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51. 发明授权

US06815867B2 Substrate usable for an acoustic surface wave device, a method for fabricating the same substrate and an acoustic surface wave device having the same substrate 失效
标题翻译：用于声表面波装置的基板，用于制造相同基板的方法和具有相同基板的声表面波装置
公开(公告)号：US06815867B2
公开(公告)日：2004-11-09
申请号：US09997997
申请日：2001-11-30
申请人： Tomohiko Shibata , Yukinori Nakamura , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Yukinori Nakamura , Mitsuhiro Tanaka
IPC分类号： H01L4108
CPC分类号： H03H9/02543 , Y10T29/42
摘要： A base material made of C-faced sapphire single crystal is set on a susceptor installed in a reactor arranged horizontally. Then, a trimethyl-aluminum and an ammonia are introduced as raw material gases into the reactor and supplied onto the substrate, to form an AlN film. In this case, the temperature of the base material is set to 1100° C. or over, and the ratio (V raw material gas/III raw material gas) is set to 800 or below, and the forming pressure is set within a range of 7-17 Torr. As a result, the crystallinity of the AlN film is developed to 90 arcsec or below in FWHM of X-ray rocking curve, and the surface flatness of the AlN film is developed to 20 Å or below. Therefore, a substrate composed of the base material and the AlN film is preferably usable for an acoustic surface wave device, and if the substrate is employed, the deviation from the theoretical propagation velocity is set to 1.5 m/sec or below.
摘要翻译：将由C面蓝宝石单晶构成的基材设置在安装在水平排列的反应器中的基座上。然后，将三甲基铝和氨作为原料气体引入反应器中并供给到基板上，形成AlN膜。在这种情况下，将基材的温度设定为1100℃以上，将原料气体/ III原料气体的比率设定为800以下，将成形压力设定在 7-17 Torr。结果，在X射线摇摆曲线的FWHM中，AlN膜的结晶度显现为90弧秒以下，AlN膜的表面平坦度显现为20以下。因此，由基材和AlN膜构成的基板优选用于声表面波器件，如果使用基板，则与理论传播速度的偏差设定为1.5m / sec以下。

52. 发明授权

US06781164B2 Semiconductor element 有权
标题翻译：半导体元件
公开(公告)号：US06781164B2
公开(公告)日：2004-08-24
申请号：US10690290
申请日：2003-10-21
申请人： Yuji Hori , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
发明人： Yuji Hori , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
IPC分类号： H01L31072
CPC分类号： H01L29/66318 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/66462 , H01L29/66856
摘要： An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.
摘要翻译：将作为底层的AlN膜外延生长在具有10 11 / cm 2以下的位错密度和90秒以下的结晶度的X射线的半峰全宽（FWHM）的基板上（002）反射的摇摆曲线。然后，在AlN膜上，将n-GaN膜外延生长为位错密度为10 10 / cm 2以下的导电层，在半高宽度下为150秒以下的结晶度（FWHM ）（002）反射的X射线摇摆曲线，以制造半导体元件。

53. 发明授权

US06770914B2 III nitride semiconductor substrate for ELO 有权
标题翻译： III型氮化物半导体衬底
公开(公告)号：US06770914B2
公开(公告)日：2004-08-03
申请号：US10163256
申请日：2002-06-05
申请人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya , Mitsuhiro Tanaka
IPC分类号： H01L2922
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A III nitride semiconductor substrate for ELO is provided for forming a III nitride film whose surface is controlled independent of the film's thickness. A III nitride underlayer including at least Al is directly formed on a base made of e.g. a sapphire single crystal, and not formed through a buffer layer formed at a low temperature. After that patterns made of e.g SiO2 are formed on the underlayer.
摘要翻译：提供了用于ELO的III族氮化物半导体衬底，用于形成其表面被独立于膜的厚度来控制的III族氮化物膜。至少包含Al的III族氮化物底层直接形成在由例如玻璃基材制成的基材上。蓝宝石单晶，并且不通过在低温下形成的缓冲层形成。之后，在底层上形成由例如SiO 2制成的图案。

