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51. 发明授权

US08402636B2 Method of manufacturing ground-burial type solid insulated transformer 有权
标题翻译：地埋式固体绝缘变压器的制造方法
公开(公告)号：US08402636B2
公开(公告)日：2013-03-26
申请号：US13060893
申请日：2009-08-28
申请人： Jong Tae Park , Byung Kwon Song , Kee Ha Hwang , Tae Ho Kim , Ki Hak Yi
发明人： Jong Tae Park , Byung Kwon Song , Kee Ha Hwang , Tae Ho Kim , Ki Hak Yi
IPC分类号： H01F7/06
CPC分类号： H01F41/005 , H01F27/362 , H01F30/10 , H01F41/127 , Y10T29/4902 , Y10T29/49069 , Y10T29/49071 , Y10T29/49078
摘要： A manufacturing method of ground-buried-type solid insulation transformer includes producing a coil form into which an inner window is formed; winding a low voltage coil and a high voltage coil on the coil form to produce a first coil part; winding glass fiber on the first coil part to produce a second coil part and assembling a first mold into the inner window and then pre-heating the second coil part; putting the second coil part into a second mold and injecting epoxy resin and hardener between the second coil part and the second mold, and automatically molding and curing thereof under predetermined speed, vacuum, pressure and temperature to produce a third coil part on outer circumference of which an epoxy layer is formed; separating the first mold from the inner window of the third coil part and then after-treating and curing the third coil part; cooling the after-treated and cured third coil part and sanding and washing the epoxy layer, and applying semi-conductive coating material to the sanded part to produce a fourth coil part; assembling a core to the fourth coil part to produce a fifth coil part and testing the fifth coil part; and connecting the fifth coil part to a conductive mesh and shielding thereof, and then sealing outer side of the fifth coil part and filling silicone or high molecular weight compound between the fifth coil part and a shell to manufacturing the transformer.
摘要翻译：地埋式固体绝缘变压器的制造方法包括制造形成内窗的线圈形式; 在线圈形式上缠绕低压线圈和高压线圈以产生第一线圈部分; 在第一线圈部分上卷绕玻璃纤维，以产生第二线圈部分，并将第一模具组装到内窗中，然后预热第二线圈部分; 将第二线圈部分放入第二模具中并在第二线圈部分和第二模具之间注入环氧树脂和硬化剂，并在预定速度，真空，压力和温度下自动模制和固化，以在第二线圈部分和外部圆周的外圆周上产生第三线圈部分形成环氧树脂层; 将第一模具与第三线圈部分的内窗分离，然后对第三线圈部分进行后处理和固化; 冷却后处理和固化的第三线圈部分并对环氧树脂层进行打磨和洗涤，并将半导电涂层材料施加到砂磨部分以产生第四线圈部分; 将芯组装到第四线圈部分以产生第五线圈部分并测试第五线圈部分; 并将第五线圈部分连接到导电网及其屏蔽上，然后密封第五线圈部分的外侧并在第五线圈部分和壳体之间填充硅树脂或高分子量化合物以制造变压器。

52. 外观设计

USD643392S1 PDP television receiver 有权
公开(公告)号：USD643392S1
公开(公告)日：2011-08-16
申请号：US29383243
申请日：2011-01-14
申请人： Dai Hyung Ryu , Jae Sung Go , Jeong Rok Lee , He Won Kihl , Tae Ho Kim
设计人： Dai Hyung Ryu , Jae Sung Go , Jeong Rok Lee , He Won Kihl , Tae Ho Kim

53. 外观设计

USD636379S1 Speaker 有权
公开(公告)号：USD636379S1
公开(公告)日：2011-04-19
申请号：US29364072
申请日：2010-06-18
申请人： Yeon Jin Kim , Dai Hyung Ryu , Sa Yoon Hong , Tae Ho Kim , Kyong Tae Han , Hee Su Yang , He Won Kihl , Kwang Ho Choi , Youn Soo Kim
设计人： Yeon Jin Kim , Dai Hyung Ryu , Sa Yoon Hong , Tae Ho Kim , Kyong Tae Han , Hee Su Yang , He Won Kihl , Kwang Ho Choi , Youn Soo Kim

