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61. 发明授权

US06321983B1 Method for managing life cycles and system for the same 失效
标题翻译：管理生命周期和系统的方法
公开(公告)号：US06321983B1
公开(公告)日：2001-11-27
申请号：US09360687
申请日：1999-07-26
申请人： Takahiro Katayanagi , Katsufumi Mihara , Naoki Takahashi , Akira Ishibashi , Shuji Soga , Tetsuo Kusuzaki
发明人： Takahiro Katayanagi , Katsufumi Mihara , Naoki Takahashi , Akira Ishibashi , Shuji Soga , Tetsuo Kusuzaki
IPC分类号： G06K500
CPC分类号： G06Q10/06 , B29B2017/0089
摘要： A method and system for managing the overall life cycle of a product from its manufacture to its destruction or recycling. To the product is affixed a storage medium storing a product identifier uniquely identifying the product and information about the parts that are contained in the product. At each site that the product passes through during its life cycle, product life cycle information is recorded in the storage medium affixed to the product. When the product is to be destroyed or recycled, the information stored in the recording medium is used to determine the method for destroying or recycling. The product is then destroyed or recycled according to this method.
摘要翻译：一种用于管理产品从其制造到销毁或再循环的整个生命周期的方法和系统。产品附有存储产品标识符的存储介质，该产品标识符唯一地标识产品和关于产品中包含的部件的信息。在产品在其生命周期内通过的每个场所，产品生命周期信息都记录在产品附带的存储介质中。当产品被破坏或回收时，存储在记录介质中的信息用于确定销毁或回收的方法。然后根据这种方法将产品销毁或回收。

62. 发明授权

US5898662A Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus 失效
标题翻译：半导体发光器件，其制造方法和光学记录和/或再现装置
公开(公告)号：US5898662A
公开(公告)日：1999-04-27
申请号：US967095
申请日：1997-11-10
申请人： Akira Ishibashi , Satoshi Taniguchi , Tomonori Hino , Takashi Kobayashi , Kazushi Nakano , Norikazu Nakayama
发明人： Akira Ishibashi , Satoshi Taniguchi , Tomonori Hino , Takashi Kobayashi , Kazushi Nakano , Norikazu Nakayama
IPC分类号： H01L33/00 , H01L33/02 , H01L33/28 , H01S5/042 , H01S5/32 , H01S5/327 , H01S5/347 , H01S3/18
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0087 , H01L33/025 , H01S5/347 , H01S2301/173 , H01S5/0421 , H01S5/3203 , H01S5/327
摘要： A semiconductor light emitting device comprises: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; a p-type cladding layer on the active layer: and a p-type contact layer on the p-type cladding layer, the n-type cladding layer, the active layer, the p-type cladding layer and the p-type contact layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that at least the active layer has undulations and at least the p-type layer is flat. A method for manufacturing a semiconductor light emitting device having: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; and a p-type cladding layer on the active layer, the n-type cladding layer, the active layer and the p-type cladding layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that the n-type cladding layer, the active layer and said p-type cladding layer are grown by varying, for the respective layers, the ratio of the molecular beam intensity of the group VI element relative to the molecular beam intensity of the group II element.
摘要翻译：一种半导体发光器件包括：化合物半导体衬底; 在化合物半导体衬底上的n型覆层; 在n型包覆层上的有源层; 有源层上的p型覆层和p型覆层的p型接触层，n型包覆层，有源层，p型包覆层和p型接触层由含有选自Zn，Cd，Mg，Hg和Be中的II族元素中的至少一种的II-VI化合物半导体和选自S，Se，Te中的至少一种VI族元素中的至少一种和O，其特征在于至少所述活性层具有起伏并且至少所述p型层是平坦的。一种半导体发光器件的制造方法，其具有：化合物半导体基板; 在化合物半导体衬底上的n型覆层; 在n型包覆层上的有源层; 和p型包覆层，n型包覆层，有源层和p型覆层由含有选自以下的II族元素中的至少一种的II-VI族化合物半导体构成：的Zn，Cd，Mg，Hg和Be以及选自S，Se，Te和O的VI族元素中的至少一种，其特征在于，所述n型包覆层，所述有源层和所述p型通过对于各层改变VI族元素的分子束强度相对于II族元素的分子束强度的比例，生长包覆层。

