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61. 发明专利

JPH1190655A FRICTION STIRRING JOINING METHOD 失效
公开(公告)号：JPH1190655A
公开(公告)日：1999-04-06
申请号：JP2298898
申请日：1998-02-04
申请人： HITACHI LTD
发明人： SATO AKIHIRO , ESUMI MASAKUNI , ISHIMARU YASUO , OKAMURA HISANOBU , AOTA KINYA
IPC分类号： B61D17/00 , B23K20/12 , B23K33/00 , B23K37/08 , B23K103/10 , B23P23/00 , B23Q3/155 , B23Q3/157 , B61D17/04
摘要： PROBLEM TO BE SOLVED: To prevent the generation of a recess in a joined part in the friction stirring joining by rotating a rotary body. SOLUTION: End parts of a joined part of hollow-shaped materials 50, 60 are provided with thick-walled pats 56, 66 projecting outward. Two thick-walled parts 56, 66 are butted to each other to form a trapezoidal shape. Rotary bodies 70, 70 are inserted in the thick-walled parts 56, 66 and rotated to be joined with each other. The rotary bodies are rotated in a condition where a large diameter part 71 of the rotary bodies 70, 70 is positioned at the outward from the extension line of the outer surface of plates 51, 52, 61, 62 of a general part. The desired joining can be made even when there is a gap between two thick- walled parts 56, 66. After the joining, the thick-walled parts 56, 66 are cut to make them smooth.

62. 发明专利

JPH1182379A MANUFACTURE OF IMPELLER FOR ELECTRIC VACUUM CLEANER 失效
公开(公告)号：JPH1182379A
公开(公告)日：1999-03-26
申请号：JP24645397
申请日：1997-09-11
申请人： HITACHI LTD
发明人： NAKAMURA KIYOMI , OBANA TAKESHI , INAGAKI MASATOSHI , AONO YASUHISA , OKAMURA HISANOBU
IPC分类号： A47L9/00 , F04D29/28
摘要： PROBLEM TO BE SOLVED: To lower the power loss and noise while eliminating projections generated by caulking by connecting blades to each other with brazing in an impeller having a plurality of blades fitted to a rotary shaft of an electric motor and spirally arranged between a front and a rear plates. SOLUTION: An electric blower to be built in an electric vacuum cleaner has a front surface plate 402, a rear surface plate 405 and plural spiral blades 403 arranged between both the plates 402, 405, and they are made of aluminum alloy. In this case, each plate 402, 405 is previously formed with a brazing metal layer 406, and the plates 402, 405 formed with the brazing metal layer 406 are arranged concentrically opposite to each other. Each blade 403 is fixed between them by a jig, and while a small pressure is applied to them, and the whole is heated at a desirable temperature equal to the melting starting temperature or less for a desirable time so as to integrally bond the three members of the plates 402, 403 and the blades 405 with brazing using the brazing metal layer 406 as a brazing material.

63. 发明专利

JPH115179A FRICTION WELDING 失效
公开(公告)号：JPH115179A
公开(公告)日：1999-01-12
申请号：JP15474997
申请日：1997-06-12
申请人： HITACHI LTD
发明人： SATO AKIHIRO , FUNYU MASAO , SAKAMOTO MASAHIKO , OKAMURA HISANOBU
IPC分类号： B23K37/06 , B23K20/12 , B23K33/00 , B61D17/00
摘要： PROBLEM TO BE SOLVED: To realize a friction welding method without a generation of unwelded parts by installing a grooved backing plate on the reverse face of a workpiece right under a tool, which is inserted to the welded part of the workpiece and moves while rotating. SOLUTION: A groove 7 made on a backing plate 2 is placed right under a welding face 3 of the workpiece 1, and welding is performed while a tip 4a of a tool 4 is inserted until it penetrates the reverse face of the workpiece 1. In this welding method, a part of the workpiece 1 is plastic flowed to the groove 7 made on the backing plate 2. During the welding processing, since the welding surface is being plastic flowed by the pressure of the tool 4, when the groove 7 is filled with metal, the metal on the welding part surface is decreased to make a concave form. The metal, which is to fill the groove 7, is supplemented by forming a projection 8 on the welding surface in advance. The tip 4a of the tool 4 is preferred to be welded while moving in the groove 7 of the backing plate 2. In this way, the overall of the welding part is fused are eliminates unwelded parts by deleting the backing waves.

