, radiographic imaging apparatus, and radiographic imaging system 失效
标题翻译：射线照相成像基片，放射成像装置和放射成像系统
公开(公告)号：US07381965B2
公开(公告)日：2008-06-03
申请号：US11683184
申请日：2007-03-07
申请人： Takamasa Ishii , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
发明人： Takamasa Ishii , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
IPC分类号： G01T1/20 , H01L27/146
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14609 , H01L27/14663 , H01L27/14676 , H01L27/14687
摘要： A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of an identical type of the bias line, the signal line, and the gate line, wherein at least a part of the connection wiring is arranged between the region on the insulating substrate and an edge of the insulating substrate. With this arrangement, it becomes possible to provide a panel for a radiographic imaging apparatus and a radiographic imaging apparatus free from deterioration in device performance and device destruction caused by a static electricity even if a substrate is electrically charged in a manufacturing process.
摘要翻译：一种放射线摄影成像装置，包括：光电转换基板，包括像素区域，其中排列有由光电转换元件形成的多个像素和连接到形成在绝缘基板上的矩阵中的光电转换元件的开关元件，用于向光电转换元件施加偏压的偏置线，用于向开关元件提供驱动信号的栅极线和用于读取在光电转换元件中转换的电荷的信号线; 波长转换元件，用于将辐射转换成能够由光电转换元件检测的光，所述波长转换元件根据包括像素区域的区域设置; 以及连接布线，其具有连接到相同类型的偏置线，信号线和栅极线的至少多条线的光电转换层，其中连接布线的至少一部分布置在绝缘基板和绝缘基板的边缘。利用这种布置，即使在制造过程中基板被充电，也可以提供一种用于放射线照相成像装置和放射线照相成像装置的面板，其不会因静电而导致的装置性能和装置破坏的劣化。

62. 发明申请

US20080099688A1 RADIOGRAPHIC IMAGING SUBSTRATE, RADIOGRAPHIC IMAGING APPARATUS, AND RADIOGRAPHIC IMAGING SYSTEM 有权
标题翻译：放射成像基板，放射成像装置和放射成像系统
公开(公告)号：US20080099688A1
公开(公告)日：2008-05-01
申请号：US11957843
申请日：2007-12-17
申请人： Takamasa Ishii , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
发明人： Takamasa Ishii , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14609 , H01L27/14663 , H01L27/14676 , H01L27/14687
摘要： A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of an identical type of the bias line, the signal line, and the gate line, wherein at least a part of the connection wiring is arranged between the region on the insulating substrate and an edge of the insulating substrate. With this arrangement, it becomes possible to provide a panel for a radiographic imaging apparatus and a radiographic imaging apparatus free from deterioration in device performance and device destruction caused by a static electricity even if a substrate is electrically charged in a manufacturing process.
摘要翻译：一种放射线摄影成像装置，包括：光电转换基板，包括像素区域，其中排列有由光电转换元件形成的多个像素和连接到形成在绝缘基板上的矩阵中的光电转换元件的开关元件，用于向光电转换元件施加偏压的偏置线，用于向开关元件提供驱动信号的栅极线和用于读取在光电转换元件中转换的电荷的信号线; 波长转换元件，用于将辐射转换成能够由光电转换元件检测的光，所述波长转换元件根据包括像素区域的区域设置; 以及连接布线，其具有连接到相同类型的偏置线，信号线和栅极线的至少多条线的光电转换层，其中连接布线的至少一部分布置在绝缘基板和绝缘基板的边缘。利用这种布置，即使在制造过程中基板被充电，也可以提供一种用于放射线照相成像装置和放射线照相成像装置的面板，其不会因静电而导致的装置性能和装置破坏的劣化。

63. 发明申请

US20070115379A1 PHOTOELECTRIC CONVERSION APPARATUS AND PHOTOELECTRIC CONVERSION SYSTEM HAVING THE APPARATUS 失效
标题翻译：具有装置的光电转换装置和光电转换系统
公开(公告)号：US20070115379A1
公开(公告)日：2007-05-24
申请号：US11620997
申请日：2007-01-08
申请人： Tadao ENDO , Noriyuki Kaifu , Toshiaki Sato , Masakazu Morishita
发明人： Tadao ENDO , Noriyuki Kaifu , Toshiaki Sato , Masakazu Morishita
IPC分类号： H04N5/335
CPC分类号： H04N5/363 , H01L27/14609 , H04N5/32 , H04N5/335 , H04N5/365 , H04N5/3742 , H04N5/378
摘要： In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the form of serial signals.
摘要翻译：为了提供一种光电转换装置，其是读取速度高，S / N高，色调级高，成本低的装置，具有包含多个光电转换元件的光电转换电路部，切换为了输出并行信号而配置在同一基板上的元件，矩阵信号线和栅极驱动线，用于向栅极驱动线施加驱动信号的驱动电路部，以及用于将通过矩阵信号线连接到串行信号以输出它们，其中读取电路部分包括与每个矩阵信号线连接的至少一个模拟运算放大器，用于传送来自各个矩阵信号线的输出信号的转换开关，通过每个放大器输出的读数电容器和读取开关，用于连续读取readi中的信号串联信号形式的电容器。

