专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20050048400A1 Resist resin 有权
公开(公告)号：US20050048400A1
公开(公告)日：2005-03-03
申请号：US10937832
申请日：2004-09-10
申请人： Takeshi Okino , Koji Asakawa , Naomi Shida , Toru Ushirogouchi , Satoshi Saito
发明人： Takeshi Okino , Koji Asakawa , Naomi Shida , Toru Ushirogouchi , Satoshi Saito
IPC分类号： G03F7/038 , G03F7/039 , G03C1/76
CPC分类号： G03F7/0382 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.

52. 发明授权

US06541597B2 Resin useful for resist, resist composition and pattern forming process using the same 有权
公开(公告)号：US06541597B2
公开(公告)日：2003-04-01
申请号：US09884977
申请日：2001-06-21
申请人： Takeshi Okino , Koji Asakawa , Naomi Shida , Toru Ushirogouchi , Satoshi Saito
发明人： Takeshi Okino , Koji Asakawa , Naomi Shida , Toru Ushirogouchi , Satoshi Saito
IPC分类号： C08G6302
CPC分类号： G03F7/0382 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.

53. 发明授权

US06291129B1 Monomer, high molecular compound and photosensitive composition 失效
标题翻译：单体，高分子化合物和感光组合物
公开(公告)号：US06291129B1
公开(公告)日：2001-09-18
申请号：US09143533
申请日：1998-08-28
申请人： Naomi Shida , Toru Ushirogouchi , Koji Asakawa , Takeshi Okino , Shuji Hayase , Yoshihiko Nakano , Makoto Nakase
发明人： Naomi Shida , Toru Ushirogouchi , Koji Asakawa , Takeshi Okino , Shuji Hayase , Yoshihiko Nakano , Makoto Nakase
IPC分类号： G03C173
CPC分类号： G03F7/0397 , C08F246/00 , G03F7/0045 , G03F7/039 , G03F7/0758 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： A monomer represented by the following general formula (m-1): wherein R is a group having an alicyclic skeleton, R2s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group, X1 is a bivalent organic group containing a heteroatom, j is an integer of 0 to 3, and R1 is a group selected from the following groups, a monovalent organic group having Si (R1-1), and —(X2)k—R4—(X3)m—C(R6)3 (R1-2), wherein X2 and X3 are a bivalent organic group containing a heteroatom, k and m are an integer of 0 to 3, R4 is a bivalent alkyl group, R6s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group.
摘要翻译：由以下通式（m-1）表示的单体：其中R是具有脂环骨架的基团，R 2可以相同或不同，分别为氢原子，卤素原子或一价有机基团，X 1为二价有机基团含有杂原子，j为0〜3的整数，R1为选自下列基团的基团，具有Si（R1-1）的一价有机基团，X2和X3中的任一个为含有杂原子的二价有机基团，k m为0〜3的整数，R4为二价烷基，R6可以相同或不同，分别为氢原子，卤素原子或一价有机基团。

54. 发明授权

US06280897B1 Photosensitive composition, method for forming pattern using the same, and method for manufacturing electronic parts 失效
标题翻译：光敏组合物，使用其形成图案的方法，以及电子部件的制造方法
公开(公告)号：US06280897B1
公开(公告)日：2001-08-28
申请号：US08997623
申请日：1997-12-23
申请人： Koji Asakawa , Naoko Kihara , Naomi Shida , Toru Ushirogouchi , Takeshi Okino , Makoto Nakase , Takuya Naito , Satoshi Saito
发明人： Koji Asakawa , Naoko Kihara , Naomi Shida , Toru Ushirogouchi , Takeshi Okino , Makoto Nakase , Takuya Naito , Satoshi Saito
IPC分类号： G03F7004
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： A photosensitive composition comprising a polymer having a repeating segment represented by the following general formula (1A) and a compound which is capable of generating an acid by irradiation of an actinic radiation. wherein R11 is a hydrogen atom, an aliphatic hydrocarbon group, an alcoxy group, a halogen atom or a cyano group, R12 is an aliphatic hydrocarbon group or a cyclic olefin, R13 is either one of (a) a straight-chain olefin having 2 to 12 carbon atoms, a cyclic olefin or a heterocyclic group and (b) a hydrocarbon group represented by — (CH2)m—(m is an integer of 3 to 9), and R14 is a hydrophilic group.
摘要翻译：一种感光性组合物，其含有具有下述通式（1A）表示的重复链段的聚合物和能够通过照射光化辐射而产生酸的化合物。其中，R 11为氢原子，脂肪族烃基，烷氧基基团，卤素原子或氰基，R 12是脂族烃基或环状烯烃，R 13是（a）具有2〜12个碳原子的直链烯烃，环状烯烃或杂环基中的任一种和（ b）由 - （CH 2）m - （m为3〜9的整数）表示的烃基，R 14为亲水性基团。

