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51. 发明授权

US08609447B2 Method of manufacturing surface emitting laser, and surface emitting laser, surface emitting laser array, optical scanning device and image forming apparatus 有权
标题翻译：表面发射激光器和表面发射激光器，表面发射激光器阵列，光学扫描装置和成像装置的制造方法
公开(公告)号：US08609447B2
公开(公告)日：2013-12-17
申请号：US13258568
申请日：2010-03-15
申请人： Hiroyoshi Shouji , Shunichi Sato , Akihiro Itoh , Kazuhiro Harasaka
发明人： Hiroyoshi Shouji , Shunichi Sato , Akihiro Itoh , Kazuhiro Harasaka
IPC分类号： H01L21/00 , H01L27/15 , H01L29/22 , H01L33/00
CPC分类号： B32B37/14 , H01S5/0282 , H01S5/0425 , H01S5/18313 , H01S5/1835 , H01S5/18355 , H01S5/18358 , H01S5/18369 , H01S5/18377 , H01S5/18391 , H01S5/3202 , H01S5/423
摘要： A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed.
摘要翻译：公开的制造表面发射激光器的方法包括在层叠体的上表面上层叠透明电介质层; 在所述电介质层的上表面上形成第一抗蚀剂图案，所述第一抗蚀剂图案包括限定台面结构的外周的图案和保护对应于相对较高反射率部分之一的区域和相对低反射率的图案包括在发射区域中的速率部分; 通过使用第一抗蚀剂图案作为蚀刻掩模来蚀刻介电层; 以及形成保护对应于整个发射区域的区域的第二抗蚀剂图案。这些步骤在形成台面结构之前进行。

52. 发明申请

US20130070039A1 SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNER, IMAGE FORMING APPARATUS, AND METHOD FOR MANUFACTURING SURFACE-EMITTING LASER DEVICE 有权
标题翻译：表面发射激光器件，表面发射激光阵列，光学扫描仪，图像形成装置以及用于制造表面发射激光器件的方法
公开(公告)号：US20130070039A1
公开(公告)日：2013-03-21
申请号：US13379160
申请日：2011-05-18
申请人： Kazuhiro Harasaka , Shunichi Sato , Masahiro Hayashi , Akihiro Itoh , Katsunari Hanaoka
发明人： Kazuhiro Harasaka , Shunichi Sato , Masahiro Hayashi , Akihiro Itoh , Katsunari Hanaoka
IPC分类号： B41J2/435 , G02B26/08 , H01S5/00
CPC分类号： G03G15/04 , B41J2/442 , B41J2/471 , G02B26/10 , H01S5/18 , H01S5/18313 , H01S5/18355 , H01S5/18377 , H01S5/18391 , H01S5/18394 , H01S5/3202 , H01S5/423
摘要： A surface-emitting laser device includes a transparent dielectric layer provided in an emitting region and configured to cause a reflectance at a peripheral part to be different from a reflectance at a central part in the emitting region. In the surface-emitting laser device, the thickness of a contact layer is different between a region having a relatively high reflectance and a region having a relatively low reflectance in the emitting region. The contact layer is provided on the high refractive index layer of an upper multilayer film reflecting mirror, and the total optical thickness of the high refractive index layer and the contact layer in the region having the relatively low reflectance is deviated from an odd number multiple of a one quarter oscillation wavelength of laser light emitted from the emitting region.
摘要翻译：表面发射激光器件包括设置在发射区域中并被配置为使得在周边部分处的反射率与发射区域中的中心部分的反射率不同的透明电介质层。在表面发射激光器件中，接触层的厚度在具有较高反射率的区域和在发射区域中反射率相对较低的区域之间是不同的。接触层设置在上层多层膜反射镜的高折射率层上，并且具有较低反射率的区域中的高折射率层和接触层的总光学厚度偏离了从发射区域发射的激光的四分之一振荡波长。

53. 发明授权

US08743924B2 Surface-emission laser diode and fabrication process thereof 有权
标题翻译：表面发射激光二极管及其制造工艺
公开(公告)号：US08743924B2
公开(公告)日：2014-06-03
申请号：US13764167
申请日：2013-02-11
申请人： Shunichi Sato , Akihiro Itoh , Naoto Jikutani
发明人： Shunichi Sato , Akihiro Itoh , Naoto Jikutani
IPC分类号： H01S5/00
CPC分类号： H01S5/343 , H01S5/02284 , H01S5/0425 , H01S5/18311 , H01S5/18347 , H01S5/18383 , H01S5/2205 , H01S5/423
摘要： In a surface-emission laser diode, there is provided, between an active layer and a semiconductor layer that contains Al, Ga and As as major components, a semiconductor layer containing Al, In and P as major components such that the semiconductor layer containing Al, In and P as major components is provided adjacent to the semiconductor layer that contains Al, Ga and As as major components. Further, an interface between the semiconductor layer containing Al, Ga and As as major components and the semiconductor layer containing Al, In and P as major components is coincident to a location of a node of electric field strength distribution.
摘要翻译：在表面发射激光二极管中，在有源层和含有Al，Ga和As作为主要成分的半导体层之间提供包含Al，In和P作为主要成分的半导体层，使得含有Al 作为主要成分，以与Al，Ga，As为主要成分的半导体层相邻配置In和P为主要成分。此外，含有Al，Ga和As作为主要成分的半导体层与以Al，In和P为主要成分的半导体层之间的界面与电场强度分布的节点的位置一致。

