会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 65. 发明申请
    • Electronic component package
    • 电子元件包装
    • US20070182028A1
    • 2007-08-09
    • US11645614
    • 2006-12-27
    • Atsushi Takano
    • Atsushi Takano
    • H01L23/28
    • H03H9/725H03H3/08H03H9/02984H03H9/0576H03H9/72
    • The electronic component package includes a mounting board, an electronic component and a molding resin. An external electrode is disposed on a surface of the mounting board. The electronic component connected to the mounting board via the external electrode includes a component-substrate, a device, a component-cover and a resin-made protector. The component-substrate composed of piezoelectric body includes the first surface on which the device is disposed and the second surface opposing the first surface. The component-cover covers the first surface of the substrate and the device. The protector provided on the second surface contains filler. The molding resin covers the electronic component on the mounting board.
    • 电子部件封装包括安装板,电子部件和模制树脂。 外部电极设置在安装板的表面上。 通过外部电极连接到安装板的电子部件包括部件基板,装置,部件盖和树脂制保护件。 由压电体组成的部件基板包括设置有该装置的第一表面和与第一表面相对的第二表面。 组件盖覆盖基板和设备的第一表面。 在第二表面上提供的保护器包含填料。 模制树脂覆盖安装板上的电子部件。
    • 66. 发明申请
    • Image-capturing device, light adjustment mechanism, and light control blade
    • 影像拍摄装置,调光机构及灯光控制片
    • US20060088312A1
    • 2006-04-27
    • US11254766
    • 2005-10-21
    • Shun KayamaYukiko ShimizuAtsushi Takano
    • Shun KayamaYukiko ShimizuAtsushi Takano
    • G03B9/40
    • G03B9/40
    • An image-capturing device includes a lens barrel having therein an optical image-capturing system; a light control blade which opens and closes an optical path of the optical image-capturing system so as to control the amount of light entering the system; and a base body having a transmission hole through which the optical path extends and supporting the light control blade in a movable manner. The light control blade includes a multilayer laminate including a base material composed of a film and serving as a substrate, and at least a metallic layer disposed on the base material; and a light-blocking layer disposed on a first section of the multilayer laminate. A second section of the multilayer laminate not having the light-blocking layer disposed thereon defines a light adjustment filter for adjusting the amount of incident light. The first section having the light-blocking layer defines a light-blocking portion for blocking incident light.
    • 图像捕获装置包括其中具有光学图像捕获系统的透镜筒; 光控制叶片,其打开和关闭光学图像捕获系统的光路,以便控制进入系统的光量; 以及基体,其具有透光孔,光路延伸穿过所述透光孔并以可移动的方式支撑所述光控制片。 光控制刮板包括多层叠层,其包括由膜构成的基材和用作基板,以及至少设置在基材上的金属层。 以及设置在所述多层层叠体的第一部分上的遮光层。 不设置遮光层的多层叠层的第二部分限定了用于调节入射光量的光调节滤光器。 具有遮光层的第一部分限定了用于阻挡入射光的遮光部分。
    • 69. 发明授权
    • Potential sensor employing electrooptic crystal and potential measuring
method
    • 采用电光晶体的潜在传感器和电位测量方法
    • US5434698A
    • 1995-07-18
    • US94907
    • 1993-07-20
    • Atsushi TakanoMinoru UtsumiHiroyuki Obata
    • Atsushi TakanoMinoru UtsumiHiroyuki Obata
    • G01R1/07G01R15/24G02F1/015G01R31/00
    • G01R1/071G01R15/242
    • A high-resistance compound semiconductor 12 is epitaxially grown on a low-resistance compound semiconductor 11 and a dielectric reflecting film 13 is formed thereon, thereby forming a monolithic sensor 10. As the low-resistance compound semiconductor 11, a compound semiconductor is used which has a large bandgap so as to enable probe light to pass therethrough without being absorbed and which has a lattice constant and a thermal expansion coefficient, which are close to those of the high-resistance compound semiconductor. In addition, since the low-resistance compound semiconductor 11 also serves as an electrode, a compound semiconductor which has a resistivity of 10.sup.+1 .OMEGA.cm or less is used. Since the shorter the wavelength of the probe light used, the larger the retardation change and the larger the signal output, a compound semiconductor which has a large bandgap is used as the high-resistance compound semiconductor 12 so that light of short wavelength can be used. The high-resistance compound semiconductor 12 is also required to have a large electrooptic constant and a resistivity of 10.sup.5 .OMEGA.cm or more.
    • 在低电阻化合物半导体11上外延生长高电阻化合物半导体12,并在其上形成电介质反射膜13,从而形成单片传感器10.作为低电阻化合物半导体11,使用化合物半导体 具有大的带隙,使得探针光能够通过而不被吸收并且具有接近于高电阻化合物半导体的晶格常数和热膨胀系数。 此外,由于低电阻化合物半导体11也用作电极,所以使用电阻率为10 + 1欧姆·厘米或更小的化合物半导体。 由于使用的探针光的波长越短,延迟变化越大,信号输出越大,所以使用具有大带隙的化合物半导体作为高电阻化合物半导体12,能够使用短波长的光 。 高电阻化合物半导体12还需要具有大的电光常数和105欧姆·厘米或更高的电阻率。