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51. 发明授权

US5656101A Soft magnetic alloy thin film with nitrogen-based amorphous phase 失效
标题翻译：软磁合金薄膜与氮基非晶相
公开(公告)号：US5656101A
公开(公告)日：1997-08-12
申请号：US412497
申请日：1995-03-28
申请人： Yasuo Hayakawa , Akihiro Makino
发明人： Yasuo Hayakawa , Akihiro Makino
IPC分类号： C23C14/14 , C22C38/00 , C22C45/02 , H01F10/00 , H01F10/13 , H01F10/14 , H01F17/00 , H01F41/04 , H01F1/147
CPC分类号： B82Y25/00 , H01F10/007 , H01F10/131 , H01F10/136 , H01F10/147 , H01F17/0013 , H01F41/046
摘要： A soft magnetic alloy thin film includes a fine crystalline phase and an amorphous phase. The fine crystalline phase includes an average crystalline grain size of 10 nm or less in diameter and has body-centered cubic structure mainly composed of Fe. The amorphous phase has a nitrogen (N) compound as the main composition and occupies at least 50% of the structure of the thin film. An element M is incorporated at least in the amorphous phase, and includes at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, W, and rare earth metal elements. A plane-type magnetic device is made using this thin film.
摘要翻译：软磁性合金薄膜包括细晶相和非晶相。细结晶相的直径平均晶粒尺寸为10nm以下，主要由Fe构成的体心立方结构。非晶相具有氮（N）化合物作为主要成分，占薄膜结构的至少50％。元素M至少包含在非晶相中，并且包括选自Ti，Zr，Hf，V，Nb，Ta，W和稀土金属元素中的至少一种元素。使用该薄膜制造平面型磁性装置。

52. 发明授权

US4743313A Amorphous alloy for use in magnetic heads 失效
标题翻译：用于磁头的非晶合金
公开(公告)号：US4743313A
公开(公告)日：1988-05-10
申请号：US797238
申请日：1985-11-12
申请人： Akihiro Makino , Mikio Nakashima , Tadashi Sasaki , Koichi Mukasa
发明人： Akihiro Makino , Mikio Nakashima , Tadashi Sasaki , Koichi Mukasa
IPC分类号： C22C45/02 , C22C45/04 , H01F1/153 , C22C19/07
CPC分类号： C22C45/04 , H01F1/15316
摘要： An amorphous alloy for use in magnetic heads having the following composition formula:(Fe.sub.1-a, Co.sub.a).sub.100-b (Si.sub.c,B.sub.d).sub.bwherea=0.93-0.95b=23-27 atomic %c/c+d)=0.55-0.65.Cr and Ru may be desirably added to the amorphous alloy for improving the corrosion and abrasion resistance. Further, secondary phase particles may be dispersed in the alloy matrix for improving the effective magnetic permeability, particularly, at high frequency region.
摘要翻译：用于磁头的非晶态合金，具有以下组成式：（Fe1-a，Coa）100-b（Sic，Bd）b其中a = 0.93-0.95b = 23-27原子％c / c + d）= 0.55-0.65。可以优选将Cr和Ru加入到非晶合金中，以提高耐腐蚀和耐磨性。此外，二次相粒子可以分散在合金基体中，以提高有效磁导率，特别是在高频区域。

53. 发明申请

US20210230723A1 ALLOY COMPOSITION, FE-BASED NANO-CRYSTALLINE ALLOY AND MANUFACTURING METHOD THEREOF, AND MAGNETIC COMPONENT 有权
公开(公告)号：US20210230723A1
公开(公告)日：2021-07-29
申请号：US17165380
申请日：2021-02-02
申请人： Akihiro Makino , NINGBO ZHONGKE B PLUS NEW MATERIALS TECHNOLOGY CO., LTD
发明人： Akihiro Makino , He MEN , Hai GUO , Lishan HUO
IPC分类号： C22C38/00 , C22C38/12 , C22C38/02 , C22C38/16 , H01F1/147 , C21D6/00 , C22C33/00 , H01F1/153
摘要： An alloy composition, a Fe-based nano-crystalline alloy and a manufacturing method thereof, and a magnetic component are disclosed. The expression of the alloy composition is FeaVαBbSicPxCyCuz and 79≤a≤91 at %, 5≤b≤13 at %, 0≤c≤8 at %, 1≤x≤8 at %, 0≤y≤5 at %, 0.4≤z≤1.4 at %, 0

