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    • 61. 发明专利
    • LEAD FRAME FOR SEMICONDUCTOR AND MANUFACTURE THEREOF
    • JPH0258362A
    • 1990-02-27
    • JP20839288
    • 1988-08-24
    • HITACHI LTD
    • KAWAI SUEONISHIMURA ASAOKITANO MAKOTOMIURA HIDEOYAGUCHI AKIHIRO
    • H01L21/56H01L23/28H01L23/50
    • PURPOSE:To make the bore diameter on the semiconductor element mounting side larger than the bore diameter on the side opposite to the semiconductor element mounting side so as to prevent resin charged into the hole from getting out by the steam pressure at the interface between the tab and the resin at the time of solder reflow to prevent reflow cracks by providing roundnesses at the corner on the semiconductor element mounting side of a hole and at the corner on the side opposite to the semiconductor mounting side of a tab peripheral end part. CONSTITUTION:The hole provided in a tab 1 is punched from the side to mount a semiconductor element 2 to the side opposite to the semiconductor mounting side so as to form a round part 5 on the semiconductor mounting side of a hole. Hereby, the resin 3 charged into the hole never gets out of the hole, accordingly reflow crack resistance can be elevated. The number of holes may be provided in optional numbers at need. For this reason, the processes of press processings increases by one, but thinking over that the press processings at lead frame manufacturing are ten-odd processes, the price increase is slight, and as compared with the conventional art of etching, etc., a lead frame which is cheap and stable in shape can be formed.
    • 63. 发明专利
    • RESIN SEALED SEMICONDUCTOR DEVICE
    • JPH01283948A
    • 1989-11-15
    • JP11245588
    • 1988-05-11
    • HITACHI LTD
    • YAGUCHI AKIHIRONISHIMURA ASAOKITANO MAKOTOMIURA HIDEOKAWAI SUEO
    • H01L23/28H01L23/50
    • PURPOSE:To implement a compact configuration, by fixing a plurality of input/ output pins to a substrate so that the pins are vertically arranged in the same pattern as electrodes on the surface of a semiconductor element, and connecting the pins to the electrodes. CONSTITUTION:A plurality of input/output pins 2 are vertically fixed to a substrate 4 with respect to a surface 1a on which electrodes are provided within the projected area of the surface 1a. The surface 1a is the surface of a semiconductor element 1 where the electrodes are provided. The pins are arranged in the same pattern as the electrodes on the surface of the semiconductor element 1. The electrodes on the surface of the semiconductor element 1 are connected to a plurality of the input/output pins 2 through bumps 3 which are formed on the electrodes. Thereafter, the device is sealed with a resin 5. As a result, the outer dimensions become larger than the outer dimensions of the semiconductor element 1 only by the thickness of the thin resin 5 which is formed on a side surface 1b of the semiconductor element. Therefore, the device can be made compact.
    • 64. 发明专利
    • RESIN SEALED SEMICONDUCTOR DEVICE
    • JPH01181450A
    • 1989-07-19
    • JP259888
    • 1988-01-11
    • HITACHI LTD
    • KONO RYUJIKITANO MAKOTONISHIMURA ASAOMIURA HIDEOYAGUCHI AKIHIROKAWAI SUEO
    • H01L23/28H01L23/50
    • PURPOSE:To prevent the generation of resin cracks, by constituting the lower surface of a tab and the lower surface of a device close to an element at the central part of the tab, while constituting them as a curved surface distant from the element, or a synthesized shape of planes, or a synthesized shape of a curved surface and a plane, at the periphery. CONSTITUTION:An element 1 is mounted on a bent tab 3a via an adhesive agent 2. These are sealed with a resin 5, in the lower part of which a bent part 5a is formed. Resin cracks of lower corner part of the tab are generated by large tensile stress of the lower corner parts of the tab caused by the exfoliation of a boundary surface between the lower surface of the tab and the resin, and vapor pressure generating at this part. Since the resin 5 under the lower surface of the tab is bent, according to the same principle as the arch of a dam, the tensile stress generating in the resin 5 caused by a pressure from above is reduced. As a result, the dielectric strength is increased as compared with conventional plane type, and further the expansion of the boundary surface can be restrained, thereby preventing the resin cracks of the boundary surface.
    • 66. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPS6457651A
    • 1989-03-03
    • JP21276387
    • 1987-08-28
    • HITACHI LTD
    • YAGUCHI AKIHIRONISHIMURA ASAOKITANO MAKOTOMIURA HIDEOKAWAI SUEO
    • H01L23/50H01L23/28
    • PURPOSE:To prevent resin crack generating at the time of temperature cycle testing and surface mounting, by bending downward the outer peripheral end- portion of a lead frame tab in the manner in which the tip of the bent part reaches the inner side of the end-portion of semiconductor element mounting part of the tab. CONSTITUTION:A lead frame for semiconductor device is provided with an integrated body of a tab 2 for mounting a semiconductor element 1, and leads 3. Outer peripheral end-portions of the tab 2 are bent downward in the manner in which the tip 9a of the bent part 9 reaches the inner side of the end-portion 2c of a semiconductor element mounting part 11 of the tab 2. The bent part 9 formed on the outer peripheral part of the tab 2 can be arranged on not only two sides parallel to the lead 3 but also four sides of the tab. As a result, the bent part 9 cuts into resin 5, and mechanical coupling force increases. The contact area with resin 5 also increases, so that boundary bonding force increases. Therefore strong coupling between the tab 2 and resin 5 can be obtained, and the generation of exfoliation on a bonding surface can be prevented.
    • 67. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPS63208261A
    • 1988-08-29
    • JP4028787
    • 1987-02-25
    • HITACHI LTD
    • KAWAI SUEONISHIMURA ASAOKITANO MAKOTOTATEMICHI AKIHIROMIURA HIDEO
    • H01L21/52H01L23/50
    • PURPOSE:To prevent the breakdown of a semiconductor element in die bonding or due to temperature history thereafter, by dividing a tab into a peripheral loop part and a central island part, and indirectly mounting the semiconductor element on the island part through a bonding agent. CONSTITUTION:A tab 2 is divided into a peripheral loop part 2b and a central island part 2a. The island part 2a is connected to a part 2c of the loop part 2b so that the island part 2a is supported with the loop part 2b as a unitary body. A semiconductor element 1 is indirectly mounted on the island part 2a through a bonding agent 6. Meanwhile the element 1 is directly mounted on the element mounting surface of the loop part 2b or mounted through a gap part. Since the bonding of the element 1 and the tab 2 is carried out only at a part of the center of the element in this method, the stress yielded in the element is approximately equal to the value, which is yielded at the entire bonding part of the element 1 corresponding to the length of the bonded part. Therefore, cracks are not yielded in the element even if the element has a large size.