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51. 发明申请

US20050056938A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20050056938A1
公开(公告)日：2005-03-17
申请号：US10901998
申请日：2004-07-30
申请人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta
发明人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/532 , H01L21/4763
CPC分类号： H01L21/7685 , H01L21/76838 , H01L21/76852 , H01L23/53219 , H01L23/53223 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/05556 , H01L2224/48463 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/351 , H01L2924/00
摘要： A semiconductor device has a wiring structure in which an insulating layer, a wiring layer made of Al and containing at least either Au or Ag as an additional element, and a protecting layer are sequentially laminated on a substrate, so that a peel-off does not occur at an interface between the Al film and a substratum insulative material in an Al wiring structure made of Al as a main component material.
摘要翻译：半导体器件具有其中绝缘层，由Al制成的并且至少包含Au或Ag作为附加元素的布线层和保护层的布线结构，顺序层压在基板上，使得剥离在由Al作为主要成分材料制成的Al布线结构中的Al膜和基底绝缘材料之间的界面处不发生。

52. 发明申请

US20050269662A1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050269662A1
公开(公告)日：2005-12-08
申请号：US11139002
申请日：2005-05-25
申请人： Norio Ishitsuka , Jun Tanaka , Tomio Iwasaki , Hiroyuki Ohta
发明人： Norio Ishitsuka , Jun Tanaka , Tomio Iwasaki , Hiroyuki Ohta
IPC分类号： H01L21/76 , H01L21/312 , H01L21/316 , H01L21/8234 , H01L21/8247 , H01L27/08 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792
CPC分类号： H01L21/823481 , H01L21/02134 , H01L21/02137 , H01L21/02203 , H01L21/3124 , H01L21/31662 , H01L29/7833
摘要： To suppress occurrence of dislocation in a substrate of a semiconductor device at an end portion of a gate electrode. Provided is a semiconductor device having a plurality of element formation regions formed over the main surface of a semiconductor substrate, an element isolation trench located between the element formation regions and having an element isolation insulating film embedded therein, and a gate insulating film, a gate electrode and a plurality of interconnect layers formed thereabove, each formed in the element formation region, wherein the element isolation trench has a thermal oxide film formed between the semiconductor substrate and the element isolation insulating film, and the element isolation film has a great number of micro-pores formed inside thereof and is more porous than the thermal oxide film.
摘要翻译：为了抑制在栅电极的端部处的半导体器件的衬底中的位错的发生。提供了一种半导体器件，其具有形成在半导体衬底的主表面上的多个元件形成区域，位于元件形成区域之间并且具有嵌入元件隔离绝缘膜的元件隔离沟槽，以及栅极绝缘膜，栅极电极和形成在其上的多个互连层，各自形成在元件形成区域中，其中元件隔离沟槽具有形成在半导体衬底和元件隔离绝缘膜之间的热氧化膜，并且元件隔离膜具有大量在其内形成的微孔比热氧化膜多孔。

53. 发明申请

US20150155563A1 LITHIUM ION SECONDARY BATTERY 有权
标题翻译：锂离子二次电池
公开(公告)号：US20150155563A1
公开(公告)日：2015-06-04
申请号：US14404350
申请日：2012-05-31
申请人： Tomio Iwasaki
发明人： Tomio Iwasaki
IPC分类号： H01M4/62 , H01M10/0525 , H01M4/505 , H01M4/485 , H01M4/525
CPC分类号： H01M4/622 , H01M4/131 , H01M4/133 , H01M4/485 , H01M4/505 , H01M4/525 , H01M4/62 , H01M10/0525 , H01M2220/30
摘要： A lithium ion secondary battery includes a binder that binds an active material to a current collector in the positive electrode or negative electrodes or both. The binder contains a base material including a resin having a benzene ring, and a polyacene additive selected from the group consisting of naphthalene, anthracene, tetracene, and derivatives thereof. The active material is a carbonaceous material or a lithium-containing composite oxide having a crystal structure in which a distance between nearest oxygen atoms is 0.19 to 0.29 nm. Adhesion of the binder to the active material during the manufacturing of the lithium ion secondary battery is led to a closest-packed crystal plane in the crystal structure of the active material, so that inhibition of moving of lithium ions in and out of the active material due to the binder may be reduced.
摘要翻译：锂离子二次电池包括将活性物质与正极或负极中的集电体结合的粘合剂或两者。粘合剂含有包含具有苯环的树脂的基材和选自萘，蒽，并四苯及其衍生物的多并苯添加剂。活性物质是具有晶体结构的碳质材料或含锂复合氧化物，其中最近的氧原子之间的距离为0.19〜0.29nm。在制造锂离子二次电池期间，粘合剂对活性物质的粘附性导致活性物质的晶体结构中最接近填充的晶面，从而抑制锂离子进出活性物质的移动由于粘合剂可能会减少。