63. 发明授权

US5764672A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5764672A
公开(公告)日：1998-06-09
申请号：US829064
申请日：1997-03-31
申请人： Masakazu Ukita , Akira Ishibashi
发明人： Masakazu Ukita , Akira Ishibashi
IPC分类号： H01S5/00 , H01S5/024 , H01S5/028 , H01S5/042 , H01S5/062 , H01S5/323 , H01S5/327 , H01S5/343 , H01S5/347 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/024 , H01S5/06209 , H01S5/327 , H01S5/34333 , H01S5/347 , H01S5/0224 , H01S5/028 , H01S5/0421
摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current I.sub.th (A), a threshold voltage V.sub.th (V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance R.sub.S (.OMEGA.) of the diode after the rising, a thermal resistance R.sub.t (K/W) and a characteristic temperature T.sub.0 (K). When two amounts .alpha. and .beta. are defined by: .alpha..ident.(R.sub.t /T.sub.0)I.sub.th V.sub.th .beta..ident.(R.sub.t /T.sub.0)R.sub.S I.sub.th.sup.2 the point (.alpha., .beta.) exists in an area on the .alpha.-.beta. plane surrounded by the straight line .alpha.=0, the straight line .beta.=0, and the curve ((21n t-1)/t, (1-ln t)/t.sup.2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.
摘要翻译：半导体激光器包括：第一导电类型的第一包层; 堆叠在所述第一包层上的有源层; 以及层叠在有源层上的第二导电类型的第二包覆层。第一包层，有源层和第二包层由II-VI化合物半导体制成。脉冲振荡发生在阈值电流Ith（A），由第一包层，有源层和第二包层组成的二极管的阈值电压Vth（V），二极管的差分电阻RS（OMEGA）上升之后，具有热阻Rt（K / W）和特征温度T0（K）。当α和β的两个量定义为：α=（Rt / T0）IthVthβ=（Rt / T0）RSIth2点（α，β）存在于由直线α= 0包围的α-β平面上的区域，直线β= 0以及具有t作为参数的曲线（（21n t-1）/ t，（1-ln t）/ t2）。半导体激光器可以包括在第一包层和有源层之间的第一光波导层，并且在第二包层和有源层之间包括第二光波导层，第一光波导层和第二光波导层由 II-VI化合物半导体。制造第一包层和第二包层的II-VI化合物半导体可以是ZnMgSSe化合物半导体。提供了使用II-VI化合物半导体并且在包括室温在内的高温下具有连续振荡能力的半导体激光器。

64. 发明授权

US5635306A Honeycomb panel and process for producing same 失效
标题翻译：蜂窝板及其制造方法
公开(公告)号：US5635306A
公开(公告)日：1997-06-03
申请号：US485884
申请日：1995-06-07
申请人： Katsuhiro Minamida , Masashi Oikawa , Atsushi Sugihashi , Akira Ishibashi , Mamoru Takeda
发明人： Katsuhiro Minamida , Masashi Oikawa , Atsushi Sugihashi , Akira Ishibashi , Mamoru Takeda
IPC分类号： B21D47/00 , B23K26/20 , B32B3/12 , E04C2/34 , B32B3/02 , B32B3/28 , B23K26/00
CPC分类号： E04C2/3405 , B21D47/00 , B23K26/22 , B23K26/242 , B23K26/244 , B23K26/26 , B32B3/12 , B23K2201/02 , E04C2002/3455 , E04C2002/3494 , Y10T29/49629 , Y10T428/1234
摘要： The present invention is a honeycomb panel comprising metal face sheets respectively disposed on upper and lower faces of said honeycomb core characterized in that said honeycomb panel has a metal side plate disposed on at least one side face thereof, for mutually connecting honeycomb panels to each other, and a process for producing a honeycomb panel, said process characterized by comprising the steps of: welding a corrugated honeycomb core at an end face of its corrugation to a side plate along the end face of said corrugation; welding the honeycomb core at top portions of its corrugation to an upper face sheet from the side of the honeycomb core by means of an energy beam; welding bottom portions of the corrugation of the honeycomb core to a lower face sheet from the side of the face sheet by means of an energy beam; and welding the face sheets to the side plate before or after welding the honeycomb core to the face sheets.
摘要翻译：本发明是一种蜂窝板，其包括分别设置在所述蜂窝芯的上表面和下表面上的金属面板，其特征在于，所述蜂窝板具有设置在其至少一个侧面上的金属侧板，用于将蜂窝板彼此相互连接以及蜂窝板的制造方法，其特征在于，包括以下步骤：沿着所述波纹的端面将波纹状蜂窝芯在其波纹端面焊接到侧板上; 通过能量束从蜂窝芯的侧面将蜂窝状芯在其波纹的顶部处焊接到上表面片; 通过能量束将蜂窝芯的波纹的底部部分从面板的侧面焊接到下表面片; 并且在将蜂窝芯焊接到面板之前或之后将面板焊接到侧板。

