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51. 发明授权

US07846766B2 Diamond film formation method and film formation jig thereof 有权
标题翻译：金刚石成膜方法及其成膜夹具
公开(公告)号：US07846766B2
公开(公告)日：2010-12-07
申请号：US11674354
申请日：2007-02-13
申请人： Hiroaki Yoshida , Isamu Yanase , Tomio Ono , Naoshi Sakuma , Mariko Suzuki , Tadashi Sakai
发明人： Hiroaki Yoshida , Isamu Yanase , Tomio Ono , Naoshi Sakuma , Mariko Suzuki , Tadashi Sakai
IPC分类号： H01L21/00
CPC分类号： C30B29/04 , C30B25/105 , H01L21/02381 , H01L21/02425 , H01L21/02444 , H01L21/02527 , H01L21/0262 , H01L21/02645
摘要： A diamond film formation method includes forming, in a composite of a metal material and a semiconductor material, diamond nuclei on a surface of the metal material at a temperature below 650° C. in a first mixed gas containing at least carbon and hydrogen, and growing the diamond nuclei formed in the composite at a temperature below 750° C. in a second mixed gas containing at least carbon and hydrogen to form a diamond film.
摘要翻译：金刚石膜的形成方法包括在金属材料和半导体材料的复合物中，在低于650℃的温度下，在至少含有碳和氢的第一混合气体中，在金属材料的表面上形成金刚石核，以及在低于750℃的温度下在包含至少碳和氢的第二混合气体中生长在复合材料中形成的金刚石核，以形成金刚石膜。

52. 发明授权

US07605527B2 Discharge lamp and discharge electrode having an electron-emitting layer including a plurality of protrusions separated by grooves 有权
标题翻译：具有电子发射层的放电灯和放电电极包括由凹槽分开的多个突起
公开(公告)号：US07605527B2
公开(公告)日：2009-10-20
申请号：US11140222
申请日：2005-05-31
申请人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Hiroaki Yoshida , Mariko Suzuki
发明人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Hiroaki Yoshida , Mariko Suzuki
IPC分类号： H01J1/00 , H01J61/04
CPC分类号： H01J1/308 , H01J61/0677 , H01J61/0737
摘要： A discharge lamp encompassing a sealed-off tube filled with a discharge gas and a discharge electrode provided in the sealed-off tube. The discharge electrode embraces a supporting base and an electron-emitting layer formed of a wide bandgap semiconductor and provided on the supporting base, implemented by a plurality of protrusions, at least part of surfaces of the protrusions are unseen from a perpendicular direction to thereof above a top surface of the electron-emitting layer, dangling bonds of the wide bandgap semiconductor at the surfaces are terminated with hydrogen atoms.
摘要翻译：一种放电灯，包括填充有放电气体的封闭管和设置在密封管中的放电电极。放电电极包括支撑基底和由宽带隙半导体形成的电子发射层，并且设置在由多个突起构成的支撑基底上，突起的至少一部分表面从其上方的垂直方向看不见电子发射层的顶表面，表面处的宽带隙半导体的悬挂键被氢原子终止。

53. 发明申请

US20080203885A1 THERMAL-ELECTRON SOURCE 审中-公开
标题翻译：热电源
公开(公告)号：US20080203885A1
公开(公告)日：2008-08-28
申请号：US11851095
申请日：2007-09-06
申请人： Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Mariko Suzuki
发明人： Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Mariko Suzuki
IPC分类号： H01J1/16
CPC分类号： H01J1/16
摘要： A thermal-electron source includes a substrate; and a thermionic cathode having conductivity, and being provided on the substrate, and including a plurality of microscopic pores on a surface of the thermionic cathode.
摘要翻译：热电子源包括基板; 和具有导电性的热离子阴极，并且设置在基板上，并且在热离子阴极的表面上包括多个微孔。

54. 发明授权

US07348718B2 Discharge electrode implemented by a wide bandgap semiconductor and a discharge lamp using the same 失效
标题翻译：由宽带隙半导体实现的放电电极和使用其的放电灯
公开(公告)号：US07348718B2
公开(公告)日：2008-03-25
申请号：US10899153
申请日：2004-07-27
申请人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Mariko Suzuki , Hiroaki Yoshida
发明人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Mariko Suzuki , Hiroaki Yoshida
IPC分类号： H01J1/13 , H01J1/14
CPC分类号： H01J9/042 , H01J1/15 , H01J61/0677 , H01J61/0737
摘要： A discharge electrode emitting electrons into a discharge gas, encompasses an emitter and current supply terminals configured to supply electric current to the emitter. The emitter embraces a wide bandgap semiconductor having at 300 K a bandgap of 2.2 eV or wider. Acceptor impurity atoms and donor impurity atoms being doped in the wide bandgap semiconductor, the activation energy of the donor impurity atoms being larger than the activation energy of the acceptor impurity atoms.
摘要翻译：将电子发射到放电气体中的放电电极包括被配置为向发射极提供电流的发射极和电流源端子。发射极包含宽度为300K的宽带隙半导体，其带隙为2.2eV或更宽。受主杂质原子和施主杂质原子被掺杂在宽带隙半导体中，施主杂质原子的活化能大于受主杂质原子的活化能。