54. 发明申请

US20140064313A1 SURFACE-EMISSION LASER DIODE AND FABRICATION PROCESS THEREOF 有权
标题翻译：表面发射激光二极管及其制造工艺
公开(公告)号：US20140064313A1
公开(公告)日：2014-03-06
申请号：US13764167
申请日：2013-02-11
申请人： Shunichi Sato , Akihiro Itoh , Naoto Jikutani
发明人： Shunichi Sato , Akihiro Itoh , Naoto Jikutani
IPC分类号： H01S5/343
CPC分类号： H01S5/343 , H01S5/02284 , H01S5/0425 , H01S5/18311 , H01S5/18347 , H01S5/18383 , H01S5/2205 , H01S5/423
摘要： In a surface-emission laser diode, there is provided, between an active layer and a semiconductor layer that contains AI, Ga and As as major components, a semiconductor layer containing AI, In and P as major components such that the semiconductor layer containing AI, In and P as major components is provided adjacent to the semiconductor layer that contains AI, Ga and As as major components. Further, an interface between the semiconductor layer containing AI, Ga and As as major components and the semiconductor layer containing AI, In and P as major components is coincident to a location of a node of electric field strength distribution.
摘要翻译：在面发光激光二极管中，主要成分为Al，Ga，As作为主成分的有源层与半导体层之间设有包含Al，In和P作为主要成分的半导体层，以作为主要成分的含有Al，Ga，As的半导体层附近设置In和P作为主要成分。此外，含有Al，Ga和As作为主要成分的半导体层和含有Al，In和P作为主要成分的半导体层之间的界面与电场强度分布的节点的位置一致。

55. 发明授权

US08537870B2 Laser diode and semiconductor light-emitting device producing visible-wavelength radiation 失效
公开(公告)号：US08537870B2
公开(公告)日：2013-09-17
申请号：US13188208
申请日：2011-07-21
申请人： Naoto Jikutani , Shunichi Sato
发明人： Naoto Jikutani , Shunichi Sato
IPC分类号： H01S5/00
CPC分类号： H01S5/2202 , B82Y20/00 , H01S5/22 , H01S5/2206 , H01S5/2209 , H01S5/221 , H01S5/2231 , H01S5/3201 , H01S5/3434
摘要： A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

56. 发明申请

US20130077647A1 SURFACE-EMISSION LASER DEVICES, SURFACE-EMISSION LASER ARRAY HAVING THE SAME, ELECTROPHOTOGRAPHIC SYSTEM AND OPTICAL COMMUNICATION SYSTEM 有权
标题翻译：表面发射激光器件，表面发射激光阵列，电子照相系统和光通信系统
公开(公告)号：US20130077647A1
公开(公告)日：2013-03-28
申请号：US13682014
申请日：2012-11-20
申请人： Naoto JIKUTANI , Shunichi Sato
发明人： Naoto JIKUTANI , Shunichi Sato
IPC分类号： H01S5/18
CPC分类号： H01S5/18 , B41J2/45 , B82Y20/00 , H01S5/0014 , H01S5/0655 , H01S5/18308 , H01S5/18313 , H01S5/1833 , H01S5/18333 , H01S5/18358 , H01S5/18369 , H01S5/18391 , H01S5/3432 , H01S5/423 , H01S2301/166
摘要： A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation layer is provided between a location in the reflection layer corresponding to a fourth period node of the standing wave distribution of the electric field of the oscillating light and a location in the reflection layer adjacent to the foregoing fourth period node in the direction away from the active layer and corresponding to an anti-node of the standing wave distribution of the electric field of the oscillation light.
摘要翻译：表面发射激光器件包括有源层，设置在有源层的两侧的空腔间隔层，设置在空腔间隔层的各侧的反射层，反射在有源层中振荡的振荡光的反射层和选择性氧化层。选择氧化层设置在反射层中的与振荡光的电场的驻波分布的第四周期节点相对应的位置和与前述第四周期节点相邻的反射层中的位置在远离的方向来自有源层，对应于振荡光的电场的驻波分布的反节点。

