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61. 发明授权

US07278300B2 Gas filled reactive atomic force microscope probe 失效
标题翻译：充气反应原子力显微镜探针
公开(公告)号：US07278300B2
公开(公告)日：2007-10-09
申请号：US11162958
申请日：2005-09-29
申请人： Michael R. Sievers , Siddhartha Panda , Richard Wise
发明人： Michael R. Sievers , Siddhartha Panda , Richard Wise
IPC分类号： G01B5/28
CPC分类号： G01Q60/38
摘要： An atomic force microscope (AFM) having a hollowed cantilever ending in a hollowed tip is described, wherein the end of the tip is immersed in a liquid. The AFM includes a gas source that provides and controls the flow of gas into the hollowed tip. The flow rate of the gas is regulated to form and sustain a static bubble at the end of the hollowed tip. The formation of the static bubble is verified optically. A gas control manifold allows an easy switch of gasses that are fed into the probe tip. The gas that is introduced acts like a chemically modified tip, and is selected to increase the deflection signal for the material of interest. The tip of the present invention is a highly versatile AFM tool that is easily adjusted to provide optimized imaging for a wide variety of materials, in contrast with standard AFMs that require a plethora of chemically modified tips to obtain equivalent results. Moreover, there is a much lower propensity for the tip to damage the sample or to be damaged from inadvertent contact with the surface of the sample.
摘要翻译：描述了一种具有终止在中空尖端中的中空悬臂的原子力显微镜（AFM），其中尖端的端部浸入液体中。 AFM包括提供和控制气体进入中空尖端的气体源。调节气体的流速以在中空末端的端部形成并维持静止气泡。静态气泡的形成被光学验证。气体控制歧管允许容易地切换进入探针尖端的气体。被引入的气体类似于化学改性的尖端，并且被选择以增加感兴趣的材料的偏转信号。本发明的尖端是一种高度通用性的AFM工具，其易于调节以为各种材料提供优化的成像，与需要大量化学修饰的尖端以获得等效结果的标准AFM相反。此外，尖端损坏样品或由于与样品表面无意接触而损坏的倾向低得多。

62. 发明申请

US20070158753A1 SEMICONDUCTOR DEVICE STRUCTURE HAVING LOW AND HIGH PERFORMANCE DEVICES OF SAME CONDUCTIVE TYPE ON SAME SUBSTRATE 失效
标题翻译：具有相同基板上的相同导电类型的低性能和高性能器件的半导体器件结构
公开(公告)号：US20070158753A1
公开(公告)日：2007-07-12
申请号：US11306716
申请日：2006-01-09
申请人： John C. Arnold , Dureseti Chidambarrao , Ying Li , Rajeev Malik , Shreesh Narasimha , Siddhartha Panda , Brian L. Tessier , Richard Wise
发明人： John C. Arnold , Dureseti Chidambarrao , Ying Li , Rajeev Malik , Shreesh Narasimha , Siddhartha Panda , Brian L. Tessier , Richard Wise
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L21/823807 , H01L21/823864 , H01L27/0922 , H01L29/6656 , H01L29/7842 , H01L29/7843
摘要： A method for making a semiconductor device structure, includes: providing a substrate; forming on the substrate a first gate with first spacers, a second gate with second spacers, respective source and drain regions of a same conductive type adjacent to the first gate and the second gate, an isolation region disposed intermediate of the first gate and the second gate, silicides on the first gate, the second gate and respective source and drain regions; forming additional spacers on the first spacers to produce an intermediate structure, and then disposing a stress layer over the entire intermediate structure.
摘要翻译：一种制造半导体器件结构的方法，包括：提供衬底; 在衬底上形成具有第一间隔物的第一栅极，具有第二间隔物的第二栅极，与第一栅极和第二栅极相邻的相同导电类型的相应源极和漏极区域，设置在第一栅极和第二栅极之间的隔离区域栅极，第一栅极上的硅化物，第二栅极和相应的源极和漏极区域; 在第一间隔物上形成附加间隔物以产生中间结构，然后在整个中间结构上设置应力层。

