专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20060086713A1 Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers 有权
公开(公告)号：US20060086713A1
公开(公告)日：2006-04-27
申请号：US10974003
申请日：2004-10-26
申请人： Aaron Hunter , Rajesh Ramanujam , Balasubramanian Ramachandran , Cornia Tanasa , Tarpan Dixit
发明人： Aaron Hunter , Rajesh Ramanujam , Balasubramanian Ramachandran , Cornia Tanasa , Tarpan Dixit
IPC分类号： A21B1/00 , A21B1/22 , F27D11/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D21/0014 , H01L21/67115 , H01L21/67248 , H05B3/68
摘要： A rapid thermal processing (RTP) system including a transmission pyrometer monitoring the temperature dependent absorption of the silicon wafer for radiation from the RTP lamps at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized. The transmission pyrometer may be used for closed loop control for thermal treatments below 500° C. or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure with a beam splitter dividing radiation from the wafer.

52. 发明申请

US20050191044A1 Backside rapid thermal processing of patterned wafers 有权
标题翻译：图案化晶片的背面快速热处理
公开(公告)号：US20050191044A1
公开(公告)日：2005-09-01
申请号：US10788979
申请日：2004-02-27
申请人： Wolfgang Aderhold , Sundar Ramamurthy , Aaron Hunter
发明人： Wolfgang Aderhold , Sundar Ramamurthy , Aaron Hunter
IPC分类号： F26B19/00 , F27B5/14 , F27B17/00 , F27D11/00 , F27D19/00 , F27D21/00 , H01L21/00
CPC分类号： H01L21/67115 , F27B17/0025 , F27D19/00 , F27D21/0014
摘要： A apparatus and method of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP). An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. The front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. The wafer is thermally monitored for temperature and reflectivity from the side of the reflector. When the lamps are above the wafer, an edge ring supports the wafer in its edge exclusion zone. Alternatively, a reactor includes upwardly directed lamps and a reflector above and facing the front side of the wafer.
摘要翻译：热处理晶片或其它基板的设备和方法，例如快速热处理（RTP）。辐射灯阵列将辐射引导到晶片的背面以加热晶片。其上形成图案化集成电路的晶片的正面面向辐射反射器。对来自反射器侧的温度和反射率进行热监测晶片。当灯在晶片之上时，边缘环在其边缘排除区域中支撑晶片。或者，反应器包括向上定向的灯和在晶片的正面上方并面向晶片前侧的反射器。

53. 发明授权

US06179466B2 Method and apparatus for measuring substrate temperatures 失效
标题翻译：测量基板温度的方法和装置
公开(公告)号：US06179466B2
公开(公告)日：2001-01-30
申请号：US09044217
申请日：1998-03-18
申请人： Bruce W. Peuse , Gary E. Miner , Mark Yam , Aaron Hunter , Peter Knoot , Jason Mershon
发明人： Bruce W. Peuse , Gary E. Miner , Mark Yam , Aaron Hunter , Peter Knoot , Jason Mershon
IPC分类号： G01J500
CPC分类号： G01J5/08 , G01J5/0003 , G01J5/0007 , G01J5/0815 , G01J5/0818 , G01J5/0821 , G01J5/0846 , G01J5/0887 , G01J5/522 , G01J2005/0048 , G01J2005/068 , H01L22/10 , H01L2924/0002 , H01L2924/00
摘要： A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature and using a first, a second and a third probe to measure the temperature of the substrate. The first probe has a first effective reflectivity and the second probe has a second effective reflectivity. The first probe produces a first temperature indication, the second probe produces a second temperature indication and the third probe produces a third temperature indication. The first and second effective reflectivities may be different. From the first and second temperature indications, a corrected temperature reading for the first probe may be derived, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than an uncorrected readings produced by both the first and second probes. A corrected temperature reading for the third probe may be derived by adjusting the temperature correction calculated for the first probe according to the measured emissivity sensitivity associated with the environment of the third probe to provide a corrected temperature reading that is a more accurate indicator of an actual temperature of the substrate in the environment of the third probe. An apparatus for carrying out the method is also disclosed.
摘要翻译：一种校正用于加热衬底的热处理室中的温度探针读数的方法，包括以下步骤：将衬底加热到工艺温度，并使用第一，第二和第三探针测量衬底的温度。第一探针具有第一有效反射率，第二探针具有第二有效反射率。第一探针产生第一温度指示，第二探针产生第二温度指示，第三探头产生第三温度指示。第一和第二有效的反射率可能不同。从第一和第二温度指示可以导出用于第一探针的校正温度读数，其中校正温度读数是比由第一和第二探针产生的未校正读数更准确地指示衬底的实际温度。可以通过根据与第三探针的环境相关联的测量的发射率灵敏度来调整针对第一探针计算的温度校正值来提供校正温度读数，校正温度读数是实际的更精确的指示符在第三探针的环境中的衬底的温度。还公开了一种用于执行该方法的装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式