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    • 61. 发明授权
    • Real-time computerized annotation of pictures
    • 图片的实时电脑注释
    • US07941009B2
    • 2011-05-10
    • US11872260
    • 2007-10-15
    • Jia LiJames Z. Wang
    • Jia LiJames Z. Wang
    • G06K9/54G06F7/00
    • G06K9/00664G06F17/3025G06F17/30262G06F17/30265G06K9/6215G06K9/6226
    • A computerized annotation method achieves real-time operation and better optimization properties while preserving the architectural advantages of the generative modeling approach. A novel clustering algorithm for objects is represented by discrete distributions, or bags of weighted vectors, thereby minimizing the total within cluster distance, a criterion used by the k-means algorithm. A new mixture modeling method, the hypothetical local mapping (HLM) method, is used to efficiently build a probability measure on the space of discrete distributions. Thus, in accord with the invention every image is characterized by a statistical distribution. The profiling model specifies a probability law for distributions directly.
    • 计算机化注释方法实现了实时操作和更好的优化属性,同时保留了生成建模方法的架构优势。 用于对象的新颖的聚类算法由离散分布或包的加权向量表示,从而使簇距离内的总数最小化,这是k-means算法使用的标准。 一种新的混合建模方法,即假设局部映射(HLM)方法,用于有效构建离散分布空间的概率测度。 因此,根据本发明,每个图像的特征在于统计分布。 分析模型直接指定分布概率定律。
    • 62. 发明授权
    • Image-based CAPTCHA generation system
    • 基于图像的人机识别系统
    • US07929805B2
    • 2011-04-19
    • US11668853
    • 2007-01-30
    • James Z. WangRitendra DattaJia Li
    • James Z. WangRitendra DattaJia Li
    • G06K9/32
    • G06K9/00
    • In a system and method for the generation of attack-resistant, user-friendly, image-based CAPTCHAs (Completely Automated Public test to Tell Computers and Humans Apart), controlled distortions are applied to randomly chosen images and presented to a user for annotation from a given list of words. An image is presented that contains multiple connected but independent images with the borders between them distorted or otherwise visually obfuscated in a way that a computer cannot distinguish the borders and a user selects near the center of one of the images. The distortions are performed in a way that satisfies the incongruous requirements of low perceptual degradation and high resistance to attack by content-based image retrieval systems. Word choices are carefully generated to avoid ambiguity as well as to avoid attacks based on the choices themselves.
    • 在用于生成抗攻击,用户友好的基于图像的CAPTCHAs(完全自动公共测试以告知计算机和人类)的系统和方法中,控制的失真被应用于随机选择的图像,并呈现给用户以从 给定的单词列表。 呈现包含多个连接但独立的图像的图像,其中它们之间的边界被扭曲或者以计算机无法区分边界并且用户在图像之一附近的中心附近选择的视觉模糊处理。 这种扭曲是以满足基于内容的图像检索系统的低感知降解和高抵抗攻击的不协调要求的方式进行的。 仔细地生成词选择以避免歧义,并避免基于选择本身的攻击。
    • 63. 发明授权
    • Method of forming active and isolation areas with split active patterning
    • 用分裂活性图案形成活性和隔离区域的方法
    • US07235460B2
    • 2007-06-26
    • US09803715
    • 2001-03-09
    • Jia Li
    • Jia Li
    • H01L21/322
    • H01L21/76218H01L21/76202H01L27/092
    • A process for forming isolation and active regions, wherein the patterning of an oxidation-barrier active stack is performed separately in the PMOS and NMOS regions. After the active stack is in place, two masking steps are used: one exposes the isolation areas on the NMOS side, for stack etch, channel-stop implant, and silicon recess etch (optional); the other masking step is exactly complementary, and performs the analogous operations on the PMOS side. After these two steps are performed (in either order), an additional nitride layer can optionally be deposited and etched to cover the sidewall of the active stack. Field oxide is then formed, and processing then proceeds in conventional fashion.
    • 一种用于形成隔离和有源区的方法,其中在PMOS和NMOS区中单独进行氧化势垒有源堆叠的图案化。 在有源堆栈就位后,使用两个屏蔽步骤:一个暴露在NMOS侧的隔离区域,用于堆叠蚀刻,沟道停止注入和硅凹槽蚀刻(可选); 另一掩蔽步骤是完全互补的,并且在PMOS侧执行类似的操作。 在执行这两个步骤(以任一顺序)后,可以可选地沉积和蚀刻另外的氮化物层以覆盖有源堆叠的侧壁。 然后形成场氧化物,然后以常规方式进行处理。
    • 64. 发明申请
    • Genetic polymorphisms in the preprotachykinin gene
    • 前列腺素基因的遗传多态性
    • US20060228752A1
    • 2006-10-12
    • US11472083
    • 2006-06-21
    • Dorothee FoernzlerLara HashimotoJia LiEric LuedinAndrew SleightPierre Vankan
    • Dorothee FoernzlerLara HashimotoJia LiEric LuedinAndrew SleightPierre Vankan
    • C12Q1/68A61K31/5377C07H21/04
    • C12Q1/6883C12Q2600/156
    • The present invention relates to a method for correlating single nucleotide polymorphisms in the preprotachykinin (NKNA) gene with the efficacy and compatibility of a pharmaceutically active compound administered to a human being. The invention further relates to a method for determining the efficacy and compatibility of a pharmaceutically active compound administered to a human being which method comprises determining at least one single nucleotide polymorphism in the NKNA gene. Said methods are based on determining specific single nucleotide polymorphisms in the NKNA gene and determining the efficacy and compatibility of a pharmaceutically active compound in the human by reference to polymorphism in NKNA. The invention further relates to isolated nucleic acids comprising within their sequence the polymorphisms as defined herein, to nucleic acid primers and oligonucleotide probes capable of hybridizing to such nucleic acids and to a diagnostic kit comprising one or more of such primers and probes for detecting a polymorphism in the NKNA gene, to a pharmaceutical pack comprising NK-1 receptor antagonists and instructions for administration of the drug to human beings tested for the polymorphisms as well as to a computer readable medium with the stored sequence information for the polymorphisms in the NKNA gene.