63. 发明申请

US20070068234A1 GAS FILLED REACTIVE ATOMIC FORCE MICROSCOPE PROBE 失效
标题翻译：气体填充反应原子力显微镜探针
公开(公告)号：US20070068234A1
公开(公告)日：2007-03-29
申请号：US11162958
申请日：2005-09-29
申请人： Michael Sievers , Siddhartha Panda , Richard Wise
发明人： Michael Sievers , Siddhartha Panda , Richard Wise
IPC分类号： G01B5/28
CPC分类号： G01Q60/38
摘要： An atomic force microscope (AFM) having a hollowed cantilever ending in a hollowed tip is described, wherein the end of the tip is immersed in a liquid. The AFM includes a gas source that provides and controls the flow of gas into the hollowed tip. The flow rate of the gas is regulated to form and sustain a static bubble at the end of the hollowed tip. The formation of the static bubble is verified optically. A gas control manifold allows an easy switch of gasses that are fed into the probe tip. The gas that is introduced acts like a chemically modified tip, and is selected to increase the deflection signal for the material of interest. The tip of the present invention is a highly versatile AFM tool that is easily adjusted to provide optimized imaging for a wide variety of materials, in contrast with standard AFMs that require a plethora of chemically modified tips to obtain equivalent results. Moreover, there is a much lower propensity for the tip to damage the sample or to be damaged from inadvertent contact with the surface of the sample.
摘要翻译：描述了一种具有终止在中空尖端中的中空悬臂的原子力显微镜（AFM），其中尖端的端部浸入液体中。 AFM包括提供和控制气体进入中空尖端的气体源。调节气体的流速以在中空末端的端部形成并维持静止气泡。静态气泡的形成被光学验证。气体控制歧管允许容易地切换进入探针尖端的气体。被引入的气体类似于化学改性的尖端，并且被选择以增加感兴趣的材料的偏转信号。本发明的尖端是一种高度通用性的AFM工具，其易于调节以为各种材料提供优化的成像，与需要大量化学修饰的尖端以获得等效结果的标准AFM相反。此外，尖端损坏样品或由于与样品表面无意接触而损坏的倾向低得多。

64. 发明授权

US07186660B2 Silicon precursors for deep trench silicon etch processes 失效
标题翻译：用于深沟槽硅蚀刻工艺的硅前体
公开(公告)号：US07186660B2
公开(公告)日：2007-03-06
申请号：US10338964
申请日：2003-01-08
申请人： Siddhartha Panda , Richard S. Wise
发明人： Siddhartha Panda , Richard S. Wise
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01L27/10861
摘要： The present invention relates to etch chemistry and methods for the etching of silicon substrates. The method is particularly useful for deep trench etching of silicon substrates and produces a trench having a high aspect ratio. In this type of deep trench etching, control of the profile of the trench is addressed by the etch chemistry disclosed herein. The etchant described in the present invention comprises silicon and a halogen component, and may be gaseous, liquid or solid. The etchant disclosed is also substantially free of hydrogen and carbon.
摘要翻译：本发明涉及用于蚀刻硅衬底的蚀刻化学和方法。该方法对于硅衬底的深沟槽蚀刻特别有用，并且产生具有高纵横比的沟槽。在这种类型的深沟槽蚀刻中，通过本文公开的蚀刻化学处理对沟槽轮廓的控制。本发明中描述的蚀刻剂包括硅和卤素组分，并且可以是气态，液态或固体。所公开的蚀刻剂也基本上不含氢和碳。

65. 发明申请

US20060118718A1 ENDPOINT DETECTION FOR THE PATTERNING OF LAYERED MATERIALS 有权
标题翻译：用于分层材料的端点检测
公开(公告)号：US20060118718A1
公开(公告)日：2006-06-08
申请号：US10904883
申请日：2004-12-02
申请人： Michael Sievers , Siddhartha Panda , Richard Wise
发明人： Michael Sievers , Siddhartha Panda , Richard Wise
IPC分类号： G01N23/227
CPC分类号： G01N23/227 , H01L22/26
摘要： Photoelectron emissions are used to detect an endpoint of a thickness alteration of a topmost layer in a set of layers undergoing patterning. The set of layers are irradiated, which causes an emission of photoelectrons. Upon receipt of or absence of a photoelectron emission, patterning endpoint is detected.
摘要翻译：光电子发射用于检测经历图案化的一组层中最上层的厚度变化的端点。该层被照射，这导致光电子的发射。在接收到或不存在光电子发射时，检测到图案化端点。

66. 发明授权

US5525320A Process for aluminum nitride powder production 失效
标题翻译：氮化铝粉末生产工艺
公开(公告)号：US5525320A
公开(公告)日：1996-06-11
申请号：US273360
申请日：1994-07-11
申请人： Sotiris E. Pratsinis , M. Kamal Akhtar , Guizhi Wang , Siddhartha Panda
发明人： Sotiris E. Pratsinis , M. Kamal Akhtar , Guizhi Wang , Siddhartha Panda
IPC分类号： C01B21/06 , C01B21/072 , C01B21/064 , C01B21/076
CPC分类号： B82Y30/00 , C01B21/06 , C01B21/072 , C01P2002/60 , C01P2002/80 , C01P2004/03 , C01P2004/50 , C01P2004/51 , C01P2004/52 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C01P2006/12
摘要： Processes for the direct manufacture of nitride powders suitable for low temperature sintering are provided. An elemental vapor is contacted with a nitriding gas at temperatures between 1400 and 1973 K and atmospheric pressure to produce nitride powder.
摘要翻译：提供了用于直接制造适用于低温烧结的氮化物粉末的方法。元素蒸汽在1400和1973K之间的温度和大气压下与氮化气体接触以产生氮化物粉末。

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