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61. 发明专利

JP2010266908A Access method, server and system 审中-公开
标题翻译：访问方法，服务器和系统
公开(公告)号：JP2010266908A
公开(公告)日：2010-11-25
申请号：JP2009115130
申请日：2009-05-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YOSHIDA ISAO , YOSHIDA TAKAHIRO , KAMATA YOSHIE
IPC分类号： G06F21/24
摘要： PROBLEM TO BE SOLVED: To share transmission/reception information even with a specific third party not directly transmitting/receiving the information. SOLUTION: In a method for accessing information in a server connected with a plurality of clients via a network, the server includes: a communication part communicating with the clients via the network; and a control part controlling the communication part. The control part controls access to the information transmitted/received between a first client and a second client to a third client based on indirect sharing authority information including transmitter identification information indicating the first client that is a transmitter of the information, recipient identification information indicating the second client that is a recipient of the information transmitted from the transmitter; third party identification information indicating the third client that is a third party which can access the information to the information transmitted/received between the transmitter and the recipient, and third party access range information indicating a range wherein the third party can access the information. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：甚至在不直接发送/接收信息的特定第三方的情况下共享发送/接收信息。解决方案：在通过网络访问与多个客户端连接的服务器中的信息的方法中，服务器包括：经由网络与客户端通信的通信部分; 以及控制通信部的控制部。控制部分基于间接共享权限信息控制对在第一客户端和第二客户端之间发送/接收的信息的访问，所述间接共享权限信息包括指示作为信息的发送者的第一客户端的发射机标识信息，表示信息的接收者识别信息作为从发射机发送的信息的接收者的第二客户端; 指示作为第三方的第三方识别信息，该第三方可以访问与发送者和接收者之间发送/接收的信息的信息，以及第三方访问范围信息，该第三方访问范围信息指示第三方可以访问该信息。版权所有（C）2011，JPO＆INPIT

62. 发明专利

JP2007147525A Method of evaluating lift-off amount between eddy current flaw detecting probe and inspected object, and evaluation device therefor, eddy current flaw detection method, and eddy current flaw detector 有权
标题翻译：评估检测探头和被检查物体的EDDY电流检测之间的提升量的方法及其评估装置，EDDY电流检测方法和EDDY电流检测器
公开(公告)号：JP2007147525A
公开(公告)日：2007-06-14
申请号：JP2005344853
申请日：2005-11-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NISHIMIZU AKIRA , YOSHIDA ISAO , KOIKE MASAHIRO , MATSUI TETSUYA
IPC分类号： G01N27/90
摘要： PROBLEM TO BE SOLVED: To enhance evaluation precision for a lift-off amount of an eddy current flaw detecting probe with respect to a curved face shape part. SOLUTION: A signal generated in each coil is measured 2 when deforming the eddy current flaw detecting probe having a plurality of flexible coils, and a phase θ of the signal is evaluated 4. The signal generated in the each coil is measured 5 in every time when changing a distance between the eddy current flaw detecting probe and a flat face comprising a material same to that of an inspected object. A value of a phase angle component having θ+90° with respect to the signal detected in the measurement 5 is extracted 7 to prepare a data table of the distance corresponding to the value of the extracted component. Then, the eddy current flaw detecting probe is attached 9 to the inspected object in actual flaw detection inspection, a signal generated in the coil is measured 10 under this condition, a value of a phase angle component having θ+90° with respect to the signal detected in the measurement 10 is extracted 29, and the distance corresponding to the extracted 29 value is found from the data table to serve as an evaluation result 11 of the lift-off amount. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提高涡流探伤探针相对于曲面形状部分的剥离量的评价精度。解决方案：当使具有多个柔性线圈的涡流探伤探伤变形时，测量每个线圈中产生的信号2，并且评估信号的相位θ4.在每个线圈中产生的信号被测量5 在每次改变涡流探伤探针与包含与检查对象物质相同的材料的平面之间的距离时。提取相对于在测量5中检测到的信号具有θ+ 90°的相位角分量的值，以准备与提取的分量的值相对应的距离的数据表。然后，在实际的探伤检查中，将涡流探伤探测器9安装在被检查物体上，在该条件下测定线圈中产生的信号为10°，相对于提取测量10中检测到的信号29，并且从数据表中找到与提取的29值相对应的距离，以作为剥离量的评估结果11。版权所有（C）2007，JPO＆INPIT

