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61. 发明申请

US20050232325A1 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US20050232325A1
公开(公告)日：2005-10-20
申请号：US11070267
申请日：2005-03-03
申请人： Tetsuo Ueda , Masahiro Kume , Toshiya Kawata , Isao Kidoguchi
发明人： Tetsuo Ueda , Masahiro Kume , Toshiya Kawata , Isao Kidoguchi
IPC分类号： H01S5/227 , H01S5/00 , H01S5/02 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/168 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S5/4031 , H01S5/4087 , H01S2301/18
摘要： In a semiconductor laser 1, a current blocking layer 19 covers a p-type 2nd cladding layer 17 and a p-type cap layer 18 that extend in a lengthwise direction of an optical resonator, at both a light-emission end and an end opposite the light-emission end, to thus form non-current injection regions in an optical waveguide. By making current blocking layer 19 at the light-emission end large enough that carriers flowing from a current injection region do not reach the light-emission end surface, the light intensity distribution in the near field at the light-emission end surface is strongly concentrated, allowing the horizontal divergence angle of an emerging laser beam to be enlarged. This structure makes it possible to enlarge the horizontal divergence angle independently after having optimized the thickness of cladding layers and the size of the current injection region.
摘要翻译：在半导体激光器1中，电流阻挡层19覆盖在光谐振器的长度方向上延伸的p型2层包层17和p型覆盖层18，发光端和与发光端相对的端部，从而在光波导中形成非电流注入区域。通过使发光端处的电流阻挡层19足够大，使得从电流注入区域流动的载流子未到达发光端面，发光端面处的近场中的光强度分布被强烈集中允许出现的激光束的水平发散角被扩大。这种结构使得可以在优化包覆层的厚度和电流注入区域的尺寸之后独立地扩大水平发散角。

62. 发明授权

US06911351B2 Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same 有权
标题翻译：氮化物半导体的制造方法，氮化物半导体器件的制造方法，氮化物半导体器件，半导体发光器件及其制造方法
公开(公告)号：US06911351B2
公开(公告)日：2005-06-28
申请号：US10345377
申请日：2003-01-16
申请人： Isao Kidoguchi , Akihiko Ishibashi , Ryoko Miyanaga , Gaku Sugahara , Masakatsu Suzuki , Masahiro Kume , Yuzaburo Ban , Kiyoyuki Morita , Ayumu Tsujimura , Yoshiaki Hasegawa
发明人： Isao Kidoguchi , Akihiko Ishibashi , Ryoko Miyanaga , Gaku Sugahara , Masakatsu Suzuki , Masahiro Kume , Yuzaburo Ban , Kiyoyuki Morita , Ayumu Tsujimura , Yoshiaki Hasegawa
IPC分类号： H01L21/20 , H01L33/00 , H01L33/12 , H01L33/40 , H01L33/46 , H01S5/20 , H01S5/22 , H01S5/323 , H01S5/40 , H01L21/00
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L33/007 , H01L33/405 , H01L33/46 , H01S5/2077 , H01S5/2201 , H01S5/32341 , H01S5/4031 , H01S2304/00
摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w≦1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, C planes corresponding to top faces of the convexes exposed from the mask film.
摘要翻译：本发明的氮化物半导体的制造方法包括以下步骤：在衬底上形成AlGaN的第一氮化物半导体层， / SUB，其中0≤u，v，w <= 1，u + v + w = 1; 在所述第一氮化物半导体层的上部形成沿着基板表面方向间隔地延伸的多个凸部; 形成用于覆盖形成在彼此相邻的凸起之间的凹部的底部的掩模膜; 并且在所述第一氮化物半导体层上生长Al 2 O 3的第二氮化物半导体层，其中0 <= x ，y，z <= 1和x + y + z = 1，通过使用对应于从掩模膜暴露的凸起的顶面的C面作为晶种。