64. 发明专利

JPH07201895A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07201895A
公开(公告)日：1995-08-04
申请号：JP33490893
申请日：1993-12-28
申请人： HITACHI LTD
发明人： BABA NOBORU , OKAMURA HISANOBU , SAKAMOTO MASAHIKO , AKIYAMA HIROSHI , SAITO RYUICHI , KOIKE YOSHIHIKO , KITANO MAKOTO
IPC分类号： H01L21/52 , H01L25/07 , H01L25/18
摘要： PURPOSE:To prevent generation of cracks to improve reliability by using a Cu-base alloy showing the hardness under a high temperature which is only a half of that under the room temperature and also showing a very higher softening temperature for a metallic heat radiating plate of the device where a semiconductor element is mounted on an insulating substrate, metallic heat radiating plate and stress alleviating material on a metallic supporting plate of a power control element. CONSTITUTION:An IGBT module is formed by joining eight (8) Mo blocks 4 consisting of Cu-Cr-Zr heat radiating plate 3 in the thickness of 4mm and a heat stress alleviating material with Sn solder including Au of 20%. Eight semiconductor blocks 4 and electrodes of insulating layer through AlO are joined on the blocks 4 and Cu-Cr-Zr heat radiating plate 3 respectively with Sn-5%Sb solder. Moreover, the AlO ceramics of the insulated substrate 2 and a pure Cu supporting plate 1 are joined with Sn-40%Pb solder and thereafter a lead wire 13 is soldered. After an epoxy case 12 is placed thereon, the inside is filled with silicon gel 9. The metallic supporting plate 1 is made of a Cu group alloy which shows the hardness under a high temperature equal to a half of the hardness under the room temperature and also shows the softening temperature of 350 deg.C or more.

65. 发明专利

JPH06236947A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06236947A
公开(公告)日：1994-08-23
申请号：JP2098393
申请日：1993-02-09
申请人： HITACHI LTD
发明人： YASUKAWA AKIO , SAITO RYUICHI , OKAMURA HISANOBU , KOIKE YOSHIHIKO
IPC分类号： H01L23/12 , H01L23/40
摘要： PURPOSE:To prevent a solder layer from being cracked and to prevent a wire from being discontinued by a method wherein the distribution in the horizontal direction of the hardness of a thermal diffusion plate is made low in a chip mounting position and the distribution is made high in its circumference. CONSTITUTION:A plurality of buffer plates 3 are bonded to one thermal diffusion plate 4 by using hard solder 5. After that, a plurality of IGBT chips 1 and a plurality of diode-chips are bonded onto the plurality of buffer plates 3 by high-temperature solder 6, and a thermal diffusion set 7 is formed. The distribution in the horizontal direction of the hardness of the thermal diffusion plate 4 of the thermal diffusion set 7 is made low in a chip mounting position, i.e., in parts corresponding to positions of the buffer plates 3, and the distribution is made high in its circumference. Thereby, when the chips 1 are mounted, a stress exerted on their solder is suppressed, heat generated form the chips 1 is made to escape easily to a base, and it is possible to prevent a defect from being caused by an excessive temperature rise.

66. 发明专利

JPH05175378A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05175378A
公开(公告)日：1993-07-13
申请号：JP34427291
申请日：1991-12-26
申请人： HITACHI LTD
发明人： OKAMURA HISANOBU , SAKAMOTO MASAHIKO , AKIYAMA HIROSHI
IPC分类号： H01L23/373
摘要： PURPOSE:To prevent deformation and breakage when members with different thermal expansion coefficients are bonded by arranging carbon fiber reinforced carbon compound at the specific part on the compound material and a semiconductor device. CONSTITUTION:Tungsten 1 and copper 2 are bonded by arranging CFRC 3 in between. The tungsten 1 is 5mm (thickness)X50mm (width), the copper plate is 20mm (thickness)X50mm (width), the CFRC 3 is 30mm (thickness)X50mm (width) and the orientation direction of the carbon fiber is arranged to be vertical to the bonding plane. A metallized layer 4 is previously formed of paste composition which is silver solder containing titanium of 2vol.% on the bonding plane of the CFRC 3 by being heated in a vacuum furnace. Thus, deformation and breakage of the compound material formed by bonding the members with different thermal expansion coefficients are prevented and the highly reliable compound material is obtained.

67. 发明专利

JPH03276580A SUPERCONDUCTING WIRE, CONNECTION STRUCTURE AND CONNECTING METHOD THEREFOR 失效
公开(公告)号：JPH03276580A
公开(公告)日：1991-12-06
申请号：JP7569790
申请日：1990-03-27
申请人： HITACHI LTD
发明人： KAMOSHITA RIKUO , SATOU CHIE , OKAMURA HISANOBU , AKIYAMA HIROSHI , SAKAMOTO MASAHIKO , SHINOHARA HIDEKI , FUNAMOTO TAKAO
IPC分类号： H01R4/68 , H01B12/02
摘要： PURPOSE:To obtain the stable connection characteristic and high reliability by exposing only part of the outer periphery side sections of superconducting filaments from a stabilizing material at a connection portion. CONSTITUTION:Only part of the outer periphery side sections of superconducting filaments 4 is exposed from a stabilizing material 3 at the end sections of a pair of superconducting wires 1, 2 to be connected in the connection structure of a pair of superconducting wires 1, 2, and the remainder is left buried in the stabilizing material 3. The superconducting filaments 4 can be connected while they are left buried in the stabilizing material 3. The dispersion of the connection characteristic at the connection section of a pair of superconducting wires 1, 2 can be suppressed to the minimum, and the connection section is prevented from being made electromagnetically unstable.

