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51. 发明申请

US20110259750A1 METHOD OF DIRECT PLATING OF COPPER ON A RUTHENIUM ALLOY 审中-公开
标题翻译：铜在铜合金上的直接镀覆方法
公开(公告)号：US20110259750A1
公开(公告)日：2011-10-27
申请号：US13150850
申请日：2011-06-01
申请人： Hooman Hafezi , Aron Rosenfeld , Zhi-Wen Sun , Hua Chung , Lei Zhu
发明人： Hooman Hafezi , Aron Rosenfeld , Zhi-Wen Sun , Hua Chung , Lei Zhu
IPC分类号： C25D3/38 , C25D5/02 , C25D5/34
CPC分类号： C25D5/34 , C25D3/38 , C25D5/10 , C25D5/18 , C25D5/54 , H01L21/2885 , H01L21/76843 , H01L21/76846 , H01L21/76861 , H01L21/76862 , H01L21/76868 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method is disclosed for depositing a copper seed layer onto a substrate surface. In one embodiment, the method includes providing a substrate having a barrier layer disposed on a substrate surface, wherein the barrier layer has a barrier surface comprising a material selected from the group consisting of cobalt, ruthenium, tungsten, titanium, and a compound of two or more thereof, and exposing the substrate to a non-complexed, acid electrochemical plating solution with a plating bias applied across the substrate surface to deposit a copper-containing seed layer directly on the barrier surface without intervening layer disposed therebetween.
摘要翻译：公开了一种将铜籽晶层沉积在基底表面上的方法。在一个实施例中，该方法包括提供具有设置在衬底表面上的阻挡层的衬底，其中阻挡层具有包含选自钴，钌，钨，钛和两种化合物的材料的阻挡表面或更多，并且将衬底暴露于非复合的酸性电化学电镀溶液，其中跨越衬底表面施加电镀偏压，以将含铜种子层直接沉积在阻挡表面上，而不设置介于其间的中间层。

52. 发明申请

US20070289871A1 Electrolytic capacitor for electric field modulation 有权
标题翻译：电场电容器用于电场调制
公开(公告)号：US20070289871A1
公开(公告)日：2007-12-20
申请号：US11452839
申请日：2006-06-14
申请人： Hooman Hafezi , Aron Rosenfeld
发明人： Hooman Hafezi , Aron Rosenfeld
IPC分类号： C25B9/00 , C25D5/00
CPC分类号： C25D5/18 , C25D17/002 , C25D17/007 , C25D21/12
摘要： A method and apparatus for adjusting an electric field of an electrochemical processing cell are provided. In one embodiment, a capacitive element is disposed in the processing solution. The strength, shape, or direction of the electric field in the processing solution may be modulated by charging and discharging the capacitive element in a controlled manner. Because the electric field is modulated with out passing a current from the capacitive element to the processing solution, electrochemical reactions do not occur on the interface of the capacitive element and the processing solution, thus, reduces complications caused by unwanted electrochemical reactions.
摘要翻译：提供了一种用于调整电化学处理单元的电场的方法和装置。在一个实施例中，电容元件设置在处理溶液中。可以通过以受控的方式对电容元件充电和放电来调制处理溶液中的电场的强度，形状或方向。由于电场通过电流从电容元件传递到处理溶液而被调制，所以在电容元件和处理溶液的界面上不会发生电化学反应，从而减少由不需要的电化学反应引起的并发症。

53. 发明申请

US20060269658A1 Method to deposit organic grafted film on barrier layer 有权
标题翻译：将有机接枝膜沉积在阻挡层上的方法
公开(公告)号：US20060269658A1
公开(公告)日：2006-11-30
申请号：US11403566
申请日：2006-04-13
申请人： Hooman Hafezi , Aron Rosenfeld , Michael Yang
发明人： Hooman Hafezi , Aron Rosenfeld , Michael Yang
IPC分类号： H05K3/00
CPC分类号： H01L21/76868 , H01L21/288 , H01L21/2885 , H01L21/76846 , H01L21/76873
摘要： Generally, the process includes depositing a barrier layer on a feature formed in a dielectric layer, decorating the barrier layer with a metal, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier layer formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.
摘要翻译：通常，该方法包括在形成在电介质层中的特征上沉积阻挡层，用金属装饰阻挡层，进行接枝过程，引发铜层，然后通过使用大块铜填充工艺来填充该特征。根据本文描述的方面形成的铜特征对于形成在半导体衬底上的阻挡层具有期望的粘合性能，并且证明在形成在衬底上的制造器件中增强的电迁移和应力迁移。

