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51. 发明申请

US20210104396A1 CONFORMAL AND SMOOTH TITANIUM NITRIDE LAYERS AND METHODS OF FORMING THE SAME 有权
公开(公告)号：US20210104396A1
公开(公告)日：2021-04-08
申请号：US16595945
申请日：2019-10-08
申请人： Eugenus, Inc.
发明人： Sung-Hoon Jung , Niloy Mukherjee , Yoshikazu Okuyama , Nariman Naghibolashrafi , Bunsen B. Nie , Hae Young Kim , Somilkumar J. Rathi
IPC分类号： H01L21/02 , C23C16/34 , H01L21/28 , C23C16/455
摘要： The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN). In one aspect, a method of forming a thin film comprising TiN comprises exposing a semiconductor substrate to one or more first cyclical vapor deposition cycles each comprising an exposure to a first Ti precursor and an exposure to a first N precursor to form a first portion of the thin film and exposing the semiconductor substrate to one or more second cyclical vapor deposition cycles each comprising an exposure to a second Ti precursor and an exposure to a second N precursor to form a second portion of the thin film, wherein exposures to one or both of the first Ti precursor and the first N precursor during the one or more first cyclical vapor deposition cycles are at different pressures relative to corresponding exposures to one or both of the second Ti precursor and the second N precursor during the one or more second cyclical vapor deposition cycles. Aspects are also directed to semiconductor structures incorporating the thin film and method of forming the same.

52. 发明公开

US20240337018A1 CORROSION-RESISTANT COATINGS AND METHODS OF PRODUCING SAME 审中-公开
公开(公告)号：US20240337018A1
公开(公告)日：2024-10-10
申请号：US18625614
申请日：2024-04-03
申请人： Eugenus, Inc.
发明人： Mats Ingvar Larsson , Selase Torkornoo , Behzad Mahmoudi
IPC分类号： C23C16/44 , C09D1/00 , C09D5/08 , C23C16/455
CPC分类号： C23C16/4404 , C09D1/00 , C09D5/084 , C23C16/45544
摘要： A protective coating formed on a reaction chamber wall comprises a base layer comprising an oxide represented by a chemical formula of AxByOz, wherein A is a metal element, B is a metal or semiconductor element different from A, O is oxygen and each of x, y and z is >0. The protective coating is configured such that upon exposure to a fluorine (F)-containing reactant, at least a portion of the base layer reacts with the fluorine F-containing reactant and is converted to a F-containing region comprising a solid fluoride of the A.

53. 发明授权

US12029144B2 Encapsulation layer for chalcogenide material 有权
公开(公告)号：US12029144B2
公开(公告)日：2024-07-02
申请号：US17211100
申请日：2021-03-24
申请人： Eugenus, Inc.
发明人： Sang Young Lee , Sung-Hoon Jung , Jerry Mack , Niloy Mukherjee
IPC分类号： H01L45/00 , H01L27/24 , H10B63/00 , H10N70/00 , H10N70/20
CPC分类号： H10N70/882 , H10B63/84 , H10N70/041 , H10N70/231 , H10B63/24
摘要： The disclosed technology generally relates to semiconductor devices, and more particularly to an encapsulation layer for a semiconductor device having a chalcogenide material, and methods of forming the same. In one aspect, a method of fabricating a semiconductor device comprises providing a substrate having an exposed surface comprising a chalcogenide material. The method additionally comprises forming a low-electronegativity (low-χ) metal oxide layer on the chalcogenide material by cyclically exposing the substrate to a low-χ metal precursor and an oxygen precursor comprising O2, wherein the low-χ metal of the metal precursor has an electronegativity of 1.6 or lower.

54. 发明公开

US20240124978A1 GAS DIFFUSER PLATE COATED WITH EMISSIVITY-CONTROLLING THIN FILM AND METHODS OF FORMING SAME 审中-公开
公开(公告)号：US20240124978A1
公开(公告)日：2024-04-18
申请号：US18482791
申请日：2023-10-06
申请人： Eugenus, Inc.
发明人： Behzad Mahmoudi , Mats Ingvar Larsson , Selase Torkornoo , Hae Young Kim , Cole Delany Green , Bunsen Nie , James Long Wu , Chan Yong Park , Deoghwan Kim , Siwon Ryu , Jae Jun Jung , Changhun Shin
IPC分类号： C23C16/455
CPC分类号： C23C16/45559 , C23C16/45525
摘要： A gas diffuser plate in a cyclic deposition chamber is disclosed. The gas diffuser plate as fabricated comprises a substrate diffuser plate having a substrate emissivity and a coating formed on the substrate diffuser plate. The gas diffuser plate having the substrate diffuser plate coated with the coating has an emissivity higher than the substrate emissivity. The coating comprises a first layer formed on the substrate diffuser plate and comprising a first material configured to modulate the emissivity of the gas diffuser plate, and a second layer comprising a second corrosion-resistant material. The first material comprises titanium nitride oxide (TiNxOy). The emissivity of the gas diffuser plate is at least partially based on the ratio of nitrogen and oxygen in TiNxOy.