54. 发明授权

US08287665B2 Soft magnetic alloy, magnetic part using soft magnetic alloy, and method of manufacturing same 有权
标题翻译：软磁合金，使用软磁合金的磁性部件及其制造方法
公开(公告)号：US08287665B2
公开(公告)日：2012-10-16
申请号：US12532088
申请日：2008-03-19
申请人： Akiri Urata , Hiroyuki Matsumoto , Akihiro Makino
发明人： Akiri Urata , Hiroyuki Matsumoto , Akihiro Makino
IPC分类号： H01F1/147
CPC分类号： H01F1/15308 , B22F9/08 , B22F2003/248 , B22F2009/048 , B22F2998/10 , C21D6/00 , C21D6/004 , C21D6/007 , C21D8/1211 , C22C33/0207 , C22C38/002 , C22C38/16 , C22C45/02 , C22C2200/02 , C22C2202/02 , H01F1/15325 , H01F1/15333 , H01F1/15375 , H01F27/255 , H01F27/292 , H01F41/0226 , H01F2017/046 , B22F1/0085 , B22F1/0059 , B22F3/02 , B22F3/24
摘要： A soft magnetic alloy contains P, B, and Cu as essential components. As a preferred example, an Fe-based alloy contains Fe of 70 atomic % or more, B of 5 atomic % to 25 atomic %, Cu of 1.5 atomic % or less (excluding zero), and P of 10 atomic or less (excluding zero).
摘要翻译：软磁合金含有P，B和Cu作为必要成分。作为优选的例子，Fe系合金含有70原子％以上的Fe，5原子％〜25原子％的B，1.5原子％以下的Cu（不包括零），10原子以下的P 零）。

55. 发明授权

US06591479B2 Production method for a spin-valve type magnetoresistive element 失效
标题翻译：自旋阀型磁阻元件的制造方法
公开(公告)号：US06591479B2
公开(公告)日：2003-07-15
申请号：US09538336
申请日：2000-03-29
申请人： Yukie Nakazawa , Masamichi Saito , Naoya Hasegawa , Akihiro Makino
发明人： Yukie Nakazawa , Masamichi Saito , Naoya Hasegawa , Akihiro Makino
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B2005/3996 , G11C11/1675 , H01F10/3268 , H01F41/304 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49055
摘要： A production method for a spin-valve type magnetoresistive element comprising laminating an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic electrically conductive layer, a free magnetic layer, and a second antiferromagnetic layer. The second antiferromagnetic layer is located on the free magnetic layer and orients the magnetization direction of the free magnetic layer. In this method, a first thermal treatment is performed at a first temperature of ordering a crystal structure of the first antiferromagnetic layer or at a second temperature lower than a second blocking temperature of the second antiferromagnetic layer. After the first thermal treatment, a second thermal treatment is performed at a third temperature lower than a first blocking temperature of the first antiferromagnetic layer but higher than said second blocking temperature of the second antiferromagnetic layer.
摘要翻译：一种自旋阀型磁阻元件的制造方法，包括层叠反铁磁性层，钉扎磁性层，非磁性导电层，自由磁性层和第二反铁磁性层。第二反铁磁层位于自由磁性层上并定向自由磁性层的磁化方向。在该方法中，在排列第一反铁磁层的晶体结构的第一温度或低于第二反铁磁性层的第二阻挡温度的第二温度下进行第一热处理。在第一热处理之后，在比第一反铁磁层的第一阻挡温度低的第三温度下进行第二热处理，但高于第二反铁磁性层的所述第二阻挡温度。

