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61. 发明专利

JP2004333927A Electrophotographic apparatus 审中-公开
标题翻译：电子照相设备
公开(公告)号：JP2004333927A
公开(公告)日：2004-11-25
申请号：JP2003130388
申请日：2003-05-08
申请人： Canon Inc , キヤノン株式会社
发明人： KAWAMURA KUNIMASA , KARAKI TETSUYA , ABE YUKIHIRO
IPC分类号： G03G5/08 , G03G5/12
摘要： PROBLEM TO BE SOLVED: To provide a color electrophotographic apparatus which is disposed with a plurality of image forming sections equipped with photoreceptors of an amorphous silicon system and can stably supply color images of extremely high quality stably for a long period.
SOLUTION: The electrophotographic apparatus is disposed with the plurality of the image forming sections equipped with at least the electrophotographic photoreceptors having photoconductive layers and surface layers on conductive substrate, electrostatic charging means for uniformly electrostatically charging the photoreceptors, latent image forming means for forming electrostatic latent images on the photoreceptors by performing the image exposure, developing means for forming toner images by visualizing the electrostatic latent images by black and color toners on the photoreceptors, and transfer means for transferring the toner images to transfer materials. All of the photoconductive layers of the photoreceptors are composed of at least amorphous materials comprised of silicon atoms as parent bodies, and the surface roughness Ra within a range of 10 μm × 10 μm of the photoreceptor surface ranges from 10 to 80 nm and further at least one photoreceptor among the photoreceptors arranged in the plurality has the surface roughness Ra greater than that of the other photoreceptors.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种配置有配备有非晶硅系统的感光体的多个成像部分的彩色电子照相设备，并且能够长时间稳定地稳定地提供极高质量的彩色图像。解决方案：电子照相设备被布置成使多个图像形成部分至少配备有在导电基板上具有光电导层和表面层的电子照相感光体，用于均匀静电对感光体充电的静电充电装置，用于通过进行图像曝光在感光体上形成静电潜像，用于通过使感光体上的黑色和彩色调色剂使静电潜像可视化来形成调色剂图像的显影装置和用于将调色剂图像转印到转印材料的转印装置。感光体的全部光导层由至少由作为母体的硅原子构成的非晶质构成，感光体表面的10μm×10μm范围内的表面粗糙度Ra为10〜80nm，进一步布置在多个中的感光体中的至少一个感光体的表面粗糙度Ra大于其它感光体的表面粗糙度Ra。版权所有（C）2005，JPO＆NCIPI

62. 发明专利

JP2004133121A Method for manufacturing electrophotographic photoreceptor 审中-公开
公开(公告)号：JP2004133121A
公开(公告)日：2004-04-30
申请号：JP2002296323
申请日：2002-10-09
申请人： Canon Inc , キヤノン株式会社
发明人： KARAKI TETSUYA , KAWAMURA KUNIMASA , ABE YUKIHIRO
IPC分类号： G03G5/082 , C23C16/24
摘要： PROBLEM TO BE SOLVED: To provide an amorphous silicon-base electrophotographic photoreceptor drum which ensures little unevenness in image density and few image defects.
SOLUTION: The electrophotographic photoreceptor is manufactured using a vacuum treating apparatus comprising: at least a reaction vessel which can be depressurized; a means to house a conductive substrate in the reaction vessel; a means to introduce a gas into the reaction vessel; a means to supply high-frequency power for generating plasma in the reaction vessel; and an exhaust means to exhaust the gas from the reaction vessel through an exhaust pipe. In the method for manufacturing the amorphous silicon-base electrophotographic photoreceptor by forming at least a photoconductive layer comprising a silicon-base non-monocrystalline material and a surface layer containing at least silicon atoms and carbon atoms in this order on the substrate and carrying out annealing, when temperature in the formation of the photoconductive layer is represented by T1 (°C), temperature in the formation of the surface layer by T2 (°C), and temperature in the annealing by T3 (°C), the relation of T1