    • 本发明涉及一种使前列腺素激素(NKNA)基因中的单核苷酸多态性与施用于人的药学活性化合物的功效和相容性相关联的方法。 本发明还涉及确定施用于人的药物活性化合物的功效和相容性的方法,该方法包括测定NKNA基因中的至少一个单核苷酸多态性。 所述方法基于确定NKNA基因中的特异性单核苷酸多态性,并参考NKNA中的多态性确定药物活性化合物在人体中的功效和相容性。 本发明还涉及在其序列中包含本文所定义的多态性的分离的核酸与能够与此类核酸杂交的核酸引物和寡核苷酸探针以及包含一种或多种用于检测多态性的引物和探针的诊断试剂盒 在NKNA基因中,涉及包含NK-1受体拮抗剂的药物组合物,以及向该多态性测试的人给药的说明书以及具有存储的NKNA基因多态性序列信息的计算机可读介质。
    • 67. 发明授权
    • Thin film transistor fabrication technique
    • 薄膜晶体管制造技术
    • US5926701A
    • 1999-07-20
    • US887574
    • 1997-07-03
    • Jia Li
    • Jia Li
    • H01L21/336A01L21/84
    • H01L29/66757Y10S438/976
    • An improved method of forming thin film transistors includes depositing a gate dielectric material over a gate electrode and subsequently depositing a polysilicon layer over the dielectric layer. Prior to applying a photoresist material, the polysilicon layer is coated with a protective layer of, for example, silicon oxide. A photoresist material is then applied and the polysilicon layer subsequently selectively etched to form the transistor body. Finally, any masking material is removed. The protective silicon dioxide layer prevents ion contamination of the polysilicon transistor body which can occur during the masking procedure, during the etch procedure, or during subsequent removal of any foreign mask and cleaning procedures. This will, in effect, enable one to prepare transistors with a better-defined threshold.
    • 形成薄膜晶体管的改进方法包括在栅电极上沉积栅极电介质材料,随后在电介质层上沉积多晶硅层。 在施加光致抗蚀剂材料之前,多晶硅层被涂覆有例如氧化硅的保护层。 然后施加光致抗蚀剂材料,随后选择性地蚀刻多晶硅层以形成晶体管体。 最后,去除任何掩蔽材料。 保护性二氧化硅层防止了在掩模过程期间,在蚀刻过程期间或在随后除去任何外来掩模和清洁程序期间可能发生的多晶硅晶体管体的离子污染。 实际上,这将使得能够制备具有更好定义阈值的晶体管。
    • 68. 发明授权
    • Nitride encapsulated thin film transistor fabrication technique
    • 氮化物封装薄膜晶体管制造技术
    • US5923964A
    • 1999-07-13
    • US783111
    • 1997-01-14
    • Jia Li
    • Jia Li
    • H01L21/265H01L21/336H01L23/29H01L29/786H01L21/84
    • H01L29/66765H01L23/291H01L29/78678H01L2924/0002
    • A thin film transistor includes a thin film transistor body above a gate electrode. The thin film transistor body is hydrogenated to prevent the transistor body from apparently capturing and releasing electrons. The transistor body itself is coated with an upper and lower layer of silicon nitride to prevent the trapped hydrogen from migrating out of the transistor body over time. This is formed by depositing a layer of silicon dioxide, then a layer of silicon nitride over the gate electrode, followed by deposition of a polysilicon layer which is then etched to form the transistor body. This is hydrogenated after threshold adjustment implant and source/drain implant and subsequently coated with an upper sealing layer of silicon nitride. This enables the establishment of relatively high lon/loff ratio and improves the reliability of the transistor.
    • 薄膜晶体管包括在栅电极上方的薄膜晶体管体。 氢化薄膜晶体管体以防止晶体管体明显捕获和释放电子。 晶体管本身本身涂覆有上下的氮化硅层,以防止捕获的氢随着时间的推移离开晶体管体。 这是通过在栅电极上沉积二氧化硅层,然后沉积氮化硅层,然后沉积多晶硅层而形成的,然后将多晶硅层进行蚀刻以形成晶体管体。 这在阈值调整植入和源极/漏极植入之后被氢化,并随后涂覆有上部氮化硅密封层。 这使得能够建立相对较高的lon / loff比率并且提高了晶体管的可靠性。