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61. 发明申请

US20110081832A1 POLISHING DEVICE AND POLISHING METHOD 审中-公开
标题翻译：抛光装置和抛光方法
公开(公告)号：US20110081832A1
公开(公告)日：2011-04-07
申请号：US12794472
申请日：2010-06-04
申请人： Kenro Nakamura , Yukiteru Matsui , Takeshi Nishioka
发明人： Kenro Nakamura , Yukiteru Matsui , Takeshi Nishioka
IPC分类号： B24B1/00 , B24B7/04
CPC分类号： B24B37/10 , B24B55/02 , B24B57/02
摘要： In one embodiment, a polishing device includes: a rotatable turntable, a holding unit, a separation wall, a slurry supply tube, and a cooling medium supply tube. On an upper surface of the rotatable turntable, a polishing pad is attached. The holding unit rotatably holds an object to be polished and disposes a polished surface of the object to be polished in a manner to face the polishing pad. The separation wall abuts on the upper surface of the polishing pad and sections the polishing pad into a polished region in which the holding unit is provided and an unpolished region in which the holding unit is not provided. The slurry supply tube supplies a slurry to the upper surface of the polishing pad in a polished region side. The cooling medium supply tube supplies a cooling medium to the upper surface of the polishing pad in the unpolished region.
摘要翻译：在一个实施例中，抛光装置包括：可旋转转台，保持单元，分隔壁，浆料供应管和冷却介质供应管。在可旋转转盘的上表面上安装有抛光垫。保持单元可旋转地保持要抛光的物体，并以与抛光垫相对的方式配置被抛光物体的抛光表面。分隔壁抵接在抛光垫的上表面上，并将抛光垫分成抛光区域，在其中设置保持单元和未设置保持单元的未抛光区域。浆料供给管在抛光区域侧向抛光垫的上表面供给浆料。冷却介质供给管将未冷却区域的冷却介质供给到抛光垫的上表面。

62. 发明授权

US07829406B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07829406B2
公开(公告)日：2010-11-09
申请号：US12208372
申请日：2008-09-11
申请人： Shunsuke Doi , Yukiteru Matsui
发明人： Shunsuke Doi , Yukiteru Matsui
IPC分类号： H01L21/8238
CPC分类号： H01L21/31053 , H01L21/76229
摘要： Disclosed is a method of manufacturing a semiconductor device, which includes forming an insulating film above a semiconductor substrate having a recess and stopper film formed above the semiconductor substrate excluding the recess, thereby filling the recess with the insulating film, performing a first polishing by polishing the insulating film by means of a chemical mechanical polishing method using a first polishing liquid containing cerium oxide and first anionic surfactant, thereby obtaining a flattened surface, and performing a second polishing by polishing the flattened insulating film using a second polishing liquid containing cerium oxide and a second anionic surfactant having a smaller molecular weight than that of the first anionic surfactant under a polishing condition which differs from that of the first polishing, thereby exposing the stopper film.
摘要翻译：公开了一种制造半导体器件的方法，其包括在半导体衬底上形成绝缘膜，该半导体衬底具有形成在除了凹部之外的半导体衬底之上的凹部和阻挡膜，从而用绝缘膜填充凹部，通过抛光执行第一抛光该绝缘膜通过使用含有氧化铈和第一阴离子表面活性剂的第一研磨液的化学机械研磨法进行化学机械研磨，得到平坦化面，通过使用含有氧化铈的第二研磨液，对平坦化的绝缘膜进行研磨，进行第二次研磨，在与第一研磨不同的抛光条件下，分子量小于第一阴离子表面活性剂的第二阴离子表面活性剂，从而暴露出止动膜。

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