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51. 发明申请

US20110299560A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20110299560A1
公开(公告)日：2011-12-08
申请号：US12837291
申请日：2010-07-15
申请人： Shimpei TAKAGI , Yusuke YOSHIZUMI , Koji KATAYAMA , Masaki UENO , Takatoshi IKEGAMI
发明人： Shimpei TAKAGI , Yusuke YOSHIZUMI , Koji KATAYAMA , Masaki UENO , Takatoshi IKEGAMI
IPC分类号： H01S5/10 , H01S5/323 , H01L33/32
CPC分类号： H01S5/1085 , B82Y20/00 , H01L33/0045 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/0208 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： In the method for fabricating a III-nitride semiconductor laser device, a substrate product is formed, and the substrate product has a laser structure including a substrate that is made of a hexagonal III-nitride semiconductor and has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface, and thereafter a first surface of the substrate product is scribed to form a scribed mark extending in a direction of the a-axis of the hexagonal III-nitride semiconductor. After forming the scribed mark, breakup of the substrate product is carried out by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region. This step results in forming another substrate product and a laser bar. The substrate product is divided into two, the first region and the second region, by a predetermined reference line, and the first and second regions are adjacent to each other. The laser bar has first and second end faces that extend from the first surface to a second surface and are formed by the breakup. The first and second end faces form a laser cavity of the III-nitride semiconductor laser device. The c-axis of the hexagonal III-nitride semiconductor of the substrate is inclined at an angle ALPHA with respect to a normal axis toward the m-axis of the hexagonal III-nitride semiconductor. The first and second end faces intersect with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and the normal axis.
摘要翻译：在制造III族氮化物半导体激光器件的方法中，形成衬底产品，并且衬底产品具有包括由六边形III族氮化物半导体制成并具有半极性主表面的衬底的激光结构，并且半导体区域形成在半极性主表面上，然后刻划基板产品的第一表面以形成在六边形III族氮化物半导体的a轴方向上延伸的划线标记。在形成刻划之后，通过在衬底产品的第二区域压制同时支撑衬底产品的第一区域但不支撑第二区域来进行衬底产品的分解。该步骤导致形成另一衬底产品和激光棒。基板产品通过预定的参考线分成两个，第一区域和第二区域，并且第一和第二区域彼此相邻。激光棒具有从第一表面延伸到第二表面并且通过分解形成的第一和第二端面。第一和第二端面形成III族氮化物半导体激光器件的激光腔。基板的六边形III族氮化物半导体的c轴相对于向六边形III族氮化物半导体的m轴的法线轴线倾斜角度ALPHA。第一和第二端面与由六边形III族氮化物半导体的m轴和法线轴定义的m-n平面相交。

52. 发明申请

US20110292956A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 失效
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20110292956A1
公开(公告)日：2011-12-01
申请号：US13209054
申请日：2011-08-12
申请人： Shimpei TAKAGI , Yusuke YOSHIZUMI , Koji KATAYAMA , Masaki UENO , Takatoshi IKEGAMI
发明人： Shimpei TAKAGI , Yusuke YOSHIZUMI , Koji KATAYAMA , Masaki UENO , Takatoshi IKEGAMI
IPC分类号： H01S5/323 , H01S5/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/2201 , H01S5/3202
摘要： Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch 113a and others, are formed at four respective corners of a first surface 13a located on the anode side of a group-III nitride semiconductor laser device 11. The notch 113a or the like is a part of a scribed groove provided for separation of the device 11. The scribed grooves are formed with a laser scriber and the shape of the scribed grooves is adjusted by controlling the laser scriber. For example, a ratio of the depth of the notch 113a or the like to the thickness of the group-III nitride semiconductor laser device 11 is not less than 0.05 and not more than 0.4, a tilt of a side wall surface at an end of the notch 113a is not less than 45° and not more than 85°, and a tilt of a side wall surface at an end of the notch 113b is not less than 10° and not more than 30°.
摘要翻译：提供了具有激光腔的III族氮化物半导体激光器件，其能够在六边形III族氮化物的半极性表面上实现低阈值电流，以及稳定地制造III族氮化物半导体激光器件的方法。在位于III族氮化物半导体激光装置11的阳极侧的第一表面13a的四个相应的角部处形成缺口，例如凹口113a等。凹口113a等是设置在划线槽中的一部分用于分离设备11.划线槽由激光划线器形成，并且通过控制激光划线机来调节划线槽的形状。例如，凹口113a的深度等于III族氮化物半导体激光器件11的厚度的比率不小于0.05且不大于0.4，则侧壁表面的端部的倾斜度凹口113a不小于45°并且不大于85°，并且凹口113b的端部处的侧壁表面的倾斜度不小于10°并且不大于30°。