63. 发明授权

US6127201A Method for etching a compound semiconductor, a semiconductor laser device and method for producing the same 失效
标题翻译：蚀刻化合物半导体的方法，半导体激光装置及其制造方法
公开(公告)号：US6127201A
公开(公告)日：2000-10-03
申请号：US270314
申请日：1999-03-16
申请人： Toyoji Chino , Yasuhito Kumabuchi , Isao Kidoguchi , Hideto Adachi
发明人： Toyoji Chino , Yasuhito Kumabuchi , Isao Kidoguchi , Hideto Adachi
IPC分类号： H01L21/306 , H01L21/473 , H01S5/10 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/323 , H01L21/00
CPC分类号： H01L21/473 , H01L21/30621 , H01S5/227 , H01S5/1064 , H01S5/209 , H01S5/2231 , H01S5/2275 , H01S5/32325 , H01S5/32391 , Y10S438/935
摘要： An etching method for performing dry-etching on a III-V group compound semiconductor or a II-VI group compound semiconductor in a dry-etching apparatus comprising a plasma source for creating a plasma of density of about 10.sup.10 cm.sup.-3 or greater, using a mixed gas containing a gas including a halogen element and a gas including nitrogen. The etching conditions are as follows: (a flow rate of the gas containing said halogen gas)/(a flow rate of said nitrogen gas).gtoreq.1; and an internal pressure during etching reaction is about 1 mTorr or greater.
摘要翻译：一种用于在干蚀刻装置中对III-V族化合物半导体或II-VI族化合物半导体进行干蚀刻的蚀刻方法，该干蚀刻装置包括用于产生密度为约1010cm -3或更大的等离子体的等离子体源，其使用含有包含卤素元素的气体和包含氮气的混合气体。蚀刻条件如下：（含有卤素气体的气体的流量）/（所述氮气的流量）> = 1; 并且蚀刻反应期间的内部压力为约1mTorr或更大。

64. 发明授权

US06118800A Semiconductor laser and cleaving method 失效
标题翻译：半导体激光和切割方法
公开(公告)号：US06118800A
公开(公告)日：2000-09-12
申请号：US945770
申请日：1997-12-19
申请人： Isao Kidoguchi , Hideto Adachi , Yasuhito Kumabuchi
发明人： Isao Kidoguchi , Hideto Adachi , Yasuhito Kumabuchi
IPC分类号： H01S5/02 , H01S5/065 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/0202 , H01S5/0658
摘要： In a semiconductor laser having an active layer and a cladding structure interposing the active layer, the cladding structure includes a saturable absorbing layer, and the saturable absorbing layer is formed of InGaAsP.
摘要翻译： PCT No.PCT / JP97 / 00618 Sec。 371 1997年12月19日第 102（e）1997年12月19日日期PCT 1997年2月28日提交PCT公布。公开号WO97 / 32376 日期1997年9月4日在具有有源层和包层结构的半导体激光器中插入有源层，包层结构包括可饱和吸收层，可饱和吸收层由InGaAsP形成。

65. 发明授权

US6072762A Optical disk recording/reproducing method and apparatus for preventing wave length shift during recording and reproducing operations 失效
标题翻译：用于在记录和再现操作期间防止波长偏移的光盘记录/再现方法和装置
公开(公告)号：US6072762A
公开(公告)日：2000-06-06
申请号：US289984
申请日：1999-04-13
申请人： Masahiro Kume , Yuzaburo Ban , Isao Kidoguchi , Satoshi Kamiyama , Ayumu Tsujimura , Akihiko Ishibashi , Yoshiaki Hasegawa , Ryoko Miyanaga
发明人： Masahiro Kume , Yuzaburo Ban , Isao Kidoguchi , Satoshi Kamiyama , Ayumu Tsujimura , Akihiko Ishibashi , Yoshiaki Hasegawa , Ryoko Miyanaga
IPC分类号： G11B7/005 , G11B7/125 , G11B7/135 , G11B11/105
CPC分类号： G11B7/126 , G11B11/10515 , G11B11/10543 , G11B7/005 , G11B7/128 , G11B7/1369 , G11B7/135
摘要： Between a semiconductor laser diode and an optical disk, a collimator lens for collimating a laser beam output from the semiconductor laser diode, a liquid crystal optical shutter for attenuating the collimated beam having passed through the collimator lens, and a beam splitter for splitting reflected light from the optical disk are disposed. In addition, a collective lens for collecting the collimated beam obtained by the collimator lens on a data holding surface of the optical disk is further disposed.
摘要翻译：在半导体激光二极管和光盘之间，用于准直半导体激光二极管输出的激光束的准直透镜，用于衰减通过准直透镜的准直光束的液晶光学快门，以及用于分离反射光的分束器从光盘配置。此外，还设置有用于收集由准直透镜获得的准直光束在光盘的数据保持表面上的集体透镜。