54. 发明申请

US20100190310A1 Gap-filling composition with excellent shelf life by end-capping 有权
标题翻译：间隙填充组合物，通过封端具有优良的保存期限
公开(公告)号：US20100190310A1
公开(公告)日：2010-07-29
申请号：US12659908
申请日：2010-03-25
申请人： Chang Soo Woo , Hee Jae Kim , Sung Jae Lee , Sang Geun Yun , Tae Ho Kim
发明人： Chang Soo Woo , Hee Jae Kim , Sung Jae Lee , Sang Geun Yun , Tae Ho Kim
IPC分类号： H01L21/02 , C08L83/06
CPC分类号： C08L83/04 , C08G77/045 , C08G77/12 , C08G77/70
摘要： A composition with improved shelf life for filling small gaps in a semiconductor device is provided. The composition comprises an end-capped silicone polymer. The molecular weight of the end-capped silicone polymer is not varied during storage. In addition, the dissolution rate (DR) of the composition in an alkaline developing solution is maintained at a desired level during storage. That is, the composition is highly stable during storage. Therefore, the composition is suitable for use in a node separation process for the fabrication of a semiconductor capacitor.
摘要翻译：提供了一种用于填充半导体器件中的小间隙的具有改善的保质期的组合物。组合物包含封端的硅氧烷聚合物。封端硅氧烷聚合物的分子量在储存期间不变化。此外，组合物在碱性显影液中的溶解速率（DR）在储存期间保持在期望的水平。也就是说，组合物在储存期间高度稳定。因此，该组合物适用于制造半导体电容器的节点分离工艺。

55. 发明授权

US07551692B2 Frequency recovery apparatus and method for use in digital broadcast receiver 失效
标题翻译：用于数字广播接收机的频率恢复装置和方法
公开(公告)号：US07551692B2
公开(公告)日：2009-06-23
申请号：US11226288
申请日：2005-09-15
申请人： Tae Ho Kim
发明人： Tae Ho Kim
IPC分类号： H04L27/00
CPC分类号： H04L27/2688 , H04H40/27 , H04L5/0007 , H04L5/0048 , H04L27/261 , H04L27/2659
摘要： A frequency recovery device and method, the method including a) dividing first data units and corresponding second data units delayed by time intervals, passing only parts of the data units from among the divided data units in the divided intervals, dividing the first and the second data units into four parts each having a 2k-mode interval size, passing each part and the data units contained in a predetermined-sized pull-in range interval positioned at front and rear parts of the data interval, allowing the remaining data to be padded to zero, and generating the padding result; b) generating pilot patterns in the divided data units; c) performing correlation between the padding results of the first and second data units at individual positions of the generated pilot patterns, and generating correlation values; and d) estimating a maximum correlation value from among the correlation values as a frequency offset.
摘要翻译：一种频率恢复装置和方法，所述方法包括：a）分割由时间间隔延迟的第一数据单元和对应的第二数据单元，在划分的间隔中仅从分割数据单元中仅传送数据单元的一部分，将第一和第二数据单元分成四个部分，每个部分具有2k模式间隔大小，使每个部分和数据单元包含在位于数据间隔的前后部分的预定大小的引入范围间隔中，从而允许剩余的数据被填充为零，并产生填充结果; b）在划分的数据单元中生成导频模式; c）在所生成的导频模式的各个位置执行第一和第二数据单元的填充结果之间的相关，并产生相关值; 以及d）从所述相关值中估计作为频率偏移的最大相关值。

56. 外观设计

USD592641S1 Speaker for home theater 有权
公开(公告)号：USD592641S1
公开(公告)日：2009-05-19
申请号：US29273166
申请日：2007-02-28
申请人： Dai Hyung Ryu , Tae Ho Kim
设计人： Dai Hyung Ryu , Tae Ho Kim

57. 外观设计

USD590427S1 Digital camera 有权
公开(公告)号：USD590427S1
公开(公告)日：2009-04-14
申请号：US29244517
申请日：2005-12-09
申请人： Tae Ho Kim
设计人： Tae Ho Kim

58. 外观设计

USD576144S1 Mobile phone 有权
公开(公告)号：USD576144S1
公开(公告)日：2008-09-02
申请号：US29292361
申请日：2007-10-10
申请人： Woo Seung Han , Seog Guen Kim , Tae Ho Kim , Sung Kyun Bai , Yun Su Kim
设计人： Woo Seung Han , Seog Guen Kim , Tae Ho Kim , Sung Kyun Bai , Yun Su Kim

