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61. 发明公开

EP4308330A1 PROCEDE DE FABRICATION D'UNE PIECE EN ALLIAGE D'ALUMINIUM PAR FUSION LASER SUR LIT DE POUDRES 无效
公开(公告)号：EP4308330A1
公开(公告)日：2024-01-24
申请号：EP22714483.9
申请日：2022-03-17
申请人： Commissariat à l'énergie atomique et aux énergies alternatives
发明人： OPPRECHT, Mathieu , GARANDET, Jean-Paul , ROUX, Guilhem
IPC分类号： B22F10/28 , B22F10/34 , B22F10/368 , B22F10/38 , B33Y10/00 , B33Y50/02 , B33Y70/00 , C22C1/04 , C22C21/00 , C22F1/04

63. 发明公开

EP3852958A1 DISPOSITIF DE FABRICATION ADDITIVE PRESENTANT UNE ZONE FONDUE STABILISÉE 审中-实审
公开(公告)号：EP3852958A1
公开(公告)日：2021-07-28
申请号：EP19813629.3
申请日：2019-10-24
申请人： Commissariat à l'énergie atomique et aux énergies alternatives
发明人： GARANDET, Jean-Paul , PENOT, Jean-Daniel
IPC分类号： B22F3/105 , B33Y30/00 , B33Y50/02 , B23K26/342

64. 发明授权

EP3238276B1 PASSIVATION OF METALLIC IMPURITIES IN A SINGLE CRYSTALLINE REGION BY HYDROGENATION 有权
公开(公告)号：EP3238276B1
公开(公告)日：2019-07-31
申请号：EP14851441.7
申请日：2014-12-22
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： DUBOIS, Sébastien , ENJALBERT, Nicolas , GARANDET, Jean-Paul , MARTEL, Benoît , TURMAGAMBETOV, Tleuzhan , VEIRMAN, Jordi
IPC分类号： H01L31/18

65. 发明公开

EP3218533A1 PROCEDE DE FABRICATION D'UN LINGOT DE SILICIUM MONOCRISTALLIN DE TYPE N 审中-公开
公开(公告)号：EP3218533A1
公开(公告)日：2017-09-20
申请号：EP15804688.8
申请日：2015-11-09
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： DUBOIS, Sébastien , DANEL, Adrien , GARANDET, Jean-Paul , MARTEL, Benoît , VEIRMAN, Jordi
IPC分类号： C30B15/02 , C30B29/06 , C30B15/20
CPC分类号： C30B29/06 , C30B15/02 , C30B15/20
摘要： The present invention relates to a method for manufacturing an n-type monocrystalline silicon ingot, with monitored concentration of oxygen-based thermal donors, comprising at least the following steps: (i) providing a bath of molten silicon comprising one or more n-type doping agents, said bath being supplemented at least with germanium (Ge) and/or tin (Sn) with levels that are adapted such as to inhibit the formation of all or part of the thermal donors in the expected silicon ingot; and (ii) drawing the silicon ingot from the bath of step (i) by a Czochralski drawing method, the initial drawing speed V
1 being reduced to a speed V
2 = V
1 /b, wherein b is between 10 and 1.2, when the solidified silicon fraction f
s reaches a predetermined critical value. The invention also relates to a monocrystalline silicon ingot obtained according to said method and to the use thereof for manufacturing a photovoltaic cell by a low-temperature method.
摘要翻译：本发明涉及一种用于制造n型单晶硅锭的方法，其具有监测的氧基热施主浓度，其至少包括以下步骤：（i）提供包含一种或多种n型掺杂剂，所述浴至少补充有锗（Ge）和/或锡（Sn），所述锗（Ge）和/或锡（Sn）的水平适合于抑制在所期望的硅锭中形成全部或部分热施主; 和（ii）通过切克劳斯基拉制方法从步骤（i）的浴中拉制硅锭，初始拉伸速度V1降低至V2 = V1 / b，其中b在10和1.2之间，当固化硅分数fs达到预定的临界值。本发明还涉及根据所述方法获得的单晶硅锭及其用于通过低温方法制造光伏电池的用途。