54. 发明授权

US08866120B2 Semiconductor memory 有权
公开(公告)号：US08866120B2
公开(公告)日：2014-10-21
申请号：US13314165
申请日：2011-12-07
申请人： Yuichi Matsui , Nozomu Matsuzaki , Norikatsu Takaura , Naoki Yamamoto , Hideyuki Matsuoka , Tomio Iwasaki
发明人： Yuichi Matsui , Nozomu Matsuzaki , Norikatsu Takaura , Naoki Yamamoto , Hideyuki Matsuoka , Tomio Iwasaki
IPC分类号： H01L47/00 , H01L45/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

55. 发明授权

US07846567B2 Magnetic disk for hard disk drives 有权
标题翻译：用于硬盘驱动器的磁盘
公开(公告)号：US07846567B2
公开(公告)日：2010-12-07
申请号：US12127856
申请日：2008-05-28
申请人： Yasutaka Okura , Tomio Iwasaki
发明人： Yasutaka Okura , Tomio Iwasaki
IPC分类号： G11B5/70
CPC分类号： G11B5/855
摘要： The present invention provides a magnetic disk in a discrete track medium and a patterned medium, which prevents the loss of the magnetically recorded data when a head of a magnetic disk device contacts the magnetic disk, and a manufacturing method thereof. A magnetic disk has a protrusion as a non-magnetic member formed on a disk surface to prevent a head from being in contact with a recording section. When the protrusion formed in a disk substrate collides against the head, the protrusion 7 does not collapse, and accordingly, the recording layer is not damaged. Alternatively, concave and convex portions are formed on the substrate surface to use the convex portion as the protrusion.
摘要翻译：本发明提供了一种分立轨道介质中的磁盘和图案化介质，其防止当磁盘装置的磁头与磁盘接触时磁记录数据的损失及其制造方法。磁盘具有作为形成在盘表面上的非磁性构件的突起，以防止头部与记录部分接触。当形成在盘基板上的突起与头部碰撞时，突起7不会折叠，因此记录层不被损坏。或者，在基板表面上形成凹凸部，使用凸部作为突出部。

56. 发明授权

US07771853B2 Patterned magnetic medium, magnetic recording medium and magnetic storage device 有权
标题翻译：图案磁介质，磁记录介质和磁存储装置
公开(公告)号：US07771853B2
公开(公告)日：2010-08-10
申请号：US11956424
申请日：2007-12-14
申请人： Tomio Iwasaki
发明人： Tomio Iwasaki
IPC分类号： G11B5/66
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/72 , G11B5/743 , G11B5/855
摘要： A patterned magnetic medium includes: a substrate; a soft magnetic underlying film, a nonmagnetic film, an intermediate film and a recording layer which are formed on a principal surface of the substrate; a first protective film formed in contact with the recording film; a second protective film formed in contact with the first protective film; and a third protective film formed in contact with the second protective film. Moreover, the recording layer has a pattern structure formed by making a magnetic film come into contact with a concavo-convex pattern of a nonmagnetic material. The first protective film and the third protective film include carbon as the main constituent element and the second protective film is a wet-coated polymer film. High adhesion between carbon and the wet-coated polymer film can prevent peeling off and the wet-coated polymer film as a cushioning material absorbs impact.
摘要翻译：图案化磁介质包括：基板; 形成在基板的主表面上的软磁性底膜，非磁性膜，中间膜和记录层; 形成为与记录膜接触的第一保护膜; 形成为与第一保护膜接触的第二保护膜; 和与第二保护膜接触形成的第三保护膜。此外，记录层具有通过使磁性膜与非磁性材料的凹凸图案接触而形成的图案结构。第一保护膜和第三保护膜包括碳作为主要构成元素，第二保护膜是湿涂聚合物膜。碳与湿涂层聚合物膜之间的高附着力可以防止剥离，并且作为缓冲材料的湿涂聚合物膜吸收冲击。

