专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US4730329A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4730329A
公开(公告)日：1988-03-08
申请号：US869596
申请日：1986-06-02
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/062 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/24 , H01S3/18
CPC分类号： H01S5/227 , H01S5/0035 , H01S5/06213 , H01S5/2206 , H01S5/2237 , H01S5/2275 , H01S5/24
摘要： A semiconductor laser includes a mesa-striped laser structure. A substrate has layered on it an active layer with a refractive index higher than that of, and with an energy gap smaller than that of the substrate. A first electrode is formed under the substrate. A cladding layer of a conductivity type different than that of the substrate overlays the active layer. A multilayered burying crystal includes, at the sides of the mesa-striped laser structure, successively first, second and third burying layers. The first and third burying layers are of the same conductivity type as the substrate. The second burying layer is of a conductivity type different from that of the substrate. A cap layer of a conductivity type different than the substrate covers the upper face of the mesa-striped structure and an upper face of the third burying layer. A second electrode is formed on the cap layer. Injected current flowing into a thyristor composed of the cap layer and the three burying layers can be suppressed.
摘要翻译：半导体激光器包括台面条纹激光器结构。衬底上层叠有折射率高于衬底的能隙的能隙的活性层。第一电极形成在衬底下方。不同于衬底的导电类型的覆层覆盖有源层。多层埋入晶体在台面条纹激光器结构的两侧包括连续的第一，第二和第三掩埋层。第一和第三掩埋层具有与衬底相同的导电类型。第二掩埋层的导电类型与衬底的导电类型不同。不同于衬底的导电类型的覆盖层覆盖台面状结构的上表面和第三掩埋层的上表面。在盖层上形成第二电极。可以抑制流入由盖层和三层埋层构成的晶闸管的注入电流。

52. 发明授权

US4658403A Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics 失效
$Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics$
标题翻译：具有衍射光栅和改善的谐振特性的半导体激光器件中的光学元件
公开(公告)号：US4658403A
公开(公告)日：1987-04-14
申请号：US666979
申请日：1984-10-31
申请人： Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui , Mototaka Taneya
发明人： Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui , Mototaka Taneya
IPC分类号： H01S5/00 , H01S3/067 , H01S5/10 , H01S5/12 , H01S5/227 , H01S3/19
CPC分类号： H01S3/0675 , H01S5/10 , H01S5/12 , H01S5/1032 , H01S5/227 , H01S5/2275
摘要： The disclosure is directed to an improved semiconductor laser device which includes a first light deriving optical waveguide connected approximately perpendicularly to a light exit face at one side, a second light deriving optical waveguide connected approximately perpendicularly to another light exit face at the other side and having an optical axis different from that of the first light deriving optical waveguide, and a light emitting optical waveguide subjected to optical coupling with a periodical diffraction grating for optical resonance, and connected to end portions of the first and second light deriving optical waveguides within the semiconductor laser device.
摘要翻译：本发明涉及一种改进的半导体激光器件，其包括大致垂直于一侧的光出射面连接的第一导光光波导，在另一侧大致垂直于另一光出射面连接的第二导光光波导，并具有与第一导光光波导的光轴不同的光轴和与光谐振的周期性衍射光栅进行光耦合的发光光波导，并且连接到半导体内的第一和第二导光光波导的端部激光装置。

53. 发明授权

US4655597A Micro-displacement measuring apparatus using a semiconductor laser 失效
标题翻译：使用半导体激光器的微位移测量装置
公开(公告)号：US4655597A
公开(公告)日：1987-04-07
申请号：US739013
申请日：1985-05-29
申请人： Osamu Yamamoto , Sadayoshi Matsui , Haruhisa Takiguchi , Hiroshi Hayashi , Nobuyuki Miyauchi
发明人： Osamu Yamamoto , Sadayoshi Matsui , Haruhisa Takiguchi , Hiroshi Hayashi , Nobuyuki Miyauchi
IPC分类号： G01S17/08 , G01B11/00 , G01D5/26 , H01S5/14
CPC分类号： G01D5/26 , H01S5/14
摘要： A micro-displacement measuring apparatus using a semiconductor laser, comprises a compound resonator system containing the semiconductor laser, and a light detector receiving the light from the semiconductor laser, and with the compound resonator system being constructed such that light from said laser irradiates an object to be measured and the reflected light therefrom returns to the semiconductor laser. The light detector detects and measures the number of fluctuations and the level of the optical output of the laser to determine the displacement of the object and of the direction of the displacement of the object, respectively.
摘要翻译：使用半导体激光器的微位移测量装置包括包含半导体激光器的复合谐振器系统和接收来自半导体激光器的光的光检测器，并且复合谐振器系统被构造成使得来自所述激光的光照射物体并且其反射的光返回到半导体激光器。光检测器检测并测量激光的光学输出的波动数量和电平，以分别确定物体的位移和物体的位移方向。

