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61. 发明授权

US08940388B2 Insulative elements 有权
标题翻译：绝缘元素
公开(公告)号：US08940388B2
公开(公告)日：2015-01-27
申请号：US13038605
申请日：2011-03-02
申请人： Vassil Antonov , Jennifer K. Sigman , Vishwanath Bhat , Matthew N. Rocklein , Bhaskar Srinivasan , Chris Carlson
发明人： Vassil Antonov , Jennifer K. Sigman , Vishwanath Bhat , Matthew N. Rocklein , Bhaskar Srinivasan , Chris Carlson
IPC分类号： B32B7/02 , H01G4/33 , H01G4/30 , H01G4/12
CPC分类号： H01L28/40 , H01G4/1209 , H01G4/1218 , H01G4/1236 , H01G4/1254 , H01G4/1272 , H01G4/306 , H01G4/33 , H01L21/02172 , H01L21/02356 , H01L21/225 , Y10T428/2495
摘要： Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.
摘要翻译：描述了形成绝缘元件的方法，包括形成具有第一介电常数的第一金属氧化物材料，形成具有与第一介电常数不同的第二介电常数的第二金属氧化物材料，并加热该结构的至少部分至少结晶第一电介质材料和第二电介质材料中的至少一个的一部分。描述了形成电容器的方法，包括形成第一电极，在第一电极上形成具有第一氧化物和第二氧化物的介电材料，以及在电介质材料上形成第二电极。还描述了包括电介质材料的结构。

62. 发明授权

US08080460B2 Methods of forming diodes 有权
标题翻译：形成二极管的方法
公开(公告)号：US08080460B2
公开(公告)日：2011-12-20
申请号：US12323978
申请日：2008-11-26
申请人： Gurtej S. Sandhu , Bhaskar Srinivasan
发明人： Gurtej S. Sandhu , Bhaskar Srinivasan
IPC分类号： H01L21/8222
CPC分类号： H01L21/04 , H01L27/1021 , H01L27/2418 , H01L29/1606 , H01L45/00
摘要： Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed.
摘要翻译：一些实施例包括形成二极管的方法。可以在第一导电材料上形成堆叠。堆叠可以按升序包括牺牲材料，至少一种电介质材料和第二导电材料。间隔物可以沿着堆叠的相对侧壁形成，然后可以去除整个牺牲材料以在第一导电材料和至少一个电介质材料之间留下间隙。在形成二极管的一些实施例中，可以在第一导电材料上形成层，其中包含支撑体的层散布在牺牲材料中。可以在该层上形成至少一种介电材料，并且可以在该至少一种电介质材料的上方形成第二导电材料。然后可以去除整个牺牲材料。

63. 发明申请

US20110201200A1 Diodes, and Methods Of Forming Diodes 有权
标题翻译：二极管和形成二极管的方法
公开(公告)号：US20110201200A1
公开(公告)日：2011-08-18
申请号：US13094642
申请日：2011-04-26
申请人： Gurtej S. Sandhu , Bhaskar Srinivasan
发明人： Gurtej S. Sandhu , Bhaskar Srinivasan
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L45/00 , Y10S257/91 , Y10S438/90 , Y10S438/902 , Y10S438/983
摘要： Some embodiments include methods of forming diodes. The methods may include oxidation of an upper surface of a conductive electrode to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of an oxidizable material over a conductive electrode, and subsequent oxidation of the oxidizable material to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of a metal halide layer over a conductive electrode. Some embodiments include diodes that contain a metal halide layer between a pair of diode electrodes.
摘要翻译：一些实施例包括形成二极管的方法。所述方法可以包括氧化导电电极的上表面以在导电电极上形成氧化物层。在一些实施方案中，所述方法可包括在导电电极上形成可氧化材料，以及随后氧化可氧化材料以在导电电极上形成氧化物层。在一些实施例中，所述方法可包括在导电电极上形成金属卤化物层。一些实施例包括在一对二极管电极之间包含金属卤化物层的二极管。

64. 发明授权

US07951619B2 Diodes, and methods of forming diodes 有权
标题翻译：二极管和形成二极管的方法
公开(公告)号：US07951619B2
公开(公告)日：2011-05-31
申请号：US12875007
申请日：2010-09-02
申请人： Gurtej S. Sandhu , Bhaskar Srinivasan
发明人： Gurtej S. Sandhu , Bhaskar Srinivasan
IPC分类号： H01L21/00
CPC分类号： H01L45/00 , Y10S257/91 , Y10S438/90 , Y10S438/902 , Y10S438/983
摘要： Some embodiments include methods of forming diodes. The methods may include oxidation of an upper surface of a conductive electrode to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of an oxidizable material over a conductive electrode, and subsequent oxidation of the oxidizable material to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of a metal halide layer over a conductive electrode. Some embodiments include diodes that contain a metal halide layer between a pair of diode electrodes.
摘要翻译：一些实施例包括形成二极管的方法。所述方法可以包括氧化导电电极的上表面以在导电电极上形成氧化物层。在一些实施方案中，所述方法可包括在导电电极上形成可氧化材料，以及随后氧化可氧化材料以在导电电极上形成氧化物层。在一些实施例中，所述方法可包括在导电电极上形成金属卤化物层。一些实施例包括在一对二极管电极之间包含金属卤化物层的二极管。

