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    • 63. 发明授权
    • Thermally-assisted magnetic recording head capable of reducing the transient protrusion of an antenna
    • 能够减少天线瞬态突起的热辅助磁记录头
    • US08593915B2
    • 2013-11-26
    • US13136462
    • 2011-08-01
    • Erhard SchreckKowang LiuKouji ShimazawaPo-Kang Wang
    • Erhard SchreckKowang LiuKouji ShimazawaPo-Kang Wang
    • G11B11/00
    • G11B5/314G11B5/6088G11B2005/001G11B2005/0021
    • A slider mounted TAMR (Thermal Assisted Magnetic Recording), DFH (Dynamic Flying Height) type read/write head using optical-laser generated surface plasmons in a small antenna to locally heat a magnetic medium, uses the same optical laser at low power to pre-heat the antenna. Maintaining the antenna at this pre-heated temperature, approximately 50% of its highest temperature during write operations, allows the DFH mechanism sufficient time to compensate for the thermal protrusion of the antenna at that lower temperature, so that thermal protrusion transients are significantly reduced when a writing operation occurs and full laser power is applied. The time constant for antenna protrusion is less than the time constant for DFH fly height compensation, so, without pre-heating, the thermal protrusion of the antenna due to absorption of optical radiation cannot be compensated by the DFH effect.
    • 使用在小天线中使用光学激光产生的表面等离子体激光器来局部加热磁介质的TAMR(热辅助磁记录),DFH(动态飞行高度)型读/写头的滑块,以低功率使用相同的光学激光器 - 加热天线。 将天线维持在该预热温度下,在写入操作期间其最高温度的约50%允许DFH机构有足够的时间来补偿在该较低温度下的天线的热突起,使得热突起瞬变显着降低 发生写入操作并施加全激光功率。 天线突起的时间常数小于DFH飞行高度补偿的时间常数,因此,在没有预热的情况下,由于吸收光辐射而导致的天线热突起不能被DFH效应补偿。
    • 67. 发明授权
    • Power control of TAMR element during read/write transition
    • 读/写转换期间TAMR元件的功耗控制
    • US07995425B2
    • 2011-08-09
    • US12381327
    • 2009-03-11
    • Erhard SchreckKowang LiuKouji ShimazawaPo-Kang Wang
    • Erhard SchreckKowang LiuKouji ShimazawaPo-Kang Wang
    • G11B11/00
    • G11B5/314G11B5/6088G11B2005/001G11B2005/0021
    • A slider mounted TAMR (Thermal Assisted Magnetic Recording), DFH (Dynamic Flying Height) type read/write head using optical-laser generated surface plasmons in a small antenna to locally heat a magnetic medium, uses the same optical laser at low power to pre-heat the antenna. Maintaining the antenna at this pre-heated temperature, approximately 50% of its highest temperature during write operations, allows the DFH mechanism sufficient time to compensate for the thermal protrusion of the antenna at that lower temperature, so that thermal protrusion transients are significantly reduced when a writing operation occurs and full laser power is applied. The time constant for antenna protrusion is less than the time constant for DFH fly height compensation, so, without pre-heating, the thermal protrusion of the antenna due to absorption of optical radiation cannot be compensated by the DFH effect.
    • 使用在小天线中使用光学激光产生的表面等离子体激光器来局部加热磁介质的TAMR(热辅助磁记录),DFH(动态飞行高度)型读/写头的滑块,以低功率使用相同的光学激光器 - 加热天线。 将天线维持在该预热温度下,在写入操作期间其最高温度的约50%允许DFH机构有足够的时间来补偿在该较低温度下的天线的热突起,使得热突起瞬变显着降低 发生写入操作并施加全激光功率。 天线突起的时间常数小于DFH飞行高度补偿的时间常数,因此,在没有预热的情况下,由于吸收光辐射而导致的天线热突起不能被DFH效应补偿。
    • 68. 发明授权
    • Spin-torque MRAM: spin-RAM, array
    • 旋转力矩MRAM:旋转RAM,阵列
    • US07852662B2
    • 2010-12-14
    • US11789324
    • 2007-04-24
    • Hsu Kai YangPo-Kang Wang
    • Hsu Kai YangPo-Kang Wang
    • G11C11/00
    • G11C11/16
    • A spin-torque MRAM array has MRAM cells arranged in rows and columns. Bit lines are connected to each of the MRAM cells on each column. Source select lines are connected to each MRAM cell of a pair of rows and are oriented orthogonally to the bit lines. Write lines are connected to the gate of the gating MOS transistor of each MRAM cell of the rows. The MRAM cells are written in a two step process with selected MRAM cells written to a first logic level (0) in a first step and selected MRAM cells written to a second logic level (1) in a second step. A second embodiment of the spin-torque MRAM array has the bit lines commonly connected together to receive the data and the source select lines commonly connected together to receive an inverse of the data for writing.
    • 自旋扭矩MRAM阵列具有以行和列排列的MRAM单元。 位线连接到每列上的每个MRAM单元。 源选择线连接到一对行的每个MRAM单元并且与位线正交地定向。 写入线连接到行的每个MRAM单元的选通MOS晶体管的栅极。 MRAM单元以两步过程写入,在第一步骤中将所选MRAM单元写入第一逻辑电平(0),并在第二步骤中将所选择的MRAM单元写入第二逻辑电平(1)。 自旋扭矩MRAM阵列的第二实施例具有通常连接在一起的位线,以接收通常连接在一起的数据和源选择线,以接收用于写入的数据的倒数。
    • 69. 发明授权
    • Magnetic tunnel junction (MTJ) based magnetic field angle sensor
    • 磁隧道结(MTJ)磁场角传感器
    • US07635974B2
    • 2009-12-22
    • US11799706
    • 2007-05-02
    • Yimin GuoPo-Kang Wang
    • Yimin GuoPo-Kang Wang
    • G01B7/30
    • G01R33/093B82Y25/00G01R33/098
    • A magnetic field angle sensor for measurement of a magnetic field angle over a 360° range has magnetic tunnel junction elements oriented at multiple angles. The magnetic field angle sensor includes multiple magnetic tunnel junction elements formed on a substrate that have an anti-ferromagnetic layer and pinned synthetic multiple layer. The magnetic tunnel junction elements are patterned to have a large dimensional aspect ratio and large anisotropies the pinned synthetic multiple layer of the magnetic tunnel junction elements. The magnetic tunnel junction elements are annealed in the presence of a strong magnetic field in a direction of the reference axis and the annealed for a second time with no external magnetic field so that exchange pinning is reduced and strong stress induced anisotropies of the pinned synthetic multiple layer align magnetization of the pinned synthetic multiple layer align a long axis of each of the magnetic tunnel junction elements.
    • 用于测量360°范围内的磁场角的磁场角传感器具有以多个角度定向的磁性隧道结元件。 磁场角传感器包括形成在具有反铁磁层和固定合成多层的基板上的多个磁性隧道结元件。 磁性隧道结元件被图案化以具有大的尺寸长宽比和大的各向异性的磁性隧道结元件的被钉合的合成多层。 磁性隧道结元件在存在强磁场的情况下在参考轴的方向上进行退火,并且在没有外部磁场的情况下第二次退火,从而减少了交换钉扎和强制应力引起的固定合成倍数的各向异性 钉扎合成多层的层对准磁化使每个磁性隧道结元件的长轴对齐。