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    • 55. 发明公开
    • INSPECTION SYSTEM WITH IN-LENS, OFF-AXIS ILLUMINATOR
    • 与非轴向光检查系统通过透镜
    • EP0721582A1
    • 1996-07-17
    • EP94929995.0
    • 1994-09-30
    • OPTICAL SPECIALITIES, INC.
    • LIN, Lawrence, H.SCHEFF, Victor, A.
    • G01B11G01N21G02B27H01L21
    • G01N21/95623G02B27/46
    • An inspection system (2) employs a beam of monochromatic light (12) that travels through a Fourier transform lens (16) before striking a specimen wafer (4) at an angle (υ) with respect to the normal (26) of the specimen wafer (4) to produce diffracted light (28b and 28c) that has a broad spatial frequency spectrum which can be selectively filtered to produce a dark field image pattern of the various sized defects in an inspection area (22) of the wafer. The nearly collimated beam of monochromatic light strikes the wafer at an angle (υ) with respect to the normal of the wafer of between zero degrees and a predetermined maximum angle. For the inspection system disclosed, the predetermined maximum angle is the angle formed when the beam of monochromatic light is as far away from the optic axis as possible yet still within the numerical aperture of the Fourier transform lens (16). Moreover, if a specific range of defect sizes is anticipated, the system can be optimized by setting the angle (υ) at which the collimated beam of monochromatic light strikes the wafer to the angle (υ) which allows the system to collect those spatial frequencies which are best representative of the anticipated range of defects sizes.
    • 58. 发明申请
    • 欠陥観察方法及び欠陥観察装置
    • 缺陷观察方法和缺陷观察装置
    • WO2016088734A1
    • 2016-06-09
    • PCT/JP2015/083688
    • 2015-12-01
    • 株式会社日立ハイテクノロジーズ
    • 大谷 祐子高木 裕治中山 英樹
    • G01N21/956G01N23/225H01L21/66
    • G01N21/95607G01N21/956G01N21/95623G01N23/2251G01N2021/95615
    •  本発明は、他の検査装置(107)で検出した試料(101)上の欠陥の位置情報を用いて試料上の欠陥を光学顕微鏡(105)で撮像した画像から欠陥を検出して欠陥の位置情報を修正し、修正した位置情報を用いて走査型電子顕微鏡SEM(106)で試料上の欠陥を詳細に観察する欠陥観察方法及び欠陥観察装置において、前記欠陥の位置情報を修正する際に、検出する欠陥に応じて光学顕微鏡(105)の検出光学系(210)の空間分布光学素子(205)を切り替え、切り替えた空間分布光学素子(205)の種類に応じて、光学顕微鏡(105)で欠陥の画像を取得する画像取得条件および当該画像から欠陥を検出する画像処理条件を変えるものである。 本発明によると、半導体デバイスの製造工程において半導体ウェハ上に発生した欠陥を高速かつ高検出率で観察できる。
    • 本发明提供了一种缺陷观察方法和缺陷观察装置,其通过使用由另一个检测到的样本上的缺陷的位置信息来检测由光学显微镜(105)捕获的样品(101)上的缺陷的图像的缺陷 检查装置(107),修改缺陷的位置信息,并利用扫描型电子显微镜SEM(106)使用修正的位置信息详细地观察样品上的缺陷。 当要修改缺陷的位置信息时,根据检测到的缺陷切换光学显微镜(105)的检测光学系统(210)的空间分布的光学元件(205)和图像捕获条件 通过光学显微镜(105)捕获缺陷的图像,并根据切换的空间分布式光学元件(205)的类型改变从图像检测到缺陷的图像处理条件, 。 根据本发明,可以以高检测速度快速地观察半导体器件的制造期间在半导体晶片中发生的缺陷。
    • 59. 发明申请
    • INSPECTION APPARATUS AND METHOD, LITHOGRAPHIC APPARATUS, LITHOGRAPHIC PROCESSING CELL AND DEVICE MANUFACTURING METHOD
    • 检查装置和方法,光刻设备,光刻处理单元和器件制造方法
    • WO2015000673A1
    • 2015-01-08
    • PCT/EP2014/062338
    • 2014-06-13
    • ASML NETHERLANDS B.V.
    • QUINTANILHA, Richard
    • G03F7/20G01N21/956
    • G03F7/70625G01N21/95623G01N2201/061G01N2201/08G01N2201/12G03F7/70633
    • The present invention determines property of a target (30) on a substrate (W), such as a grating on a wafer. An inspection apparatus has an illumination source (702, 710) with two or more illumination beams (716, 716', 716", 716"') in the pupil plane of a high numerical aperture objective lens (L3). The substrate and target are illuminated via the objective lens from different angles of incidence with respect to the plane of the substrate. In the case of four illumination beams, a quad wedge optical device (QW) is used to separately redirect diffraction orders of radiation scattered from the substrate and separates diffraction orders from the two or more illumination beams. For example four 0 th diffraction orders are separated for four incident directions. After capture in multimode fibers (MF), spectrometers (S1- S4) are used to measure the intensity of the separately redirected 0 th diffraction orders as a function of wavelength. This may then be used in determining a property of a target.
    • 本发明确定了诸如晶片上的光栅的衬底(W)上的靶(30)的性质。 检查装置具有在高数值孔径物镜(L3)的光瞳平面中具有两个或更多个照明光束(716,716',716“,716”')的照明源(702,710)。 通过物镜相对于衬底的平面从不同的入射角度照射衬底和靶。 在四个照明光束的情况下,使用四楔形光学器件(QW)分别重新引导从衬底散射的辐射的衍射级,并将衍射级与两个或更多个照明光束分离。 例如,四个入射方向分开第四个第零衍射级。 在多模光纤(MF)中捕获之后,使用光谱仪(S1-4.4)测量作为波长的函数的单独重定向的第0衍射级的强度。 这可以用于确定目标的属性。