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61. 发明申请

US20060141753A1 Epitaxial structure of gallium nitride series semiconductor device and process of manufacturing the same 审中-公开
标题翻译：氮化镓系列半导体器件的外延结构及其制造方法
公开(公告)号：US20060141753A1
公开(公告)日：2006-06-29
申请号：US11352204
申请日：2006-02-13
申请人： Schang-Jing Hon , Mu-Jen Lai
发明人： Schang-Jing Hon , Mu-Jen Lai
IPC分类号： H01L21/20
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L29/2003
摘要： An epitaxial stricture of a gallium nitride series semiconductor device and a process of forming the same are described. A first buffer layer of gallium nitride is epitaxially formed on a substrate at a first temperature. A second buffer layer of indium gallium nitride is formed on the first buffer layer at a second temperature. The second temperature increases up to a third temperature, during which precursors including In(CH3)3 and NH3 are used for surface treatment. A high-temperature gallium nitride is formed at the third temperature. The buffer layer and the way to form such a buffer layer allow improved crystal configuration and lowered defect density, thereby increasing the performance and service life of a semiconductor device.
摘要翻译：描述了氮化镓系半导体器件的外延截面及其形成工艺。在第一温度下在衬底上外延形成氮化镓的第一缓冲层。在第二温度下，在第一缓冲层上形成氮化铟镓的第二缓冲层。第二温度增加到第三温度，在此期间，使用包括In（CH 3 3 3）3 N 3和NH 3的前体进行表面处理。在第三温度下形成高温氮化镓。缓冲层和形成这种缓冲层的方式允许改善晶体结构并降低缺陷密度，从而提高半导体器件的性能和使用寿命。

62. 发明授权

US06992331B2 Gallium nitride based compound semiconductor light-emitting device 失效
标题翻译：氮化镓系化合物半导体发光元件
公开(公告)号：US06992331B2
公开(公告)日：2006-01-31
申请号：US10700536
申请日：2003-11-05
申请人： Schang-Jing Hon , Jenn-Bin Huang , Nai-Guann Yih
发明人： Schang-Jing Hon , Jenn-Bin Huang , Nai-Guann Yih
IPC分类号： H01L27/15
CPC分类号： H01L33/42 , H01L33/22 , H01L33/32
摘要： Disclosed are a GaN based compound semiconductor light emitting diode (LED) and a manufacturing method therefor. In the LED, a combination of a light extraction layer and an adaptive layer is formed over a multi-layer epitaxial structure,wherein the light extraction layer is a light transmissible impurity doped metal oxide and the adaptive layer is a Ni/Au layer used to enhance ohmic contact between the light extraction layer and the multi-layer epitaxial structure.
摘要翻译：公开了一种GaN基化合物半导体发光二极管（LED）及其制造方法。在LED中，在多层外延结构上形成光提取层和自适应层的组合，其中光提取层是透光的杂质掺杂金属氧化物，并且自适应层是用于增强光提取层和多层外延结构之间的欧姆接触。

63. 发明申请

US20050247942A1 Epitaxial structure of gallium nitrIde series semiconductor device and process of manufacturing the same 有权
标题翻译：镓氮化物半导体器件的外延结构及其制造方法
公开(公告)号：US20050247942A1
公开(公告)日：2005-11-10
申请号：US10838186
申请日：2004-05-05
申请人： Schang-Jing Hon , Mu-Jen Lai
发明人： Schang-Jing Hon , Mu-Jen Lai
IPC分类号： H01L21/20 , H01L21/205 , H01L29/20
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L29/2003
摘要： An epitaxial structure of a gallium nitride series semiconductor device and a process of forming the same are described. A first buffer layer of gallium nitride is epitaxially formed on a substrate at a first temperature. A second buffer layer of indium gallium nitride is formed on the first buffer layer at a second temperature. The second temperature increases up to a third temperature, during which precursors including In(CH3)3 and NH3 are used for surface treatment. A high-temperature gallium nitride is formed at the third temperature. The buffer layer and the way to form such a buffer layer allow improved crystal configuration and lowered defect density, thereby increasing the performance and service life of a semiconductor device.
摘要翻译：描述了氮化镓系半导体器件的外延结构及其形成工艺。在第一温度下在衬底上外延形成氮化镓的第一缓冲层。在第二温度下，在第一缓冲层上形成氮化铟镓的第二缓冲层。第二温度增加到第三温度，在此期间，使用包括In（CH 3 3 3）3 N 3和NH 3的前体进行表面处理。在第三温度下形成高温氮化镓。缓冲层和形成这种缓冲层的方式允许改善晶体结构并降低缺陷密度，从而提高半导体器件的性能和使用寿命。

