专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US06962890B2 Olefin polymerization catalyst and process for olefin polymerization using the olefin polymerization catalyst 有权
标题翻译：烯烃聚合催化剂和使用烯烃聚合催化剂的烯烃聚合方法
公开(公告)号：US06962890B2
公开(公告)日：2005-11-08
申请号：US10127720
申请日：2002-04-23
申请人： Naoto Matsukawa , Kazutaka Tsuru , Masatoshi Nitabaru , Junji Saito , Tetsuhiro Matsumoto
发明人： Naoto Matsukawa , Kazutaka Tsuru , Masatoshi Nitabaru , Junji Saito , Tetsuhiro Matsumoto
IPC分类号： C08F4/42 , C08F4/642 , C08F10/02 , C08F110/02 , B01J31/38 , C08F4/72
CPC分类号： C08F10/02 , C08F110/02 , C08F4/659 , C08F4/64048 , C08F2500/17 , C08F4/64051 , C08F4/64044 , C08F4/64041
摘要： An olefin polymerization catalyst having a high polymerization activity at high temperatures and a process for olefin polymerization using the catalyst are disclosed. The olefin polymerization catalyst comprises a transition metal compound which is represented by the following formula (I) and in which the net charge parameter of the central metal is not more than 2.00: wherein M is a transition metal atom of Group 4 to Group 5 of the periodic table, m is an integer of 1 to 5, Q is —N═ or —C(R2)═, A is —O—, —S—, —Se— or —N(R5)—, R1 is an aliphatic hydrocarbon group or an alicyclic hydrocarbon group, R2 to R5 are each a hydrogen atom, a hydrocarbon group, an oxygen-containing group or the like, n is a number satisfying a valence of M, and X is a hydrogen atom, a halogen atom, a hydrocarbon group or the like.
摘要翻译：公开了一种在高温下具有高聚合活性的烯烃聚合催化剂和使用该催化剂的烯烃聚合方法。烯烃聚合催化剂包括由下式（I）表示的过渡金属化合物，其中中心金属的净电荷参数不大于2.00：其中M是第4族至第5族的过渡金属原子元素周期表，m为1至5的整数，Q为-N-或-C（R 2） - ，A为-O - ， - S - ， - S - 或-N （R 5） - ，R 1是脂族烃基或脂环族烃基，R 2至R 5， SUP>各自为氢原子，烃基，含氧基等，n为满足M价的数，X为氢原子，卤素原子，烃基等。

62. 发明申请

US20050124771A1 Olefin polymerization catalysts, transition metal compounds, processes for olefin polymerization, and alpha-olefin/conjugated diene copolymers 有权
标题翻译：烯烃聚合催化剂，过渡金属化合物，烯烃聚合方法和α-烯烃/共轭二烯共聚物
公开(公告)号：US20050124771A1
公开(公告)日：2005-06-09
申请号：US11028923
申请日：2005-01-05
申请人： Terunori Fujita , Yasushi Tohi , Makoto Mitani , Shigekazu Matsui , Junji Saito , Masatoshi Nitabaru , Kiyoaki Sugi , Haruyuki Makio , Toshiyuki Tsutsui
发明人： Terunori Fujita , Yasushi Tohi , Makoto Mitani , Shigekazu Matsui , Junji Saito , Masatoshi Nitabaru , Kiyoaki Sugi , Haruyuki Makio , Toshiyuki Tsutsui
IPC分类号： C08F210/04 , C07F7/00 , C07F7/08 , C07F9/00 , C08F4/602 , C08F110/02 , C08F110/06 , C08F210/02 , C08F210/12 , C08F210/16 , C08F4/44
CPC分类号： C08F210/02 , C07F7/003 , C07F7/0803 , C07F9/005 , C08F10/00 , C08F110/02 , C08F110/06 , C08F210/16 , C08F2500/17 , C08F2500/01 , C08F2500/03 , C08F236/06 , C08F210/06 , C08F4/64189 , C08F4/64048 , C08F4/7022 , C08F4/6812
摘要： The invention provides a process using olefin polymerization catalysts exhibiting excellent polymerization activities. The olefin polymerization catalysts of the invention contain a transition metal compound of and at least one of an organometallic compound, an organoaluminum oxy-compound or a compound which reacts with said transition metal compound to form an ion pair. The process using the inventive catalysts is useful in producing α-olefin/conjugated diene copolymers having specific properties.
摘要翻译：本发明提供一种使用显示优异聚合活性的烯烃聚合催化剂的方法。本发明的烯烃聚合催化剂含有有机金属化合物，有机铝氧化合物或与所述过渡金属化合物反应形成离子对的化合物中的至少一种的过渡金属化合物。使用本发明催化剂的方法可用于制备具有特定性质的α-烯烃/共轭二烯共聚物。