54. 发明授权

US4111879A Composition for inhibiting adhesion of shellfish and algae 失效
标题翻译：用于抑制脂质和阿尔茨海绵胶粘剂的组合物
公开(公告)号：US4111879A
公开(公告)日：1978-09-05
申请号：US736339
申请日：1976-10-28
申请人： Kogoro Mori , Taro Izawa , Yoshifumi Mizuno , Sadayoshi Matsui
发明人： Kogoro Mori , Taro Izawa , Yoshifumi Mizuno , Sadayoshi Matsui
IPC分类号： A01N37/32 , C07D207/44 , C07D207/444 , C07D207/448 , C07D207/452 , C07D207/456 , C09D5/16 , C09D5/14
CPC分类号： C07D207/444 , C07D207/448 , C09D5/1625 , Y10S428/907
摘要： A composition for inhibiting an adhesion of shellfish and algae comprises a resin, a medium and a N-arylmaleimide having the formula ##STR1## wherein X represents hydrogen or halogen atom; Y.sub.1 represents hydrogen, or halogen atom or alkyl, lower alkoxy, nitro, hydroxyl, alkoxycarbonyl, carboxyl, phenyl, phenylamino, alkenyl, thiocyano, sulfone, acetylamino, or sulfamoyl group; Y.sub.2 represents hydrogen or halogen atom or alkyl, lower alkoxy, nitro or hydroxyl group and Y.sub.3 represents hydrogen or halogen atom or dialkylamino group.The inhibiting composition is coated on a fishing net, a ship bottom or other apparatus in water.

55. 发明授权

US06206969B1 Method and apparatus for fabricating semiconductor 失效
标题翻译：用于制造半导体的方法和装置
公开(公告)号：US06206969B1
公开(公告)日：2001-03-27
申请号：US08853863
申请日：1997-05-09
申请人： Kosei Takahashi , Sadayoshi Matsui
发明人： Kosei Takahashi , Sadayoshi Matsui
IPC分类号： C23C1600
CPC分类号： C30B23/02 , C23C14/564 , C23C14/566
摘要： A semiconductor fabrication apparatus for evaporating a material in a growth chamber by a molecular beam epitaxy technique to fabricate a semiconductor is provided. The apparatus includes: an ultra-high vacuum chamber including a liquid nitrogen cold trap therein, the ultra-high vacuum chamber being connected to the growth chamber via a valve; a first evacuation system including an ultra-high vacuum evacuation system, the first evacuation system being connected to the ultra-high vacuum chamber; and a second evacuation system including an evacuation system capable of conducting an evacuation operation even in a low vacuum condition, the second evacuation system being connected to the liquid nitrogen cold trap. The first evacuation system and the second evacuation system independently conduct the respective evacuation operations.
摘要翻译：提供了一种用于通过分子束外延技术蒸发生长室中的材料以制造半导体的半导体制造装置。该装置包括：超高真空室，其中包含液氮冷阱，超高真空室经由阀连接到生长室; 包括超高真空排气系统的第一抽空系统，所述第一抽空系统连接到所述超高真空室; 以及第二排气系统，其包括即使在低真空条件下能够进行排气操作的排气系统，所述第二抽空系统连接到所述液氮冷阱。第一疏散系统和第二疏散系统独立进行各自的撤离操作。

56. 发明授权

US5491106A Method for growing a compound semiconductor and a method for producing a semiconductor laser 失效
标题翻译：生长化合物半导体的方法和半导体激光器的制造方法
公开(公告)号：US5491106A
公开(公告)日：1996-02-13
申请号：US97316
申请日：1993-07-23
申请人： Akinori Seki , Hiroyuki Hosoba , Toshio Hata , Masafumi Kondo , Takahiro Suyama , Sadayoshi Matsui
发明人： Akinori Seki , Hiroyuki Hosoba , Toshio Hata , Masafumi Kondo , Takahiro Suyama , Sadayoshi Matsui
IPC分类号： H01L21/20 , H01L21/203 , H01S5/00 , H01S5/223 , H01S5/323 , H01L21/302
CPC分类号： H01S5/32308 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02631 , H01L21/02658 , H01S5/2231 , H01S5/32316
摘要： A method for growing a compound semiconductor layer of Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) on a compound semiconductor substrate uses a molecular beam epitaxial apparatus, the method including the steps of providing the substrate having a GaAs layer on an upper surface thereof, thermally etching the GaAs layer by heating the substrate at a temperature and irradiating the GaAs layer with a gallium molecular beam and an arsenic molecular beam to expose the upper surface of the substrate, and growing the Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) layer on the upper surface of the substrate.
摘要翻译：在化合物半导体衬底上生长Al x Ga 1-x As（0≤x≤1）的化合物半导体层的方法使用分子束外延装置，该方法包括以下步骤：将具有GaAs层的衬底通过在温度下加热衬底并用镓分子束和砷分子束照射GaAs层来暴露衬底的上表面，并且生长Al x Ga 1-x As（0 < = x <1）层。

