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51. 发明专利

JPH033373A SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
公开(公告)号：JPH033373A
公开(公告)日：1991-01-09
申请号：JP13886989
申请日：1989-05-31
申请人： TOSHIBA CORP
发明人： ISHIKAWA MASAYUKI , NARIZUKA SHIGEYA , NISHIKAWA YUKIE , SUGAWARA HIDETO
IPC分类号： H01L33/14 , H01L33/30 , H01L33/38
摘要： PURPOSE:To improve current distribution in a light emitting part composed of InGaAlP, and enhance light-leading-out efficiency and luminance, by selectively forming a specified intermediate energy gap layer of first conductivity type between a first conductivity type InGaAlP layer of the light emitting part and a substrate. CONSTITUTION:A compound semiconductor substrate 11 of first conductivity type, at least a first conductivity type InGaAIP layer 13 and a second conductivity type InGaAlP layer 15 which form a PN junction on the substrate II are laminated, thereby forming a light emitting part 22. A semiconductor light emitting device is provided with the above light emitting part 22 and an electrode 17 for current constriction formed thereon. In said device, between the first conductivity type InGaAIP layer 13 of the light emitting part 22 and the substrate 11, a first conductivity type intermediate energy gap layer 12 is selectively formed, the energy gap of which layer is larger than the substrate 11 and smaller than the first conductivity type InCaAlP layer 13. In at least a part under the electrode 17, the first conductivity type InGaAlP layer 13 and the substrate 11 are directly brought into contact with each other. For example, the above intermediate energy gap layer 12 is an InGaP layer.

52. 发明专利

JPH02220488A SEMICONDUCTOR LASER DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02220488A
公开(公告)日：1990-09-03
申请号：JP4020189
申请日：1989-02-22
申请人： TOSHIBA CORP
发明人： SUZUKI MARIKO , ITAYA KAZUHIKO , ISHIKAWA MASAYUKI , HATAGOSHI GENICHI , WATANABE YUKIO
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323
摘要： PURPOSE:To enhance an element characteristic and a yield by specifying a relationship of individual compositions of y, z of Al in a first In1-w(Ga1-yAly)wP clad layer of a second conductivity type and a second ln1-w(Ga1-zAlz)wP clad layer of the second conductivity type. CONSTITUTION:A relationship of individual compositions y, z of Al in a first In1-w(Ga1-yAly)wP clad layer 16 of a second conductivity type and a second In1-w(Ga1-zAlz)wP clad layer 17 is set to 0.6

53. 发明专利

JPH01202881A MANUFACTURE OF SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
公开(公告)号：JPH01202881A
公开(公告)日：1989-08-15
申请号：JP2649088
申请日：1988-02-09
申请人： TOSHIBA CORP
发明人： NITTA KOICHI , ISHIKAWA MASAYUKI
IPC分类号： H01L21/308 , H01S5/00
摘要： PURPOSE:To improve yield, current constriction efficiency and reliability by providing a region in which impurity is diffused to an intermediate band gap layer which is not covered with a current constriction layer and by providing a contact layer on the intermediate band gap layer which is not covered with the current constriction layer and on the current constriction layer. CONSTITUTION:Of clad layers 43, 45, a current constriction layer 47 which is partially removed is provided at least on a second clad layer 45 which is located on the opposite side of a substrate. A region 49 whereon impurity of the same conduction type as the second clad layer 45 is diffused is provided from a region 52 where the current constriction layer 47 is removed and to the second clad layer 45. Furthermore, a contact layer 48 of the same conduction type of the second clad layer 42 is provided on the current constriction layer 47 which has the diffused region 49. In this way, highly efficient and reliable visible light semiconductor light emitting element can be acquired which is provided with high yield and good current constriction.