55. 发明授权

US09324914B2 Semiconductor light-emitting device and process for production thereof 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US09324914B2
公开(公告)日：2016-04-26
申请号：US12712693
申请日：2010-02-25
申请人： Akira Fujimoto , Ryota Kitagawa , Koji Asakawa
发明人： Akira Fujimoto , Ryota Kitagawa , Koji Asakawa
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40
CPC分类号： H01L33/38 , H01L33/40 , H01L2933/0083
摘要： A semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and suitable for lighting instruments such as lights and lamps. The semiconductor device includes a metal electrode layer provided with openings, and is so large in size that the electrode layer has, for example, an area of 1 mm2 or more. The openings have a mean diameter of 10 nm to 2 μm, and penetrate through the metal electrode layer. The metal electrode layer can be produced by use of self-assembling of block copolymer or by nano-imprinting techniques.
摘要翻译：即使电力增加也能够保持高亮度强度的半导体发光装置，适用于灯具等照明装置。半导体器件包括设置有开口的金属电极层，其尺寸如此大，使得电极层具有例如1mm 2以上的面积。开口的平均直径为10nm〜2μm，贯穿金属电极层。金属电极层可以通过使用嵌段共聚物的自组装或通过纳米压印技术来制备。

56. 发明授权

US08921887B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08921887B2
公开(公告)日：2014-12-30
申请号：US13221319
申请日：2011-08-30
申请人： Kumi Masunaga , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
发明人： Kumi Masunaga , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L33/62 , H01L33/38
CPC分类号： H01L33/405 , H01L33/38 , H01L2933/0016 , H01L2933/0083
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分沿着从第一半导体层到第二半导体层的方向。多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒金属部分。

57. 发明申请

US20120132948A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120132948A1
公开(公告)日：2012-05-31
申请号：US13229972
申请日：2011-09-12
申请人： Shinji Nunotani , Masaaki Ogawa , Koji Asakawa , Ryota Kitagawa , Akira Fujimoto , Takanobu Kamakura
发明人： Shinji Nunotani , Masaaki Ogawa , Koji Asakawa , Ryota Kitagawa , Akira Fujimoto , Takanobu Kamakura
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitter, a first and a second electrode layer, a pad electrode and an auxiliary electrode portion. The emitter includes a first semiconductor layer provided on one side of the emitter, a second semiconductor layer provided on one other side of the emitter, and a light emitting layer provided between the first and second semiconductor layers. The first electrode layer is provided on opposite side of the second semiconductor layer from the first semiconductor layer and includes a metal layer and a plurality of apertures penetrating through the metal layer. The second electrode layer is electrically continuous with the first semiconductor layer. The pad electrode is electrically continuous with the first electrode layer. The auxiliary electrode portion is electrically continuous with the first electrode layer and extends in a second direction orthogonal to the first direction.
摘要翻译：根据一个实施例，半导体发光器件包括光发射器，第一和第二电极层，焊盘电极和辅助电极部分。发射极包括设置在发射极一侧的第一半导体层，设置在发射极的另一侧的第二半导体层以及设置在第一和第二半导体层之间的发光层。第一电极层设置在第二半导体层的与第一半导体层相反的一侧上，并且包括金属层和贯穿金属层的多个孔。第二电极层与第一半导体层电连接。焊盘电极与第一电极层电连接。辅助电极部分与第一电极层电连续并沿与第一方向正交的第二方向延伸。