66. 发明公开

EP3146314A1 DISPOSITIF D'ANALYSE D'UN MÉTAL EN FUSION OXYDABLE PAR TECHNIQUE LIBS 有权转让
标题翻译： VORRICHTUNG ZUR ANALYZE EINES OXIDIERBAREN GESCHMOLZENEN METALLS MIT EINER LIBS-TECHNIK
公开(公告)号：EP3146314A1
公开(公告)日：2017-03-29
申请号：EP15726047.2
申请日：2015-05-20
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , Université Pierre et Marie Curie (Paris 6)
发明人： BENMANSOUR, Malek , BENRABBAH, Rafik , GARANDET, Jean-Paul , MORVAN, Daniel
IPC分类号： G01N21/71 , G01N21/85
CPC分类号： G01N21/718 , G01J3/443 , G01N21/8507 , G01N33/20
摘要： The main subject of the invention is a device (1), for analysing at least one oxidisable molten metal (2) using a LIBS technique, comprising LIBS analysing means (3), characterised in that it furthermore comprises mechanical rotary means (4, 5) for stirring a liquid bath of said at least one oxidisable molten metal (2), the mechanical stirring means (4, 5) comprising a central section (4), intended to be positioned above the liquid bath of said at least one oxidisable molten metal (2), containing an internal cavity (6) forming an analysis chamber, the central section (4) comprising a first end (4a) connected to the LIBS analysing means (3), and a plurality of mechanical stirring paddles (5) that are intended to be partially submerged in the liquid bath of said at least one oxidisable molten metal (2) and that are connected to a second end (4b) of the central section (4) opposite the first end (4a) of the central section (4), the LIBS analysing means (3) being configured to allow the surface (S) of said at least one oxidisable molten metal (2) located in the portion plumb with the internal cavity (6) of the central portion (4) to be analysed.
摘要翻译：一种用于使用LIBS技术分析至少一种可氧化熔融金属的装置，包括：LIBS分析仪; 搅拌所述至少一种可氧化熔融金属的液体浴并且包括中心部分的机械旋转机构，所述中间部分位于所述至少一种可氧化熔融金属的液槽上方，包括形成分析室的内部空腔，所述中心部分该部分包括连接到LIBS分析器的第一端，以及多个机械搅拌桨，其部分地浸没在所述至少一种可氧化熔融金属的液浴中，并且连接到与第一端相对的中心部分的第二端中心部分的LIBS分析器被配置为允许位于具有中心部分的内腔的部分铅中的至少一个可氧化熔融金属的表面被分析。

67. 发明公开

EP3052444A1 PROCÉDÉ POUR LA DÉSOXYDATION DU SILICIUM 有权
标题翻译： VERFAHREN ZUR脱氧剂
公开(公告)号：EP3052444A1
公开(公告)日：2016-08-10
申请号：EP14798954.5
申请日：2014-09-30
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： BENMANSOUR, Malek , DARWICHE, Sarah , GARANDET, Jean-Paul , PELLETIER, David
IPC分类号： C01B33/037
CPC分类号： C01B33/037 , B01J19/088 , B01J37/349 , H05H1/26 , H05H1/42
摘要： The invention relates to a process of use for deoxidizing silicon particles comprising at least the steps consisting in: (i) having surface-oxidized silicon particles that have a mean size of less than or equal to 10 µm, (ii) formulating said particles into the form of aggregates having a mean size ranging from 20 to 300 µm, (iii) bringing said aggregates from step (ii) into contact with a thermal plasma conveying hydrogen radicals under conditions suitable for the deoxidation thereof and for the non-evaporation thereof, and (iv) recovering a material deoxidized according to step (iii) in a liquid silicon bath.
摘要翻译：本发明涉及一种用于使硅颗粒脱氧的方法，至少包括以下步骤：（i）具有平均尺寸小于或等于10μm的表面氧化硅颗粒，（ii）将所述颗粒配制成平均粒度范围为20-300μm的聚集体的形式，（iii）使来自步骤（ii）的聚集体与适于其脱氧的条件下的热等离子体输送氢原子和不蒸发相接触，和（iv）在液体硅浴中回收根据步骤（iii）脱氧的材料。

68. 发明公开

EP3046896A1 SUBSTRAT POUR LA SOLIDIFICATION DE LINGOT DE SILICIUM 审中-公开
标题翻译：坩埚固结的硅锭的
公开(公告)号：EP3046896A1
公开(公告)日：2016-07-27
申请号：EP14789884.5
申请日：2014-09-12
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： GARANDET, Jean-Paul , CAMEL, Denis , DREVET, Béatrice , EUSTATHOPOULOS, Nicolas , HUGUET, Charles , TESTARD, Johann , VOYTOVYCH, Rayisa
IPC分类号： C04B41/89 , C30B11/00 , C30B15/10
CPC分类号： C30B11/002 , B05D7/50 , C01B33/021 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2111/00879 , C30B29/06 , C30B35/002 , C04B35/565 , C04B35/584 , C04B35/14 , C04B35/522 , C04B41/4519 , C04B41/4539 , C04B41/455 , C04B41/4582 , C04B41/5035 , C04B41/5066 , C04B41/457
摘要： The invention relates to a substrate, in particular intended for contact with liquid silicon, characterised in that it is at least partially surface-coated with a multilayer coating formed by: at least one layer, known as the adhesion layer, contiguous with the substrate, having an open porosity of at least 30%, and formed of a material comprising silica and silicon nitride, said material having a silica content of between 10 wt.-% and 55 wt.-% in relation to the total weight thereof; and a layer different from the adhesion layer, known as the release layer, located on the surface of the adhesion layer and formed of a material comprising silica and silicon nitride, said material having a silica content of between 2 wt.-% and 10 wt.-% in relation to the total weight thereof.