54. 发明专利

JPH01184974A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH01184974A
公开(公告)日：1989-07-24
申请号：JP826688
申请日：1988-01-20
申请人： TOSHIBA CORP
发明人： OKUDA HAJIME , ISHIKAWA MASAYUKI , SHIOZAWA HIDEO
IPC分类号： H01S5/00
摘要： PURPOSE:Not only to obtain a laser excellent in current constriction, low in threshold value, and high in reliability but also enable the mass production of the laser at a low cost by a method wherein ion implantation is performed into the part of an intermediate band gap layer other than a current injection region. CONSTITUTION:An n-GaAs buffer layer 102, an n-(Al0.5Ga0.5)0.5In0.5P clad layer 103, an undoped Ga0.5In0.5P active layer 104, a p-(Al0.5Ga0.5)0.5In0.5P clad layer 105, a p-Ga0.5In0.5P intermediate layer band gap layer 106, and a p-GaAs contact layer 107 are formed on an n-GaAs substrate 101. And, protons are injected into both the sides of a stripe through an ion-implantation so as to penetrate the intermediate band gap layer 106 (as shown by region 108), a p-type electrode 109 is formed on the RGaAs contact layer 107, and an n-type electrode 110 is formed on the substrate 101 side. When a current is made to flow through this laser, the oscillation occurs at the active layer 104 in width nearly equal to that of the stripe. Therefore, the current is completely prevented from spreading in the RGa0.5In0.5P intermediate band gap layer 106, so that the oscillating threshold is low.

55. 发明专利

JPS6398928A BUFFER TYPE GAS BREAKER 失效
公开(公告)号：JPS6398928A
公开(公告)日：1988-04-30
申请号：JP24300586
申请日：1986-10-15
申请人： TOSHIBA CORP
发明人： ISHIKAWA MASAYUKI , IKEDA HISATOSHI , MIZOGUCHI HITOSHI , YAGIU SATORU
IPC分类号： H01H33/91

56. 发明专利

JPS6398927A BUFFER TYPE GAS BREAKER 失效
公开(公告)号：JPS6398927A
公开(公告)日：1988-04-30
申请号：JP24300486
申请日：1986-10-15
申请人： TOSHIBA CORP
发明人： ISHIKAWA MASAYUKI , IKEDA HISATOSHI , MIZOGUCHI HITOSHI , YAGIU SATORU
IPC分类号： H01H33/91

57. 发明专利

JPS6388724A BUFFER TYPE GAS BREAKER 失效
公开(公告)号：JPS6388724A
公开(公告)日：1988-04-19
申请号：JP23315386
申请日：1986-10-02
申请人： TOSHIBA CORP
发明人： ISHIKAWA MASAYUKI , MIZOGUCHI HITOSHI , IKEDA HISATOSHI , YAGIU SATORU
IPC分类号： H01H33/91

58. 发明专利

JPS6240120A GAS BREAKER 失效
公开(公告)号：JPS6240120A
公开(公告)日：1987-02-21
申请号：JP17758185
申请日：1985-08-14
申请人： TOSHIBA CORP
发明人： ISHIKAWA MASAYUKI , IKEDA HISATOSHI , MIZOGUCHI HITOSHI , YAGIU SATORU , EDOMON CHIYUURII
IPC分类号： H01H33/915 , H01H33/98

59. 发明专利

JPS6240119A BUFFER TYPE GAS BREAKER 失效
公开(公告)号：JPS6240119A
公开(公告)日：1987-02-21
申请号：JP17758285
申请日：1985-08-14
申请人： TOSHIBA CORP
发明人： IKEDA HISATOSHI , ISHIKAWA MASAYUKI , MIZOGUCHI HITOSHI , YAGIU SATORU , EDOMON CHIYUURII
IPC分类号： H01H33/88 , H01H33/91

60. 发明专利

JPS6210824A BUFFER TYPE GAS BREAKER 失效
公开(公告)号：JPS6210824A
公开(公告)日：1987-01-19
申请号：JP14834485
申请日：1985-07-08
申请人： TOSHIBA CORP
发明人： IKEDA HISATOSHI , ISHIKAWA MASAYUKI , MIZOGUCHI HITOSHI , YAGIU SATORU , EDOMON CHIYUURII
IPC分类号： H01H33/88

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