54. 发明申请

US20060243598A1 Auxiliary electrode encased in cation exchange membrane tube for electroplating cell 有权
标题翻译：辅助电极封装在电镀槽的阳离子交换膜管中
公开(公告)号：US20060243598A1
公开(公告)日：2006-11-02
申请号：US11362432
申请日：2006-02-24
申请人： Saravjeet Singh , Hooman Hafezi , Manoocher Birang , Aron Rosenfeld , Joseph Behnke
发明人： Saravjeet Singh , Hooman Hafezi , Manoocher Birang , Aron Rosenfeld , Joseph Behnke
IPC分类号： C25D3/56
CPC分类号： C25D17/10 , C25D5/04 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/007 , C25D17/02 , H01L21/2885
摘要： A method and apparatus for plating a metal onto a substrate. One embodiment of the invention provides an apparatus for electrochemically plating a substrate. The apparatus comprises a fluid basin configured to retain a plating solution therein, an anode assembly disposed in the fluid basin, a substrate support member configured to support the substrate and contact the substrate electrically, and an encased auxiliary electrode assembly disposed in the fluid basin. The encased auxiliary electrode assembly generally comprises an auxiliary electrode disposed in a protective tube.
摘要翻译：一种用于将金属电镀到基底上的方法和装置。本发明的一个实施例提供了一种用于对基底进行电化学电镀的装置。该装置包括被配置为在其中保持电镀溶液的流体池，设置在流体池中的阳极组件，被配置为支撑基板并电连接基板的基板支撑构件以及设置在流体池中的封装辅助电极组件。包封的辅助电极组件通常包括设置在保护管中的辅助电极。

55. 发明授权

US09107806B2 Ingestible device with pharmaceutical product 有权
标题翻译：具有药物产品的可食用装置
公开(公告)号：US09107806B2
公开(公告)日：2015-08-18
申请号：US13521993
申请日：2011-11-18
申请人： Hooman Hafezi , Raymond Schmidt
发明人： Hooman Hafezi , Raymond Schmidt
IPC分类号： A61K9/22 , A61J3/07 , A61M31/00 , A61K9/00 , A61K9/48
CPC分类号： A61M31/002 , A61B5/14503 , A61B5/4833 , A61J3/071 , A61K9/0097 , A61K9/4808 , A61M2205/0238 , A61M2205/33 , A61M2205/50 , A61M2205/82 , A61M2207/00 , Y10T29/49826
摘要： A system and a manufacturing process are disclosed in accordance with the present invention that protect an electronic device and allows for placement or combination of the device within a pharmaceutical product or capsule. The system includes circuitry and components that can be placed within certain environments. The device includes an assembly including an electronic unit, a flexible membrane secured to the unit, and a protective coating.
摘要翻译：根据本发明公开了一种系统和制造方法，其保护电子设备并允许将该装置放置或组合在药物产品或胶囊内。该系统包括可放置在某些环境中的电路和组件。该装置包括一个组件，它包括一个电子单元，一个固定在该单元上的柔性膜和一个保护涂层。

56. 发明授权

US08786049B2 Solid-state thin-film capacitor 有权
标题翻译：固态薄膜电容器
公开(公告)号：US08786049B2
公开(公告)日：2014-07-22
申请号：US13260078
申请日：2010-07-23
申请人： Hooman Hafezi
发明人： Hooman Hafezi
IPC分类号： H01L21/02
CPC分类号： H01G4/33
摘要： Solid-state thin-film capacitors are provided. Aspects of the solid-state thin-film capacitors include a first electrode layer of a transition metal, a dielectric layer of an oxide of the transition metal, and a second electrode layer of a metal oxide. Also provided are methods of making the solid-state thin-film capacitors, as well as devices that include the same. The capacitor may have one or more cathodic arc produced structures, i.e., structures produced using a cathodic arc deposition process. The structures may be stress-free metallic structures, porous layers and layers displaying crenulations. Aspects of the invention further include methods of producing capacitive structures using chemical vapor deposition and/or by sputter deposition.
摘要翻译：提供固态薄膜电容器。固体薄膜电容器的方面包括过渡金属的第一电极层，过渡金属的氧化物的电介质层和金属氧化物的第二电极层。还提供了制造固态薄膜电容器的方法以及包括它们的装置。电容器可以具有一个或多个阴极电弧产生结构，即使用阴极电弧沉积工艺制造的结构。这些结构可以是无应力的金属结构，多孔层和显示出齿的层。本发明的方面还包括使用化学气相沉积和/或通过溅射沉积制造电容结构的方法。

57. 发明授权

US08597186B2 Pharmaceutical dosages delivery system 有权
公开(公告)号：US08597186B2
公开(公告)日：2013-12-03
申请号：US12673150
申请日：2010-01-05
申请人： Hooman Hafezi , Gregory Moon , Kityee Au-Yeung , Robert Duck , Maria Casillas Holen
发明人： Hooman Hafezi , Gregory Moon , Kityee Au-Yeung , Robert Duck , Maria Casillas Holen
IPC分类号： A61B5/07
CPC分类号： A61B5/07 , A61B5/1473 , A61B5/4839 , A61J3/071 , A61K9/0097 , A61M31/00 , A61M31/002
摘要： Pharmaceutical delivery systems for delivering dosages according to the present invention include a carrier component and a cap configured to seal an internal volume of the carrier component, wherein the cap includes a device that produces a unique current signature. Dosages prepared to be delivered according to embodiments of the invention find use in a variety of different applications, including clinical trials.

