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    • 62. 发明公开
    • 이중 게이트로 조절되는 다이오드 구조를 이용한 발광소자
    • 双门控制二极管结构的发光装置
    • KR1020090078177A
    • 2009-07-17
    • KR1020080003994
    • 2008-01-14
    • 서울대학교산학협력단
    • 박영준이강무김헌석천준호권성훈박찬형정인영
    • H01L33/02
    • A light emitting device using a double gate controlled diode structure is provided to perform an operation at a relatively low voltage and to reduce power consumption in comparison with a linear emission operation by performing a surface emission operation. A light emitting device includes a P-type semiconductor(10), an N-type semiconductor(20), a semiconductor layer(30), a first electrode(40), and a second electrode(50). A semiconductor film is connected between the P-type semiconductor and the N-type semiconductor. The first electrode is positioned on the semiconductor film. The first electrode is formed to apply electric field to the semiconductor film. The second electrode is positioned under the semiconductor film. The second electrode is formed to apply the additional electric field to the semiconductor film.
    • 提供使用双栅极控制二极管结构的发光器件,以通过执行表面发射操作来执行相对低电压的操作并且与线性发射操作相比降低功耗。 发光器件包括P型半导体(10),N型半导体(20),半导体层(30),第一电极(40)和第二电极(50)。 半导体膜连接在P型半导体和N型半导体之间。 第一电极位于半导体膜上。 形成第一电极以向半导体膜施加电场。 第二电极位于半导体膜下方。 形成第二电极以向半导体膜施加附加电场。