63. 发明专利

JP2003313668A Process for fabricating semiconductor device 审中-公开
标题翻译：制造半导体器件的工艺
公开(公告)号：JP2003313668A
公开(公告)日：2003-11-06
申请号：JP2002122890
申请日：2002-04-24
申请人： Canon Inc , キヤノン株式会社
发明人： NIINO HIROAKI , KAWAMURA KUNIMASA , ABE YUKIHIRO
IPC分类号： G03G5/08 , C23C16/52
摘要： PROBLEM TO BE SOLVED: To form a deposited film with uniform thickness and quality and few defect on a substrate with a large area at a high processing speed in a process for fabricating a semiconductor device wherein the deposited film is formed on the substrate by plasmanizing a raw material gas by high-frequency power. SOLUTION: As the first step, a first layer is formed on a support employing a predetermined raw material gas flow rate and high-frequency power. As a subsequent step, a second layer is formed employing a raw material gas flow rate and high-frequency power which are different from those employed for forming the first layer. Between the steps for forming the first and second layers, a transition step is inserted wherein the raw material gas flow rate and the high-frequency power are gradually shifted from those employed for forming the first layer to those employed for forming the second layer. In the transition step, the shiftings of the high-frequency power and the raw material gas flow rate are initiated at different timings. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：在半导体器件的制造工艺中，在沉积膜形成在衬底上的过程中，以高处理速度在具有大面积的衬底的基板上形成具有均匀的厚度和质量以及缺陷少的沉积膜通过高频电源对原料气体进行等离子体化处理。解决方案：作为第一步，使用预定的原料气体流量和高频功率在支撑体上形成第一层。作为后续步骤，使用不同于用于形成第一层的原料气体流速和高频功率形成第二层。在用于形成第一层和第二层的步骤之间，插入过渡步骤，其中原料气体流速和高频功率从用于形成第一层的材料气体流速和高频功率逐渐偏离到用于形成第二层的那些。在过渡步骤中，高频功率和原料气体流量的偏移在不同的定时开始。版权所有（C）2004，JPO

64. 发明专利

JP2003073836A Method and apparatus for vacuum treatment 审中-公开
标题翻译：用于真空治疗的方法和装置
公开(公告)号：JP2003073836A
公开(公告)日：2003-03-12
申请号：JP2001257917
申请日：2001-08-28
申请人： Canon Inc , キヤノン株式会社
发明人： ABE YUKIHIRO , AOKI MAKOTO , MURAYAMA HITOSHI
IPC分类号： H05H1/46 , B01J3/00 , B01J19/08 , C23C16/509 , C23C16/52 , G03G5/08 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method for vacuum treatment, which can improve operability for matching adjustment, and reproducibility of the matching condition, and shorten adjusting time for matching, when performing vacuum treatment while applying several high-frequency powers at the same time, and provide an apparatus for vacuum treatment.
SOLUTION: In the method for vacuum treatment, which mounts a substrate to be treated 102 in a reaction vessel 101 capable of being depressurized, introduces a source gas, generates plasma of the source gas by a high-frequency power, and treats the substrate to be treated, this method is characterized by supplying several high-frequency powers to an electrode 109a through matching circuits 107a and 107b, detecting at least either the state of the several matching circuits or the matching state of the high-frequency power, and adjusting the several matching circuits with a matching control circuit 111 through feeding back the detected results.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种真空处理方法，其可以提高匹配调整的可操作性和匹配条件的再现性，并且缩短用于匹配的调整时间，同时在同时施加若干高频功率的同时进行真空处理并提供真空处理装置。解决方案：在真空处理方法中，将待处理基板102安装在能够减压的反应容器101中，引入源气体，通过高频电力产生源气体的等离子体，并将基板处理该方法的特征在于，通过匹配电路107a和107b向电极109a提供几个高频功率，检测几个匹配电路的状态或高频功率的匹配状态中的至少一个，并且调整具有匹配控制电路111的几个匹配电路，通过反馈检测结果。

65. 发明专利

JP2003034871A Vacuum treatment method 审中-公开
标题翻译：真空处理方法
公开(公告)号：JP2003034871A
公开(公告)日：2003-02-07
申请号：JP2001222788
申请日：2001-07-24
申请人： Canon Inc , キヤノン株式会社
发明人： AOKI MAKOTO , ABE YUKIHIRO , MURAYAMA HITOSHI
IPC分类号： H05H1/46 , B01J19/08 , C23C16/507 , G03G5/08
摘要： PROBLEM TO BE SOLVED: To improve a vacuum treatment speed, vacuum treatment characteristics, and further uniformity of the vacuum treatment characteristics to an extremely high level, in a vacuum treatment method for treating a substrate with plasma formed by a high-frequency power in a reaction vessel. SOLUTION: This vacuum treatment method having a high treatment speed for giving the film high uniformity and adequate characteristics, comprises supplying at least two high-frequency powers having different frequencies f1 and f2 of 10 MHz or higher but 250 MHz or lower, and making the power strength of the greatest peak out of several peaks, which exist in a frequency spectrum detected in a reaction vessel and do not correspond to f1 and f2 of the supplied high-frequency power, to be in the range of -30 db or more but -3 db or less against an power strength of a lower peak out of the peaks corresponding to f1 and f2.
摘要翻译：要解决的问题：为了在真空处理方法中提高真空处理速度，真空处理特性以及真空处理特性的进一步均匀性，在用于处理具有等离子体的等离子体的基板的高真空处理方法中，反应容器解决方案：具有高处理速度的用于赋予膜高均匀性和适当特性的真空处理方法包括提供具有10MHz或更高但是250MHz或更低的频率f1和f2的不同频率的至少两个高频功率，并使在反应容器中检测到的频谱中存在并且不对应于所提供的高频功率的f1和f2的几个峰值中的最大峰值的功率强度在-30db以上的范围内，但是在-30db以上的范围内， -3dB或更小，相对于对应于f1和f2的峰值中的较低峰值的功率强度。

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