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51. 发明申请

US20070052042A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070052042A1
公开(公告)日：2007-03-08
申请号：US10551843
申请日：2004-03-31
申请人： Tadahiro Ohmi , Akinobu Teramoto , Hidetoshi Wakamatsu , Yasuo Kobayashi
发明人： Tadahiro Ohmi , Akinobu Teramoto , Hidetoshi Wakamatsu , Yasuo Kobayashi
IPC分类号： H01L29/94 , H01L21/8238
CPC分类号： H01L21/318 , H01L21/28167 , H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/518
摘要： In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiO2 from being formed.
摘要翻译：为了通过将高K绝缘膜的相对介电常数保持在高状态来提供具有良好质量的半导体器件，或者提供一种半导体器件的制造方法，其中高K绝缘膜的相对介电常数可以保持在高状态，公开了在硅衬底和栅极电极层之间包括硅衬底，栅极电极层和栅极绝缘膜的半导体器件。栅极绝缘膜是通过对金属和硅的混合物进行氮化处理而形成的高相对介电常数（高k）膜。 High-K膜本身成为氮化物，以防止形成SiO 2。

52. 发明授权

US07146744B2 Method and apparatus for surface treatment 有权
标题翻译：表面处理方法和装置
公开(公告)号：US07146744B2
公开(公告)日：2006-12-12
申请号：US10832439
申请日：2004-04-27
申请人： Yasuo Kobayashi
发明人： Yasuo Kobayashi
IPC分类号： F26B19/00
CPC分类号： H01L21/02063 , H01J37/32082 , H01J2237/2001 , H01L21/02046 , H01L21/31116
摘要： The present invention provides method and apparatus for surface treatment which, when employed in process steps of manufacturing semiconductor devices, can result in the final products having enhanced reliability. According to the surface processing method, an obeject to be processed W is introduced in a processing vessel 10, which is then supplied with ClF3 gas serving as cleaning gas from a supply unit 26. The ClF3 gas is bound to the surface of the object to be processed W, and although the supply of the gas to the processing vessel is interrupted, the ClF3 gas bound to the surface of the object to be processed W serves to clean the surface of the object to be processed. Next, reducing gas is introduced into the processing vessel W to remove chlorine from the object to be processed W, the chlorine being derived from the ClF3 gas. After that, the introduction of the reducing gas is interrupted, and the cleaned object to be processed W is exported from the processing vessel 10. In addition to that, a surface processing apparatus 1 and other processing devices are arranged in a cluster device so that an object to be processed therein is transported among them from one to another under a vacuum environment.
摘要翻译：本发明提供了用于表面处理的方法和装置，当在制造半导体器件的工艺步骤中使用时，可以使最终产品具有增强的可靠性。根据表面处理方法，待处理对象W被引入处理容器10中，然后从供应单元26向其供应用作清洁气体的ClF 3 3气体。 ClF 3气体被结合到待处理物体W的表面，并且尽管向处理容器供应的气体被中断，但是ClF 3 3气体被束缚待被处理物体的表面W用于清洁待处理物体的表面。接下来，将还原性气体引入处理容器W中以从被处理物W除去氯，氯源自ClF 3气体。之后，还原气体的引入被中断，被处理物体W从处理容器10输出。除此之外，表面处理装置1和其他处理装置布置在集束装置中，使得其中的处理对象在真空环境之间从一个传送到另一个。

