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    • 62. 发明授权
    • Chip information output circuit
    • 芯片信息输出电路
    • US06489832B1
    • 2002-12-03
    • US09672444
    • 2000-09-29
    • Tae-hyun KimKye-hyun KyungKyu-han HanDong-hak Seen
    • Tae-hyun KimKye-hyun KyungKyu-han HanDong-hak Seen
    • H01H8500
    • G11C17/18G11C17/16
    • A chip information output circuit including a fuse box, capable of reducing a layout area without affecting input capacitance, is provided. The chip information output circuit includes a plurality of fuse blocks for generating different outputs according to whether a fuse is cut and a pipeline circuit for receiving a plurality of signals, which are output in parallel from the respective fuse blocks, and serially outputting the plurality of signals. Each of the fuse blocks includes a plurality of fuse boxes for generating output signals, the levels of which are either a high or low logic level according to whether the fuses included therein are cut, wherein the respective fuse boxes are enabled in response to the respective control signals and the output lines of the fuse boxes are wired by an OR operation. The pipeline circuit includes a plurality of serially connected latch units for latching signals output from the fuse blocks and outputting the latched signals.
    • 提供一种芯片信息输出电路,其包括能够减小布局面积而不影响输入电容的保险丝盒。 芯片信息输出电路包括多个熔丝块,用于根据熔丝被切断产生不同的输出,以及一个流水线电路,用于接收从各个熔丝块并行输出的多个信号,并串行输出多个 信号。 每个熔丝块包括用于产生输出信号的多个熔丝盒,根据其中包括的保险丝是否被切断,其电平是高或低逻辑电平,其中相应的熔丝盒响应于相应的 保险丝盒的控制信号和输出线通过OR操作进行接线。 管线电路包括多个串联的锁存单元,用于锁存从熔丝块输出的信号并输出​​锁存信号。
    • 68. 发明申请
    • Magnetic Random Access Memory (MRAM) Read With Reduced Disburb Failure
    • 磁性随机存取存储器(MRAM)读取具有减少的扰乱故障
    • US20120218815A1
    • 2012-08-30
    • US13035006
    • 2011-02-25
    • Jung Pill KimTae Hyun KimKangho Lee
    • Jung Pill KimTae Hyun KimKangho Lee
    • G11C11/14
    • G11C11/1673G11C11/1693
    • Magnetic tunnel junctions (MTJs) in magnetic random access memory (MRAM) are subject to read disturb events when the current passing through the MTJ causes a spontaneous switching of the MTJ due to spin transfer torque (STT) from a parallel state to an anti-parallel state or from an anti-parallel state to a parallel state. Because the state of the MTJ corresponds to stored data, a read disturb event may cause data loss in MRAM devices. Read disturb events may be reduced by controlling the direction of current flow through the MTJ. For example, the current direction through a reference MTJ may be selected based on the state of the reference MTJ. In another example, the current direction through a data or reference MTJ may be alternated such that the MTJ is only subject to read disturb events during approximately half the read operations on the MTJ.
    • 磁流体随机存取存储器(MRAM)中的磁隧道结(MTJ)在经过MTJ的电流导致由于自旋转移转矩(STT)从平行状态到抗反射的MTJ自发切换时,受到读取干扰事件, 平行状态或从反平行状态到并行状态。 因为MTJ的状态对应于存储的数据,读取干扰事件可能导致MRAM设备中的数据丢失。 通过控制通过MTJ的电流的方向可以减少读取干扰事件。 例如,可以基于参考MTJ的状态来选择通过参考MTJ的当前方向。 在另一示例中,可以交替通过数据或参考MTJ的当前方向,使得MTJ仅在MTJ上的大约一半的读取操作期间经受读取干扰事件。