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    • 53. 发明授权
    • Processor utilizing a low voltage data circuit and a high voltage
controller
    • 处理器利用低压数据电路和高电压控制器
    • US5661413A
    • 1997-08-26
    • US461403
    • 1995-06-05
    • Yasuhiro TomitaToshiyuki ShonoHirokazu Yonezawa
    • Yasuhiro TomitaToshiyuki ShonoHirokazu Yonezawa
    • H01L21/822H01L27/04H03K19/00H03K19/0185
    • H03K19/0008
    • A data operating circuit in which a logic combinatorial circuit and a transfer gate are built, and a controller for controlling the data operating circuit are disposed. The controller includes a drive unit for applying a drive signal to a gate of an N-channel transistor included in the transfer gate, and a control unit for controlling the operation of the drive unit. The data operating circuit is supplied with a first voltage via a first power supply line, and the controller is supplied with a second voltage that has a higher voltage value than the first voltage. A signal line for transferring an output signal of the data operating circuit to the controller is provided with a level converter for increasing the level of the output signal of the data operating circuit to a level required for the operation of the control unit. As a result, a timing skew of the transfer gate can be retained small while minimizing power consumption of the data operating circuit.
    • 设置有逻辑组合电路和传输门的数据操作电路和用于控制数据操作电路的控制器。 该控制器包括用于将驱动信号施加到包括在传送门中的N沟道晶体管的栅极的驱动单元和用于控制驱动单元的操作的控制单元。 经由第一电源线向数据操作电路提供第一电压,并且向控制器提供具有比第一电压更高的电压值的第二电压。 用于将数据操作电路的输出信号传送到控制器的信号线设置有用于将数据操作电路的输出信号的电平增加到控制单元的操作所需的电平的电平转换器。 结果,传输门的定时偏移可以保持较小,同时最小化数据操作电路的功耗。
    • 55. 发明授权
    • Semiconductor integrated circuit having light emitting MOS devices
    • 具有发光MOS器件的半导体集成电路
    • US5105235A
    • 1992-04-14
    • US630030
    • 1990-12-19
    • Yasuhiro Tomita
    • Yasuhiro Tomita
    • H01L27/15
    • H01L27/15
    • The light emitting device has a series circuit comprised of a MOS transistor and a P.sup.+ N.sup.+ junction. When a voltage greater than the breakdown voltage of the P.sup.+ N.sup.+ junction is applied to this series circuit, as well as putting the MOS transistor into a conductive state, the P.sup.+ N.sup.+ junction breaks down allowing a break-down current to flow, and weak light is generated from the P.sup.+ N.sup.+ junction. Since this light emitting device can be produced in nearly the same size as an MOS transistor, using a conventional CMOS technique, it can be integrated into a chip with a high integration level, and the integration of the light emitting device causes almost no drop in the integration level. When this light emitting device is integrated in a semiconductor integrated circuit, the state of the circuit can be easily monitored by observing the light pattern of the device.
    • 发光器件具有由MOS晶体管和P + N +结构成的串联电路。 当大于P + N +结的击穿电压的电压被施加到该串联电路时,以及将MOS晶体管置于导通状态,则P + N +结断裂,允许分解电流流动,以及 从P + N +结产生弱光。 由于该发光器件可以以与MOS晶体管大致相同的尺寸生产,所以使用传统的CMOS技术,可将其集成到具有高集成度的芯片中,并且发光器件的集成几乎不会下降 整合水平。 当该发光器件集成在半导体集成电路中时,可以通过观察器件的光图来容易地监视电路的状态。