53. 发明申请

US20060251828A1 Plasma film-forming method and plasma film-forming apparatus 审中-公开
标题翻译：等离子体成膜法和等离子体成膜装置
公开(公告)号：US20060251828A1
公开(公告)日：2006-11-09
申请号：US10549859
申请日：2004-03-24
申请人： Yasuo Kobayashi , Kohei Kawamura , Akira Asano , Yasuhiro Terai , Kenichi Nishizawa
发明人： Yasuo Kobayashi , Kohei Kawamura , Akira Asano , Yasuhiro Terai , Kenichi Nishizawa
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/3244 , H01L21/0212 , H01L21/02274 , H01L21/3127
摘要： A plasma-assisted deposition system for carrying out a plasma-assisted deposition method has a processing vessel defining a vacuum chamber and having an open upper end, a dielectric member covering the open upper end of the processing vessel, and a flat antenna member placed on the upper surface of the dielectric member. A coaxial waveguide has one end connected to the upper surface of the flat antenna member and the other end connected to a microwave generator. The flat antenna member is provided with many slots of a length corresponding to half the wavelength of a microwave arranged on concentric circles. For example, a circularly polarized microwave is radiated from the slots into a processing space to produce a source gas plasma. Electron temperature in the plasma in terms of mean square velocity is 3 eV or below and the electron density in the plasma is 5×1011 electrons per cubic centimeter or above. The plasma is used for depositing a fluorine-containing carbon film. Preferably, the process pressure is 19.95 Pa or below. Under such process conditions for depositing a fluorine-containing carbon film by using the plasma, the source gas, such as C5F8 gas, is decomposed properly to form a structure of long CF chains. A interlayer insulation film thus formed has a small relative dielectric constant and permits only a low leakage current.
摘要翻译：用于执行等离子体辅助沉积方法的等离子体辅助沉积系统具有限定真空室并具有敞开的上端的处理容器，覆盖处理容器的敞开的上端的电介质构件和放置在电介质构件的上表面。同轴波导的一端连接到平坦天线构件的上表面，另一端连接到微波发生器。扁平天线构件设置有多个长度对应于布置在同心圆上的微波的一半波长的槽。例如，圆形极化微波从狭缝辐射到处理空间中以产生源气体等离子体。等离子体中的平均电子速度的电子温度为3eV以下，等离子体中的电子密度为每立方厘米以上5×10 11电子。等离子体用于沉积含氟碳膜。优选地，工艺压力为19.95Pa或更低。在通过使用等离子体沉积含氟碳膜的这种工艺条件下，诸如C 5 F 8气体的源气体被适当地分解以形成结构的长CF链。这样形成的层间绝缘膜具有小的相对介电常数，并且仅允许低的漏电流。

54. 发明授权

US06517144B2 Upper body structure of motor vehicle 失效
标题翻译：机动车上身结构
公开(公告)号：US06517144B2
公开(公告)日：2003-02-11
申请号：US09855729
申请日：2001-05-16
申请人： Yasuo Kobayashi
发明人： Yasuo Kobayashi
IPC分类号： B60R2104
CPC分类号： B60R21/04 , B60R2021/0442
摘要： An impact absorbing member is composed of a first impact absorbing portion disposed between a roof side panel and a roof head lining, a second impact absorbing portion disposed between the roof head lining and a region that is in a reinforcement and that is spaced from the roof side panel towards a central portion of the roof, and a third impact absorbing portion connecting the first impact absorbing portion to the second impact absorbing portion. The third impact absorbing portion is thinner than the first impact absorbing portion and the second impact absorbing portion.
摘要翻译：冲击吸收构件由设置在屋顶侧板和屋顶衬里之间的第一冲击吸收部分构成，第二冲击吸收部分设置在屋顶顶部衬里和位于加强件中并与屋顶间隔开的区域侧板朝向屋顶的中心部分，以及将第一冲击吸收部分连接到第二冲击吸收部分的第三冲击吸收部分。第三冲击吸收部分比第一冲击吸收部分和第二冲击吸收部分薄。