64. 发明申请

US20070069107A1 Radiation image pick-up device and method therefor, and radiation image pick-up system 失效
标题翻译：辐射摄像装置及其方法及放射摄像系统
公开(公告)号：US20070069107A1
公开(公告)日：2007-03-29
申请号：US10576349
申请日：2004-11-10
申请人： Takamasa Ishii , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
发明人： Takamasa Ishii , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
IPC分类号： H01L27/00
CPC分类号： H04N5/3745 , H01L27/14632 , H01L27/14658 , H01L27/14663 , H04N5/35527
摘要： Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.
摘要翻译：灵敏度可自由地变化为与拍摄模式相对应的灵敏度，并且静止图像拍摄和例如在暴露于辐射的剂量中彼此大不相同并且在所需灵敏度上彼此不同的动态图像拍摄中，进行，以满足这一要求。 TFT21的源极或漏极通过信号线14a和IC5连接到信号输出电路3. TFT23的源极/漏极通过信号线14b连接到信号输出电路3 因此，在每个像素6中，当读出信号时，信号线14a和14b中的任何一个可以自由地选择。

65. 发明申请

US20060091390A1 Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system 失效
公开(公告)号：US20060091390A1
公开(公告)日：2006-05-04
申请号：US11294519
申请日：2005-12-06
申请人： Toshiko Morii , Masakazu Morishita , Minoru Watanabe
发明人： Toshiko Morii , Masakazu Morishita , Minoru Watanabe
IPC分类号： H01L29/04
CPC分类号： H01L27/14658
摘要： An image pickup apparatus or a radiation image pickup apparatus according to the present invention includes: a plurality of pixels which are two-dimensionally arranged on a substrate, each of the plurality of pixels including a set of a semiconductor conversion element that converts an incident electromagnetic wave into an electrical signal and a switching element connected with the semiconductor conversion element; a drive wiring which is commonly connected with the plurality of switching elements arranged in a direction; and a signal wiring which is commonly connected with the plurality of switching elements arranged in a direction different from the direction, the switching element including a first semiconductor layer, the semiconductor conversion element being formed after the switching elements are formed and including the second semiconductor layer formed after the first semiconductor layer is formed, in which the semiconductor conversion element has an electrode formed outside a region in which two of the drive wiring, an electrode of the switching element, and the signal wiring overlap each other, exclusive of at least part of a region above the drive wiring and at least part of a region above the electrode of the switching element.

66. 发明申请

US20060062352A1 Solid-state image pickup device and radiation image pickup device 失效
标题翻译：固态图像拾取装置和放射线图像拾取装置
公开(公告)号：US20060062352A1
公开(公告)日：2006-03-23
申请号：US10537907
申请日：2004-02-10
申请人： Keiichi Nomura , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii
发明人： Keiichi Nomura , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii
IPC分类号： H05G1/64
CPC分类号： H04N5/32 , H01L27/14603 , H01L27/14658
摘要： A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements, characterized in that the photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and is characterized in that the radiation conversion layer is formed above one or more switching elements, and a shielding electrode layer is disposed between the switching elements and the radiation conversion layer.
摘要翻译：根据本发明的固态摄像装置具有多个光电转换元件和多个开关元件，其特征在于，所述光电转换元件形成在至少一个开关元件上方，并且屏蔽电极层设置在开关元件和光电转换元件。此外，根据本发明的放射线摄像装置具有用于将辐射直接转换为电荷的辐射转换层和多个开关元件，其特征在于，所述辐射转换层形成在一个或多个开关元件上方，并且在开关元件和辐射转换层之间设置屏蔽电极层。