55. 发明申请

US20070114539A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCING METHOD FOR THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20070114539A1
公开(公告)日：2007-05-24
申请号：US11531577
申请日：2006-09-13
申请人： Mariko Suzuki , Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Hiroaki Yoshida
发明人： Mariko Suzuki , Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Hiroaki Yoshida
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/24 , H01L33/44 , H01L33/58
摘要： A semiconductor light-emitting device includes: a first semiconductor layer; a light-emitting layer being disposed on the first semiconductor layer; a second semiconductor layer being disposed on the light-emitting layer, and metal electrodes connected to the first semiconductor layer and the second semiconductor layer. The light-emitting layer is lower in refractive index than the first semiconductor layer. The second semiconductor layer is lower in refractive index than the light-emitting layer. The metal electrodes supply a current to the light-emitting layer.
摘要翻译：一种半导体发光器件包括：第一半导体层; 发光层设置在所述第一半导体层上; 设置在发光层上的第二半导体层和连接到第一半导体层和第二半导体层的金属电极。发光层的折射率低于第一半导体层。第二半导体层的折射率低于发光层。金属电极向发光层提供电流。

56. 发明申请

US20060220515A1 Discharge light emitting device, light emitting apparatus, and method of manufacturing light emitting device 审中-公开
标题翻译：放电发光器件，发光器件和制造发光器件的方法
公开(公告)号：US20060220515A1
公开(公告)日：2006-10-05
申请号：US11223029
申请日：2005-09-12
申请人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Hiroaki Yoshida , Mariko Suzuki
发明人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Hiroaki Yoshida , Mariko Suzuki
IPC分类号： H01J1/00 , H01J19/06
CPC分类号： H01J61/82 , H01J9/247 , H01J61/0735 , H01J61/302
摘要： A discharge light emitting device includes a container formed from insulating diamond and accommodating a discharge space therein, a material for discharge sealed in the discharge vessel, and an electrode pair formed from a conductive diamond and provided to apply voltage to the material for discharge.
摘要翻译：放电发光装置包括由绝缘金刚石形成的容纳其中的放电空间的容器，用于放电容器中密封的放电材料，以及由导电金刚石形成的电极对，用于向放电材料施加电压。

57. 发明申请

US20050017644A1 Discharge lamp 审中-公开
标题翻译：放电灯
公开(公告)号：US20050017644A1
公开(公告)日：2005-01-27
申请号：US10897113
申请日：2004-07-23
申请人： Tomio Ono , Naoshi Sakuma , Tadashi Sakai , Mariko Suzuki , Hiroaki Yoshida
发明人： Tomio Ono , Naoshi Sakuma , Tadashi Sakai , Mariko Suzuki , Hiroaki Yoshida
IPC分类号： H01J61/067 , H01J17/04 , H01J17/20 , H01J61/04 , H01J61/12 , H01J61/54 , H01J61/72 , H01J65/00
CPC分类号： H01J65/00 , H01J61/04 , H01J61/12 , H01J61/545
摘要： A discharge lamp, in which diamond high in secondary electron emission efficiency and low in sputtering ratio is used as a cold cathode, includes an outer envelope filled with a discharge gas, a fluorescent film provided on an inner surface of the outer envelope, and a pair of electrodes which cause discharge to occur within the outer envelope. A diamond member is provided on a surface of each electrode, and oxygen is contained in the discharge gas at a ratio not less than 0.002% and not more than 12.5%.
摘要翻译：使用高二次电子发射效率高且溅射比低的金刚石作为冷阴极的放电灯包括填充有放电气体的外壳，设置在外壳的内表面上的荧光膜，以及导致放电发生在外壳内的一对电极。在每个电极的表面上设置金刚石构件，并且放电气体中以不小于0.002％且不大于12.5％的比率含有氧。