63. 发明专利

JP2006107012A Portal screen configuring apparatus and computer software 有权
标题翻译：门户网络配置设备和计算机软件
公开(公告)号：JP2006107012A
公开(公告)日：2006-04-20
申请号：JP2004291168
申请日：2004-10-04
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YOSHIDA ISAO , YOSHIDA TAKAHIRO , KAMATA YOSHIE
IPC分类号： G06F13/00 , G06F3/048 , G06F3/14
摘要： PROBLEM TO BE SOLVED: To provide a portal screen configuring apparatus made to automatically change into a screen configuration which a user can easily use even if the user does not perform customizing work each time, and to provide computer software therefor. SOLUTION: The computer software stored in the portal screen configuring apparatus 10 generates a Web page based on a screen configuration definition 111 which defines the screen configuration of the Web page for every user and a screen configuration change definition 112 which defines a rule for changing the definition for every user. The computer software acquires a definition and a change definition corresponding to the user acquired from a client 20, acquires a screen configuration change factor for every user from the screen configuring apparatus 10 or the client 20, and processes and creates data of the Web page based on the function of changing the definition based on the definition and the change factor according to the user and the changed definition. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种即使用户每次都不执行定制工作而自动改变为用户可以容易地使用的屏幕配置的门户屏幕配置设备，并且提供用于其的计算机软件。存储在门户屏幕配置装置10中的计算机软件基于屏幕配置定义111生成网页，屏幕配置定义111定义每个用户的网页的屏幕配置以及定义规则的屏幕配置改变定义112 用于更改每个用户的定义。计算机软件获取与客户端20获取的用户对应的定义和变更定义，从屏幕配置装置10或客户端20获取每个用户的屏幕配置变更因子，并处理并创建基于网页的数据关于根据用户和更改的定义根据定义和变化因素改变定义的功能。版权所有（C）2006，JPO＆NCIPI

64. 发明专利

JP2004341862A Information exchange process control method and system 审中-公开
公开(公告)号：JP2004341862A
公开(公告)日：2004-12-02
申请号：JP2003138093
申请日：2003-05-16
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YOSHIDA ISAO , MUGISHIMA KOUJIROU
IPC分类号： G06F13/00 , H04L29/06
摘要： PROBLEM TO BE SOLVED: To provide an information exchange process management system capable of performing an information exchange based on a plurality of information exchange rules different in exchange procedure of message and being constructed in a short time at low cost.
SOLUTION: This system comprises a message conversion processing 22 for converting a message based on a message conversion definition 22 and a business status update processing 23 for updating status information based on a status transition definition 25. The status transition definition 25 and the message conversion definition 22 for defining a method for converting a standard message 22 for information exchange rules and business information 31 are defined in conformation to message exchange procedures based on the respective information exchange rules.
COPYRIGHT: (C)2005,JPO&NCIPI