67. 发明授权

US06953934B2 Radiation detection apparatus and system 失效
标题翻译：辐射检测装置及系统
公开(公告)号：US06953934B2
公开(公告)日：2005-10-11
申请号：US10376603
申请日：2003-03-03
申请人： Keiichi Nomura , Masakazu Morishita
发明人： Keiichi Nomura , Masakazu Morishita
IPC分类号： G01T1/24 , G01T1/29
CPC分类号： G01T1/2018 , G01T1/2928
摘要： The invention is to provide a radiation detection apparatus adapted for taking a moving image. The radiation detection apparatus has a pixel including a phosphor for converting radiation into light, a photoelectric conversion unit for converting the light converted in the phosphor into an electrical signal, a thin film transistor (TFT 1) for transferring the electrical signal converted in the photoelectric conversion unit, a capacitance for accumulating the electrical signal transferred by the thin film transistor (TFT 1), and a thin film transistor (TFT 2) for reading the electrical signal accumulated in the capacitance. The photoelectric conversion unit, the thin film transistor (TFT 1), the capacitance and the thin film transistor (TFT 2) are formed by a same layer configuration, and is each formed at least by a lower electrode or a gate electrode, a gate insulation film and a semiconductor layer and separated by a protective layer from the phosphor.
摘要翻译：本发明提供适于拍摄运动图像的放射线检测装置。放射线检测装置具有像素，包括用于将辐射转换为光的荧光体的像素，用于将在磷光体中转换的光转换为电信号的光电转换单元，用于传送转换为光电的电信号的薄膜晶体管（TFT 1）转换单元，用于累积由薄膜晶体管（TFT 1）传送的电信号的电容，以及用于读取累积在电容中的电信号的薄膜晶体管（TFT2）。光电转换单元，薄膜晶体管（TFT 1），电容和薄膜晶体管（TFT2）由相同的层结构形成，并且至少由下电极或栅电极形成，栅极绝缘膜和半导体层，并由保护层与荧光体隔开。

68. 发明授权

US5734183A Heterojunction bipolar transistor structure 失效
标题翻译：异质结双极晶体管结构
公开(公告)号：US5734183A
公开(公告)日：1998-03-31
申请号：US412847
申请日：1995-03-29
申请人： Masakazu Morishita
发明人： Masakazu Morishita
IPC分类号： H01L29/08 , H01L29/10 , H01L29/165 , H01L29/735 , H01L29/737 , H01L31/0328 , H01L29/00 , H01L31/0336
CPC分类号： H01L29/1008 , H01L29/0895 , H01L29/165 , H01L29/735 , H01L29/737
摘要： A semiconductor device is provided with an emitter area and a collector area of a first conductive type and a base area of a second conductive type, arranged in a horizontal structure. The semiconductor device comprises an area constituting at least a part of the base area, being in contact with a part of the base area at least positioned between the emitter and collector areas, and having a narrower forbidden band than in the base area.
摘要翻译：半导体器件具有布置在水平结构中的第一导电类型和第二导电类型的基极区域的发射极区域和集电极区域。半导体器件包括构成基极区域的至少一部分的区域，其与至少位于发射极和集电极区域之间的基极区域的一部分接触，并且具有比在基底区域中更窄的禁带。

69. 发明授权

US5602413A Avalanche phototransistor 失效
标题翻译：雪崩光电晶体管
公开(公告)号：US5602413A
公开(公告)日：1997-02-11
申请号：US57455
申请日：1993-05-07
申请人： Masakazu Morishita
发明人： Masakazu Morishita
IPC分类号： H01L31/10 , H01L31/107 , H01L31/11
CPC分类号： H01L31/1105
摘要： A bipolar avalanche phototransistor has a thin, heavily doped base portion adjacent the collector to improve avalanche characteristics. The structure may have a lateral, as well as vertical, collector, with the thin heavily doped base portion adjoining the surface lateral collector.
摘要翻译：双极雪崩光电晶体管具有邻近集电极的薄的，重掺杂的基极部分，以改善雪崩特性。该结构可以具有横向和垂直的收集器，其中薄的重掺杂基底部分邻接表面横向收集器。

70. 发明授权

US5583361A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5583361A
公开(公告)日：1996-12-10
申请号：US347842
申请日：1994-12-01
申请人： Masakazu Morishita
发明人： Masakazu Morishita
IPC分类号： H01L29/78 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/10 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/1083 , H01L29/66575 , H01L29/6659 , H01L29/66621 , H01L29/7833
摘要： A semiconductor device is provided with a semiconductor at least including a source and a drain of a conductive type with a high impurity concentration and a channel area of a second conductive type opposite to the first conductive type, positioned between the source and drain, an insulation layer covering at least the channel area, and a gate electrode of a conductive material positioned adjacent to the insulation layer. A pn junction is positioned below the insulated gate electrode. A depletion layer extending from the pn junction at least reaches the source and drain areas.
摘要翻译：半导体器件设置有至少包括具有高杂质浓度的导电类型的源极和漏极以及位于源极和漏极之间的与第一导电类型相反的第二导电类型的沟道区域的半导体，绝缘体至少覆盖通道区域的层，和邻近绝缘层定位的导电材料的栅电极。 pn结位于绝缘栅极下方。从pn结延伸的耗尽层至少到达源区和漏区。

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