58. 发明申请

US20120056155A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120056155A1
公开(公告)日：2012-03-08
申请号：US13037990
申请日：2011-03-01
申请人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
发明人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
IPC分类号： H01L33/06 , H01L33/38 , B82Y99/00 , B82Y40/00
CPC分类号： H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.
摘要翻译：半导体发光器件包括结构体，第一电极层和第二电极层。结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一半导体层和第二半导体层之间的发光层。第一电极层包括金属部分，多个第一开口部分和至少一个第二开口部分。金属部分沿着从第一半导体层朝向第二半导体层的方向具有不小于10纳米且不大于200纳米的厚度。多个第一开口部分的圆当量直径不小于10纳米且不超过1微米。至少一个第二开口部分具有大于1微米且不超过30微米的圆当量直径。

59. 发明申请

US20110220936A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHTING INSTRUMENT EMPLOYING THE SAME AND PROCESS FOR PRODUCTION OF THE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件，使用其的照明器具和用于生产半导体发光器件的工艺
公开(公告)号：US20110220936A1
公开(公告)日：2011-09-15
申请号：US12876318
申请日：2010-09-07
申请人： Akira Fujimoto , Ryota Kitagawa , Eishi Tsutsumi , Koji Asakawa
发明人： Akira Fujimoto , Ryota Kitagawa , Eishi Tsutsumi , Koji Asakawa
IPC分类号： H01L33/40 , H01L21/283
CPC分类号： H01L33/58 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/44
摘要： A semiconductor light-emitting device according to the embodiment includes a substrate, a compound semiconductor layer, a metal electrode layer provided with particular openings, a light-extraction layer, and a counter electrode. The light-extraction layer has a thickness of 20 to 120 nm and covers at least partly the metal part of the metal electrode layer; or otherwise the light-extraction layer has a rugged structure and covers at least partly the metal part of the metal electrode layer. The rugged structure has projections so arranged that their summits are positioned at intervals of 100 to 600 nm, and the heights of the summits from the surface of the metal electrode layer are 200 to 700 nm.
摘要翻译：根据实施例的半导体发光器件包括衬底，化合物半导体层，设置有特定开口的金属电极层，光提取层和对电极。光提取层的厚度为20〜120nm，至少部分覆盖金属电极层的金属部分。否则光提取层具有坚固的结构并且至少部分地覆盖金属电极层的金属部分。凹凸结构具有突出部，使得它们的顶点以100至600nm的间隔定位，并且来自金属电极层的表面的顶点的高度为200至700nm。

60. 发明申请

US20090042325A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090042325A1
公开(公告)日：2009-02-12
申请号：US12246099
申请日：2008-10-06
申请人： Akira Fujimoto , Koji Asakawa , Kenichi Ohashi
发明人： Akira Fujimoto , Koji Asakawa , Kenichi Ohashi
IPC分类号： H01L21/02
CPC分类号： H01L33/22
摘要： In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a conical portion constituting a refractive index gradient structure. The mesa portion, cylindrical portion, and conical portion are arranged in this order from the light extracted surface. The period between the convex structures is longer than 1/(the refractive index of an external medium+the refractive index of the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength. The circle-equivalent average diameter of the cylindrical portion is ⅓ to 9/10 of that of the bottom of the mesa portion.
摘要翻译：在半导体发光器件中，半导体发光元件具有在其上形成有多个凸起结构的光提取表面。凸起结构各自具有构成折射率梯度结构的圆锥台面部分，构成衍射光栅结构的圆筒部分和构成折射率梯度结构的锥形部分。台面部分，圆柱形部分和锥形部分从光提取表面依次排列。凸结构之间的周期长于发射波长的1 /（外部介质的折射率+凸起结构的折射率）等于或小于发射波长。圆筒部的圆当量平均直径为台面部的底部的圆当量平均直径的1/3〜9/10。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式