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61. 发明授权

US6081308A Method for manufacturing liquid crystal display 失效
标题翻译：制造液晶显示器的方法
公开(公告)号：US6081308A
公开(公告)日：2000-06-27
申请号：US31445
申请日：1998-02-26
申请人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jueng-Gil Lee
发明人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jueng-Gil Lee
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/28 , H01L23/482 , H01L29/423 , H01L29/49 , G02F1/136 , G02F1/1343 , H01L23/48 , H01L29/04
CPC分类号： G02F1/1368 , G02F1/136286 , H01L21/28008 , H01L23/4827 , H01L29/42384 , H01L29/4908 , G02F1/136227 , G02F2001/13629 , H01L2924/0002
摘要： Since Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single Mo or MoW layer can be used as a wiring by itself of large scale and high resolution liquid crystal. The Mo or MoW layer has the low resistivity of less than 15 .mu..OMEGA.cm and is etched to have a smooth taper angle using an Al etchant with Al or Al alloy. Therefore, it is possible to reduce the number of photolithography processes and to prevent a battery effect and generation of a hillock.
摘要翻译：由于通过调整沉积压力可以沉积Mo或MoW层以便对衬底施加低应力，所以可以使用单个Mo或MoW层作为大规模和高分辨率液晶本身的布线。 Mo或MoW层具有小于15微米欧米伽厘米的低电阻率，并且使用Al或Al合金的Al蚀刻剂被蚀刻以具有平滑的锥角。因此，可以减少光刻工艺的数量并防止电池效应和产生小丘。

62. 发明授权

US08558230B2 Thin film transistor substrate and method of fabricating the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08558230B2
公开(公告)日：2013-10-15
申请号：US12756323
申请日：2010-04-08
申请人： Dong-Hoon Lee , Je-Hun Lee , Do-Hyun Kim , Hee-Tae Kim , Chang-Oh Jeong , Pil-Sang Yun , Ki-Won Kim
发明人： Dong-Hoon Lee , Je-Hun Lee , Do-Hyun Kim , Hee-Tae Kim , Chang-Oh Jeong , Pil-Sang Yun , Ki-Won Kim
IPC分类号： H01L29/04 , H01L29/10
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/1288 , H01L29/7869
摘要： A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.
摘要翻译：提供薄膜晶体管（TFT）基板及其制造方法。薄膜晶体管基板可以具有低电阻特性，并且可以减少有源层图案和数据布线之间的相互扩散和接触电阻。薄膜晶体管基板可以包括形成在绝缘基板上的栅极布线。氧化物有源层图案可以形成在栅极布线上，并且可以包括第一物质。数据布线可以形成在氧化物有源层图案上以跨越栅极布线，并且可以包括第二物质。阻挡层图案可以设置在氧化物活性层图案和数据布线之间，并且可以包括第三物质。

63. 发明授权

US08524549B2 Method of fabricating thin-film transistor substrate 有权
标题翻译：制造薄膜晶体管基板的方法
公开(公告)号：US08524549B2
公开(公告)日：2013-09-03
申请号：US13191833
申请日：2011-07-27
申请人： Hyung-Jun Kim , Chang-Oh Jeong , Il-Yong Yoon
发明人： Hyung-Jun Kim , Chang-Oh Jeong , Il-Yong Yoon
IPC分类号： H01L21/268
CPC分类号： H01L21/268 , H01L21/02675 , H01L21/02678 , H01L27/1229 , H01L27/1274 , H01L29/66765 , H01L29/78696
摘要： A method of fabricating a thin-film transistor (TFT) substrate includes forming a gate electrode on a substrate; forming an insulating film on the gate electrode; forming an amorphous semiconductor pattern on the insulating film; and forming a source electrode separated from a drain electrode on the amorphous semiconductor pattern; forming a light-concentrating layer, which includes a protrusion, on the amorphous semiconductor pattern, the source electrode, and the drain electrode; and crystallizing at least part of the amorphous semiconductor pattern by irradiating light to the protrusion of the light-concentrating layer.
摘要翻译：制造薄膜晶体管（TFT）基板的方法包括在基板上形成栅电极; 在栅电极上形成绝缘膜; 在所述绝缘膜上形成非晶半导体图案; 以及形成与所述非晶半导体图案上的漏电极分离的源电极; 在所述非晶半导体图案，所述源电极和所述漏电极上形成包括突起的聚光层; 以及通过向所述聚光层的所述突起照射光而使所述非晶半导体图案的至少一部分结晶。

