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    • 62. 发明专利
    • Electrophotographic photoreceptor for negative electrification
    • 电子电路用电子照相机
    • JP2003015337A
    • 2003-01-17
    • JP2002109394
    • 2002-04-11
    • Canon Incキヤノン株式会社
    • HOSOI KAZUTOHASHIZUME JUNICHIROOKAMURA TATSUJI
    • G03G5/14G03G5/08G03G5/10
    • PROBLEM TO BE SOLVED: To improve electrifying ability and sensitivity, to reduce optical memory and image flowing and to improve image quality in an amorphous silicon- based electrophotographic photoreceptor for negative electrification.
      SOLUTION: At least a lower part charge injection preventing layer 107 and a photoconductive layer 103 comprising a first photoconductive layer 104 and a second photoconductive layer 105 are laminated on an aluminum-based base body 101 on which a silicate film 108 is formed. The lower part charge injection preventing layer 107 is prepared by using a non-single crystal silicon film free from doped impurities, whose base material is silicon containing at least one of nitrogen, oxygen, hydrogen and halogens, and the photoconductive layer 103 is prepared by using a non-single crystal silicon film whose base material is silicon containing at least one of hydrogen and halogens. Further, the first photoconductive layer 104 is obtained by incorporating at least one kind of atom in the group 15 into the silicon in an amount of 0.01 to 10 atom ppm, and the second photoconductive layer 105 is obtained by incorporating at least one kind of atom of the group 13 into the silicon in an amount of 0 to 15 atom ppm.
      COPYRIGHT: (C)2003,JPO
    • 要解决的问题:为了提高充电能力和灵敏度,减少光学记忆和图像流动,并改善用于负电荷的非晶硅基电子照相感光体中的图像质量。 解决方案:在形成有硅酸盐膜108的铝基基体101上层叠至少一个下部电荷注入防止层107和包含第一光电导层104和第二光电导层105的光电导层103。 通过使用不含掺杂杂质的非单晶硅膜制备下部电荷注入防止层107,该掺杂杂质的基材是含有氮,氧,氢和卤素中的至少一种的硅,光电导层103由 使用基材为含有氢和卤素中的至少一种的硅的非单晶硅膜。 此外,第一光电导层104通过将基团15中的至少一种原子以0.01至10原子ppm的量掺入到硅中而获得,并且第二光电导层105通过引入至少一种原子 的组13以0至15原子ppm的量加入到硅中。