68. 发明专利

JPH02248372A METHOD FOR BONDING MEMBERS HAVING DIFFERENT WETTABILITY WITH BRAZING MATERIAL, ITS BONDED BODY AND ITS BRAZING MATERIAL 失效
公开(公告)号：JPH02248372A
公开(公告)日：1990-10-04
申请号：JP6672489
申请日：1989-03-18
申请人： HITACHI LTD
发明人： SAKAMOTO MASAHIKO , OKAMURA HISANOBU , OKAYAMA AKIRA , FUNAMOTO TAKAO
IPC分类号： B23K1/19 , C04B37/02
摘要： PURPOSE:To closely bond members having different wettability with a brazing material such as a ceramics and a metal by combining two sets of brazing materials having a different melting temp., arranging the mixture between the members and heating the materials. CONSTITUTION:The bonding of the members having different wettability with a brazing material is carried out as follows. Namely, a brazing material which is melted earlier and spread is arranged on the bonding surface of the member having worse wettability with the brazing material, a brazing material which is melted later and spread is arranged on the bonding surface of the member having better wettability with the brazing material, and the brazing materials are heated and melted to bond the members. When a ceramics (having worse wettability with the brazing material) and a metal (having better wettability with the brazing material) are bonded, for example, a brazing material (e.g. Ag-Cu-based one) contg. an active metal (Ti, Zr, etc.) is arranged on the ceramic a brazing material (e.g. Ag-Ca-based and Au-Cu-based ones) which is melted later than the brazing material contg. active metal is arranged on the metal, and the brazing materials are heated and melted in a nonoxidizing atmosphere to bond the ceramics and metal.

69. 发明专利

JPH02153884A METALLIZED TITANIUM NITRIDE AND WELDING METHOD THEREFOR 失效
公开(公告)号：JPH02153884A
公开(公告)日：1990-06-13
申请号：JP30783888
申请日：1988-12-07
申请人： HITACHI LTD
发明人： SHINOHARA HIDEKI , OKAMURA HISANOBU , KAMOSHITA RIKUO , AKIYAMA HIROSHI , SAKAMOTO MASAHIKO , FUNAMOTO TAKAO
IPC分类号： C04B37/00 , C04B41/88
摘要： PURPOSE:To enable electric terminals to be fitted to the part of a conductive titanium nitride by metallizing with a brazing material which is prepared by adding specific amount of at least one of elements of group IVa to an alloy Cu, Ni, Ag, or Cu and Ag or Cu and Ag. CONSTITUTION:Cu, Ni, Ag or an alloy therefrom, containing 0.1 to 30wt.% of at least one selected from Ti, Zr or Hf is brought into contact with the surface of the TiN layer 1 on the base 2. For example, a Ti powder and a eutectic Ag-Cu powder are mixed with an organic binder to prepare a mixed powder paste of 3% Ti content and the paste is coated on the Ti-N layer 1 and dried. Then, the product is heated in a non-oxidative or reductive atmosphere over 780 deg.C to give the Ti-Ag-Cu film alloy for setting electrodes. An electric wire 5 can be brazed to the part using the alloy 4. Thus, Ti in the alloy reacts with TiN to form Ti2N layer and then, the layer of Cu-Ti compound is formed whereby a metallized layer is formed on the surface of the TiN base 2.

70. 发明专利

JPH02125456A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02125456A
公开(公告)日：1990-05-14
申请号：JP27724588
申请日：1988-11-04
申请人： HITACHI LTD
发明人： OKAMURA HISANOBU , KAMOSHITA RIKUO , AKIYAMA HIROSHI , SAKAMOTO MASAHIKO
IPC分类号： H01L23/34 , H01L23/36
摘要： PURPOSE:To connect the metallized part of an AlN ceramic surface to AlN or SiC at a low temperature and to simultaneously conduct in the same process by manufacturing ceramics by previously dividing it into a member having a cooling function for externally dissipating heat from a semiconductor element and a member having a function for sealing the element from the atmosphere, and assembling both the members by a metallic connection. CONSTITUTION:Heat from a LSI element 2 is transferred to a movable fin 4, and externally dissipated through a stationary fin 6 formed on the AlN ceramic cooling board 5 of the same material. On the other hand, a frame 7 for sealing the element 2 from the atmosphere is formed in a gate shape of AlN ceramics, and metallically connected to an AlN ceramic cap 5 and a multilayer circuit board 1. The AlN ceramic cooling board 5 of the frame 7 and the face to be connected to the board 1 are printed with pastelike brazing material. Then, it is superposed on the board 7 integrated with a heat sink fin, and heated to a temperature slightly higher than the melting point of the brazing material in a reduced pressure Ar atmosphere.

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