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51. 发明申请

US20100027328A1 Multilevel Variable Resistance Memory Cell Utilizing Crystalline Programming States 有权
标题翻译：使用结晶编程国家的多电平可变电阻记忆单元
公开(公告)号：US20100027328A1
公开(公告)日：2010-02-04
申请号：US12578638
申请日：2009-10-14
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Charles Dennison , Carl Schell
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Charles Dennison , Carl Schell
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0092
摘要： A method of programming an electrical variable resistance memory device. When applied to variable resistance memory devices that incorporate a phase-change material as the active material, the method utilizes a plurality of crystalline programming states. The crystalline programming states are distinguishable on the basis of resistance, where the resistance values of the different states are stable with time and exhibit little or no drift. As a result, the programming scheme is particularly suited to multilevel memory applications. The crystalline programming states may be achieved by stabilizing crystalline phases that adopt different crystallographic structures or by stabilizing crystalline phases that include mixtures of two or more distinct crystallographic structures that vary in the relative proportions of the different crystallographic structures. The programming scheme incorporates at least two crystalline programming states and further includes at least a third programming state that may be a crystalline, amorphous or mixed crystalline-amorphous state.
摘要翻译：一种编程电可变电阻存储器件的方法。当应用于包含相变材料作为活性材料的可变电阻存储器件时，该方法利用多个晶体编程状态。结晶编程状态可以根据电阻进行区分，其中不同状态的电阻值随时间稳定并且表现出很小的或没有漂移。因此，编程方案特别适用于多层存储器应用。晶体编程状态可以通过稳定采用不同晶体结构的结晶相或通过稳定结晶相来实现，所述结晶相包括两种或更多种不同结晶学结构的混合物，其在不同结晶学结构的相对比例中变化。编程方案包含至少两个晶体编程状态，并且还包括至少第三编程状态，其可以是晶体，无定形或混合晶体 - 非晶状态。

52. 发明申请

US20090227092A1 Temperature and pressure control methods to fill features with programmable resistance and switching devices 有权
标题翻译：温度和压力控制方法来填充具有可编程电阻和开关器件的特性
公开(公告)号：US20090227092A1
公开(公告)日：2009-09-10
申请号：US12075180
申请日：2008-03-10
申请人： Jeff Fournier , Wolodymyr Czubatyj , Tyler Lowrey
发明人： Jeff Fournier , Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1641
摘要： A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer, within the opening, and over selected portions of the bottom electrode, and a top electrode layer deposited over the active material layer. The device uses temperature and pressure control methods to increase surface mobility in an active material layer, thus providing complete coverage or fill of the openings in the insulative layer, selected exposed portions of the bottom electrode layer, and the insulative layer.
摘要翻译：可编程电阻，硫族化物，开关或相变材料器件包括具有多个堆叠层的衬底，其包括导电底电极层，其中形成有开口的绝缘层，沉积在绝缘层上的活性材料层，开口和底部电极的选定部分，以及沉积在活性材料层上的顶部电极层。该装置使用温度和压力控制方法来增加活性材料层中的表面迁移率，从而提供绝缘层中的开口，底部电极层的选定的暴露部分和绝缘层的完全覆盖或填充。

53. 发明申请

US20070063181A1 Memory device and method of making same 有权
标题翻译：存储器件及其制作方法
公开(公告)号：US20070063181A1
公开(公告)日：2007-03-22
申请号：US11602923
申请日：2006-11-21
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Isamu Asano
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Isamu Asano
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/122 , H01L45/143 , H01L45/144 , H01L45/148
摘要： A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a first area of electrical communication with the phase-change material. A second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, and the second area being laterally spacedly disposed from the first area. Additionally, the radial memory device includes a dielectric layer disposed between the first electrode and the second electrode, the dielectric layer having an opening therethrough, the phase-change material being disposed in the opening, wherein the phase-change material is disposed at least partially above the second electrode. Further, a method of making a memory device is disclosed.
摘要翻译：径向存储器件包括相变材料，与相变材料电连通的第一电极，第一电极具有与相变材料电连通的第一区域。与所述相变材料电连通的第二电极，所述第二电极具有与所述相变材料电连通的第二区域，并且所述第二区域与所述第一区域横向间隔设置。此外，径向存储器件包括设置在第一电极和第二电极之间的电介质层，电介质层具有穿过其中的开口，相变材料设置在开口中，其中相变材料至少部分地设置在第二电极之上。此外，公开了一种制造存储器件的方法。