64. 发明申请

US20050236632A1 Vertical electrode structure of gallium nitride based light emitting diode 审中-公开
标题翻译：氮化镓基发光二极管垂直电极结构
公开(公告)号：US20050236632A1
公开(公告)日：2005-10-27
申请号：US10986126
申请日：2004-11-12
申请人： Mu-Jen Lai , Schang-Jing Hon
发明人： Mu-Jen Lai , Schang-Jing Hon
IPC分类号： H01L29/22 , H01L33/00 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/42
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L33/387 , H01L33/405 , H01L33/42
摘要： A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection without the selective angle of incidence, thus increasing the coverage of the reflecting angles and further reflecting the light emitted from a light emitting layer effectively. In addition, the invented structure can also advance the function of heat elimination and the electrostatic discharge (ESD) so as to the increase the operating life of the component and to be applicable to the using under the high current driving. Moreover, the vertical electrode structure of the present invention is able to lower down the manufacturing square of the chip and facilitate the post stage of the conventional wire bonding process.
摘要翻译： GaN基发光二极管的垂直电极结构公开了构成垂直电极结构的GaN基发光二极管的氧化物窗层，其有效地降低了菲涅尔反射损失和全反射，进一步提高了发光效率。此外，进一步包括的金属反射层引起没有选择入射角的反射，从而增加反射角的覆盖，并进一步反射从发光层发射的光。此外，本发明的结构还可以提高散热和静电放电（ESD）的功能，从而增加部件的使用寿命并适用于高电流驱动下的使用。此外，本发明的垂直电极结构能够降低芯片的制造方形并促进常规引线接合工艺的后期。

65. 发明申请

US20050218801A1 Replaceable light emitting diode package assembly 审中-公开
标题翻译：可更换发光二极管封装组件
公开(公告)号：US20050218801A1
公开(公告)日：2005-10-06
申请号：US10813088
申请日：2004-03-31
申请人： Schang-Jing Hon , Mu-Jen Lai
发明人： Schang-Jing Hon , Mu-Jen Lai
IPC分类号： H01J1/62 , H01L33/50 , H01L33/00
CPC分类号： H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A replaceable light emitting diode (LED) package assembly has a separate structure and manufacturing process of the LED package. The LED die and a set of fluorescent material are located on a substrate. The fluorescent material device can be arranged selectively to match a required emission color according to the characteristic of wavelength of the LED die and not only is blended precisely to provide the required color but also reduces the rate of defects for the individual components of the assembly.
摘要翻译：可更换的发光二极管（LED）封装组件具有LED封装的单独结构和制造工艺。 LED芯片和一组荧光材料位于基板上。选择性地配置荧光体装置，以根据LED管芯的波长特性来匹配所需的发射颜色，不仅精确地混合以提供所需的颜色，而且降低组件的各个部件的缺陷率。