65. 发明授权

US5633514A Semiconductor light emitting device with lattice-matching and lattice-mismatching 失效
标题翻译：具有晶格匹配和晶格失配的半导体发光器件
公开(公告)号：US5633514A
公开(公告)日：1997-05-27
申请号：US570376
申请日：1995-12-11
申请人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
发明人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
IPC分类号： H01L33/00 , H01L33/28 , H01S5/32 , H01S5/327
CPC分类号： H01L33/28 , H01L33/0087 , H01S5/327 , H01S5/3201
摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of group II elements such as Zn, Hg, Cd, Mg and at least one kind of group VI elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.Aa/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).
摘要翻译：半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4）沉积在有源层（4）上的第二导电类型的第二包覆层（6）。第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素和至少一种VI族元素的II / VI族化合物半导体制成，作为S，Se，Te。在第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTAAa/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

66. 发明授权

US5567960A II/VI-compound semiconductor light emitting device 失效
标题翻译： II / VI化合物半导体发光器件
公开(公告)号：US5567960A
公开(公告)日：1996-10-22
申请号：US429850
申请日：1995-04-27
申请人： Akira Ishibashi , Satoshi Ito , Hiroyuki Okuyama , Kazushi Nakano , Kenji Kondo , Reiko Takeishi
发明人： Akira Ishibashi , Satoshi Ito , Hiroyuki Okuyama , Kazushi Nakano , Kenji Kondo , Reiko Takeishi
IPC分类号： H01L33/14 , H01L33/20 , H01L33/28 , H01S5/00 , H01S5/327 , H01L33/00 , H01S3/19
CPC分类号： H01L33/28 , H01S5/327
摘要： A lifetime of a II/VI-compound semiconductor light emitting device can be extended. The II/VI-compound semiconductor light emitting device includes an active layer (4) and a p-side cladding layer (6). An active-layer side portion (26) of the p-side cladding layer (6) is formed as a lightly impurity-doped region or a non-doped region.
摘要翻译： II / VI化合物半导体发光器件的寿命可以延长。 II / VI化合物半导体发光器件包括有源层（4）和p侧覆层（6）。 p侧覆层（6）的有源层侧部（26）形成为轻掺杂区域或非掺杂区域。

67. 发明授权

US5093384A Heat insulator made of shape memory polymer foam 失效
标题翻译：形状记忆聚合物泡沫的绝热体
公开(公告)号：US5093384A
公开(公告)日：1992-03-03
申请号：US423190
申请日：1989-10-18
申请人： Shunichi Hayashi , Akira Ishibashi , Tetsuyoshi Ikenoue
发明人： Shunichi Hayashi , Akira Ishibashi , Tetsuyoshi Ikenoue
IPC分类号： B29C61/06 , C08G18/10 , C08G18/65 , C08J9/04
CPC分类号： C08G18/10 , C08G2101/00 , C08G2250/00 , C08G2280/00
摘要： A heat insulator made of shape memory polymer foam which has good moldability and changes greatly in elastic modulus above and below its glass transition point, and a heat insulator as mentioned above in which the polymer foam is polyurethane produced by prepolymer process from a composition containing a blowing agent, said composition being composed of a difunctional diisocyanate, a difunctional polyol, and a difunctional chain extender containing active hydrogen in a molar ratio of 2.00-1.10:1.00:1.00-0.10, said polyurethane containing approximately equal amounts of NCO groups and OH groups at the terminals of the molecular chains and having a glass transition point of -50.degree. to 60.degree. C. and crystallinity of 3 to 50 wt %.