56. 发明授权

US06295186B1 Spin-valve magnetoresistive Sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias 失效
标题翻译：旋转阀磁阻传感器包括用于增加矫顽力的第一反铁磁层和用于施加纵向偏置的第二反铁磁层
公开(公告)号：US06295186B1
公开(公告)日：2001-09-25
申请号：US08944665
申请日：1997-10-06
申请人： Naoya Hasegawa , Masamichi Saito , Akihiro Makino
发明人： Naoya Hasegawa , Masamichi Saito , Akihiro Makino
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3163 , G11B5/3903 , G11B5/3929 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10 , H01L43/12
摘要： The present invention provides a spin-valve magnetoresistive sensor comprising at least two ferromagnetic layers including a first and a second ferromagnetic layers. A first antiferromagnetic layer is layered adjacent to the first ferromagnetic layer for increasing the coercive force of the first ferromagnetic layer to pin the magnetization direction of the first ferromagnetic layer. A pair of second antiferromagnetic layers are respectively positioned adjacent to the longitudinal ends of the second ferromagnetic layer. Further, a pair of third ferromagnetic layers are respectively layered adjacent to said pair of second antiferromagnetic layers for inducing magnetic anisotropy to pin the magnetization direction of each third ferromagnetic layer in a direction perpendicular to the pinned magnetization direction of the first ferromagnetic layer, thereby imposing a longitudinal bias on the second ferromagnetic layer to stabilize magnetic domains therein in order to suppress Barkhausen noise. The magnetization direction of the second ferromagnetic layer remains free to rotate in accordance with the direction of an external magnetic field, thereby changing the electrical resistance of the sensor.
摘要翻译：本发明提供一种自旋阀磁阻传感器，其包括至少两个包含第一和第二铁磁层的铁磁层。第一反铁磁性层与第一铁磁层相邻地层叠，以增加第一铁磁性层的矫顽力来固定第一铁磁性层的磁化方向。一对第二反铁磁层分别邻近第二铁磁层的纵向端部定位。此外，一对第三铁磁层分别与所述一对第二反铁磁层相邻地层叠，用于引起磁各向异性以在垂直于第一铁磁层的钉扎磁化方向的方向上引导每个第三铁磁层的磁化方向，由此施加为了抑制巴克豪森噪声，第二铁磁层上的纵向偏压使其中的磁畴稳定。第二铁磁层的磁化方向根据外部磁场的方向保持自由旋转，从而改变传感器的电阻。

57. 发明授权

US6139908A Magnetoresistance device and production method thereof 有权
标题翻译：磁阻装置及其制造方法
公开(公告)号：US6139908A
公开(公告)日：2000-10-31
申请号：US322817
申请日：1999-05-28
申请人： Kazuaki Ikarashi , Naoya Hasegawa , Akihiro Makino
发明人： Kazuaki Ikarashi , Naoya Hasegawa , Akihiro Makino
IPC分类号： G11B5/39 , G01R33/09 , H01F10/08 , H01F10/32 , H01L43/08 , H01L43/12 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , H01F10/3268 , H01L43/12 , G11B2005/3996 , G11B5/3903 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/12986
摘要： A magnetoresistance device comprising at least two ferromagnetic layers separated by a non-magnetic layer, the coercive force of one of the ferromagnetic layers being enhanced by a coercive force enhancement layer of an antiferromagnetic material disposed adjacent to the one of the ferromagnetic layer thereby pinning magnetization inversion in the one of the ferromagnetic layer, the other ferromagnetic layer serving as a free ferromagnetic layer in which magnetization inversion is allowed, wherein the spin orientation in the coercive force enhancement layer is aligned in a multilayer fashion into a direction substantially parallel to the plane of the coercive force enhancement layer. A method of producing such a device is also disclosed.
摘要翻译：磁阻器件包括由非磁性层分开的至少两个铁磁层，其中一个铁磁层的矫顽力由靠近该铁磁层之一设置的反铁磁材料的矫顽力增强层增强，由此固定磁化强度在铁磁层中的一个反转，另一个铁磁层用作其中允许磁化反转的自由铁磁层，其中矫顽力增强层中的自旋取向以多层方式对准到基本上平行于该平面的方向的矫顽力增强层。还公开了一种制造这种装置的方法。