66. 发明授权

US5923690A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5923690A
公开(公告)日：1999-07-13
申请号：US788511
申请日：1997-01-24
申请人： Masahiro Kume , Yuuzaburou Ban , Akihiko Ishibashi , Nobuyuki Uemura , Hidemi Takeisi , Isao Kidoguchi
发明人： Masahiro Kume , Yuuzaburou Ban , Akihiko Ishibashi , Nobuyuki Uemura , Hidemi Takeisi , Isao Kidoguchi
IPC分类号： H01S5/028 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32341 , H01S5/028
摘要： A gallium nitride group compound semiconductor laser device of the present invention includes: a substrate; and a layered structure provided on the substrate, wherein the layered structure includes an In.sub.z Ga.sub.1-z N active layer (0.ltoreq.z.ltoreq.1) which is formed at least in a first region, an n-type Al.sub.x Ga.sub.1-x N cladding layer (0.ltoreq.x.ltoreq.1) and a p-type Al.sub.y Ga.sub.1-y N cladding layer (0.ltoreq.y.ltoreq.1) interposing the active layer therebetween, and a current-defining structure made of Al.sub.u Ga.sub.1-u N (0.ltoreq.u.ltoreq.1) having an opening corresponding to the first region for defining a current within the first region.
摘要翻译：本发明的氮化镓族化合物半导体激光装置包括：基板; 以及设置在所述基板上的分层结构，其中，所述层叠结构包括至少形成在第一区域中的n型Al x Ga 1-x N包层的InzGa1-zN有源层（0≤z≤1）（0≤x≤1）和介于其间的有源层的p型Al y Ga 1-y N包覆层（0≤y≤1）和由AluGa1-uN（具有对应于第一区域的开口，用于限定第一区域内的电流。

67. 发明授权

US5751013A Semiconductor light-emitting device and production method thereof 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US5751013A
公开(公告)日：1998-05-12
申请号：US619483
申请日：1996-03-21
申请人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
发明人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
IPC分类号： H01L33/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/36 , H01L33/64 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/042 , H01S5/16 , H01S5/20 , H01S5/223 , H01S5/30 , H01S5/323 , H01S5/327 , H01S3/19
CPC分类号： H01L33/642 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L33/007 , H01L33/025 , H01L33/32 , H01L33/325 , H01S5/2231 , H01S5/305 , H01S5/32341 , H01S5/327 , H01L2224/73204 , H01L2224/83192 , H01L2933/0075 , H01S5/0213 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/0422 , H01S5/162 , H01S5/2059 , H01S5/2063 , H01S5/3063 , H01S5/3086
摘要： A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
摘要翻译： PCT No.PCT / JP95 / 01447 Sec。 371日期1996年3月21日 102（e）1996年3月21日PCT PCT 1995年7月20日PCT公布。出版物WO96 / 03776 日期：1996年2月8日具有双异质结构的半导体发光器件包括：掺杂有p型杂质的Ga1-xInxN（0≤x≤0.3）构成的有源层，n型不纯; 以及设置成夹持有源层的第一和第二覆层。

68. 发明授权

US5144633A Semiconductor laser and manufacturing method thereof 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5144633A
公开(公告)日：1992-09-01
申请号：US704969
申请日：1991-05-23
申请人： Kiyoshi Ohnaka , Yuzaburo Ban , Isao Kidoguchi
发明人： Kiyoshi Ohnaka , Yuzaburo Ban , Isao Kidoguchi
IPC分类号： H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/2059 , H01S5/2205 , H01S5/32325
摘要： A hetero structure semiconductor laser of inner stripe type comprises an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P first cladding layer of a first conductivity type, a Ga.sub.0.5 In.sub.0.5 P or (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P active layer, an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P second cladding layer of a second conductivity type different from the first conductivity type, an AlInP or (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P confinement layer or a SiO.sub.2 having a stripe-like opening and having a refractive index lower than that of the first cladding layer, and an upper cladding layer having a band gap larger than that of the first cladding layer having a refractive index lower than that of the second cladding layer are formed successively on a GaAs substrate. Further, the width of the active layer may be narrowed as a stripe-like structure. Thus, astigmatism of a semiconductor laser becomes smaller and the threshold value of laser action becomes smaller. The manufacturing methods of such a semiconductor laser are also disclosed.
摘要翻译：内条型的异质结构半导体激光器包括第一导电类型的（Al x Ga 1-x）0.5 In 0.5 P第一包层，Ga 0.5 In 0.5 P或（Al x Ga 1-x）0.5 In 0.5 P活性层，（ Al x Ga 1-x）0.5 In 0.5 P第二导电类型的不同于第一导电类型的第二包层，AlInP或（Al x Ga 1-x）0.5 In 0.5 P限制层或具有条状开口并具有折射率指数低于第一包覆层的折射率，并且在GaAs衬底上依次形成具有比第二包覆层的折射率低的第一包层的带隙大的带隙的上包层。此外，活性层的宽度可以变窄为条状结构。因此，半导体激光器的像散变小，激光作用的阈值变小。还公开了这种半导体激光器的制造方法。