64. 发明授权

US08507956B2 Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate 有权
标题翻译：线结构，制造线的方法，薄膜晶体管基板以及制造薄膜晶体管基板的方法
公开(公告)号：US08507956B2
公开(公告)日：2013-08-13
申请号：US13051904
申请日：2011-03-18
申请人： Je-Hun Lee , Chang-Oh Jeong , Eun-Guk Lee , Do-Hyun Kim
发明人： Je-Hun Lee , Chang-Oh Jeong , Eun-Guk Lee , Do-Hyun Kim
IPC分类号： H01L33/00 , H01L29/43 , H01L29/49 , H01L29/76
CPC分类号： H01L29/458 , H01L27/124 , H01L29/4908
摘要： Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including a copper layer and a copper solid solution layer.
摘要翻译：提供线结构，制造线的方法，薄膜晶体管（TFT）基板和制造TFT基板的方法。导线结构包括在基板上形成的包含铜层和铜固溶体层的阻挡层。

65. 发明授权

US08492190B2 Method for manufacturing display panel 失效
标题翻译：显示面板制造方法
公开(公告)号：US08492190B2
公开(公告)日：2013-07-23
申请号：US13472716
申请日：2012-05-16
申请人： Joo-Ae Youn , Yang-Ho Bae , Chang-Oh Jeong , Chong-Chul Chai , Pil-Sang Yun , Honglong Ning , Byeong-Beom Kim
发明人： Joo-Ae Youn , Yang-Ho Bae , Chang-Oh Jeong , Chong-Chul Chai , Pil-Sang Yun , Honglong Ning , Byeong-Beom Kim
IPC分类号： H01L29/04
CPC分类号： H01L33/0041 , H01L27/124 , H01L29/458
摘要： A method for manufacturing a display panel includes; formation of a lower gate line, disposal of a semiconductor on the lower gate line, disposal of a lower data line substantially perpendicular to the lower gate line, disposal of an insulating layer having a plurality of trenches exposing the lower gate line and the lower data line on the lower data line, disposal of an upper gate line directly on the lower gate line and within the plurality of trenches, and disposal of an upper data line directly on the lower data line and within the plurality of trenches.
摘要翻译：一种显示面板的制造方法，形成下栅极线，在下栅极线上处理半导体，处理基本上垂直于下栅极线的下数据线，处理具有暴露下栅极线的多个沟槽的绝缘层和较低数据在下数据线上行，直接在下栅极线上和多个沟槽内处理上栅极线，以及直接在下数据线上和多个沟槽内处置上数据线。

66. 发明授权

US07902553B2 Thin film transistor array panel and method for manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07902553B2
公开(公告)日：2011-03-08
申请号：US11930536
申请日：2007-10-31
申请人： Byoung-June Kim , Jae-Ho Choi , Chang-Oh Jeong , Sung-Hoon Yang , Je-Hun Lee , Do-Hyun Kim , Hwa-Yeul Oh , Yong-Mo Choi
发明人： Byoung-June Kim , Jae-Ho Choi , Chang-Oh Jeong , Sung-Hoon Yang , Je-Hun Lee , Do-Hyun Kim , Hwa-Yeul Oh , Yong-Mo Choi
IPC分类号： H01L29/04
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L29/41733 , H01L29/4908 , H01L29/66742 , H01L29/66765
摘要： A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.
摘要翻译：薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。

67. 发明授权

US07888148B2 Signal line for a display device, etchant, thin film transistor panel, and method for manufacturing the same 有权
标题翻译：用于显示装置，蚀刻剂，薄膜晶体管面板的信号线及其制造方法
公开(公告)号：US07888148B2
公开(公告)日：2011-02-15
申请号：US11850922
申请日：2007-09-06
申请人： Hong-Sick Park , Bong-Kyun Kim , Chang-Oh Jeong , Jong-Hyun Choung , Sun-Young Hong , Won-Suk Shin , Byeong-Jin Lee
发明人： Hong-Sick Park , Bong-Kyun Kim , Chang-Oh Jeong , Jong-Hyun Choung , Sun-Young Hong , Won-Suk Shin , Byeong-Jin Lee
IPC分类号： H01L21/00
CPC分类号： C09K13/08 , G09G2300/0426 , G09G2300/0439 , G09G2320/0223 , H01L23/53238 , H01L27/124 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A thin film panel includes a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, a data line, including a source electrode, and a drain electrode formed on the gate insulating layer or the semiconductor layer, and a pixel electrode connected to the drain electrode, wherein at least one of the gate line and the data line and drain electrode includes a first conductive layer made of a molybdenum Mo-niobium Nb alloy and a second conductive layer made of a copper Cu-containing metal.
摘要翻译：薄膜面板包括基板，形成在基板上的栅极线，形成在栅极线上的栅极绝缘层，形成在栅极绝缘层上的半导体层，包括源电极的数据线和形成的漏电极在所述栅极绝缘层或所述半导体层上形成的像素电极和与所述漏极连接的像素电极，其中所述栅极线和所述数据线和漏极的至少一个包括由钼Mo-Nb铌合金构成的第一导电层，以及由含铜铜金属制成的第二导电层。