57. 发明授权

US07586390B2 Bulk acoustic wave resonator, bulk acoustic wave filter, RF module including bulk acoustic wave resonator and/or filter, and bulk acoustic wave oscillator 失效
标题翻译：体声波谐振器，体声波滤波器，包括体声波谐振器和/或滤波器的RF模块以及体声波振荡器
公开(公告)号：US07586390B2
公开(公告)日：2009-09-08
申请号：US11345538
申请日：2006-02-02
申请人： Hisanori Matsumoto , Tomio Iwasaki , Kengo Asai , Nobuhiko Shibagaki
发明人： Hisanori Matsumoto , Tomio Iwasaki , Kengo Asai , Nobuhiko Shibagaki
IPC分类号： H03H9/15 , H03H9/54 , H03H9/13
CPC分类号： H03H9/02086 , H03H9/174 , H03H9/175
摘要： A bulk acoustic wave resonator which has excellent elasticity and high electromechanical energy conversion efficiency. A bulk acoustic wave resonator comprises a substrate, a lower electrode formed on the substrate, an interlayer formed on the lower electrode layer, a piezoelectric layer formed on the interlayer, and an upper electrode layer formed on the piezoelectric layer. Moreover, both the first lattice mismatch, which is determined between a short edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a short edge of the lattice constituting a closest packed plane of a material consisting of a piezoelectric layer, and the second lattice mismatch, which is determined between a long edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a long edge of the lattice constituting a closest packed plane of a material consisting of the piezoelectric layer, are 7% or less, and a lower electrode layer is a material in which the value of the elastic stiffness C33 is 300 GN/m2 or more.
摘要翻译：具有优异弹性和高机电能量转换效率的体声波谐振器。体声波谐振器包括基板，形成在基板上的下电极，形成在下电极层上的中间层，形成在中间层上的压电层，以及形成在压电层上的上电极层。此外，在构成由中间层构成的材料的最接近的填充平面的晶格的短边缘和构成由压电层构成的材料的最接近的填充平面的晶格的短边缘之间确定的第一晶格失配以及在构成由中间层构成的材料的最接近的填充平面的格子的长边和构成由压电体构成的材料的最接近的填充面的格子的长边缘之间确定的第二晶格失配，为7％以下，下部电极层为弹性刚度C33的值为300Ng / m 2以上的材料。

58. 发明申请

US20080188043A1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080188043A1
公开(公告)日：2008-08-07
申请号：US12005444
申请日：2007-12-26
申请人： Norio Ishitsuka , Nobuyoshi Hattori , Tomio Iwasaki
发明人： Norio Ishitsuka , Nobuyoshi Hattori , Tomio Iwasaki
IPC分类号： H01L21/336
CPC分类号： H01L21/26506 , H01L21/26513 , H01L29/6653 , H01L29/6656 , H01L29/6659
摘要： After a gate electrode is formed on a main surface of a semiconductor substrate, low concentration layers are formed on the main surface of the semiconductor substrate by implanting impurities therein, with using the gate electrode as a mask. Thereafter, first sidewalls and second sidewalls are formed on the both side surfaces of the gate electrode. Subsequently, nitrogen or the like is ion-implanted into the semiconductor substrate, with using the first sidewalls, the second sidewalls and the gate electrode as a mask, thereby forming a crystallization-control region (CCR) on the main surface of the semiconductor substrate. Then, after the second sidewalls are removed, high concentration layers for a source and a drain are formed on the main surface of the semiconductor substrate.
摘要翻译：在半导体衬底的主表面上形成栅电极之后，通过使用栅电极作为掩模，在半导体衬底的主表面上注入杂质，形成低浓度层。此后，在栅电极的两个侧表面上形成第一侧壁和第二侧壁。随后，使用第一侧壁，第二侧壁和栅电极作为掩模，将氮等离子注入到半导体衬底中，从而在半导体衬底的主表面上形成结晶化控制区域（CCR）。然后，在去除第二侧壁之后，在半导体衬底的主表面上形成用于源极和漏极的高浓度层。

