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    • 54. 发明授权
    • Electric double-layer capacitor and method for manufacturing the same
    • 双电层电容器及其制造方法
    • US07706129B2
    • 2010-04-27
    • US12300619
    • 2007-05-25
    • Eri HiroseYasuyuki ItoSatomi OnishiMitsuru IwaiTakumi YamaguchiIchiro AokiKouji MoriyamaYoshiki Hashimoto
    • Eri HiroseYasuyuki ItoSatomi OnishiMitsuru IwaiTakumi YamaguchiIchiro AokiKouji MoriyamaYoshiki Hashimoto
    • H01G9/00
    • H01G11/28H01G11/74H01G11/84H01G11/86Y02E60/13Y10T29/417
    • In an electric double-layer capacitor, resistance of a polarizable electrode layer is reduced and gas generation inside a case is suppressed in an attempt to improve reliability. On that account, an electric double-layer capacitor is provided, which is obtained by housing in a case, together with a driving electrolyte, a capacitor element wound with a separator interposed between electrodes being paired anode and cathode electrodes in each of which polarizable electrode layers are formed on and lead wires are fixed to both sides of a current collector made of metallic foil, such that the polarizable electrode layers are opposed to each other. Further, an electric double-layer capacitor is provided in which the lead wire is fixed to a polarizable-electrode-layer-removed section on the electrode where the polarizable electrode layer has been removed, and an area of the polarizable-electrode-layer-removed section is not smaller than 1 and not larger than 2.0 when a project area of a portion where the lead wire is connected with the current collector is set to 1.
    • 在双电层电容器中,为了提高可靠性,可以降低极化电极层的电阻,并抑制气体产生。 因此,提供了一种双电层电容器,其通过壳体与驱动电解质一起容纳电容器元件而获得,所述电容器元件被插入电极之间的间隔件,所述电极元件设置在成对的阳极和阴极电极之间,其中每个极化电极 在金属箔的集电体的两侧固定引线,使可极化电极层相对。 此外,提供一种双电层电容器,其中引线固定到已去除可极化电极层的电极上的可极化电极层去除部分上,并且可极化电极层 - 当引线与集电器连接的部分的投影区域设定为1时,取出部分不小于1且不大于2.0。
    • 57. 发明授权
    • Oxygen diffusion blocking semiconductor capacitor
    • 氧扩散阻塞半导体电容器
    • US06407422B1
    • 2002-06-18
    • US09556571
    • 2000-04-24
    • Katsuaki AsanoYasuyuki ItoShun MitaraiAkihiko Ochiai
    • Katsuaki AsanoYasuyuki ItoShun MitaraiAkihiko Ochiai
    • H01L27108
    • H01L28/75H01L21/28568H01L28/55
    • Provided is a semiconductor memory device in which defective contact, deterioration in transistor characteristics and other problems are solved with a thermally stable, conductive diffusion barrier layer against oxygen, and against constituent elements in a plug material and a lower electrode, formed at the interface between a plug and the lower electrode made of a noble metal. The semiconductor memory device comprises a dielectric capacitor of a stacked structure including a first electrode (a lower electrode), a dielectric film and a second electrode (an upper electrode) and a conductive plug connected to the lower electrode, wherein the lower electrode connected to the conductive plug includes a metal suboxide layer with conductiveness and a diffusion barrier layer blocking diffusion of oxygen, and the metal suboxide layer and the diffusion barrier layer are stacked in the order from the conductive plug side of the lower electrode.
    • 提供了一种半导体存储器件,其中通过针对氧的热稳定的导电扩散阻挡层以及针对形成在插塞材料和下电极之间的界面处的构成元件来解决不良接触,晶体管特性劣化和其他问题 插头和由贵金属制成的下电极。 半导体存储器件包括具有第一电极(下电极),电介质膜和第二电极(上电极)和连接到下电极的导电插塞的堆叠结构的介质电容器,其中下电极连接到 导电插塞包括具有导电性的金属低氧化物层和阻挡氧的扩散的扩散阻挡层,并且金属低氧化物层和扩散阻挡层以下电极的导电插塞侧的顺序层叠。