55. 发明公开

US20240062993A1 TEMPERATURE-CONTROLLED SHOWERHEAD ASSEMBLY FOR CYCLIC VAPOR DEPOSITION 审中-公开
公开(公告)号：US20240062993A1
公开(公告)日：2024-02-22
申请号：US18449541
申请日：2023-08-14
申请人： Eugenus, Inc.
发明人： Martin J. Salinas , Miguel Saldana , Victor Calderon , H. William Lucas, JR.
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J2237/332 , H01J2237/002
摘要： A temperature-controlled showerhead assembly is configured to deliver a plurality of gases into a cyclic deposition chamber. The showerhead assembly comprises a showerhead body having a cavity formed therethrough and at a central region thereof, wherein the cavity is configured to diffuse or mix the gases prior to introducing the gases into the deposition chamber. The showerhead assembly additionally comprises a network of cooling channels configured to conduct heat away from the showerhead body. The showerhead assembly further comprises a network of heating elements configured to supply heat to the showerhead body, wherein the network of heating elements is disposed closer to the an upper surface of the showerhead body relative to the cooling channels.

56. 发明授权

US11832537B2 Titanium silicon nitride barrier layer 有权
公开(公告)号：US11832537B2
公开(公告)日：2023-11-28
申请号：US16595912
申请日：2019-10-08
申请人： Eugenus, Inc.
发明人： Jae Seok Heo , Jerry Mack , Somilkumar J. Rathi , Niloy Mukherjee
IPC分类号： H10N70/00 , H10B63/00
CPC分类号： H10N70/8413 , H10B63/24 , H10N70/826
摘要： The disclosed technology generally relates to a barrier layer comprising titanium silicon nitride, and more particularly to a barrier layer for nonvolatile memory devices, and methods of forming the same. In one aspect, a method of forming an electrode for a phase change memory device comprises forming over a semiconductor substrate an electrode comprising titanium silicon nitride (TiSiN) on a phase change storage element configured to store a memory state. Forming the electrode comprises exposing a semiconductor substrate to one or more cyclical vapor deposition cycles, wherein a plurality of the cyclical vapor deposition cycles comprises an exposure to a Ti precursor, an exposure to a N precursor and an exposure to a Si precursor.

57. 发明公开

US20230215725A1 CONFORMAL AND SMOOTH TITANIUM NITRIDE LAYERS AND METHODS OF FORMING THE SAME 审中-公开
公开(公告)号：US20230215725A1
公开(公告)日：2023-07-06
申请号：US17937118
申请日：2022-09-30
申请人： Eugenus, Inc.
发明人： Sung-Hoon Jung , Niloy Mukherjee , Yoshikazu Okuyama , Nariman Naghibolashrafi , Bunsen B. Nie , Hae Young Kim , Somilkumar J. Rathi
IPC分类号： H01L21/02 , H01L21/28 , C23C16/34 , C23C16/455
CPC分类号： H01L21/0228 , H01L21/28194 , C23C16/34 , H01L21/02211 , H01L21/0254 , C23C16/45527
摘要： The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN). In one aspect, a method of forming a thin film comprising TiN comprises exposing a semiconductor substrate to one or more first cyclical vapor deposition cycles each comprising an exposure to a first Ti precursor and an exposure to a first N precursor to form a first portion of the thin film and exposing the semiconductor substrate to one or more second cyclical vapor deposition cycles each comprising an exposure to a second Ti precursor and an exposure to a second N precursor to form a second portion of the thin film, wherein exposures to one or both of the first Ti precursor and the first N precursor during the one or more first cyclical vapor deposition cycles are at different pressures relative to corresponding exposures to one or both of the second Ti precursor and the second N precursor during the one or more second cyclical vapor deposition cycles. Aspects are also directed to semiconductor structures incorporating the thin film and method of forming the same.