68. 发明授权

US4488100A Motor controller 失效
标题翻译：电机控制器
公开(公告)号：US4488100A
公开(公告)日：1984-12-11
申请号：US457511
申请日：1983-01-12
申请人： Hiroshi Fujii , Akira Ishibashi , Kenji Nando
发明人： Hiroshi Fujii , Akira Ishibashi , Kenji Nando
IPC分类号： H02P27/06 , H02M7/48 , H02P4/00 , H02P5/40
CPC分类号： H02M7/53873 , H02P4/00
摘要： In recent years the induction motor speed has come to be controlled by changing the frequency and voltage of the commercial power supply by means of an invertor. The frequency of the commercial power supply, however, differs from country to country and even in the same country differs from region to region. If the motor controller designed for a supply frequency of f.sub.L is operated connected to the supply having a frequency f.sub.H higher than f.sub.L, an overvoltage will result. Conversely, if the motor controller designed for a supply frequency of f.sub.H is connected to the supply with a frequency f.sub.L lower than f.sub.H, then a sufficient torque cannot be obtained. To eliminate the above drawback, the present invention detects the input frequency of the motor controller and selects or calculates control constants in accordance with the detected value so as to enable stable operation even when the input frequency changes.
摘要翻译：近年来，通过用逆变器改变商用电源的频率和电压，可以控制感应电动机速度。然而，商业电力供应的频率因国家而异，即使在同一个国家，区域也不尽相同。如果将供电频率fL设计的电动机控制器连接到频率fH高于fL的电源，则会产生过电压。相反，如果将供电频率为fH的电机控制器连接到频率fL低于fH的电源，则不能获得足够的转矩。为了消除上述缺陷，本发明检测电动机控制器的输入频率，并根据检测值选择或计算控制常数，以便即使输入频率改变也能够稳定运行。

69. 发明授权

US10172547B2 System and method using information of involuntary body movement during sleep, and sleeping state detection system and method 有权
公开(公告)号：US10172547B2
公开(公告)日：2019-01-08
申请号：US15032749
申请日：2014-10-28
申请人： C'STEC CORPORATION , Akira Ishibashi , Masahiro Yasutake
发明人： Akira Ishibashi , Masahiro Yasutake , Fusao Ishibashi
IPC分类号： A61B5/00 , A61B5/11 , F24F3/16 , F24F7/08 , F24F120/14
摘要： Provided are a sleeping state detection system and method that can detect the sleeping state of a subject such as an inpatient or a tenant without causing the subject stress, and that can ascertain the health state of the subject from the detection results. The sleeping state detection system includes a room or closed space (201) in which the subject sleeps, and a dust counter (206) that measures the dust particles inside the room or closed space (201). In a state where the inside of the room or closed space (201) is kept cleaner than the outside of the room or closed space (201) by using a fan filter unit (208) disposed in the room or closed space (201), while the subject sleeps, the change over time in the number of dust particles inside the room or closed space (201) is measured using the dust counter (206), and thereby the sleeping state of the subject is detected. The inside of the room or closed space (201) is preferably kept at a cleanliness of US 209D Class100 or better.

70. 发明授权

US09459053B2 Heat exchanger and air-conditioning apparatus 有权
标题翻译：换热器和空调设备
公开(公告)号：US09459053B2
公开(公告)日：2016-10-04
申请号：US14391185
申请日：2013-04-23
申请人： Sangmu Lee , Takuya Matsuda , Akira Ishibashi , Takashi Okazaki
发明人： Sangmu Lee , Takuya Matsuda , Akira Ishibashi , Takashi Okazaki
IPC分类号： F25B39/02 , F28D9/00 , F28F17/00 , F28F1/32 , F25B1/00 , F28D1/053 , F28F1/12 , F28F1/40 , F28F1/02
CPC分类号： F28D9/0062 , F25B1/005 , F28D1/0535 , F28F1/022 , F28F1/128 , F28F1/325 , F28F1/40 , F28F17/005 , F28F2215/10 , F28F2215/12
摘要： A plate fin includes a slit structure formed by cutting and raising a portion of the plate fin to form an opening facing a flow direction of a fluid and a waffle structure formed by bending a portion of the plate fin to form a protrusion having an angle-shaped cross section which protrudes in a stack direction and having a ridge substantially perpendicular to the air flow direction, and the waffle structure is disposed on the upstream side on the plate fins with respect to the slit structure and a slant length L1 on the upstream side of the waffle structure is smaller than a slant length L2 on the downstream side of the waffle structure.
摘要翻译：板状散热片包括狭缝结构，该狭缝结构通过切割并升高板翅片的一部分而形成面向流体的流动方向的开口，以及通过弯曲板状翅片的一部分而形成的瓦饼结构而形成的切口结构，形状的横截面，其在堆叠方向上突出并且具有大致垂直于空气流动方向的脊，并且所述华夫饼结构相对于所述狭缝结构设置在所述板状翅片的上游侧，并且所述上游侧的倾斜长度L1 的楔形结构的宽度小于在华夫饼结构的下游侧的倾斜长度L2。

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