66. 发明授权

US06933160B2 Method for manufacturing of a vertical light emitting device structure 失效
标题翻译：垂直发光器件结构的制造方法
公开(公告)号：US06933160B2
公开(公告)日：2005-08-23
申请号：US10745601
申请日：2003-12-29
申请人： Schang-Jing Hon
发明人： Schang-Jing Hon
IPC分类号： H01L33/00 , H01L33/06 , H01L33/10 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/42 , H01L21/20 , H01L21/46
CPC分类号： H01L33/405 , H01L33/0079
摘要： Disclosed are a vertical GaN based light-emitting device (LED) structure and the manufacturing method thereof. In the structure and the corresponding method, a substrate unit having a mask is used to form a multi-layer epitaxial structure and the substrate and the multi-layer epitaxial structure are separated at the mask. After the multi-layer epitaxial structure is extracted, a metal reflector may be disposed thereunder. Next, a conductive substrate is bonded to the metal reflector. Next, an upper surface of the multi-layer structure is disposed with a p-electrode and a bottom side of the conductive substrate with an n-electrode whereby an vertical LED structure is formed.
摘要翻译：公开了一种垂直GaN基发光器件（LED）结构及其制造方法。在结构和相应的方法中，使用具有掩模的衬底单元以形成多层外延结构，并且衬底和多层外延结构在掩模处分离。在提取多层外延结构之后，可以在其下方布置金属反射器。接下来，将导电基板接合到金属反射器。接下来，多层结构的上表面设置有导电基板的p电极和底侧，其中n电极由此形成垂直LED结构。

67. 发明申请

US20050139840A1 Gallium-nitride based light emitting diode structure and fabrication thereof 有权
标题翻译：氮化镓基发光二极管结构及其制造
公开(公告)号：US20050139840A1
公开(公告)日：2005-06-30
申请号：US11020737
申请日：2004-12-22
申请人： Mu-Jen Lai , Schang-Jing Hon
发明人： Mu-Jen Lai , Schang-Jing Hon
IPC分类号： H01L27/15 , H01L33/12 , H01L33/32 , H01L33/42
CPC分类号： H01L33/42 , H01L33/32
摘要： A method for fabricating GaN-based LED is provided. The method first forms a first contact spreading metallic layer on top of the texturing surface of the p-type ohmic contact layer. The method then forms a second and a third contact spreading metallic layers on top of the first contact spreading layer. The p-type transparent metallic conductive layer composed of the three contact spreading metallic layers, after undergoing an alloying process within an oxygenic or nitrogenous environment under a high temperature, would have a superior conductivity. The p-type transparent metallic conductive layer could enhance the lateral contact uniformity between the p-type metallic electrode and the p-type ohmic contact layer, so as to avoid the localized light emission resulted from the uneven distribution of the second contact spreading metallic layer within the third contact spreading metallic layer. The GaN-based LED's working voltage and external quantum efficiency are also significantly improved.
摘要翻译：提供了一种用于制造GaN基LED的方法。该方法首先在p型欧姆接触层的纹理表面的顶部形成第一接触扩展金属层。该方法然后在第一接触扩散层的顶部上形成第二和第三接触扩展金属层。由三层接触扩散金属层构成的p型透明金属导电层，在高温下在含氧或含氮环境中进行合金化处理后，具有优异的导电性。 p型透明金属导电层可以增强p型金属电极和p型欧姆接触层之间的横向接触均匀性，以避免由于第二接触扩散金属层的不均匀分布引起的局部发光在第三接触扩散金属层内。 GaN基LED的工作电压和外部量子效率也得到显着提高。

68. 发明授权

US06911079B2 Method for reducing the resistivity of p-type II-VI and III-V semiconductors 失效
标题翻译：降低p型II-VI和III-V半导体电阻率的方法
公开(公告)号：US06911079B2
公开(公告)日：2005-06-28
申请号：US10127345
申请日：2002-04-19
申请人： Peter Rice , Schang-Jing Hon , Alexander Wang , Kevin O'Connor
发明人： Peter Rice , Schang-Jing Hon , Alexander Wang , Kevin O'Connor
IPC分类号： H01L21/326 , H01L33/00 , C30B29/40
CPC分类号： H01L21/326 , H01L33/0095
摘要： The resistivity of a p-doped III-V or a p-doped II-VI semiconductor material is reduced. The reduction of resistivity of the p-type III-V or a II-VI semiconductor material is achieved by applying an electric field to the semiconductor material. III-V nitride-based light emitting diodes are prepared.
摘要翻译： p掺杂的III-V或p掺杂的II-VI半导体材料的电阻率降低。通过向半导体材料施加电场来实现p型III-V或II-VI半导体材料的电阻率的降低。制备III-V族氮化物基发光二极管。

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