65. 发明申请

US20090316697A1 Pre-Dropping of a Packet if Its Time-To-Live (TTL) Value is Not Large Enough to Reach a Destination 有权
标题翻译：如果数据包的生存时间（TTL）值不足以达到目的地，则丢弃数据包
公开(公告)号：US20090316697A1
公开(公告)日：2009-12-24
申请号：US12185109
申请日：2008-08-03
申请人： Karthik Dakshinamoorthy , Bhaskar Srinivasan
发明人： Karthik Dakshinamoorthy , Bhaskar Srinivasan
IPC分类号： H04L12/56
CPC分类号： H04L12/1886 , H04L47/10
摘要： Disclosed are, inter alia, methods, apparatus, computer-storage media, mechanisms, and means associated with pre-dropping of a packet if its Time-To-Live (TTL) value is not large enough to reach a destination, such as, but not limited to, its destination if it is a unicast packet, or at least one more destination for a multicast packet. A packet switching device maintains associations between (a) nearest receiving node distances and (b) prefixes or complete addresses. If a packet does not have enough TTL to reach an intended recipient identified by a corresponding nearest receiving node distance, then the packet is dropped even though the TTL has not expired. In this manner, some bandwidth and other network resources are not wasted on traffic that will timeout via the TTL mechanism before reaching a subsequent intended recipient.
摘要翻译：披露了如果其生存时间（TTL）值不足以到达目的地的方法，装置，计算机存储介质，机制和与丢弃分组相关联的装置，例如，但不限于，如果它是单播分组，则其目的地，或者至少一个多播分组的目的地。分组交换设备保持（a）最近的接收节点距离和（b）前缀或完整地址之间的关联。如果分组没有足够的TTL来达到由对应的最近接收节点距离标识的预期接收者，则即使TTL未过期，分组也被丢弃。以这种方式，一些带宽和其他网络资源不会浪费在通过TTL机制超时到达后续预期接收者的流量上。

66. 发明授权

US07426190B2 System and method for a communication protocol for wireless sensor systems including systems with high priority asynchronous message and low priority synchronous message 有权
标题翻译：用于无线传感器系统的通信协议的系统和方法，包括具有高优先级异步消息和低优先级同步消息的系统
公开(公告)号：US07426190B2
公开(公告)日：2008-09-16
申请号：US11240436
申请日：2005-09-30
申请人： Arati Manjeshwar , Lakshmi Venkatraman , Bhaskar Srinivasan , Anshul Pandey , Jim Berube
发明人： Arati Manjeshwar , Lakshmi Venkatraman , Bhaskar Srinivasan , Anshul Pandey , Jim Berube
IPC分类号： H04L12/28
CPC分类号： H04W8/26 , H04W8/005 , H04W24/02 , H04W52/0229 , H04W72/02 , Y02D70/00
摘要： A method for initializing a wireless network is provided which includes discovering at least one node of the wireless network that is within hearing range of a base station of the wireless network, authenticating the at least one discovered node, assigning a node identifier to the at least one discovered node, and selecting a network frequency, at least one backup frequency, and a locally unique network identifier.
摘要翻译：提供了一种用于初始化无线网络的方法，其包括发现无线网络的在无线网络的基站的听力范围内的至少一个节点，认证所述至少一个已发现的节点，将节点标识符分配给至少一个发现的节点，以及选择网络频率，至少一个备份频率和本地唯一的网络标识符。

67. 发明申请

US20080118731A1 Method of forming a structure having a high dielectric constant, a structure having a high dielectric constant, a capacitor including the structure, a method of forming the capacitor 审中-公开
标题翻译：形成具有高介电常数的结构的方法，具有高介电常数的结构，包括该结构的电容器，形成电容器的方法
公开(公告)号：US20080118731A1
公开(公告)日：2008-05-22
申请号：US11600695
申请日：2006-11-16
申请人： Bhaskar Srinivasan , John A. Smythe
发明人： Bhaskar Srinivasan , John A. Smythe
IPC分类号： B05D5/12 , H01G9/00 , H01G4/005
CPC分类号： H01G4/12 , H01G4/1218 , H01L27/10852
摘要： A method of forming a dielectric structure, such as a layer, is disclosed. The method comprises forming a high-k structure from a plurality of portions of a high-k material. Each of the plurality of portions of the high-k material is formed by depositing a plurality of monolayers of the high-k material and annealing the high-k material. The high-k material may be a perovskite-type material including, but not limited to, strontium titanate. A dielectric structure, a capacitor incorporating a dielectric structure and a method of forming a capacitor are also disclosed.
摘要翻译：公开了形成诸如层之类的电介质结构的方法。该方法包括从高k材料的多个部分形成高k结构。通过沉积高k材料的多个单层并退火高k材料来形成高k材料的多个部分中的每一个。高k材料可以是钙钛矿型材料，包括但不限于钛酸锶。还公开了电介质结构，并入介质结构的电容器和形成电容器的方法。