63. 发明授权

US06875718B2 Olefin polymerization catalysts, transition metal compounds, processes for olefin polymerization, and α-olefin/conjugated diene copolymers 有权
标题翻译：烯烃聚合催化剂，过渡金属化合物，烯烃聚合方法和α-烯烃/共轭二烯共聚物
公开(公告)号：US06875718B2
公开(公告)日：2005-04-05
申请号：US09942706
申请日：2001-08-31
申请人： Terunori Fujita , Yasushi Tohi , Makoto Mitani , Shigekazu Matsui , Junji Saito , Masatoshi Nitabaru , Kiyoaki Sugi , Haruyuki Makio , Toshiyuki Tsutsui
发明人： Terunori Fujita , Yasushi Tohi , Makoto Mitani , Shigekazu Matsui , Junji Saito , Masatoshi Nitabaru , Kiyoaki Sugi , Haruyuki Makio , Toshiyuki Tsutsui
IPC分类号： C08F210/04 , C07F7/00 , C07F7/08 , C07F9/00 , C08F4/602 , C08F110/02 , C08F110/06 , C08F210/02 , C08F210/12 , C08F210/16 , B01J31/00 , B01J37/00 , C08F4/02 , C08F4/60 , C08F4/44
CPC分类号： C08F210/02 , C07F7/003 , C07F7/0803 , C07F9/005 , C08F10/00 , C08F110/02 , C08F110/06 , C08F210/16 , C08F2500/17 , C08F2500/01 , C08F2500/03 , C08F236/06 , C08F210/06 , C08F4/64189 , C08F4/64048 , C08F4/7022 , C08F4/6812
摘要： The invention provides olefin polymerization catalysts exhibiting excellent polymerization activities, a process for olefin polymerization using the catalysts, a novel transition metal compound useful for the catalysts, and α-olefin/conjugated diene copolymers having specific properties. The olefin polymerization catalysts of the invention contain (A) a transition metal compound of formula (I), and (B) an organometallic compound, an organoaluminum oxy-compound or an ionizing ionic compound. The novel transition metal compounds of the invention are compounds of formula (I) wherein M is a transition metal atom of Group 3 or 4 of the periodic table; R1 is a hydrocarbon group, etc.; R2 to R5 are each H, a halogen, a hydrocarbon group, etc.; R6 is a halogen, a hydrocarbon group, etc.; n is a number satisfying a valence of M; and X is a halogen, a hydrocarbon group, etc
摘要翻译：本发明提供了表现出优异聚合活性的烯烃聚合催化剂，使用该催化剂的烯烃聚合方法，用于该催化剂的新型过渡金属化合物和具有特定性质的α-烯烃/共轭二烯共聚物。本发明的烯烃聚合催化剂含有（A）式（I）的过渡金属化合物和（B）有机金属化合物，有机铝氧化合物或离子化离子化合物。本发明的新型过渡金属化合物是式（I）的化合物，其中M是周期表第3或4族的过渡金属原子; R 1是烃基等; R 2〜R 5各自为H，卤素，烃基等; R 6是卤素，烃基等; n是满足M价的数; X为卤素，烃基等