69. 发明公开

EP2965350A1 SUBSTRAT SEMI-CONDUCTEUR MONOLITHIQUE À BASE DE SILICIUM, DIVISÉ EN SOUS-CELLULES 审中-公开
标题翻译：单独使用不锈钢制品
公开(公告)号：EP2965350A1
公开(公告)日：2016-01-13
申请号：EP14713264.1
申请日：2014-03-06
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： VESCHETTI, Yannick , DUBOIS, Sébastien , ENJALBERT, Nicolas , GARANDET, Jean-Paul , VEIRMAN, Jordi
IPC分类号： H01L21/761
CPC分类号： H01L21/761 , C30B29/06 , C30B33/02 , H01L31/03529 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a monolithic semi-conductor substrate (10) based on silicon, vertically divided into sub-cells that are isolated from each other, comprising a type-p or type-n silicon base (1) having an interstitial oxygen concentration of between 1017 and 2.1018 cm"3, and including, on at least one of the faces thereof, n+ and/or p+ overdoped boxes that are non-contiguous in relation to each other, characterised in that at least one substrate region, inserted between two successive boxes and extending over the entire thickness of the substrate, is an electrical insulation region (3) having a thermal donor concentration based on interstitial oxygen different from that of the base (1). The invention also relates to methods for producing such a substrate.
摘要翻译：本发明涉及一种基于硅的整体式半导体衬底（10），其垂直分成彼此分离的子电池，其包含p型或n型硅基（1），其间隙氧浓度为在1017和2.1018cm 3之间，并且在其至少一个面上包括相对于彼此不连续的n +和/或p +超掺杂盒，其特征在于，至少一个衬底区域插入在两个连续的盒子并且在衬底的整个厚度上延伸，是具有基于不同于基底（1）的间隙氧的热供体浓度的电绝缘区域（3），本发明还涉及制造这种衬底的方法。

70. 发明公开

EP2761055A1 STRUCTURE MULTICOUCHE OFFRANT UNE ETANCHEITE AUX GAZ AMELIOREE 有权
标题翻译：具有改进的气体泄漏多层结构
公开(公告)号：EP2761055A1
公开(公告)日：2014-08-06
申请号：EP12761635.7
申请日：2012-09-24
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： CROS, Stéphane , ALBEROLA, Nicole , GARANDET, Jean-Paul , MORLIER, Arnaud
IPC分类号： C23C18/14 , B32B7/02 , C23C18/12
CPC分类号： C23C18/122 , B32B2307/7244 , C23C18/1204 , C23C18/1212 , C23C18/1225 , C23C18/14 , H01L21/02222 , H01L31/0392 , H01L31/03923 , H01L31/048 , H01L31/0481 , H01L51/107 , H01L51/5253 , H01L51/5256 , Y02E10/541 , Y02P70/521 , Y10T428/2495 , Y10T428/24975
摘要： The present application describes a multilayer structure and also the process for obtaining same. The multilayer structure comprises a substrate (2), and a first stack of a layer (A) of SiO
2 and a layer (B) made of material of SiO
x N
y H
z type positioned between the substrate (2) and the layer (A) of SiO
2 , in which the layer (A) of SiO
2 and the layer (B) made of material of SiO
x N
y H
z type have thicknesses (e
B , e
A ) such that the thickness of the layer (A) of SiO
2 is less than or equal to 60 nm, the thickness of the layer (B) made of material of SiO
x N
y H
z type (e
B ) is more than two times the thickness (e
A ) of the layer (A) of SiO
2 and the sum of the thicknesses of the layer (A) of SiO
2 and of the layer (B) made of material of SiO
x NyH
z type is between 100 nm and 500 nm and in which z is strictly positive and is strictly less than the ratio (x+y)/5, advantageously z is strictly less than the ratio (x+y)/10. The process comprises the conversion of a liquid inorganic precursor of perhydropolysilazane type by irradiation by VUV rays at a wavelength less than or equal to 220 nm and ultraviolet radiation at a wavelength greater than or equal to 220 nm.

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