68. 发明申请

US20070093208A1 Method and system for providing interference avoidance and network coexistence in wireless systems 审中-公开
标题翻译：在无线系统中提供干扰避免和网络共存的方法和系统
公开(公告)号：US20070093208A1
公开(公告)日：2007-04-26
申请号：US11240545
申请日：2005-09-30
申请人： Arati Manjeshwar , Lakshmi Venkatraman , Anshul Pandey , Bhaskar Srinivasan
发明人： Arati Manjeshwar , Lakshmi Venkatraman , Anshul Pandey , Bhaskar Srinivasan
IPC分类号： H04B1/00 , H04B15/00
CPC分类号： H04W72/082
摘要： A method for providing interference avoidance in a network, the method including sampling each frequency of a communication channel available to the network, collecting samples at a certain location of the network, choosing at least one of a suitable frequency and a unique network identifier based on the collected samples, and distributing the at least one of the suitable frequency and the network identifier to a device of the network.
摘要翻译：一种用于在网络中提供干扰避免的方法，所述方法包括对网络可用的通信信道的每个频率进行采样，在网络的特定位置收集样本，基于以下方式选择合适的频率和唯一网络标识符中的至少一个：收集的样本，并将适当频率和网络标识符中的至少一个分发到网络的设备。

69. 发明申请

US20220238516A1 POLYSILICON RESISTOR USING REDUCED GRAIN SIZE POLYSILICON 有权
公开(公告)号：US20220238516A1
公开(公告)日：2022-07-28
申请号：US17463252
申请日：2021-08-31
申请人： Yanbiao Pan , Robert Martin Higgins , Pushpa Mahalingam , Bhaskar Srinivasan
发明人： Yanbiao Pan , Robert Martin Higgins , Pushpa Mahalingam , Bhaskar Srinivasan
IPC分类号： H01L27/08 , H01L49/02 , H01L21/02
摘要： Described examples include a resistor having a substrate having a non-conductive surface and a patterned polysilicon layer on the non-conductive surface, the patterned polysilicon layer including polycrystalline silicon wherein at least 90% of the grains in the polycrystalline silicon are 30 nm or smaller. The resistor also has a first terminal in conductive contact with the patterned polysilicon layer and a second terminal in conductive contact with the polysilicon layer and spaced from the first contact.

70. 发明授权

US08634224B2 Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell 有权
标题翻译：存储单元，非易失性存储器阵列，操作存储器单元的方法，写入存储器单元和从存储器单元读取的方法，以及编程存储器单元的方法
公开(公告)号：US08634224B2
公开(公告)日：2014-01-21
申请号：US12855624
申请日：2010-08-12
申请人： Bhaskar Srinivasan , Gurtej S. Sandhu
发明人： Bhaskar Srinivasan , Gurtej S. Sandhu
IPC分类号： G11C11/00
CPC分类号： G11C13/0002 , G11C13/0007 , G11C13/0011 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2213/12 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/56 , G11C2213/77 , H01L27/101 , H01L45/08 , H01L45/085 , H01L45/1206
摘要： In one aspect, a method of operating a memory cell includes using different electrodes to change a programmed state of the memory cell than are used to read the programmed state of the memory cell. In one aspect, a memory cell includes first and second opposing electrodes having material received there-between. The material has first and second lateral regions of different composition relative one another. One of the first and second lateral regions is received along one of two laterally opposing edges of the material. Another of the first and second lateral regions is received along the other of said two laterally opposing edges of the material. At least one of the first and second lateral regions is capable of being repeatedly programmed to at least two different resistance states. Other aspects and implementations are disclosed.
摘要翻译：一方面，操作存储单元的方法包括使用不同的电极来改变存储器单元的编程状态，而不是用于读取存储单元的编程状态。在一个方面，存储单元包括第一和第二相对电极，其间具有接收在其间的材料。该材料具有彼此不同组成的第一和第二横向区域。第一和第二横向区域中的一个沿着材料的两个横向相对的边缘中的一个被接收。第一和第二横向区域中的另一个沿着材料的所述两个横向相对的边缘中的另一个被容纳。第一和第二横向区域中的至少一个能够被重复编程至至少两个不同的阻力状态。公开了其他方面和实现。

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