64. 发明授权

US5772757A Apparatus and method for growing semiconductor crystal 失效
标题翻译：用于生长半导体晶体的装置和方法
公开(公告)号：US5772757A
公开(公告)日：1998-06-30
申请号：US475170
申请日：1995-06-07
申请人： Junji Saito
发明人： Junji Saito
IPC分类号： C30B23/08 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/203
CPC分类号： C23C16/4551 , C23C16/4401 , C23C16/45561 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/45574 , C30B25/02 , C30B25/14 , C30B29/40
摘要： The present invention relates to molecr beam epitaxy, in particular, to a gas source molecular beam epitaxy apparatus using compound gases as sources of semiconductor component elements, and also relates to a method for growing semiconductor crystal using this apparatus. It is an object of the present invention to prevent an epitaxial layer from being contaminated with organic compounds produced by decomposition of source gases. It is another object to grow a high purity semiconductor crystal at a growth rate high enough for practical applications. To achieve the above objects, in a growth apparatus in accordance with the present invention, the ambient gas pressure is maintained at the order of 10.sup.-5 -10.sup.-3 Torr during a growing process. The distance between a substrate on which semiconductor is to be grown and a gas effusion cell made shorter than the mean free path of source gases and by-products produced by decomposition of the source gases, wherein the mean free path is determined from the above ambient gas pressure. Moreover, a heat insulation plate is provided between the gas effusion cell and the substrate, wherein the heat insulation plate has apertures corresponding to gas effusion cells. Furthermore, as source gases, amino compounds are used such as trimethyl amine galane ((CH.sub.3).sub.3 N.multidot.GaH.sub.3), triethyl amine alane ((C.sub.2 H.sub.5).sub.3 N), tris-dimethylamino arsine (As(N(CH.sub.3).sub.2).sub.3), trimethyl amine ilane ((CH.sub.3).sub.3 N.multidot.InH.sub.3), and tris-diethylamino phosphine (P(N(C.sub.2 H.sub.5).sub.2).sub.3), wherein the amino compounds include elements composing compound semiconductor such as GaAs and InP.
摘要翻译：本发明涉及分子束外延，特别涉及使用复合气体作为半导体元件元件的源的气体源分子束外延装置，还涉及使用该装置生长半导体晶体的方法。本发明的目的是防止外延层被源气体分解产生的有机化合物污染。另一个目的是以实际应用足够高的生长速度生长高纯度半导体晶体。为了实现上述目的，在根据本发明的生长装置中，环境气体压力在生长过程中维持在10-5-10-3乇的数量级。在其上生长半导体的基板与比原始气体的平均自由程和源气体分解产生的副产物短的气体注入单元之间的距离，其中平均自由程是根据上述环境气压。此外，在气体注入单元和基板之间设置绝热板，其中隔热板具有对应于气体积聚单元的孔。此外，作为源气体，使用氨基化合物，例如三甲基胺加仑（（CH 3）3 N x GaH 3），三乙胺烷（（C 2 H 5）3 N），三 - 二甲基氨基胂（As（N（CH 3）2）3），三甲胺（（CH 3）3 N x InH 3）和三 - 二乙基氨基膦（P（N（C 2 H 5）2）3），其中氨基化合物包括构成化合物半导体如GaAs和InP的元素。