58. 发明申请

US20060283716A1 Method of direct plating of copper on a ruthenium alloy 审中-公开
标题翻译：在钌合金上直接电镀铜的方法
公开(公告)号：US20060283716A1
公开(公告)日：2006-12-21
申请号：US11373635
申请日：2006-03-09
申请人： Hooman Hafezi , Aron Rosenfeld , Zhi-Wen Sun , Hua Chung , Lei Zhu
发明人： Hooman Hafezi , Aron Rosenfeld , Zhi-Wen Sun , Hua Chung , Lei Zhu
IPC分类号： C25D3/38
CPC分类号： C25D5/34 , C25D3/38 , C25D5/10 , C25D5/18 , C25D5/54 , H01L21/2885 , H01L21/76843 , H01L21/76846 , H01L21/76861 , H01L21/76862 , H01L21/76868 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method is disclosed for depositing a copper seed layer onto a substrate surface, generally onto a barrier layer that is an alloy of a group VIII metal and a refractory metal. In one aspect, the alloy consists of at least 50% ruthenium and the balance a copper diffusion barrier material. A copper layer is electroplated on the alloy directly. In one aspect, the surface of the barrier layer is conditioned prior to plating to improve adhesion and reduce the critical current density for plating on the barrier layer. The conditioning may include cathodic pre-treatment or a plasma pre-treatment in a hydrogen or hydrogen/helium mixture. In one aspect, the substrate surface is immersed in an acidic plating bath and a nucleation waveform is applied to form a seed layer. In another aspect, the substrate is immersed in a neutral or alkaline copper solution that includes complexed copper ions.
摘要翻译：公开了一种用于将铜籽晶层沉积到基底表面上的方法，通常在作为VIII族金属和难熔金属的合金的阻挡层上。一方面，合金由至少50％的钌组成，余量为铜扩散阻挡材料。铜层直接电镀在合金上。在一个方面，阻隔层的表面在镀覆之前被调节以提高粘附性并降低在阻挡层上电镀的临界电流密度。调理可以包括阴极预处理或氢或氢/氦混合物中的等离子体预处理。在一个方面，将基材表面浸入酸性电镀浴中并施加成核波形以形成种子层。另一方面，将衬底浸入包括络合的铜离子的中性或碱性铜溶液中。

59. 发明申请

US20060175201A1 Immersion process for electroplating applications 审中-公开
标题翻译：电镀应用的浸渍工艺
公开(公告)号：US20060175201A1
公开(公告)日：2006-08-10
申请号：US11052443
申请日：2005-02-07
申请人： Hooman Hafezi , Joseph Behnke , Aron Rosenfeld , Timothy Webb , Joseph Yahalom , Christopher McGuirk
发明人： Hooman Hafezi , Joseph Behnke , Aron Rosenfeld , Timothy Webb , Joseph Yahalom , Christopher McGuirk
IPC分类号： C25D5/18
CPC分类号： C25D5/18 , C25D5/34 , C25D7/123 , H01L21/2885 , H01L21/76877
摘要： A method for immersing a substrate into a plating solution. In one embodiment, the method includes applying a first waveform to the substrate as the substrate is being immersed into the plating solution, stopping the application of the first waveform to the substrate as soon as the substrate is fully immersed inside the plating solution, and applying a second waveform to the substrate prior to the substrate being situated into a plating position.
摘要翻译：将基板浸入电镀液中的方法。在一个实施例中，该方法包括当衬底浸入电镀溶液中时将第一波形施加到衬底，一旦衬底完全浸入电镀溶液中，就停止向衬底施加第一波形，并施加在衬底位于电镀位置之前的到衬底的第二波形。

60. 发明申请

US20120302999A1 Ingestible Device with Pharmaceutical Product 有权
标题翻译：具有药物产品的可食用装置
公开(公告)号：US20120302999A1
公开(公告)日：2012-11-29
申请号：US13521993
申请日：2011-11-18
申请人： Hooman Hafezi , Raymond Schmidt
发明人： Hooman Hafezi , Raymond Schmidt
IPC分类号： A61M37/00 , B23P11/00
CPC分类号： A61M31/002 , A61B5/14503 , A61B5/4833 , A61J3/071 , A61K9/0097 , A61K9/4808 , A61M2205/0238 , A61M2205/33 , A61M2205/50 , A61M2205/82 , A61M2207/00 , Y10T29/49826
摘要： A system and a manufacturing process are disclosed in accordance with the present invention that protect an electronic device and allows for placement or combination of the device within a pharmaceutical product or capsule. The system includes circuitry and components that can be placed within certain environments. The device includes an assembly including an electronic unit, a flexible membrane secured to the unit, and a protective coating.
摘要翻译：根据本发明公开了一种系统和制造方法，其保护电子设备并允许将该装置放置或组合在药物产品或胶囊内。该系统包括可放置在某些环境中的电路和组件。该装置包括一个组件，它包括一个电子单元，一个固定在该单元上的柔性膜和一个保护涂层。

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