69. 发明授权

US08198637B2 Nitride semiconductor laser and method for fabricating the same 失效
标题翻译：氮化物半导体激光器及其制造方法
公开(公告)号：US08198637B2
公开(公告)日：2012-06-12
申请号：US11872071
申请日：2007-10-15
申请人： Gaku Sugahara , Yasutoshi Kawaguchi , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
发明人： Gaku Sugahara , Yasutoshi Kawaguchi , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
IPC分类号： H01L27/15
CPC分类号： H01S5/227 , H01S5/0202 , H01S5/0421 , H01S5/2205 , H01S5/32341
摘要： A semiconductor laser includes a nitride semiconductor substrate with a striped raised portion that extends in a resonant cavity length direction, a masking layer, which has been defined on the principal surface of the nitride semiconductor substrate and which has a striped opening in a selected area on the upper surface of the striped raised portion, and a nitride semiconductor multilayer structure, which has been grown on the selected area on the upper surface of the striped raised portion. The nitride semiconductor multilayer structure is thicker than nitride semiconductors on the masking layer, and the nitride semiconductor multilayer structure is broader in width than the striped opening of the masking layer and includes portions that have grown laterally onto the masking layer.
摘要翻译：半导体激光器包括具有在共振腔长度方向上延伸的条纹凸起部分的氮化物半导体衬底，已经限定在氮化物半导体衬底的主表面上并且在选定区域中具有条纹开口的掩模层条状隆起部分的上表面和氮化物半导体多层结构，其已经在条纹凸起部分的上表面上的选定区域上生长。氮化物半导体多层结构比掩模层上的氮化物半导体更厚，并且氮化物半导体多层结构的宽度比掩蔽层的条纹开口宽，并且包括在掩模层上横向生长的部分。

70. 发明申请

US20110286487A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20110286487A1
公开(公告)日：2011-11-24
申请号：US13109512
申请日：2011-05-17
申请人： Hitoshi Sato , Toru Takayama , Atsushi Higuchi , Masatoshi Sasaki , Isao Kidoguchi
发明人： Hitoshi Sato , Toru Takayama , Atsushi Higuchi , Masatoshi Sasaki , Isao Kidoguchi
IPC分类号： H01S5/343
CPC分类号： H01S5/3211 , B82Y20/00 , H01S5/0421 , H01S5/2009 , H01S5/22 , H01S5/3202 , H01S5/34326 , H01S5/34333 , H01S5/3436
摘要： A semiconductor laser device includes, on an n-type GaAs substrate, an n-type GaAs contact layer, an n-type first quantum well heterobarrier layer, an n-type AlGaInP cladding layer, a strained quantum well active layer (a first guide layer, GaInP well layers, AlGaInP barrier layers, and a second guide layer), a p-type AlGaInP cladding layer, a p-type GaInP intermediate layer, and a p-type GaAs contact layer, which are formed in this stated order. The semiconductor laser device can perform high-temperature and high-power operation at a lower operating voltage.
摘要翻译：半导体激光装置在n型GaAs衬底上包括n型GaAs接触层，n型第一量子阱异质势垒层，n型AlGaInP包覆层，应变量子阱活性层（第一导体层，GaInP阱层，AlGaInP阻挡层和第二引导层），以该顺序形成的p型AlGaInP包层，p型GaInP中间层和p型GaAs接触层。半导体激光器件可以在较低的工作电压下进行高温和大功率的操作。

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