53. 发明申请

US20110176569A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 失效
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20110176569A1
公开(公告)日：2011-07-21
申请号：US12836281
申请日：2010-07-14
申请人： Shimpei TAKAGI , Yusuke YOSHIZUMI , Koji KATAYAMA , Masaki UENO , Takatoshi IKEGAMI
发明人： Shimpei TAKAGI , Yusuke YOSHIZUMI , Koji KATAYAMA , Masaki UENO , Takatoshi IKEGAMI
IPC分类号： H01S5/323 , H01L33/30
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/0014 , H01S5/0202 , H01S5/1082 , H01S5/3202 , H01S5/3211
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure 13, a first surface 13a is a surface opposite to a second surface 13b and first and second fractured faces 27, 29 extend each from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. A scribed mark SM1 extending from the edge 13c to the edge 13d is made, for example, at one end of the first fractured face 27, and the scribed mark SM1 or the like has a depressed shape extending from the edge 13c to the edge 13d. The fractured faces 27, 29 are not formed by dry etching and thus are different from the conventional cleaved facets such as c-planes, m-planes, or a-planes. It is feasible to use emission of a band transition enabling a low threshold current.
摘要翻译：本发明提供一种III族氮化物半导体激光器件，其具有激光腔，能够在支撑基座的半极性表面上具有低阈值电流，六边形III族氮化物的c轴朝向m轴倾斜。在激光结构13中，第一表面13a是与第二表面13b相对的表面，第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。从边缘13c延伸到边缘13d的划线标记SM1例如在第一断裂面27的一端形成，划线标记SM1等具有从边缘13c延伸到边缘13d的凹陷形状。断裂面27,29不是通过干蚀刻形成的，因此与常规的切割面不同，例如c面，m面或者a平面。使用能够实现低阈值电流的频带转换的发射是可行的。

54. 发明申请

US20110111578A1 METHOD OF FORMING p-TYPE GALLIUM NITRIDE BASED SEMICONDUCTOR, METHOD OF FORMING NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF FORMING EPITAXIAL WAFER 有权
标题翻译：形成p型氮化镓基半导体的方法，形成氮化物半导体器件的方法和形成外延晶体的方法
公开(公告)号：US20110111578A1
公开(公告)日：2011-05-12
申请号：US12970382
申请日：2010-12-16
申请人： Masaki UENO , Yusuke YOSHIZUMI , Takao NAKAMURA
发明人： Masaki UENO , Yusuke YOSHIZUMI , Takao NAKAMURA
IPC分类号： H01L21/20
CPC分类号： H01L21/02389 , C30B25/183 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007
摘要： A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type dopant. A GaN semiconductor region 17 containing a p-type dopant is formed on a supporting base 13 in a reactor 10. An organometallic source and ammonia are supplied to the reactor 10 to grow the GaN semiconductor layer 17 on a GaN semiconductor layer 15. The GaN semiconductor is doped with a p-type dopant. Examples of the p-type dopant include magnesium. After the GaN semiconductor regions 15 and 17 are grown, an atmosphere 19 containing at least one of monomethylamine and monoethylamine is prepared in the reactor 10. After the atmosphere 19 is prepared, a substrate temperature is decreased from the growth temperature of the GaN semiconductor region 17. When the substrate temperature is lowered to room temperature after this film formation, a p-type GaN semiconductor 17a and an epitaxial wafer E has been fabricated.
摘要翻译：提供了一种形成无激活退火的p型氮化镓基半导体的方法，该方法可以提供掺杂有p型掺杂剂的氮化镓基半导体。在反应器10中的支撑基底13上形成含有p型掺杂剂的GaN半导体区17.将有机金属源和氨供给反应器10，以在GaN半导体层15上生长GaN半导体层17。半导体掺杂有p型掺杂剂。 p型掺杂剂的实例包括镁。在GaN半导体区域15和17生长之后，在反应器10中制备含有一甲胺和单乙胺中的至少一种的气氛19.制备气氛19后，衬底温度从GaN半导体区域的生长温度降低当成膜后，当衬底温度降至室温时，制造了p型GaN半导体17a和外延晶片E.

