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    • 67. 发明授权
    • Microscale vacuum tube device and method for making same
    • 微型真空管装置及其制作方法
    • US06987027B2
    • 2006-01-17
    • US10646502
    • 2003-08-23
    • Sungho Jin
    • Sungho Jin
    • H01L21/00
    • H01J3/021H01J9/025H01J21/10Y10S977/939
    • The invention comprises a method of fabricating a vacuum microtube device comprising the steps of forming a cathode layer comprising an array of electron emitters, forming a gate layer comprising an array of openings for passing electrons from the electron emitters, and forming an anode layer for receiving electrons from the emitters. The cathode gate layer and the anode layer are vertically aligned and bonded together with intervening spacers on a silicon substrate so that electrons from respective emitters pass through respective gate openings to the anode. The use of substrate area is highly efficient and electrode spacing can be precisely controlled. An optional electron multiplying structure providing secondary electron emission material can be disposed between the gate layer and the anode in the path of emitted electrons.
    • 本发明包括一种制造真空微管装置的方法,包括以下步骤:形成包括电子发射体阵列的阴极层,形成包含用于使来自电子发射体的电子的开口阵列的栅极层,以及形成用于接收的阳极层 来自发射体的电子。 阴极栅极层和阳极层与硅衬底上的中间间隔物垂直对准并结合在一起,使得来自各个发射体的电子通过相应的栅极开口到达阳极。 衬底面积的使用是高效的,电极间距可以精确控制。 提供二次电子发射材料的可选的电子倍增结构可以在发射电子的路径中设置在栅极层和阳极之间。