65. 发明授权

US5767033A Transition metal compound and olefin polymerization catalyst component comprising said compound 失效
标题翻译：包含所述化合物的过渡金属化合物和烯烃聚合催化剂组分
公开(公告)号：US5767033A
公开(公告)日：1998-06-16
申请号：US752140
申请日：1996-11-18
申请人： Junichi Imuta , Junji Saito , Takashi Ueda , Yoshihisa Kiso , Akira Mizuno , Masaaki Kawasaki
发明人： Junichi Imuta , Junji Saito , Takashi Ueda , Yoshihisa Kiso , Akira Mizuno , Masaaki Kawasaki
IPC分类号： C07F17/00 , C08F4/602 , C08F4/639 , C08F4/6392 , C08F4/64 , C08F4/659 , C08F10/00 , C08F10/06 , C08F110/06 , C08F210/06
CPC分类号： C08F210/06 , C07F17/00 , C08F10/00 , C08F10/06 , C08F110/06 , C08F4/63908 , C08F4/63912 , C08F4/63916 , C08F4/63927 , C08F4/65908 , C08F4/65912 , C08F4/65916 , Y10S526/943
摘要： The novel transition metal compound of the invention is represented by the following formula: ##STR1## wherein R.sup.1 and R.sup.2 are each a hydrogen atom or a hydrocarbon group of 1 to 3 carbon atoms; X.sup.1 and X.sup.2 are each a halogen atom; and Y is a divalent silicon-containing group selected from the group consisting of dimethylsilylene, diphenylsilylene and methylphenylsilylene. The transition metal compound is useful for an olefin polymerization catalyst with which a propylene (co)polymer having specific structure is prepared.
摘要翻译：本发明的新型过渡金属化合物由下式表示：其中R 1和R 2各自为氢原子或1〜3个碳原子的烃基; X1和X2各自为卤素原子; Y是选自二甲基亚甲硅基，二苯基亚甲硅基和甲基苯基亚甲基的二价含硅基团。过渡金属化合物可用于制备具有特定结构的丙烯（共）聚合物的烯烃聚合催化剂。

66. 发明授权

US5762706A Method of forming compound semiconductor device 失效
标题翻译：形成化合物半导体器件的方法
公开(公告)号：US5762706A
公开(公告)日：1998-06-09
申请号：US337829
申请日：1994-11-08
申请人： Junji Saito , Toshihide Kikkawa , Hirosato Ochimizu
发明人： Junji Saito , Toshihide Kikkawa , Hirosato Ochimizu
IPC分类号： C30B25/02 , H01L21/20 , H01L21/203 , H01L21/285 , H01L21/335 , C30B23/02
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02392 , H01L21/02395 , H01L21/02433 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L21/28575 , H01L21/28587 , H01L29/66462 , Y10S438/973
摘要： The present invention includes a process of growing a compound semiconductor layer locally, after applying radical particles that do not become an etchant of a compound semiconductor layer to an insulating mask so as to terminate the surface of the insulating mask in a state that the compound semiconductor layer is covered with the insulating mask, on the surface of the compound semiconductor layer exposed from the insulating mask.
摘要翻译：本发明包括在将化合物半导体层不成为蚀刻剂的自由基粒子施加到绝缘掩模之后局部生长化合物半导体层的方法，以便在化合物半导体的状态下终止绝缘掩模的表面在由绝缘掩模露出的化合物半导体层的表面上用绝缘掩模覆盖层。

67. 发明授权

US5739366A Transition metal compound containing substituted indenyl rings 失效
标题翻译：含有取代茚基环的过渡金属化合物
公开(公告)号：US5739366A
公开(公告)日：1998-04-14
申请号：US479606
申请日：1995-06-07
申请人： Junichi Imuta , Junji Saito , Takashi Ueda , Yoshihisa Kiso , Akira Mizuno , Masaaki Kawasaki
发明人： Junichi Imuta , Junji Saito , Takashi Ueda , Yoshihisa Kiso , Akira Mizuno , Masaaki Kawasaki
IPC分类号： C07F17/00 , C08F4/602 , C08F4/639 , C08F4/6392 , C08F4/64 , C08F4/659 , C08F10/00 , C08F10/06 , C08F110/06 , C08F210/06 , C07F7/00
CPC分类号： C08F210/06 , C07F17/00 , C08F10/00 , C08F10/06 , C08F110/06 , C08F4/63908 , C08F4/63912 , C08F4/63916 , C08F4/63927 , C08F4/65908 , C08F4/65912 , C08F4/65916 , Y10S526/943
摘要： The novel transition metal compound of the invention is represented by the following formula (I): ##STR1## wherein M is a transition metal; R.sup.1 and R.sup.2 are each a hydrogen atom, a hydrocarbon group or the like; R.sup.3 is an alkyl group of 2 to 20 carbon atoms; R.sup.4 is an alkyl group of 2 to 20 carbon atoms; X.sup.1 and X.sup.2 are each a halogen atom or the like; and Y is a divalent hydrocarbon group, a divalent silicon-containing group or the like. The transition metal compound is useful for an olefin polymerization catalyst with which a propylene (co)polymer having specific structure is prepared.
摘要翻译：本发明的新型过渡金属化合物由下式（I）表示：R 2各自为氢原子，烃基等; R3是2〜20个碳原子的烷基; R4是2〜20个碳原子的烷基; X1和X2各自为卤素原子等; Y为二价烃基，二价含硅基团等。过渡金属化合物可用于制备具有特定结构的丙烯（共）聚合物的烯烃聚合催化剂。