65. 发明专利

JP2001002341A ELEVATOR DEVICE 失效
公开(公告)号：JP2001002341A
公开(公告)日：2001-01-09
申请号：JP17943499
申请日：1999-06-25
申请人： HITACHI LTD , HITACHI MITO ENG KK
发明人： ARAI EIGO , TACHIBANA MAKOTO , YOSHIDA ISAO , YASUDA TAKEHIKO
IPC分类号： B66B9/02 , B66B5/02
摘要： PROBLEM TO BE SOLVED: To release a brake of an electric motor without requiring an auxiliary power supply such as battery, by providing a car with a brake release means that activates a brake release lever by pressing and shifting a brake release wire with a brake release tool. SOLUTION: An electric motor 3 has a brake 4 including a brake release lever 18, and an end of the brake release lever 18 is connected to one end of a brake release wire 19. The end of the brake release wire 19 extends toward the bottom of a hoist-way 1 in parallel with a guide rail 16 and is fixed to a bottom fixing member. A car 11 is provided with a brake release tool 20 facing to the brake release wire 19 over an entire hoisting process. The brake release tool 20 projects one end in a cage 13 and has, at its tip, a roller 21 facing to the brake release wire 19 with a micro clearance. When the brake 4 of the electric motor 3 operates during hoisting of the car 11, the brake release tool 20 is pressed in to release the brake 4.

66. 发明专利

JP2000159095A PLATFORM DOOR DEVICE 失效
公开(公告)号：JP2000159095A
公开(公告)日：2000-06-13
申请号：JP33880598
申请日：1998-11-30
申请人： HITACHI LTD
发明人： KINOSHITA HIROSHI , INNAMI YOSHIO , ICHIGE TSUTOMU , YOSHIDA ISAO
IPC分类号： E01F1/00 , B61B1/02
摘要： PROBLEM TO BE SOLVED: To reduce the work to a platform side by fixing a door pocket by use of a fixing bar provided on a fixed fence situated on the door tail side of the door pocket. SOLUTION: A door pocket 2 is fastened to a fixed fence 1 through a lift type hinge 6. The lift type hinge 6 is of the type having a mechanism for lifting up the door pocket according to its rotation. The door pocket 2 is fixed by providing a fixing bar 7a on the side surfaces of the fixed fence 1 and the door pocket 2. The fixed fence 1 and the door pocket 2 have fixing bar receivers 4a, 4b for supporting the fixing bar 7a, respectively. A rotating shaft 5 is provided on the side surface of the fixed fence 1, and the fixing bar 7a is rotated about the shaft 5. Since the fixed fence 1 is fixed to the door pocket 2 by use of the fixing bar 7a, it is not necessary to fix the door pocket 2 to a platform surface by use of a pedestal. Therefore, the work to the platform can be reduced.

67. 发明专利

JP2000101080A PROTECTIVE CIRCUIT FOR SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE HAVING THE SAME 失效
公开(公告)号：JP2000101080A
公开(公告)日：2000-04-07
申请号：JP17505599
申请日：1999-06-22
申请人： HITACHI LTD
发明人： SAKAMOTO MITSUZO , YOSHIDA ISAO , MORIKAWA MASATOSHI , OTAKA SHIGEO
IPC分类号： H01L27/06 , H01L21/76 , H01L21/822 , H01L21/8234 , H01L27/04 , H01L27/08 , H01L27/088 , H01L29/78 , H01L29/786 , H02H7/20 , H03K17/08
摘要： PROBLEM TO BE SOLVED: To provide a power MOSFET incorporating over heat protection or overcurrent protection having high input impedance for high speed switching. SOLUTION: A second switching element M7 is provided between the input terminal 4 of a first switching element M0 and a drive circuit 10. The input terminal 4 is provided with a third switching element M5. The third switching element M5 is turned on while the second switching element M7 is turned off or provided with a high impedance by means of a circuit 12 for detecting the temperature or current of the first switching element M0. When the first switching element M0 enters into overheating or overcurrent state, the second switching element M7 is turned off while the third switching element M5 is turned on by a control circuit 11 and the input terminal 4 of a first element M0 is interrupted from an external terminal 2. Low current of the second element M7 is bypassed by the third element M5 during that protective operation and the first element M0 can be interrupted at high speed.