58. 发明授权

US6055135A Exchange coupling thin film and magnetoresistive element comprising the same 失效
标题翻译：交换耦合薄膜和包含其的磁阻元件
公开(公告)号：US6055135A
公开(公告)日：2000-04-25
申请号：US823094
申请日：1997-03-24
申请人： Kazuaki Fukamichi , Yutaka Shimada , Osamu Kitakami , Kim Jek Jun , Hiroko Uyama , Akihiro Makino , Naoya Hasegawa
发明人： Kazuaki Fukamichi , Yutaka Shimada , Osamu Kitakami , Kim Jek Jun , Hiroko Uyama , Akihiro Makino , Naoya Hasegawa
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3932 , G11B5/3967 , H01F10/3218 , Y10T428/1121
摘要： The present invention aims to provide an excellent exchange coupling thin film consisting of a completely novel material other than FeMn or NiMn and having excellent corrosion resistance and high resistivity, and a magnetoresistive element and a magnetic head each of which include the exchange coupling thin film. The exchange coupling thin film includes an antiferromagnetic film mainly composed of a crystal phase of a body-centered cubic structure and containing Cr and element M where element M contains at least one element of the 3B group elements in the Periodic Table, or Al, Ga or In, and a ferromagnetic film containing at least one of Fe, Ne, and Co, both films being laminated in contact with each other, wherein magnetic exchange coupling is generated in the interface between the antiferromagnetic film and the ferromagnetic film.
摘要翻译：本发明的目的在于提供一种由FeMn或NiMn以外的完全新颖的材料构成且具有优异的耐腐蚀性和高电阻率的优异的交换耦合薄膜，以及包括交换耦合薄膜的磁阻元件和磁头。交换耦合薄膜包括主体由体心立方结构的晶相和含有元素M的元素M构成的反铁磁性膜，元素M含有元素周期表中的3B族元素的至少一种元素，或Al，Ga 或In，以及包含Fe，Ne和Co中的至少一种的铁磁膜，两个膜彼此层压，其中在反铁磁膜和铁磁膜之间的界面中产生磁交换耦合。

59. 发明授权

US4608228A Ni-Fe magnetic head including 1.5-2% Ta 失效
标题翻译： Ni-Fe磁头包括1.5-2％Ta
公开(公告)号：US4608228A
公开(公告)日：1986-08-26
申请号：US562716
申请日：1983-12-19
申请人： Akihiro Makino , Koichi Mukasa
发明人： Akihiro Makino , Koichi Mukasa
IPC分类号： C22C19/03 , G11B5/127 , G11B5/147 , G11B5/255 , H01F1/14
CPC分类号： H01F1/14 , C22C19/03
摘要： A magnetic head having excellent abrasion resistance and improved working life by using a core made of permalloy (Fe-Ni) comprising a ternary alloy, in which the tantalum content in the alloy is within a range from about 1.5% to about 3% by weight, or a quaternary or pentanary alloy, in which niobium or niobium and titanium is further contained in a slight amount.
摘要翻译：一种磁头，其通过使用包含三元合金的坡莫合金（Fe-Ni）制成的芯，其中合金中的钽含量在约1.5重量％至约3重量％的范围内，具有优异的耐磨性和改善的使用寿命，或其中稍微含有铌或铌和钛的四价或五元合金。

60. 发明授权

US08277579B2 Amorphous alloy composition 有权
标题翻译：无定形合金组成
公开(公告)号：US08277579B2
公开(公告)日：2012-10-02
申请号：US12448005
申请日：2007-12-04
申请人： Akihiro Makino
发明人： Akihiro Makino
IPC分类号： H01F1/153 , C22C45/02
CPC分类号： C22C45/02 , H01F1/15308
摘要： An amorphous alloy has a specific composition of FeaBbSicPxCuy. Here, the values a-c, x, and y meet such conditions that 73 at %≦a≦85 at %, 9.65 at %≦b≦22 at %, 9.65 at %≦b+c≦24.75 at %, 0.25 at %≦x≦5 at %, 0 at %≦y≦0.35 at %, and 0≦y/x≦0.5.
摘要翻译：非晶合金具有FeaBbSicPxCuy的特定组成。在这里，值ac，x和y满足以下条件：73at％＆nlE; a＆nlE; 85 at％，9.65 at％＆nlE; b＆nlE; 22 at％，9.65at％＆amp; ll; b + c＆nlE; 24.75at％ at％＆nlE; x＆nlE; 5 at％，0 at％＆nlE; y＆nlE; 0.35 at％，0＆nlE; y / x＆nlE; 0.5。

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