68. 发明授权

US5710223A Process for polymerizing propylene by using a novel metallocene catalyst 失效
标题翻译：通过使用新的茂金属催化剂聚合丙烯的方法
公开(公告)号：US5710223A
公开(公告)日：1998-01-20
申请号：US719540
申请日：1996-09-25
申请人： Daisuke Fukuoka , Takashi Tashiro , Koji Kawaai , Junji Saito , Takashi Ueda , Yoshihisa Kiso , Junichi Imuta , Terunori Fujita , Masatoshi Nitabaru , Masayasu Yoshida
发明人： Daisuke Fukuoka , Takashi Tashiro , Koji Kawaai , Junji Saito , Takashi Ueda , Yoshihisa Kiso , Junichi Imuta , Terunori Fujita , Masatoshi Nitabaru , Masayasu Yoshida
IPC分类号： C07C45/46 , C07C49/67 , C07C49/697 , C07F17/00 , C08F4/60 , C08F4/602 , C08F4/619 , C08F4/6192 , C08F4/64 , C08F4/642 , C08F4/659 , C08F4/6592 , C08F10/00 , C08F10/06 , C08F110/06 , C08F210/06 , C08F210/16
CPC分类号： C08F210/16 , C07C45/46 , C07C49/67 , C07C49/697 , C07F17/00 , C08F10/00 , C08F10/06 , C08F110/06 , C08F210/06 , C08F4/61912 , C08F4/61927 , C08F4/65908 , C08F4/65912 , C08F4/65916 , C08F4/65927 , Y10S526/904 , Y10S526/943
摘要： A process for polymerizing propylene utilizes a metallocene catalyst component of the formula (I) ##STR1## wherein M is a transition metal, R.sup.1 is a C.sub.2-6 hydrocarbon, R.sup.2 is a C.sub.6-16 aryl group, X.sup.1 and X.sup.2 are each a halogen atom and Y is a divalent hydrocarbon or a divalent silicon-containing group. Propylene polymers produced thereby have such properties that the triad tacticity of propylene units is high, the proportion of inversely inserted units based on the 2,1-insertion of propylene monomer is in a specific range and the intrinsic viscosity (.eta.), as measured in decahydronaphthalene at 135.degree. C., is in a specific range.
摘要翻译：聚合丙烯的方法使用式（I）的茂金属催化剂组分是C 2-6烃，R 2是C 6-16芳基，X 1和X 2各自是卤素原子，Y是二价烃或二价硅包含组。所生产的丙烯聚合物具有丙烯单元的三单元立构规整度高的性质，基于丙烯单体的2,1-插入的反向插入单元的比例在特定范围内，特性粘度（η）如十氢萘在135℃处于特定范围内。