68. 发明专利

JPH09116101A BUILT-IN CONTROL CIRCUIT INSULATION GATE TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09116101A
公开(公告)日：1997-05-02
申请号：JP27517195
申请日：1995-10-24
申请人： HITACHI LTD
发明人： SAKAMOTO MITSUZO , YOSHIDA ISAO
IPC分类号： H01L27/04 , H01L21/822 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a built-in control circuit insulation gate type semiconductor device wherein its switching speed is improved, and its gate current when operating it to be protected from overcurrent is reduced, and further the area of its region to be protected from overcurrent is made small. SOLUTION: A gate 91 of a power MOSFET 43 and a gate terminal 11 are connected by a MOSFET 30, and the gate and source of the MOSFET 30 are connected by diodes 14, and further the drain and gate of the MOSFET 30 are connected by a resistor 16. Since when a large current flows in the power MOSFET 43 a current also flows in a MOSFET 21 and a MOSFET 31 connected in a current Miller circuit way with the MOSFET 21 is switched on to make the gate voltage of the MOSFET 30 lower than its source voltage, the ON-resistance of the MOSFET 30 becomes high. Thereby, the gate 91 of the power MOSFET 43 can be so controlled that its drain current is made not larger than a specified current value. When the power MOSFET 43 is switched on, the voltage of the gate terminal 11 is applied to the gate of the MOSFET 30 via the resistor 16.

69. 发明专利

JPH08181308A INSULATED GATE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08181308A
公开(公告)日：1996-07-12
申请号：JP32601094
申请日：1994-12-27
申请人： HITACHI LTD
发明人： YOSHIDA ISAO , KATSUEDA MINEO , MARUYAMA YASUO
IPC分类号： H01L29/78 , H01L29/423 , H01L29/45 , H01L29/49
摘要： PURPOSE: To obtain an insulated gate semiconductor device in which resistance to every gate from a gate bonding part is reduced, in which an unbalance between respective gate resistances is eliminated so as to improve a high-frequency characteristic and which is not limited by the current capacity of a first-layer metal layer so as to make an output high. CONSTITUTION: A two-layer structure is formed in such a way that first-layer aluminum layers are connected in parallel on polycrystal silicon gate electrodes 9. The gates which are adjacent are connected outside a channel region while the two-layer structure is kept. Central parts of the respective adjacent gates are connected by a second-layer extruded aluminum electrode 17 via opening parts 40. A gate bonding part 41 is formed in the center of the extruded electrode 17. A source electrode and a drain electrode are formed as a two-layer structure by first-layer aluminum layers 10, 11 and second-layer aluminum layers 15, 16.

70. 发明专利

JPH07335871A INSULATED GATE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JPH07335871A
公开(公告)日：1995-12-22
申请号：JP13280994
申请日：1994-06-15
申请人： HITACHI LTD
发明人： SAKAMOTO MITSUZO , YOSHIDA ISAO , OTAKA SHIGEO , IIJIMA TETSUO
IPC分类号： H01L29/78 , H01L21/336
摘要： PURPOSE:To provide structure of an insulated gate semiconductor device which can coexist with a polycrystalline silicon diode and does not cause breakdown voltage deterioration when process is reduced. CONSTITUTION:An N-type diffusion layer 8a for a low ON resistor and an N-type diffusion layer 8b for increasing the drain breakdown voltage are formed in the surface region of an N-type epitaxial layer 2 on an N substrate 1 for a drain, without using a mask, in a self-alignment manner to a P-type diffusion layer 6a just under a LOCOS oxide film 7 in a field part. Contact 30 between an aluminum gate electrode 15c constituting a gate finger and a polycrystalline silicon gate layer 10a, and a polycrystalline silicon diode (which is not shown in Figure) are formed on the oxide film 7. The impurity concentration of the P-type diffusion layer 6a is set lower than that of a P-type diffusion layer 11a for a channel. The P-type diffusion layer 11a and an N-type diffusion layer 12a for a source are formed by diffusion self-alignment using the polycrystalline silicon gate 10a as a mask.

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