58. 发明申请

US20230128366A1 LIQUID PRECURSOR INJECTION FOR THIN FILM DEPOSITION 有权
公开(公告)号：US20230128366A1
公开(公告)日：2023-04-27
申请号：US17937353
申请日：2022-09-30
申请人： Eugenus, Inc.
发明人： Alex Finkelman , Niloy Mukherjee , Miguel Saldana
IPC分类号： C23C16/448 , C23C16/52 , C23C16/54 , C23C16/455
摘要： The disclosed technology relates generally to semiconductor processing and more particularly to liquid precursor injection apparatus and methods for depositing thin films. A method of injecting a liquid precursor into a thin film deposition chamber comprises delivering a vaporized liquid precursor into the thin film deposition chamber by atomizing the liquid precursor into atomized precursor droplets using a liquid injection unit and vaporizing the atomized precursor droplets into the vaporized liquid precursor in a vaporization chamber. The liquid injector unit and the liquid precursor are such that operating the liquid precursor delivery unit under a lower stability condition, including a first liquid precursor temperature at the liquid injection unit, a first liquid precursor pressure upstream of the liquid precursor injection unit and a first gas pressure downstream of the liquid precursor injection unit, causes a mass flow rate of the liquid precursor to vary by more than 10% relative to an average mass flow rate of the liquid precursor during a first time duration. Delivering the vaporized liquid precursor into the thin film deposition chamber comprises operating the liquid precursor delivery unit under a higher stability condition. The higher stability includes one or more of: a second liquid precursor temperature at the liquid injection unit that is lower than the first liquid temperature; a second liquid pressure upstream of the injection unit that is higher than the first liquid pressure; and a second gas pressure downstream of the liquid injection unit that is higher than the first Gas pressure. The higher stability is such that that the mass flow rate of the liquid precursor varies by less than 10% relative to an average mass flow rate during a second time duration having the same time duration as the first time duration.

59. 发明授权

US11459654B2 Liquid precursor injection for thin film deposition 有权
公开(公告)号：US11459654B2
公开(公告)日：2022-10-04
申请号：US16952493
申请日：2020-11-19
申请人： Eugenus, Inc.
发明人： Alex Finkelman , Niloy Mukherjee , Miguel Saldana
IPC分类号： C23C16/448 , C23C16/455 , C23C16/52 , C23C16/54 , H01J37/32
摘要： The disclosed technology relates generally to semiconductor processing and more particularly to liquid precursor injection apparatus and methods for depositing thin films. A method of injecting a liquid precursor into a thin film deposition chamber comprises delivering a vaporized liquid precursor into the thin film deposition chamber by atomizing the liquid precursor into atomized precursor droplets using a liquid injection unit and vaporizing the atomized precursor droplets into the vaporized liquid precursor in a vaporization chamber. The liquid injector unit and the liquid precursor are such that operating the liquid precursor delivery unit under a lower stability condition, including a first liquid precursor temperature at the liquid injection unit, a first liquid precursor pressure upstream of the liquid precursor injection unit and a first gas pressure downstream of the liquid precursor injection unit, causes a mass flow rate of the liquid precursor to vary by more than 10% relative to an average mass flow rate of the liquid precursor during a first time duration. Delivering the vaporized liquid precursor into the thin film deposition chamber comprises operating the liquid precursor delivery unit under a higher stability condition. The higher stability includes one or more of: a second liquid precursor temperature at the liquid injection unit that is lower than the first liquid temperature; a second liquid pressure upstream of the injection unit that is higher than the first liquid pressure; and a second gas pressure downstream of the liquid injection unit that is higher than the first Gas pressure. The higher stability is such that that the mass flow rate of the liquid precursor varies by less than 10% relative to an average mass flow rate during a second time duration having the same time duration as the first time duration.

60. 发明申请

US20220310917A1 ENCAPSULATION LAYER FOR CHALCOGENIDE MATERIAL 有权
公开(公告)号：US20220310917A1
公开(公告)日：2022-09-29
申请号：US17211100
申请日：2021-03-24
申请人： Eugenus, Inc.
发明人： Sang Young Lee , Sung-Hoon Jung , Jerry Mack , Niloy Mukherjee
IPC分类号： H01L45/00 , H01L27/24
摘要： The disclosed technology generally relates to semiconductor devices, and more particularly to an encapsulation layer for a semiconductor device having a chalcogenide material, and methods of forming the same. In one aspect, a method of fabricating a semiconductor device comprises providing a substrate having an exposed surface comprising a chalcogenide material. The method additionally comprises forming a low-electronegativity (low-χ) metal oxide layer on the chalcogenide material by cyclically exposing the substrate to a low-χ metal precursor and an oxygen precursor comprising O2, wherein the low-χ metal of the metal precursor has an electronegativity of 1.6 or lower.

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