58. 发明授权

US06781294B2 Cold cathode and cold cathode discharge device 失效
标题翻译：冷阴极和冷阴极放电装置
公开(公告)号：US06781294B2
公开(公告)日：2004-08-24
申请号：US10098571
申请日：2002-03-18
申请人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Zhang Li
发明人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Zhang Li
IPC分类号： H01J105
CPC分类号： H01J61/0677
摘要： A cold cathode discharge device with high efficiency of light emission and long life is prepared by a cold cathode having both high secondary electron emission and anti-spattering property. Using carbon system cold cathodes constituted of a mixed phase of diamond and graphite, a cold cathode discharge device with high efficiency of light emission and long life is realized. It is desirable that an element having a wavelength of light emission equal to or shorter than 200 nanometers should be mixed in the discharge gas.
摘要翻译：具有高发光效率和长寿命的冷阴极放电器件通过具有高二次电子发射和抗溅射性能的冷阴极制备。使用由金刚石和石墨的混合相构成的碳系冷阴极，冷阴极实现了高效率的发光和长寿命的放电装置。期望在放电气体中混合具有等于或小于200纳米的发光波长的元件。

59. 发明授权

US06456014B1 Field emission device 失效
标题翻译：场发射装置
公开(公告)号：US06456014B1
公开(公告)日：2002-09-24
申请号：US09606013
申请日：2000-06-29
申请人： Tomio Ono , Tadashi Sakai , Li Zhang
发明人： Tomio Ono , Tadashi Sakai , Li Zhang
IPC分类号： G09G310
CPC分类号： H01J1/304 , H01J2201/319
摘要： A field emission device comprises an anode plate, an emitter plate having a plurality of filed emission portions that face the anode plate, and a gate plate having openings corresponding to the filed emission portions. The field emission device also comprises a current limiting element composed of a J FET or a MOSFET that is integrally formed with the gate plate and that is inserted between the gate plate and a gate voltage supply terminal. The loss caused by the emitter current is small as the current limiting element is inserted into a gate input portion. If the field emission device including a number of blocks each having the above structure is constituted, a power switching device having sufficient redundancy against a short circuit between the gate and the emitter can be implemented.
摘要翻译：场发射装置包括阳极板，具有面向阳极板的多个场发射部分的发射极板以及具有对应于场发射部分的开口的栅极板。励磁发射装置还包括由与栅极板一体形成并且插入在栅极板和栅极电压提供端子之间的J FET或MOSFET组成的限流元件。由于限流元件被插入到栅极输入部分中，由发射极电流引起的损耗很小。如果构成包括多个具有上述结构的块的场发射器件，则可以实现具有足够的冗余以抵抗栅极和发射极之间的短路的功率开关器件。

60. 发明授权

US06297586B1 Cold-cathode power switching device of field-emission type 失效
标题翻译：场致发射型冷阴极功率开关器件
公开(公告)号：US06297586B1
公开(公告)日：2001-10-02
申请号：US09263217
申请日：1999-03-05
申请人： Kazuya Nakayama , Tadashi Sakai , Naoshi Sakuma , Tomio Ono
发明人： Kazuya Nakayama , Tadashi Sakai , Naoshi Sakuma , Tomio Ono
IPC分类号： H01J116
CPC分类号： H01J21/105 , H01J1/3044
摘要： Disclosed herein are a cold-cathode power switching device and a method of manufacturing the same. The device has a high voltage resistance and can be manufactured with high yield though its element area is large to control large currents. In the method, arrays of miniature emitters are prepared, and the emitter arrays are adhered to a conductive substrate having trenches. The conductive substrate is cut along the trenches, forming a plurality of substrates. The gaps between these substrates are filled with insulating resin. As a result, a multi-module power switching device for controlling large currents is manufactured with high yield. Further, cold-cathode modules, each having a gate pad, are arranged on a cathode electrode made of a conducive substrate, insulating strips are formed on the cathode electrode, gate lines are formed on the insulating strips, and the gate pads are connected to the gate lines. The electrons emitted from the modules can be controlled at a time. Each module may have a cathode pad connected to a cathode line. Depressions are made in those part of an anode electrode which oppose the gate pads and cathode pads, providing a sufficient insulation distance between each emitter and the anode electrode. Hence, a cold-cathode power switching device of field emission type can be provided which has a high voltage resistance.
摘要翻译：本文公开了一种冷阴极电力开关装置及其制造方法。该器件具有高耐压性，并且可以以高产率制造，尽管其元件面积大以控制大电流。在该方法中，制备微型发射体的阵列，并且发射极阵列粘附到具有沟槽的导电衬底上。沿着沟槽切割导电衬底，形成多个衬底。这些基板之间的间隙用绝缘树脂填充。结果，以高产率制造用于控制大电流的多模块功率开关装置。此外，在由导电基板制成的阴极上配置有具有栅极焊盘的冷阴极模块，在阴极上形成绝缘条，在绝缘条上形成栅极线，栅极连接到门线。可以一次控制从模块发射的电子。每个模块可以具有连接到阴极线的阴极焊盘。在与栅极焊盘和阴极焊盘相对的阳极电极的那些部分进行抑制，从而在每个发射极和阳极电极之间提供足够的绝缘距离。因此，可以提供具有高耐电压性的场致发射型冷阴极功率开关器件。

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