57. 发明授权

US08293555B2 Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system 有权
标题翻译：半导体发光器件，表面发射激光二极管及其制造装置，制造方法，光模块和光通信系统
公开(公告)号：US08293555B2
公开(公告)日：2012-10-23
申请号：US13165027
申请日：2011-06-21
申请人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
发明人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , C23C16/301 , C23C16/54 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L33/025 , H01L33/10 , H01L33/32 , H01S5/0014 , H01S5/02284 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18394 , H01S5/3211 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
摘要翻译：半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。

58. 发明授权

US08199788B2 Surface-emission laser diode and fabrication process thereof 有权
标题翻译：表面发射激光二极管及其制造工艺
公开(公告)号：US08199788B2
公开(公告)日：2012-06-12
申请号：US12691476
申请日：2010-01-21
申请人： Shunichi Sato , Akihiro Itoh , Naoto Jikutani
发明人： Shunichi Sato , Akihiro Itoh , Naoto Jikutani
IPC分类号： H01S5/00
CPC分类号： H01S5/343 , H01S5/02284 , H01S5/0425 , H01S5/18311 , H01S5/18347 , H01S5/18383 , H01S5/2205 , H01S5/423
摘要： A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of AlxGa1-xAs (0
摘要翻译：表面发射激光二极管包括在半导体衬底上的空腔区域，并且包括含有产生激光和阻挡层的至少一个量子阱活性层的有源层，在有源层附近提供间隔层，并形成的至少一种材料，上部和下部反射器设置在空腔区域的顶部和底部，空腔区域和上部和下部反射器在半导体衬底上形成台面结构，上部和下部反射器为由半导体分布布拉格反射体形成，其具有周期性的折射率变化并通过光波的干涉反射入射光，至少一部分半导体分布布拉格反射器由Al x Ga 1-x As（0 < x和nlE; 1）和AlyGa1-yAs（0＆amp; nlE; y

59. 发明授权

US07940827B2 Vertical-cavity, surface-emission type laser diode and fabrication process thereof 有权
标题翻译：垂直腔，表面发射型激光二极管及其制造工艺
公开(公告)号：US07940827B2
公开(公告)日：2011-05-10
申请号：US12393701
申请日：2009-02-26
申请人： Shunichi Sato , Takashi Takahashi , Naoto Jikutani , Morimasa Kaminishi , Akihiro Itoh
发明人： Shunichi Sato , Takashi Takahashi , Naoto Jikutani , Morimasa Kaminishi , Akihiro Itoh
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/18308 , H01S5/3072 , H01S5/3201 , H01S5/3211 , H01S5/3218 , H01S5/3219 , H01S5/32366 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/34386 , H01S5/423
摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.
摘要翻译：垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在有源区中的有源层和下反射器。

60. 发明授权

US07787511B2 Array of surface-emitting laser diodes having reduced device resistance and capable of performing high output operation and method of fabricating the surface-emitting laser diode 有权
标题翻译：阵列的表面发射激光二极管具有降低的器件电阻并能够执行高输出操作和制造表面发射激光二极管的方法
公开(公告)号：US07787511B2
公开(公告)日：2010-08-31
申请号：US11224051
申请日：2005-09-13
申请人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi
发明人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/02284 , H01S5/18313 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/3095 , H01S5/34306 , H01S5/3432 , H01S5/34326 , H01S5/423 , H01S2301/166 , H01S2304/04
摘要： A surface-emitting laser diode device that oscillates in a direction perpendicular to the substrate is provided. This surface-emitting laser diode device includes: an active layer; a resonator structure including a first distributed Bragg reflector and a second distributed Bragg reflector that face each other and sandwich the active layer; a hole passage that extends from a first electrode to the active layer; an electron passage that extends from a second electrode to the active layer; a hole restricting structure that is located in the hole passage and defines a region for confining holes to the active layer; and an optical mode control structure that includes a non-oxide region provided in the resonator structure and an oxide region surrounding the non-oxide region, each region containing Al as a constituent element. In this surface-emitting laser diode, the area of the non-oxide region is smaller than the area of the hole restricting structure.
摘要翻译：提供了在垂直于衬底的方向上振荡的表面发射激光二极管器件。该表面发射激光二极管器件包括：有源层; 谐振器结构，包括彼此面对并夹持有源层的第一分布布拉格反射器和第二分布布拉格反射器; 从第一电极延伸到有源层的孔通道; 从第二电极延伸到有源层的电子通道; 孔限制结构，其位于孔通道中并限定用于将孔限定到活性层的区域; 以及光学模式控制结构，其包括设置在谐振器结构中的非氧化物区域和包围非氧化物区域的氧化物区域，每个区域包含Al作为构成元素。在该表面发射激光二极管中，非氧化物区域的面积小于孔限制结构的面积。

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