54. 发明授权

US08350661B2 Breakdown layer via lateral diffusion 有权
标题翻译：击穿层通过横向扩散
公开(公告)号：US08350661B2
公开(公告)日：2013-01-08
申请号：US12471937
申请日：2009-05-26
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Edward J. Spall
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Edward J. Spall
IPC分类号： H01C7/13
CPC分类号： H01C7/006 , G11C13/0004 , H01C17/08 , H01L45/06 , H01L45/12 , H01L45/1246 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1658 , H01L45/1683 , Y10T29/49082
摘要： An electronic device including a breakdown layer having variable thickness. The device includes a variable resistance material positioned between two electrodes. A breakdown layer is interposed between the variable resistance material and one of the electrodes. The breakdown layer has a non-uniform thickness, which serves to bias the breakdown event toward the thinner portions of the breakdown layer. As a result, the placement, size, and number of ruptures in the breakdown layer are more consistent over a series or array of devices. The variable resistance material may be a phase-change material. The variable-thickness breakdown layer may be formed through a diffusion process by introducing a gas containing a resistivity-enhancing species to the environment of segmented variable resistance devices during fabrication. The resistivity-enhancing element penetrates the outer perimeter of the variable resistance material and diffuses toward the interior of the device. The resistivity-enhancing species increases the resistance of the interface between the variable resistance material and the electrode by interacting with the variable resistance material and/or electrode to form a resistive interfacial material. Based on the diffusional nature of the process, the concentration of the resistivity-enhancing species decreases toward the center of the device and as a result, the breakdown layer is thinner toward the center of the device.
摘要翻译：一种包括具有可变厚度的击穿层的电子装置。该装置包括位于两个电极之间的可变电阻材料。在可变电阻材料和其中一个电极之间夹有击穿层。击穿层具有不均匀的厚度，其用于将击穿事件偏向击穿层的较薄部分。因此，击穿层中的断裂位置，尺寸和数量在一系列或多个器件中更为一致。可变电阻材料可以是相变材料。可变厚度击穿层可以通过扩散工艺形成，通过在制造过程中将含有电阻率增强物质的气体引入分段可变电阻器件的环境中。电阻率增强元件穿透可变电阻材料的外周，并向器件的内部扩散。电阻率增强物质通过与可变电阻材料和/或电极相互作用来增加可变电阻材料和电极之间的界面的电阻，以形成电阻界面材料。基于该工艺的扩散性质，电阻率增强物质的浓度朝向器件的中心减小，结果，击穿层朝向器件的中心较薄。

55. 发明申请

US20110194340A1 Phase Change Device with Offset Contact 有权
标题翻译：具有偏移接触的相变装置
公开(公告)号：US20110194340A1
公开(公告)日：2011-08-11
申请号：US13093109
申请日：2011-04-25
申请人： Wolodymyr Czubatyj , Tyler Lowrey
发明人： Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： G11C11/00
CPC分类号： H01L45/1683 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/126
摘要： A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current required to program each memory cell.
摘要翻译：可编程电阻存储器将多个单元组合成包括一个或多个共享电极的块。共享电极配置为每个存储单元的有源区域提供额外的热隔离，从而减少编程每个存储单元所需的电流。

