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62. 发明申请

WO2006138131A1 METHOD FOR SILICON NITRIDE CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：硝酸化学气相沉积方法
公开(公告)号：WO2006138131A1
公开(公告)日：2006-12-28
申请号：PCT/US2006/022192
申请日：2006-06-07
申请人： APPLIED MATERIALS, INC. , IYER, R. Suryanarayanan , SEUTTER, Sean M. , TANDON, Sanjeev , SANCHEZ, Errol Antonio C. , WANG, Shulin
发明人： IYER, R. Suryanarayanan , SEUTTER, Sean M. , TANDON, Sanjeev , SANCHEZ, Errol Antonio C. , WANG, Shulin
IPC分类号： C23C16/34
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02208 , H01L21/02271 , H01L21/3185
摘要： Embodiments of the invention generally provide a method for depositing a silicon nitride containing layer on a substrate. The method includes heating a substrate disposed in a processing chamber to a temperature of less than about 650° C, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a silicon nitride containing layer on a substrate. In one embodiment, the silicon-containing gas contains at least one of an aminodisilane compound, a silylazide compound, a silylhydrazine compound, or an alkylsilazane compound. In one example, the aminodisilane compound has the chemical formula of R 2 NsiR’ 2 SiR’ 2 NR 2 , the silylazide compound has the chemical formula of R’ 3 SiNRNR 2 , and the silylhydrazine compound has the chemical formula of R' 3 SiNRNR 2 , wherein each R and R' independently contain hydrogen, halogen, alkyl, alkene, alkyne, aliphatic alkyl, cyclical alkyl, aromatic, organosilane, alkylamino, or a cyclic group containing nitrogen or silicon.
摘要翻译：本发明的实施方案通常提供了一种在衬底上沉积含氮化硅的层的方法。该方法包括将设置在处理室中的基板加热到低于约650℃的温度，使含氮气体流入处理室，使含硅气体流入处理室，并沉积含有层。在一个实施方案中，含硅气体包含氨基二硅烷化合物，硅烷基叠氮化合物，甲硅烷基肼化合物或烷基硅氮烷化合物中的至少一种。在一个实例中，氨基二硅烷化合物具有化学式R 2 N 2 NR 2 SiR 2 2 NR 2 N 2 ，硅烷基叠氮化合物具有化学式R'3 SiNRNR 2 N，并且甲硅烷基肼化合物具有化学式R'3 SiNRNR 2，其中每个R和R'独立地含有氢，卤素，烷基，烯烃，炔烃，脂族烷基，环烷基，芳族，有机硅烷，烷基氨基或含氮或硅的环状基团。

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