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    • 54. 发明申请
    • Novel CPP device with an enhanced dR/R ratio
    • 具有增强的dR / R比的新型CPP装置
    • US20080278864A1
    • 2008-11-13
    • US11803057
    • 2007-05-11
    • Kunliang ZhangMin LiMoris DovekYue Liu
    • Kunliang ZhangMin LiMoris DovekYue Liu
    • G11B5/127
    • G11B5/3909B82Y10/00B82Y25/00G11B5/3906G11B2005/3996Y10T29/49039Y10T29/49043Y10T29/49044
    • A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer ≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.
    • 公开了具有由至少一个金属(M)层和至少一个半导体或半金属(S)层组成的复合间隔层的CPP-GMR自旋阀。 复合间隔物可以具有M / S,S / M,M / S / M,S / M / S,M / S / M / S / M或多层(M / S / M) 配置,其中n是整数> = 1。 被钉扎层优选具有AP2 /偶联/ AP1构型,其中AP2部分是由CoZi Fe(100-Z)/ Fe Y 其中y为0至60原子%,以及(C 1 -C 6) z为75〜100原子%。 在一个实施方案中,M是厚度为0.5至50埃的Cu,S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。 自旋阀的dR / R比提高到10%以上,同时保持可接受的EM和RA性能。
    • 60. 发明申请
    • Composite shield structure of PMR writer for high track density
    • 用于高轨道密度的PMR写入器的复合屏蔽结构
    • US20100328816A1
    • 2010-12-30
    • US12807173
    • 2010-08-30
    • Lijie GuanMoris DovekJoe SmythYoshitaka Sasaki
    • Lijie GuanMoris DovekJoe SmythYoshitaka Sasaki
    • G11B5/17
    • G11B5/1278G11B5/11G11B5/3116G11B5/3146G11B5/315
    • Improved writability and a substantial reduction in adjacent track erasure are achieved by incorporating a composite shield structure in a PMR writer. There is a trailing shield formed a certain distance above the top surface of a write pole, a leading shield formed a certain distance below the bottom surface of the write pole, and a partial side shield having a side shield section formed on each side of the write pole. The partial side shield thickness is less than that of the write pole. Each partial side shield section has a side that is parallel to the nearest write pole side and a top surface that is offset from the write pole top surface by 0 to 0.15 microns. A plurality of magnetic connections between two or more shield elements is employed to ensure correct magnetic potential. The large write pole has a flare angle of 45 to 75 degrees.
    • 通过在PMR写入器中并入复合屏蔽结构来实现改进的可编写性和相邻轨迹擦除的实质性减少。 在写入磁极的上表面之上形成一定距离的尾部屏蔽件,在写入磁极的底表面下方形成一定距离的前屏蔽件,以及形成在屏蔽件的每一侧上的侧面屏蔽部分 写柱 部分侧屏蔽厚度小于写入极的厚度。 每个局部侧屏蔽部分具有平行于最近的写入极侧的一侧和从写入磁极顶部表面偏移0至0.15微米的顶部表面。 采用两个或更多个屏蔽元件之间的多个磁连接来确保正确的磁势。 大写字杆的喇叭角为45度至75度。