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    • 61. 发明授权
    • 구리-티타늄 막의 식각용액 및 그 식각방법
    • 구리 - 티타늄막의식각용액및그식각방법
    • KR100419071B1
    • 2004-02-19
    • KR1020010035127
    • 2001-06-20
    • 동우 화인켐 주식회사엘지디스플레이 주식회사
    • 채기성조규철권오남이경묵황용섭송형수김기섭박민춘김성수
    • C23F1/18
    • PURPOSE: An etching solution for copper titanium layer is provided, which has excellent taper profile against copper layer while etching copper layer and titanium layer at the same time, and has decreased attack against glass substrate and lower silicon layer, thus it is applicable to TFT LCD manufacture process. CONSTITUTION: The etching solution comprises 0.1 to 5 wt.% of inorganic oxidizers selected from the group consisting of CuCl2, Cu(NO3)2, CuSO4, Al(NO3)3, Al2(SO4)3, FeCl3, Fe2(SO4)3 and Fe(Cl4)3; 0.5 to 10 wt.% of inorganic acid or their salts; 0.05 to 0.5 wt.% of fluorine; and a balance of deionized water, and optionally 0.005 wt.% or more of additives selected from the group consisting of pyrrolidine, pyrrolin, pyrrol, indole, pyrazol, imidazol, pyrimidine, purine, pyrimidine and their derivatives.
    • 目的:提供一种铜钛层的蚀刻液,它在对铜层和钛层同时进行蚀刻的同时对铜层具有优良的锥形轮廓,并且对玻璃基板和下层硅层的侵蚀减少,因此适用于TFT LCD制造工艺。 组成:蚀刻溶液包含0.1-5重量%的选自CuCl 2,Cu(NO 3)2,CuSO 4,Al(NO 3)3,Al 2(SO 4)3,FeCl 3,Fe 2(SO 4)3 和Fe(Cl4)3; 0.5至10重量%的无机酸或其盐; 0.05至0.5重量%的氟; 和余量的去离子水以及任选的0.005重量%或更多的选自吡咯烷,吡咯啉,吡咯,吲哚,吡唑,咪唑,嘧啶,嘌呤,嘧啶及其衍生物的添加剂。
    • 62. 发明公开
    • 금속 배선용 구리 합금과 이를 포함하는 액정표시장치용 어레이기판 및 그 제조방법
    • 铜合金金属接线
    • KR1020030051962A
    • 2003-06-26
    • KR1020010081637
    • 2001-12-20
    • 엘지디스플레이 주식회사
    • 황용섭채기성
    • C22C9/00
    • H01L29/458G02F1/136286G02F2001/136295H01L21/28008H01L29/4908
    • PURPOSE: A copper alloy having low resistivity as well as high chemical resistance for stripper is provided, that is, a copper wiring having high reliability even for photolithography process using an existing stripper is provided. CONSTITUTION: The copper alloy for metal wiring is consisted of Cu-In in which a certain amount of indium (In) is included in a pure copper (Cu) metal as a material forming a metal wiring for LCD (liquid crystal display), wherein 0.1 to 2.0 wt.% of indium is contained in the copper alloy, and wherein the copper alloy has 3 to 4 μΩ·cm at 300 deg.C. The array substrate for LCD comprises gate and data wirings alternately formed on a substrate; a switching device formed at a point where the gate and data wirings cross each other; and pixel electrode connected to the switching device, wherein a material forming at least any one wiring selected from the gate and data wirings and wiring for switching device is a copper alloy in which a certain amount of indium (In) is contained in pure copper (Cu) metal.
    • 目的:提供一种具有低电阻率以及高耐化学腐蚀性的铜合金,即,即使使用现有剥离器的光刻工艺也具有高可靠性的铜布线。 构成:金属配线用铜合金由形成金属配线(液晶显示器)的纯铜(Cu)金属中含有一定量铟(In)的Cu-In构成,其中, 铜合金中含有0.1〜2.0重量%的铟,其中铜合金在300℃下具有3〜4μΩ·cm。 用于LCD的阵列基板包括在基板上交替形成的栅极和数据布线; 形成在栅极和数据布线彼此交叉的点处的开关装置; 和连接到开关器件的像素电极,其中形成从栅极和数据布线中选择的至少任何一个布线的材料和用于开关器件的布线是在纯铜中包含一定量的铟(In)的铜合金( 铜)金属。
    • 63. 发明公开
    • 구리-티타늄 막의 식각용액 및 그 식각방법
    • 铜层蚀刻解决方案及其蚀刻方法
    • KR1020020097348A
    • 2002-12-31
    • KR1020010035127
    • 2001-06-20
    • 동우 화인켐 주식회사엘지디스플레이 주식회사
    • 채기성조규철권오남이경묵황용섭송형수김기섭박민춘김성수
    • C23F1/18
    • C23F1/44C23F1/18C23F1/38
    • PURPOSE: An etching solution for copper titanium layer is provided, which has excellent taper profile against copper layer while etching copper layer and titanium layer at the same time, and has decreased attack against glass substrate and lower silicon layer, thus it is applicable to TFT LCD manufacture process. CONSTITUTION: The etching solution comprises 0.1 to 5 wt.% of inorganic oxidizers selected from the group consisting of CuCl2, Cu(NO3)2, CuSO4, Al(NO3)3, Al2(SO4)3, FeCl3, Fe2(SO4)3 and Fe(Cl4)3; 0.5 to 10 wt.% of inorganic acid or their salts; 0.05 to 0.5 wt.% of fluorine; and a balance of deionized water, and optionally 0.005 wt.% or more of additives selected from the group consisting of pyrrolidine, pyrrolin, pyrrol, indole, pyrazol, imidazol, pyrimidine, purine, pyrimidine and their derivatives.
    • 目的:提供铜钛层蚀刻溶液,同时对铜层和钛层进行蚀刻时具有优异的锥形曲线,同时对玻璃基板和硅层的侵蚀减少,因此适用于TFT LCD制造工艺。 构成:蚀刻液含有0.1〜5重量%的选自CuCl 2,Cu(NO 3)2,CuSO 4,Al(NO 3)3,Al 2(SO 4)3,FeCl 3,Fe 2(SO 4)3 和Fe(Cl4)3; 0.5〜10重量%的无机酸或其盐; 0.05〜0.5重量%的氟; 和余量的去离子水,和任选0.005重量%或更多的选自吡咯烷,吡咯啉,吡咯,吲哚,吡唑,咪唑,嘧啶,嘌呤,嘧啶及其衍生物的添加剂。