59. 发明申请

US20080006851A1 Non-volatile phase-change memory and manufacturing method thereof 审中-公开
标题翻译：非易失性相变存储器及其制造方法
公开(公告)号：US20080006851A1
公开(公告)日：2008-01-10
申请号：US11825401
申请日：2007-07-06
申请人： Hiroshi Moriya , Tomio Iwasaki
发明人： Hiroshi Moriya , Tomio Iwasaki
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： In a non-volatile phase-change memory comprising: an interlayer dielectric film and a plug formed on one main surface side of a silicon substrate; a phase-change film which can take a different electric resistivity depending on a phase change and is provided on surfaces of the interlayer dielectric film and the plug; and an upper electrode film formed on an upper surface of the phase-change film, a relation between a film thickness of the phase-change film and an amount of protrusion of the upper electrode film from the plug is set to 0.3≦L/T≦1. Thus, a density of current flowing through the phase-change film near the outer periphery of the plug is reduced, thereby suppressing migration and enabling rewriting with low energy. Accordingly, a reliable non-volatile phase-change memory can be achieved.
摘要翻译：一种非易失性相变存储器，包括：层间电介质膜和形成在硅衬底的一个主表面侧上的插塞; 可以根据相变取得不同的电阻率并设置在层间绝缘膜和插头的表面上的相变膜; 以及形成在相变膜的上表面上的上电极膜，相变膜的膜厚与上电极膜与插塞的突出量之间的关系设定为0.3 <= L / T <= 1。因此，流过插塞外周附近的相变膜的电流密度降低，从而抑制迁移并能够以低能量进行重写。因此，可以实现可靠的非易失性相变存储器。

60. 发明申请

US20060127703A1 Perpendicular magnetic recording medium for high density recording and manufacturing of the same 失效
标题翻译：用于高密度记录和制造的垂直磁记录介质
公开(公告)号：US20060127703A1
公开(公告)日：2006-06-15
申请号：US11295005
申请日：2005-12-05
申请人： Ikuko Takekuma , Reiko Arai , Yoko Ogawa , Yoshiyuki Hirayama , Yuzuru Hosoe , Tomio Iwasaki
发明人： Ikuko Takekuma , Reiko Arai , Yoko Ogawa , Yoshiyuki Hirayama , Yuzuru Hosoe , Tomio Iwasaki
IPC分类号： G11B5/66 , C23C14/00
CPC分类号： C23C14/568 , C23C14/025 , C23C14/0658 , C23C14/0688 , C23C14/584 , G11B5/65 , G11B5/732
摘要： Embodiments of the invention provide a medium which provides high media S/N and good corrosion resistance. According to one embodiment, in a perpendicular magnetic recording medium at least comprising a soft-magnetic underlayer, a seed layer, an intermediate layer, a magnetic recording layer and an overcoat layer which are stacked over a substrate in order, the magnetic recording layer has a granular structure which consists of many columnar grains of CoCrPt alloy and a grain boundary layer containing an oxide, the seed layer is made of TaNi alloy or TaTi alloy and the intermediate layer is made of Ru or Ru alloy which contains about 80 at. % Ru or more.
摘要翻译：本发明的实施方案提供了提供高介质S / N和良好耐腐蚀性的介质。根据一个实施例，在依次层叠在基板上的至少包括软磁性底层，种子层，中间层，磁记录层和覆盖层的垂直磁记录介质中，磁记录层具有由CoCrPt合金的许多柱状晶粒和含有氧化物的晶界层组成的粒状结构，种子层由TaNi合金或TaTi合金制成，中间层由含有约80at的Ru或Ru合金制成。％Ru或更多。

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