55. 发明授权

US6130567A Semiconductor delay circuit having inverter circuits and transfer gates 失效
标题翻译：具有逆变器电路和转移门的半导体延迟电路
公开(公告)号：US6130567A
公开(公告)日：2000-10-10
申请号：US56643
申请日：1998-04-08
申请人： Yasuo Kobayashi
发明人： Yasuo Kobayashi
IPC分类号： G11C11/407 , G06F1/06 , G06F1/10 , G11C11/4076 , H01L21/82 , H01L21/822 , H01L27/04 , H03K5/13 , H03H11/26
CPC分类号： H03K5/133
摘要： A semiconductor delay circuit which can realize a fine delay time regulation pitch and can set a number of regulation steps is provided. A plurality of inverter tree circuit each having a plurality of propagation paths having delay times different with an equal pitch are connected in series and outputs of the propagation paths are selectively transmitted externally by a switch circuit.
摘要翻译：提供一种能够实现精细的延迟时间调节间距并且可以设置多个调节步骤的半导体延迟电路。多个具有多个具有相等间距不同延迟时间的传播路径的反相器树电路串联连接，传输路径的输出由开关电路选择性地传输到外部。

56. 发明授权

US6081434A Insulation-type DC-DC power conversion unit and electric system for electric vehicle 失效
标题翻译：绝缘型直流 - 直流电力转换单元和电动汽车电气系统
公开(公告)号：US6081434A
公开(公告)日：2000-06-27
申请号：US273437
申请日：1999-03-22
申请人： Shigenori Kinoshita , Kouichi Ueki , Yasuo Kobayashi
发明人： Shigenori Kinoshita , Kouichi Ueki , Yasuo Kobayashi
IPC分类号： B60L11/12 , B60L11/18 , H02M3/335 , H02M3/22
CPC分类号： H02M3/33584 , B60L11/123 , B60L11/14 , B60L11/1811 , Y02T10/6217 , Y02T10/7005 , Y02T10/7072 , Y02T10/7077 , Y02T90/127 , Y02T90/14
摘要： A switch circuit comprising a semiconductor switch and an inverse-parallel diode is connected between a main electricity storage unit 4 and a primary winding 142P of an insulating transformer 142 and a switch circuit including a semiconductor switch and a diode is connected in inverse-parallel between a secondary winding 142S of the insulating transformer 142 and an auxiliary electricity storage unit 10. The switch circuits are controlled on/off, whereby power is supplied from the main electricity storage unit 4 to the auxiliary electricity storage unit 10 or from the auxiliary electricity storage unit 10 to the main electricity storage unit 4 for charging the electricity storage unit 10 or 4.
摘要翻译：包括半导体开关和逆并联二极管的开关电路连接在绝缘变压器142的主蓄电单元4和初级绕组142P之间，并且包括半导体开关和二极管的开关电路以绝缘变压器142的次级绕组142S和辅助蓄电单元10.开关电路被控制开/关，从而从主蓄电单元4向辅助蓄电单元10供电或从辅助蓄电单元单元10连接到用于对蓄电单元10或4进行充电的主蓄电单元4。

57. 发明授权

US4991074A Lighting lamp 失效
标题翻译：照明灯
公开(公告)号：US4991074A
公开(公告)日：1991-02-05
申请号：US404514
申请日：1989-09-08
申请人： Yasuo Kobayashi , Yasuo Hirasawa , Churyo Kodama , Katsumi Miyazaki , Takao Higashi , Masami Yanagisawa , Akinori Sei
发明人： Yasuo Kobayashi , Yasuo Hirasawa , Churyo Kodama , Katsumi Miyazaki , Takao Higashi , Masami Yanagisawa , Akinori Sei
IPC分类号： G09F3/02 , H01J61/02 , H01J61/35
CPC分类号： H01J61/35
摘要： A lighting lamp having a display sheet laminated on the surface of a bulb thereof, said display sheet comprising a support having laminated thereon a light-susceptible layer including an active layer containing at least one of a dye and a pigment capable of coloring, fading, or discoloring by the action of an active light and an adhesive layer formed on the surface of the light-susceptible layer such that the portion corresponding to at least the display portion thereof is exposed, and being laminated on the surface of the bulb by the adhesive layer.