55. 发明申请

US20110164638A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF ESTIMATING DAMAGE FROM FORMATION OF SCRIBE GROOVE 有权
公开(公告)号：US20110164638A1
公开(公告)日：2011-07-07
申请号：US12837209
申请日：2010-07-15
申请人： Yusuke YOSHIZUMI , Shimpei TAKAGI , Takatoshi IKEGAMI , Masaki UENO , Koji KATAYAMA
发明人： Yusuke YOSHIZUMI , Shimpei TAKAGI , Takatoshi IKEGAMI , Masaki UENO , Koji KATAYAMA
IPC分类号： H01S5/30 , H01S5/323 , G01N21/00 , H01L21/78 , H01L21/66
CPC分类号： H01S5/3202 , B82Y20/00 , G01N21/62 , H01S5/0014 , H01S5/0202 , H01S5/1082 , H01S5/1085 , H01S5/20 , H01S5/2009 , H01S5/34333
摘要： In a group-III nitride semiconductor laser device, a laser structure includes a support base comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface, and a semiconductor region provided on the semipolar principal surface of the support base. An electrode is provided on the semiconductor region of the laser structure. An angle between a normal axis to the semipolar principal surface and the c-axis of the hexagonal group-III nitride semiconductor is in a range of not less than 45° and not more than 80° or in a range of not less than 100° and not more than 135°. The laser structure includes a laser stripe extending in a direction of a waveguide axis above the semipolar principal surface of the support base. The laser structure includes first and second surfaces and the first surface is a surface opposite to the second surface. The laser structure includes first and second fractured faces intersecting with an m-n plane defined by the m-axis of the hexagonal group-III nitride semiconductor and the normal axis, a laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface. The waveguide axis extends from one to the other of the first and second fractured faces. The laser structure has first and second recesses provided each at a portion of the edge of the first surface in the first fractured face. The first and second recesses extend from the first surface of the laser structure, and bottom ends of the first and second recesses are located apart from the edge of the second surface of the laser structure. The first recess has an end at the first surface and the second recess has an end at the first surface. A first distance between the laser stripe and the end of the first recess is smaller than a second distance between the laser stripe and the end of the second recess.

56. 发明申请

US20110158276A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 失效
标题翻译： III族氮化物半导体激光器件，以及制备III族氮化物半导体激光器件的方法
公开(公告)号：US20110158276A1
公开(公告)日：2011-06-30
申请号：US12837269
申请日：2010-07-15
申请人： Shimpei TAKAGI , Yusuke YOSHIZUMI , Koji KATAYAMA , Masaki UENO , Takatoshi IKEGAMI
发明人： Shimpei TAKAGI , Yusuke YOSHIZUMI , Koji KATAYAMA , Masaki UENO , Takatoshi IKEGAMI
IPC分类号： H01S5/343 , H01L21/304
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/1082 , H01S5/1085 , H01S5/16 , H01S5/3202 , H01S2301/14
摘要： In a III-nitride semiconductor laser device, a laser structure includes a support base comprised of a hexagonal III-nitride semiconductor and having a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface of the support base. An electrode is provided on the semiconductor region of the laser structure. The c-axis of the hexagonal III-nitride semiconductor of the support base is inclined at an angle ALPHA with respect to a normal axis toward the m-axis of the hexagonal III-nitride semiconductor. The angle ALPHA is in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and the normal axis. A laser cavity of the III-nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces, and the first surface is opposite to the second surface. Each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface. The support base of the laser structure has a recess provided at a portion of the edge of the first surface in the first fractured face. The recess extends from a back surface of the support base, and an end of the recess is apart from the edge of the second surface of the laser structure.
摘要翻译：在III族氮化物半导体激光器件中，激光器结构包括由六方晶III族氮化物半导体构成并具有半极性主表面的支撑基底和设置在支撑基底的半极性主表面上的半导体区域。在激光结构的半导体区域上设置电极。支撑基体的六边形III族氮化物半导体的c轴相对于正六边形III族氮化物半导体的m轴的法线轴线倾斜一角度ALPHA。角度ALPHA在不小于45度且不大于80度的范围内或在不小于100度且不超过135度的范围内。激光结构包括与由六边形III族氮化物半导体的m轴和法线轴限定的m-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。激光结构包括第一表面和第二表面，并且第一表面与第二表面相对。第一和第二断裂面中的每一个从第一表面的边缘延伸到第二表面的边缘。激光结构的支撑基座具有设置在第一断裂面中的第一表面的边缘的一部分处的凹部。凹部从支撑基座的后表面延伸，并且凹部的端部与激光结构的第二表面的边缘分开。