57. 发明授权

US5360762A Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device 失效
标题翻译：半导体激光器件以及包括半导体激光器件的化合物半导体器件的制造方法
公开(公告)号：US5360762A
公开(公告)日：1994-11-01
申请号：US080004
申请日：1993-06-21
申请人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Takahiro Suyama , Sadayoshi Matsui
发明人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Takahiro Suyama , Sadayoshi Matsui
IPC分类号： H01L21/20 , H01L21/205 , H01L31/105 , H01L31/18 , H01L33/00 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02631 , H01L21/02658 , H01L31/105 , H01L31/1844 , H01L33/0062 , H01S5/2231 , H01S2304/02 , H01S5/0421 , H01S5/209 , H01S5/3211 , Y02E10/544 , Y02P70/521 , Y10S148/095
摘要： On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purl fled, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.
摘要翻译：在GaAs衬底（AlYGa1-Y）上，形成与衬底晶格匹配的0.5In0.5P晶体层（0≤Y≤1）。通过在层叠基板的加热的同时将As分子束照射到晶体层中的In蒸发的温度，将结晶层的表面附近的部分变更为AlYGa1-YAs晶体层（0 < / = Y <1），其上形成有AlXGa1-XAs晶体层（0≤X≤1）的几个分子的厚度。由于AlYGa1-YAs晶体层的表面已经被剥离，所形成的AlXGa1-XAs晶体层具有高结晶度，从而能够以高效率制造发光二极管，半导体激光器件等。

58. 发明授权

US4908830A Buried type semiconductor laser device 失效
标题翻译：埋式半导体激光器件
公开(公告)号：US4908830A
公开(公告)日：1990-03-13
申请号：US313982
申请日：1989-02-22
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

59. 发明授权

US4890293A Semiconductor laser device 失效
公开(公告)号：US4890293A
公开(公告)日：1989-12-26
申请号：US255049
申请日：1988-10-07
申请人： Mototaka Taneya , Kosei Takahashi , Toshiro Hayakawa , Sadayoshi Matsui , Mitsuhiro Matsumoto , Hiroyuki Hosoba
发明人： Mototaka Taneya , Kosei Takahashi , Toshiro Hayakawa , Sadayoshi Matsui , Mitsuhiro Matsumoto , Hiroyuki Hosoba
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/34 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/20 , H01S5/209 , H01S5/22 , H01S5/3211 , H01S5/3432 , H01S5/4031
摘要： A semiconductor laser device comprising a first layer that is of a first conductivity type; a second layer that is disposed on the first layer, the second layer having a forbidden bandgap smaller than that of the first layer and having a refraction index larger than that of the first layer; a third layer that is of a second conductivity type; the third layer being disposed over the second layer, having a forbidden bandgap larger than that of the second layer, and having a refraction index smaller than that of the second layer; a fourth layer that functions as a quantum wall, the fourth layer being disposed between the second and third layers and the thickness of the fourth layer being the de Broglie's wavelength or less; and at least one striped mesa, the lower portion of which is constituted by the third layer, wherein the fourth layer has a forbidden bandgap that is larger than that of the energy of photons generated by the second layer, and moreover the fourth layer has the etching characteristics that are different from those of the third layer positioned just above the fourth layer.

60. 发明授权

US4870651A Semiconductor light-emitting apparatus 失效
标题翻译：半导体发光装置
公开(公告)号：US4870651A
公开(公告)日：1989-09-26
申请号：US127836
申请日：1987-12-02
申请人： Mototaka Taneya , Mitsuhiro Matsumoto , Sadayoshi Matsui
发明人： Mototaka Taneya , Mitsuhiro Matsumoto , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/14 , H01S5/40
CPC分类号： H01S5/14 , H01S5/4062
摘要： A semiconductor light-emitting apparatus comprising a semiconductor laser array device with a plurality of lasing filaments and a mode-mixing device with a striped optical waveguide that attains an optical phase-coupling with the semiconductor laser array device, whereby beams from the semiconductor laser array device are emitted from the light-emitting facet of the semiconductor light-emitting apparatus via the mode-mixing device, thereby attaining a near-field pattern with a minimized ripple rate on the optical intensity.
摘要翻译：一种半导体发光装置，包括具有多个激光灯丝的半导体激光器阵列器件和具有带状光波导的模式混合器件，其与半导体激光器阵列器件实现光学相位耦合，由此来自半导体激光器阵列的光束器件经由模拟混合器件从半导体发光装置的发光面发射，从而获得具有最小纹波率的近场图案对光强度的影响。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式