58. 植物专利

USPP27373P2 Tecoma plant named ‘Sunhorteki’ 有权
标题翻译： Tecoma植物名为“Sunhorteki”
公开(公告)号：USPP27373P2
公开(公告)日：2016-11-15
申请号：US14544310
申请日：2014-12-20
申请人： Kenichi Arisumi , Yasuo Kobayashi
发明人： Kenichi Arisumi , Yasuo Kobayashi
IPC分类号： A01H5/02
CPC分类号： A01H5/02
摘要： A new and distinct cultivar of Tecoma plant named ‘Sunhorteki’, characterized by its semi-upright plant habit; vigorous growth habit; early and freely flowering habit; flowering under high temperature conditions; bright yellow-colored flowers; and low temperature tolerance.
摘要翻译：一种名为“Sunhorteki”的Tecoma植物的新的和独特的品种，其半直立的植物习性，生长习惯旺盛早期自由开花的习惯; 在高温条件下开花; 明亮的黄色花朵; 和低温耐受性。

59. 发明授权

US08503214B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08503214B2
公开(公告)日：2013-08-06
申请号：US13034901
申请日：2011-02-25
申请人： Yasuo Kobayashi
发明人： Yasuo Kobayashi
IPC分类号： G11C17/00
CPC分类号： G11C7/18 , G11C16/24 , G11C16/26
摘要： A semiconductor memory device provided with a new bit line hierarchization method that enables further reduction of power consumption is provided. The semiconductor memory device includes multiple memory blocks provided in a matrix configuration and multiple main bit lines provided in correspondence with the memory blocks. Each of the memory blocks includes: multiple memory cells provided in a matrix configuration; multiple sub bit lines provided on a column-by-column basis; multiple word lines provided with respect to each of columns and rows and common to multiple memory blocks; and a switch circuit that couples a corresponding main bit line to any of the sub bit lines. In the operation of reading a target cell as the target of read, a main bit line corresponding to the target cell is selected, a sub bit line corresponding to the column of the target cell is selected through the switch circuit; and a word line corresponding to the column and the row of the target cell is selected from among the word lines.
摘要翻译：提供了具有能够进一步降低功耗的新的位线分层方法的半导体存储器件。半导体存储器件包括以矩阵配置提供的多个存储器块和与存储块对应地提供的多个主位线。每个存储块包括：以矩阵配置提供的多个存储单元; 以逐列为单位提供多个子位线; 相对于列和行中的每一列提供多个字线并且与多个存储器块共同; 以及将相应的主位线耦合到任何子位线的开关电路。在读取目标单元作为读取对象的操作中，选择与目标单元对应的主位线，通过开关电路选择与目标单元列对应的子位线; 并且从字线中选择与目标单元格的列和行对应的字线。

60. 发明申请

US20100264115A1 PLACING BED STRUCTURE, TREATING APPARATUS USING THE STRUCTURE, AND METHOD FOR USING THE APPARATUS 有权
标题翻译：放置床结构，使用结构处理设备，以及使用设备的方法
公开(公告)号：US20100264115A1
公开(公告)日：2010-10-21
申请号：US12526460
申请日：2008-02-04
申请人： Kohei Kawamura , Yasuo Kobayashi , Toshihisa Nozawa , Kiyotaka Ishibashi
发明人： Kohei Kawamura , Yasuo Kobayashi , Toshihisa Nozawa , Kiyotaka Ishibashi
IPC分类号： B23Q1/00 , H01L21/3065 , H05H1/24 , C23C16/513
CPC分类号： H01L21/68742 , C23C16/455 , C23C16/458 , C23C16/4585 , C23C16/4586 , C23C16/50 , H01J37/3244 , H01L21/6831 , H01L21/6833 , H01L21/68735 , H01L21/6875
摘要： Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.
摘要翻译：提供一种保持台结构，其保持基板并且设置在真空可抽真空的处理室中，并且允许在其中对基板进行预定的处理。保持台结构包括：放置基板的保持台体; 升降销机构，其使保持台体上的基板降低，或者使保持台体上升基板; 以及形成在保持台体上的台阶部分，使得放置在保持台体上的基板的后表面的周边部分暴露于供给到处理室中的处理气体。

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