57. 发明申请

US20110128983A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
公开(公告)号：US20110128983A1
公开(公告)日：2011-06-02
申请号：US12836253
申请日：2010-07-14
申请人： Shimpei TAKAGI , Yusuke YOSHIZUMI , Koji KATAYAMA , Masaki UENO , Takatoshi IKEGAMI
发明人： Shimpei TAKAGI , Yusuke YOSHIZUMI , Koji KATAYAMA , Masaki UENO , Takatoshi IKEGAMI
IPC分类号： H01S5/323 , H01L33/30 , H01S5/22
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/2201 , H01S5/3202
摘要： Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch 113a and others, are formed at four respective corners of a first surface 13a located on the anode side of a group-III nitride semiconductor laser device 11. The notch 113a or the like is a part of a scribed groove provided for separation of the device 11. The scribed grooves are formed with a laser scriber and the shape of the scribed grooves is adjusted by controlling the laser scriber. For example, a ratio of the depth of the notch 113a or the like to the thickness of the group-III nitride semiconductor laser device 11 is not less than 0.05 and not more than 0.4, a tilt of a side wall surface at an end of the notch 113a is not less than 45° and not more than 85°, and a tilt of a side wall surface at an end of the notch 113b is not less than 10° and not more than 30°.

58. 发明申请

US20100279495A1 METHOD OF FORMING p-TYPE GALLIUM NITRIDE BASED SEMICONDUCTOR, METHOD OF FORMING NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF FORMING EPITAXIAL WAFER 有权
标题翻译：形成p型氮化镓基半导体的方法，形成氮化物半导体器件的方法和形成外延晶体的方法
公开(公告)号：US20100279495A1
公开(公告)日：2010-11-04
申请号：US12771018
申请日：2010-04-30
申请人： Masaki UENO , Yusuke YOSHIZUMI , Takao NAKAMURA
发明人： Masaki UENO , Yusuke YOSHIZUMI , Takao NAKAMURA
IPC分类号： H01L21/203
CPC分类号： H01L21/02389 , C30B25/183 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007
摘要： A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type dopant. A GaN semiconductor region 17 containing a p-type dopant is formed on a supporting base 13 in a reactor 10. An organometallic source and ammonia are supplied to the reactor 10 to grow the GaN semiconductor layer 17 on a GaN semiconductor layer 15. The GaN semiconductor is doped with a p-type dopant. Examples of the p-type dopant include magnesium. After the GaN semiconductor regions 15 and 17 are grown, an atmosphere 19 containing at least one of monomethylamine and monoethylamine is prepared in the reactor 10. After the atmosphere 19 is prepared, a substrate temperature is decreased from the growth temperature of the GaN semiconductor region 17. When the substrate temperature is lowered to room temperature after this film formation, a p-type GaN semiconductor 17a and an epitaxial wafer E has been fabricated.
摘要翻译：提供了一种形成无激活退火的p型氮化镓基半导体的方法，该方法可以提供掺杂有p型掺杂剂的氮化镓基半导体。在反应器10中的支撑基底13上形成含有p型掺杂剂的GaN半导体区17.将有机金属源和氨供给反应器10，以在GaN半导体层15上生长GaN半导体层17。半导体掺杂有p型掺杂剂。 p型掺杂剂的实例包括镁。在GaN半导体区域15和17生长之后，在反应器10中制备含有一甲胺和单乙胺中的至少一种的气氛19.制备气氛19后，衬底温度从GaN半导体区域的生长温度降低当成膜后，当衬底温度降至室温时，制造了p型GaN半导体17a和外延晶片E.