56. 发明授权

US07952087B2 Phase change device with offset contact 有权
标题翻译：相移装置，带偏置接点
公开(公告)号：US07952087B2
公开(公告)日：2011-05-31
申请号：US12152330
申请日：2008-05-14
申请人： Wolodymyr Czubatyj , Tyler Lowrey
发明人： Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： H01L45/00
CPC分类号： H01L45/126 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/141
摘要： A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current required to program each memory cell.
摘要翻译：可编程电阻存储器将多个单元组合成包括一个或多个共享电极的块。共享电极配置为每个存储单元的有源区域提供额外的热隔离，从而减少编程每个存储单元所需的电流。

57. 发明申请

US20100301988A1 Breakdown Layer via Lateral Diffusion 有权
标题翻译：通过侧向扩散分解层
公开(公告)号：US20100301988A1
公开(公告)日：2010-12-02
申请号：US12471937
申请日：2009-05-26
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Edward J. Spall
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Edward J. Spall
IPC分类号： H01C7/00 , H01C17/00
CPC分类号： H01C7/006 , G11C13/0004 , H01C17/08 , H01L45/06 , H01L45/12 , H01L45/1246 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1658 , H01L45/1683 , Y10T29/49082
摘要： An electronic device including a breakdown layer having variable thickness. The device includes a variable resistance material positioned between two electrodes. A breakdown layer is interposed between the variable resistance material and one of the electrodes. The breakdown layer has a non-uniform thickness, which serves to bias the breakdown event toward the thinner portions of the breakdown layer. As a result, the placement, size, and number of ruptures in the breakdown layer are more consistent over a series or array of devices. The variable resistance material may be a phase-change material. The variable-thickness breakdown layer may be formed through a diffusion process by introducing a gas containing a resistivity-enhancing species to the environment of segmented variable resistance devices during fabrication. The resistivity-enhancing element penetrates the outer perimeter of the variable resistance material and diffuses toward the interior of the device. The resistivity-enhancing species increases the resistance of the interface between the variable resistance material and the electrode by interacting with the variable resistance material and/or electrode to form a resistive interfacial material. Based on the diffusional nature of the process, the concentration of the resistivity-enhancing species decreases toward the center of the device and as a result, the breakdown layer is thinner toward the center of the device.
摘要翻译：一种包括具有可变厚度的击穿层的电子装置。该装置包括位于两个电极之间的可变电阻材料。在可变电阻材料和其中一个电极之间夹有击穿层。击穿层具有不均匀的厚度，其用于将击穿事件偏向击穿层的较薄部分。因此，击穿层中的断裂位置，尺寸和数量在一系列或多个器件中更为一致。可变电阻材料可以是相变材料。可变厚度击穿层可以通过扩散工艺形成，通过在制造过程中将含有电阻率增强物质的气体引入分段可变电阻器件的环境中。电阻率增强元件穿透可变电阻材料的外周，并向器件的内部扩散。电阻率增强物质通过与可变电阻材料和/或电极相互作用来增加可变电阻材料和电极之间的界面的电阻，以形成电阻界面材料。基于该工艺的扩散性质，电阻率增强物质的浓度朝向器件的中心减小，结果，击穿层朝向器件的中心较薄。

58. 发明授权

US06567296B1 Memory device 有权
标题翻译：内存设备
公开(公告)号：US06567296B1
公开(公告)日：2003-05-20
申请号：US10041684
申请日：2001-10-24
申请人： Giulio Casagrande , Tyler Lowrey , Roberto Bez , Guy Wicker , Edward Spall , Stephen Hudgens , Wolodymyr Czubatyj
发明人： Giulio Casagrande , Tyler Lowrey , Roberto Bez , Guy Wicker , Edward Spall , Stephen Hudgens , Wolodymyr Czubatyj
IPC分类号： G11C1706
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C2213/72
摘要： A memory device including a plurality of memory cells, a plurality of insulated first regions of a first type of conductivity formed in a chip of semiconductor material, at least one second region of a second type of conductivity formed in each first region, a junction between each second region and the corresponding first region defining a unidirectional conduction access element for selecting a corresponding memory cell connected to the second region when forward biased, and at least one contact for contacting each first region; a plurality of access elements are formed in each first region, the access elements being grouped into at least one sub-set consisting of a plurality of adjacent access elements without interposition of any contact, and the memory device further includes means for forward biasing the access elements of each sub-set simultaneously.
摘要翻译：一种存储器件，包括多个存储器单元，形成在半导体材料的芯片中的第一类型的导电性的多个绝缘的第一区域，在每个第一区域中形成的至少一个第二导电类型的第二区域，每个第二区域和相应的第一区域限定单向传导访问元件，用于当正向偏置时选择连接到第二区域的对应的存储单元，以及用于接触每个第一区域的至少一个触点; 在每个第一区域中形成多个访问元件，所述访问元件被分组成由多个相邻的访问元件组成的至少一个子集，而不插入任何联系人，并且所述存储器设备还包括：每个子集的元素同时进行。