69. 发明授权

US5458689A Apparatus and method for growing semiconductor crystal 失效
标题翻译：用于生长半导体晶体的装置和方法
公开(公告)号：US5458689A
公开(公告)日：1995-10-17
申请号：US384389
申请日：1995-02-03
申请人： Junji Saito
发明人： Junji Saito
IPC分类号： C30B23/08 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/203 , C23C16/00
CPC分类号： C23C16/4551 , C23C16/4401 , C23C16/45561 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/45574 , C30B25/02 , C30B25/14 , C30B29/40
摘要： The present invention relates to molecr beam epitaxy, in particular, to a gas source molecular beam epitaxy apparatus using compound gases as sources of semiconductor component elements, and also relates to a method for growing semiconductor crystal using this apparatus. It is an object of the present invention to prevent an epitaxial layer from being contaminated with organic compounds produced by decomposition of source gases. It is another object to grow a high purity semiconductor crystal at a growth rate high enough for practical applications. To achieve the above objects, in a growth apparatus in accordance with the present invention, the ambient gas pressure is maintained at the order of 10.sup.-5 -10.sup.-3 Torr during a growing process. The distance between a substrate on which semiconductor is to be grown and a gas effusion cell made shorter than the mean free path of source gases and by-products produced by decomposition of the source gases, wherein the mean free path is determined from the above ambient gas pressure. Moreover, a heat insulation plate is provided between the gas effusion cell and the substrate, wherein the heat insulation plate has apertures corresponding to gas effusion cells. Furthermore, as source gases, amino compounds are used such as trimethyl amine galane ((CH.sub.3).sub.3 N.GaH.sub.3), triethyl amine alane ((C.sub.2 H.sub.5).sub.3 N) , tris-dimethylamino arsine (As (N (CH.sub.3).sub.2).sub.3) , trimethyl amine ilane ((CH.sub.3).sub.3 N.InH.sub.3), and tris-diethylamino phosphine (P (N (C.sub.2 H.sub.5).sub.2).sub.3) , wherein the amino compounds include elements composing compound semiconductor such as GaAs and InP.
摘要翻译：本发明涉及分子束外延，特别涉及使用复合气体作为半导体元件元件的源的气体源分子束外延装置，还涉及使用该装置生长半导体晶体的方法。本发明的目的是防止外延层被源气体分解产生的有机化合物污染。另一个目的是以实际应用足够高的生长速度生长高纯度半导体晶体。为了实现上述目的，在根据本发明的生长装置中，环境气体压力在生长过程中维持在10-5-10-3乇的数量级。在其上生长半导体的基板与比原始气体的平均自由程和源气体分解产生的副产物短的气体注入单元之间的距离，其中平均自由程是根据上述环境气压。此外，在气体注入单元和基板之间设置绝热板，其中隔热板具有对应于气体积聚单元的孔。此外，作为源气体，使用氨基化合物，例如三甲基胺加仑（（CH 3）3 N·GaH 3），三乙基胺甲烷（（C 2 H 5）3 N），三 - 二甲基氨基胂（As（N（CH 3）2）3）（（CH 3）3 N·InH 3）和三 - 二乙基氨基膦（P（N（C 2 H 5）2）3），其中氨基化合物包括构成化合物半导体如GaAs和InP的元素。

70. 发明授权

US4505866A Process for producing a boehmite shaped product and a burned boehmite shaped product 失效
标题翻译：勃姆石成形品和烧成勃姆石成形品的制造方法
公开(公告)号：US4505866A
公开(公告)日：1985-03-19
申请号：US466576
申请日：1983-02-15
申请人： Yasuo Oguri , Junji Saito , Naoto Kijima
发明人： Yasuo Oguri , Junji Saito , Naoto Kijima
IPC分类号： C01F7/02 , C01F7/44 , C04B35/10 , C04B38/00 , C04B35/52
CPC分类号： C04B38/00 , C01F7/02 , C01F7/448 , C04B35/10 , C01P2002/82 , C01P2004/03 , C01P2004/61
摘要： A process for producing a boehmite shaped product comprises slurrying a mixture of a gibbsite powder and at least one powder selected from the group consisting of powders of pseudo-boehmite, amorphous aluminum hydroxide, alumina cement and .rho.-alumina, molding the slurry thereby obtained and subjecting the molded product to hydrothermal treatment.
摘要翻译：一种勃姆石成形品的制造方法包括将三水铝矿粉末和选自假勃姆石，无定形氢氧化铝，氧化铝水泥，粗铝氧化物粉末的粉末中的至少一种粉末混合，对成型体进行水热处理。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式