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    • 61. 发明授权
    • Circuitry and method for correcting 3-bit errors containing adjacent 2-bit error
    • 用于校正包含相邻2位错误的3位错误的电路和方法
    • US09203437B2
    • 2015-12-01
    • US13720780
    • 2012-12-19
    • Thomas KernUlrich BackhausenThomas RabenaltChristian BadackMichael Goessel
    • Thomas KernUlrich BackhausenThomas RabenaltChristian BadackMichael Goessel
    • H03M13/15H03M13/00H03M13/53
    • H03M13/152H03M13/1575H03M13/616
    • A circuitry is proposed for the correction of errors in a possibly erroneous binary word v′=v′1, . . . , v′n relative to a codeword v=v1, . . . , vn, in particular 3-bit errors containing an adjacent 2-bit error (burst error). The circuitry comprises a syndrome generator and a decoder. A modified BCH is used wherein n′ column vectors of a first BCH code submatrix are paired as column vector pairs so that a componentwise XOR combination of the two column vectors of each column vector pair produces an identical column vector K that is different from all column vectors of the first BCH submatrix. A second BCH submatrix comprises corresponding column vectors as the third power, according to Galois field arithmetic, of the column vector in the first BCH submatrix. The syndrome generated by the syndrome generator can be checked against the columns of the first and second submatrices.
    • 提出了用于校正可能错误的二进制字v'= v'1中的错误的电路。 。 。 ,v'n相对于码字v = v1,。 。 。 ,vn,特别是包含相邻2位错误(突发错误)的3位错误。 电路包括校正子发生器和解码器。 使用修改的BCH,其中第一BCH码子矩阵的n个列向量作为列向量对配对,使得每个列向量对的两个列向量的分量XOR组合产生与所有列不同的相同列向量K 第一个BCH子矩阵的向量。 第二BCH子矩阵包括根据第一BCH子矩阵中的列向量的伽罗瓦域算术的作为第三功率的相应的列向量。 可以针对第一和第二子矩阵的列检查由发生器产生的综合征。
    • 62. 发明授权
    • Variable focus lens having two liquid chambers
    • 具有两个液体室的可变焦距透镜
    • US08947784B2
    • 2015-02-03
    • US13823034
    • 2010-10-26
    • Thomas Kern
    • Thomas Kern
    • G02B3/14B29D11/00G02B26/00
    • G02B3/14B29D11/00403G02B26/004
    • A variable focus lens has a housing (1) and an actuator (8) which are mutually displaceable along an optical axis (A) of the lens. A primary membrane (15) is arranged between a first chamber (24, 26) and a second chamber (30, 32), with the first and second chambers being filled with liquids of similar density but different indices of refraction. First and second auxiliary membranes (19, 17) are provided for volume compensation. The first auxiliary membrane (19) forms a wall section of the first chamber (24, 26), and the second auxiliary membrane (17) forms a wall section of the second chamber (30, 32), at least one or both of the auxiliary membranes facing environmental air at its outer side.
    • 可变焦距透镜具有可沿着透镜的光轴(A)相互移位的壳体(1)和致动器(8)。 初级膜(15)布置在第一室(24,26)和第二室(30,32)之间,其中第一和第二室充满类似密度但不同折射率的液体。 第一和第二辅助膜(19,17)用于体积补偿。 第一辅助膜(19)形成第一腔室(24,26)的壁部分,第二辅助膜(17)形成第二腔室(30,32)的壁部分,至少一个或两个 辅助膜在其外侧面向环境空气。
    • 65. 发明授权
    • Device and method for testing a circuit to be tested
    • 用于测试待测电路的装置和方法
    • US08856629B2
    • 2014-10-07
    • US13606919
    • 2012-09-07
    • Thomas KernUlrich BackhausenMichael GoesselThomas Rabenalt
    • Thomas KernUlrich BackhausenMichael GoesselThomas Rabenalt
    • H03M13/00G01R31/28G06F11/00
    • G06F11/10G06F11/2215H03M13/09
    • A device for testing a circuit includes a syndrome determiner, a test sequence provider and an evaluation circuit. The syndrome determiner determines an error syndrome bit sequence (s(v′)) based on a coded binary word (v′). The error syndrome bit sequence (s(v′)) indicates whether the coded binary word (v′) is a code word of an error correction code (C) used for coding the coded binary word (v′). The test sequence provider provides a test bit sequence (Ti) of the circuit that is different than the error syndrome bit sequence (s(v′)), if the error syndrome bit sequence (s(v′)) indicates that the coded binary word (v′) is a code word of the error correction code (C). The evaluation circuit detects an erroneous processing of the test bit sequence (Ti) by the circuit based on a test output signal (R(Ti)′)—caused by the test bit sequence (Ti)—of the circuit.
    • 用于测试电路的装置包括校正子确定器,测试序列提供器和评估电路。 校正子确定器基于编码的二进制字(v')来确定错误校正子位序列(s(v'))。 误差校正位序列(s(v'))表示编码的二进制字(v')是否是用于对编码的二进制字(v')进行编码的纠错码(C)的码字。 如果错误校正子序列(s(v'))指示编码的二进制码(s(v')),则测试序列提供者提供与错误校正子比特序列(s(v'))不同的电路的测试比特序列(Ti) 字(v')是纠错码(C)的码字。 评估电路基于由电路的测试比特序列(Ti)引起的测试输出信号(R(Ti)')检测由该电路的测试比特序列(Ti)的错误处理。
    • 68. 发明申请
    • Mismatch Error Reduction Method and System for STT MRAM
    • STT MRAM的不匹配误差减少方法和系统
    • US20140063923A1
    • 2014-03-06
    • US13605693
    • 2012-09-06
    • Mihail JefremowWolf AllersJan OtterstedtChristian PetersThomas Kern
    • Mihail JefremowWolf AllersJan OtterstedtChristian PetersThomas Kern
    • G11C7/06G11C11/16
    • G11C11/1673
    • The invention relates to methods and systems for reading a memory cell and in particular, an STT MRAM. In accordance with one aspect of the invention, a method for reading a memory cell includes combining a cell current from a memory cell with a reference current from a reference source to create an average current, enabling the average current to flow through a first mirror transistor in a sense path and a second mirror transistor in a reference path, storing the current mismatch on a capacitor coupled to the gates of the first mirror transistor and the second mirror transistor, disconnecting the memory cell from the reference path and disconnecting the reference source from the sense path, enabling the cell current only to flow through the sense path, and determining the output level of the memory cell.
    • 本发明涉及用于读取存储器单元,特别是STT MRAM的方法和系统。 根据本发明的一个方面,一种用于读取存储单元的方法包括将来自存储单元的单元电流与来自参考源的参考电流组合以产生平均电流,使平均电流能够流过第一镜像晶体管 在参考路径中的感测路径和第二镜像晶体管中,将电流失配存储在耦合到第一镜面晶体管和第二镜像晶体管的栅极的电容器上,将存储器单元与参考路径断开并将参考源与 感测路径,使得电池电流仅能够流过感测路径,并且确定存储器单元的输出电平。