59. 发明授权

US6075719A Method of programming phase-change memory element 有权
标题翻译：编程相变存储元件的方法
公开(公告)号：US6075719A
公开(公告)日：2000-06-13
申请号：US337778
申请日：1999-06-22
申请人： Tyler Lowrey , Guy C. Wicker , Boil Pashmakov , Patrick J. Klersy , Sergey A. Kostylev , Wolodymyr Czubatyj
发明人： Tyler Lowrey , Guy C. Wicker , Boil Pashmakov , Patrick J. Klersy , Sergey A. Kostylev , Wolodymyr Czubatyj
IPC分类号： G11C13/00 , G11C11/00 , G11C11/34 , G11C16/02 , G11C16/34 , H01L45/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0064
摘要： A method of programming an electrically programmable phase-change memory element to the low resistance state. A first pulse of energy sufficient to transform the device from the low to high resistance states is applied, and a second pulse of energy sufficient to transform the device from the high to low resistance states is applied following the first pulse. In another programming method, the present and desired device states are compared, and programming pulses are applied only if the state of the device needs to be changed.
摘要翻译：一种将电可编程相变存储元件编程为低电阻状态的方法。施加足以将器件从低电阻状态转换为高电阻状态的能量的第一脉冲，并且在第一脉冲之后施加足以将器件从高电阻状态转换为低电阻状态的第二能量脉冲。在另一种编程方法中，比较当前和期望的器件状态，并且只有当需要改变器件的状态时才施加编程脉冲。

60. 发明授权

US07978508B2 Reduction of drift in phase-change memory via thermally-managed programming 有权
标题翻译：通过热管理编程减少相变存储器中的漂移
公开(公告)号：US07978508B2
公开(公告)日：2011-07-12
申请号：US12356236
申请日：2009-01-20
申请人： Wolodymyr Czubatyj
发明人： Wolodymyr Czubatyj
IPC分类号： G11C11/00
CPC分类号： G11C13/0035 , G11C7/04 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0083 , G11C2013/0092
摘要： A method of programming a phase-change material. The method includes providing a transformation pulse to the phase-change material, where the transformation pulse includes a programming waveform and a conditioning waveform. The programming waveform provides sufficient energy to alter the structural state of the phase-change material. In one embodiment, the programming waveform alters the volume fractions of crystalline and amorphous phase regions within the phase-change material. The conditioning waveform provides sufficient energy to heat the phase-change material to a temperature above the ambient temperature but below the crystallization temperature of the phase-change material. The method programs the phase-change material to a state that exhibits a reduced time variation of resistance.
摘要翻译：编程相变材料的方法。该方法包括向相变材料提供变换脉冲，其中变换脉冲包括编程波形和调节波形。编程波形提供足够的能量来改变相变材料的结构状态。在一个实施例中，编程波形改变相变材料内的晶体和非晶相区域的体积分数。调节波形提供足够的能量以将相变材料加热到高于环境温度但低于相变材料的结晶温度的温度。该方法将相变材料编程为呈现减小的电阻时间变化的状态。

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