59. 发明申请

US20100078648A1 GALLIUM NITRIDE-BASED EPITAXIAL WAFER AND METHOD OF FABRICATING EPITAXIAL WAFER 有权
标题翻译：基于氮化镓的外延波形及其制造外延波形的方法
公开(公告)号：US20100078648A1
公开(公告)日：2010-04-01
申请号：US12565290
申请日：2009-09-23
申请人： Yusuke YOSHIZUMI , Masaki UENO , Takao NAKAMURA
发明人： Yusuke YOSHIZUMI , Masaki UENO , Takao NAKAMURA
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L33/32 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L33/16
摘要： A gallium nitride-based epitaxial wafer for a nitride light-emitting device comprises a gallium nitride substrate having a primary surface, a gallium nitride-based semiconductor film provided on the primary surface of the gallium nitride substrate, and, an active layer provided on the gallium nitride-based semiconductor film, the active layer having a quantum well structure. The active layer includes a well layer of a gallium nitride-based semiconductor. The gallium nitride-based semiconductor contains indium as a Group III element. A normal line of the primary surface and a C-axis of the gallium nitride substrate form an off angle with each other. The off angle is distributed on the primary surface, and the off angle monotonically increases on the line that extends from one point to another point through a center point of the primary surface of the gallium nitride substrate. The one point and the other point are on an edge of the primary surface, and indium contents of the well layer defined at n points (n: integer) on the line monotonically decrease in a direction from the one point to the other point. The thickness values of the well layer defined at the n points monotonically increase in the direction.
摘要翻译：用于氮化物发光器件的氮化镓基外延晶片包括具有主表面的氮化镓衬底，设置在氮化镓衬底的主表面上的氮化镓基半导体膜，以及设置在氮化镓衬底上的有源层氮化镓基半导体膜，有源层具有量子阱结构。有源层包括氮化镓基半导体的阱层。氮化镓系半导体含有铟作为III族元素。主表面的法线和氮化镓衬底的C轴彼此形成偏离角。偏角分布在主表面上，偏角在从氮化镓衬底的主表面的中心点从一点延伸到另一点的直线上单调增加。一点和另一点位于主表面的边缘，在线上n点（n：整数）上定义的阱层的铟含量在从一点到另一点的方向上单调减小。在n点定义的阱层的厚度值在方向上单调增加。

60. 发明申请

US20130051418A1 GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译： III类氮化物半导体激光器件
公开(公告)号：US20130051418A1
公开(公告)日：2013-02-28
申请号：US13556944
申请日：2012-07-24
申请人： Takamichi SUMITOMO , Masaki UENO , Yusuke YOSHIZUMI , Takahisa YOSHIDA , Masahiro ADACHI
发明人： Takamichi SUMITOMO , Masaki UENO , Yusuke YOSHIZUMI , Takahisa YOSHIDA , Masahiro ADACHI
IPC分类号： H01S5/323
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2206 , H01S5/2231 , H01S5/3054 , H01S5/3202
摘要： A group-III nitride semiconductor laser device includes an n-type nitride semiconductor region, an active layer provided over the n-type nitride semiconductor region, a first p-type nitride semiconductor region provided over the active layer, a current confinement layer which is provided over the first p-type nitride semiconductor region and has an opening extending in a optical cavity direction, and a second p-type nitride semiconductor region re-grown on the first nitride semiconductor region and the current confinement layer after the formation of the opening of the current confinement layer. The interface between the first p-type nitride semiconductor region and the second p-type nitride semiconductor region includes a semi-polar plane. At least one of the first or second p-type semiconductor regions includes a highly doped p-type semiconductor layer forming an interface with the first and second p-type semiconductor regions and have a p-type impurity level of 1×1020 cm−3 or greater.
摘要翻译： III族氮化物半导体激光器件包括n型氮化物半导体区域，设置在n型氮化物半导体区域上的有源层，设置在有源层上的第一p型氮化物半导体区域，电流限制层，设置在第一p型氮化物半导体区域上并且具有在光腔方向上延伸的开口，以及在形成开口之后在第一氮化物半导体区域和电流限制层上再生长的第二p型氮化物半导体区域的当前限制层。第一p型氮化物半导体区域和第二p型氮化物半导体区域之间的界面包括半极性平面。第一或第二p型半导体区域中的至少一个包括形成与第一和第二p型半导体区域的界面的高掺杂p型半导体层，并且具有1×1020cm-3的p型杂质水平或更大。

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