68. 发明申请

US20110024759A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FORMING METAL WIRE THEREOF 审中-公开
标题翻译：薄膜晶体管基板及形成金属线的方法
公开(公告)号：US20110024759A1
公开(公告)日：2011-02-03
申请号：US12901324
申请日：2010-10-08
申请人： Jae-Gab LEE , Chang-Oh Jeong , Myung-Mo Sung , Hee-Jung Yang , Beom-Seok Cho
发明人： Jae-Gab LEE , Chang-Oh Jeong , Myung-Mo Sung , Hee-Jung Yang , Beom-Seok Cho
IPC分类号： H01L29/786 , H01L21/768
CPC分类号： H01L29/78603 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/4908 , H01L2224/32245
摘要： The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.
摘要翻译：薄膜晶体管基板及其金属布线方法技术领域本发明涉及薄膜晶体管基板及其金属布线方法，更具体地涉及在基板和金属布线之间包括自组装单层的薄膜晶体管基板及其金属布线。由于本发明的薄膜晶体管基板在Si表面和金属布线之间包含三维交联的自组装单层，因此具有良好的粘附能力和抗扩散能力。

69. 发明授权

US07879662B2 Thin film transistor, thin film transistor substrate including the same and method of manufacturing the same 有权
标题翻译：薄膜晶体管，包括其的薄膜晶体管基板及其制造方法
公开(公告)号：US07879662B2
公开(公告)日：2011-02-01
申请号：US12573385
申请日：2009-10-05
申请人： Yang-Ho Bae , Chang-Oh Jeong , Byeong-Beom Kim
发明人： Yang-Ho Bae , Chang-Oh Jeong , Byeong-Beom Kim
IPC分类号： H01L21/00
CPC分类号： H01L29/458 , H01L27/124
摘要： A thin film transistor showing desirable contact characteristics during contact with indium tin oxide (ITO) or indium zinc oxide (IZO), in which a first conductive pattern including a gate electrode and a second conductive pattern including a source electrode and a drain electrode are formed without an etching process, a TFT substrate including the TFTs, and a method of manufacturing the same. The thin film transistor includes a gate electrode formed of a first conductive layer, a gate insulating layer covering the gate electrode, a semiconductor layer forming a channel on the gate insulating layer; an ohmic contact layer formed on the semiconductor layer, and a source electrode and a drain electrode formed of a second conductive layer and of a third conductive layer. The second conductive layer includes an aluminum-nickel alloy and nitrogen and is formed on the semiconductor layer. The third conductive layer includes an aluminum-nickel alloy and is formed on the second conductive layer.
摘要翻译：在与铟锡氧化物（ITO）或铟锌氧化物（IZO）接触期间显示出期望的接触特性的薄膜晶体管，其中形成包括栅电极的第一导电图案和包括源电极和漏电极的第二导电图案没有蚀刻处理，包括TFT的TFT基板及其制造方法。薄膜晶体管包括由第一导电层形成的栅电极，覆盖栅电极的栅极绝缘层，在栅极绝缘层上形成沟道的半导体层; 形成在半导体层上的欧姆接触层，以及由第二导电层和第三导电层形成的源电极和漏电极。第二导电层包括铝 - 镍合金和氮，并形成在半导体层上。第三导电层包括铝镍合金，并形成在第二导电层上。

70. 发明申请

US20100276686A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20100276686A1
公开(公告)日：2010-11-04
申请号：US12756323
申请日：2010-04-08
申请人： Dong-Hoon Lee , Je-Hun Lee , Do-Hyun Kim , Hee-Tae Kim , Chang-Oh Jeong , Pil-Sang Yun , Ki-Won Kim
发明人： Dong-Hoon Lee , Je-Hun Lee , Do-Hyun Kim , Hee-Tae Kim , Chang-Oh Jeong , Pil-Sang Yun , Ki-Won Kim
IPC分类号： H01L29/786 , H01L29/12 , H01L21/336
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/1288 , H01L29/7869
摘要： A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.
摘要翻译：提供薄膜晶体管（TFT）基板及其制造方法。薄膜晶体管基板可以具有低电阻特性，并且可以减少有源层图案和数据布线之间的相互扩散和接触电阻。薄膜晶体管基板可以包括形成在绝缘基板上的栅极布线。氧化物有源层图案可以形成在栅极布线上，并且可以包括第一物质。数据布线可以形成在氧化物有源层图案上以跨越栅极布线，并且可以包括第二物质。阻挡层图案可以设置在氧化物活性层图案和数据布线之间，并且可以包括第三物质。

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