59. 发明申请

US20070161222A1 METHOD OF FORMING PAD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：形成半导体器件的方法
公开(公告)号：US20070161222A1
公开(公告)日：2007-07-12
申请号：US11616734
申请日：2006-12-27
申请人： Tae Ho Kim
发明人： Tae Ho Kim
IPC分类号： H01L21/44
CPC分类号： H01L24/05 , H01L24/03 , H01L2224/05093 , H01L2224/05094 , H01L2924/01006 , H01L2924/01033 , H01L2924/01082
摘要： A method of manufacturing a pad of a semiconductor device. A method may include at least one of the following steps: sequentially depositing a metal layer and an interlayer dielectric layer over a semiconductor substrate; forming a plurality of via holes that expose a metal layer through an interlayer dielectric layer; depositing a second metal layer over an interlayer dielectric layer in order to fill via holes; etching back and/or polishing a second metal layer to form metal plugs in via holes; and/or depositing a top metal layer over metal plugs and an interlayer dielectric layer and changing a pattern in the top metal layer into an arbitrary shape to form a pad.
摘要翻译：一种制造半导体器件的焊盘的方法。方法可以包括以下步骤中的至少一个：在半导体衬底上顺序地沉积金属层和层间电介质层; 形成使金属层通过层间绝缘层露出的多个通孔; 在层间电介质层上沉积第二金属层以便填充通孔; 蚀刻和/或抛光第二金属层以在通孔中形成金属塞; 和/或在金属插塞和层间电介质层上沉积顶部金属层，并且将顶部金属层中的图案改变为任意形状以形成衬垫。

60. 发明授权

US08188576B2 Compound for filling small gaps in a semiconductor device, composition including the compound, and method of fabricating a semiconductor capacitor 有权
标题翻译：用于填充半导体器件中的小间隙的化合物，包含该化合物的组合物以及制造半导体电容器的方法
公开(公告)号：US08188576B2
公开(公告)日：2012-05-29
申请号：US13038608
申请日：2011-03-02
申请人： Sung Jae Lee , Hee Jae Kim , Tae Ho Kim , Sang Geun Yun , Chang Soo Woo
发明人： Sung Jae Lee , Hee Jae Kim , Tae Ho Kim , Sang Geun Yun , Chang Soo Woo
IPC分类号： H01L23/58
CPC分类号： C08G77/04 , Y10T428/31663
摘要： A compound for filling small gaps in a semiconductor device, a composition for filling small gaps in a semiconductor device, and a method of fabricating a semiconductor capacitor, the compound including hydrolysates prepared by hydrolysis, in the presence of an acid catalyst, of compounds represented by Formulae 1, 2, and 3: [RO]3Si—[CH2]nR′ (1) wherein, in Formula 1, n is an integer from 0 to about 10, and R and R′ are each independently a hydrogen atom, a C1-C12 alkyl group, or a C6-C20 aryl group; HOOC[CH2]nR2Si—O—SiR′2[CH2]nCOOH (2) wherein, in Formula 2, each n is independently an integer from 0 to about 10, and R and R′ are each independently a C1-C12 alkyl group or a C6-C20 aryl group; and R3Si—O—X (3) wherein, in Formula 3, X is R′ or SiR′3, and R and R′ are each independently a C1-C12 alkyl group or a C6-C20 aryl group, or a polycondensate prepared by polycondensation of the hydrolysates represented by Formulae 1, 2, and 3.
摘要翻译：一种用于填充半导体器件中的小间隙的化合物，用于填充半导体器件中的小间隙的组合物以及制造半导体电容器的方法，所述化合物包括通过水解制备的水解产物，在酸催化剂存在下，表示的化合物通式1，2和3：[RO] 3Si- [CH 2] n R'（1）其中，在式1中，n为0至约10的整数，R和R'各自独立地为氢原子， C 1 -C 12烷基或C 6 -C 20芳基; HOOC [CH2] nR2Si-O-SiR'2 [CH2] nCOOH（2）其中，在式2中，每个n独立地为0至约10的整数，并且R和R'各自独立地为C 1 -C 12烷基或C 6 -C 20芳基; 和R3Si-O-X（3）其中，在式3中，X为R'或SiR'3，R和R'各自独立地为C1-C12烷基或C6-C20芳基，或缩聚物通过由式1,2和3表示的水解产物的缩聚。

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