54. 发明授权

US06759715B2 Epitaxial base substrate and epitaxial substrate 有权
标题翻译：外延基底和外延基底
公开(公告)号：US06759715B2
公开(公告)日：2004-07-06
申请号：US10042949
申请日：2002-01-09
申请人： Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda , Yukinori Nakamura
发明人： Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda , Yukinori Nakamura
IPC分类号： H01L2972
CPC分类号： C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： A III nitride buffer film including at least Al element and having a screw-type dislocation density of 1×108/cm2 or less is formed on a base made from a sapphire single crystal, etc., to fabricate an epitaxial base substrate. Then, a III nitride underfilm is formed on the III nitride buffer film, to fabricate an epitaxial substrate.
摘要翻译：在由蓝宝石单晶等制成的基底上形成至少包含Al元素并且具有1×10 8 / cm 2以下的螺旋型位错密度的III族氮化物缓冲膜，以制造外延基底基质。然后，在III族氮化物缓冲膜上形成III族氮化物底膜，制造外延衬底。

55. 发明授权

US06703255B2 Method for fabricating a III nitride film 有权
标题翻译： III族氮化物膜的制造方法
公开(公告)号：US06703255B2
公开(公告)日：2004-03-09
申请号：US10102545
申请日：2002-03-20
申请人： Tomohiko Shibata , Shigeaki Sumiya , Keiichiro Asai , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Shigeaki Sumiya , Keiichiro Asai , Mitsuhiro Tanaka
IPC分类号： H01L2100
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L33/0075
摘要： Plural island-shaped crystal portions are formed on a first Al-including nitride base. The island-shaped crystal portions are made of a second nitride, and have a nitride film including a third nitride epitaxially grown thereon. The island-shaped crystal portions function as nuclei during the growth of the third nitride-including film.
摘要翻译：多个岛状晶体部分形成在第一含Al氮化物基底上。岛状晶体部分由第二氮化物制成，并且具有包含外延生长在其上的第三氮化物的氮化物膜。岛状晶体部分在第三含氮化物膜的生长期间用作核。

56. 发明授权

US06583468B2 Semiconductor element 有权
公开(公告)号：US06583468B2
公开(公告)日：2003-06-24
申请号：US10007099
申请日：2001-12-04
申请人： Yuji Hori , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
发明人： Yuji Hori , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
IPC分类号： H01L2976
CPC分类号： H01L29/66318 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/66462 , H01L29/66856
摘要： An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.

57. 发明授权

US06573535B2 Semiconductor light-emitting element 有权
公开(公告)号：US06573535B2
公开(公告)日：2003-06-03
申请号：US09997996
申请日：2001-11-30
申请人： Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
发明人： Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
IPC分类号： H01L3112
CPC分类号： H01L33/325 , H01L33/08
摘要： In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.

58. 发明授权

US06492191B2 Method for manufacturing an A1xGayInzN film using a metal film for heat radiation 有权
标题翻译：使用金属膜进行热辐射制造AlxGayInzN膜的方法
公开(公告)号：US06492191B2
公开(公告)日：2002-12-10
申请号：US09812618
申请日：2001-03-20
申请人： Tomohiko Shibata , Keiichiro Asai , Teruyo Nagai , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Keiichiro Asai , Teruyo Nagai , Mitsuhiro Tanaka
IPC分类号： H01L2100
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007 , Y10T428/12403
摘要： A semiconductor device has a substrate body, an AlxGayInzN (x+y+z=1; x,y,z≧0) film epitaxially grown directly on the substrate body or epitaxially grown via a buffer layer on the substrate body, and a metal film provided on the lower surface of the substrate body. During manufacture of the semiconductor device, the substrate body is heated uniformly and efficiently by thermal radiation of a heater.
摘要翻译：半导体器件具有衬底主体，直接在衬底主体上外延生长或通过衬底主体上的缓冲层外延生长的Al x Ga y In z N（x + y + z = 1; x，y，z> = 0）膜，设置在基板主体的下表面上的金属膜。在制造半导体器件期间，通过加热器的热辐射来均匀且有效地加热衬底体。

59. 发明授权

US08872226B2 Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device 有权
标题翻译：用于半导体器件的III族氮化物外延衬底，半导体器件，以及用于半导体器件的III族氮化物外延衬底的制造方法
公开(公告)号：US08872226B2
公开(公告)日：2014-10-28
申请号：US12884516
申请日：2010-09-17
申请人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mitsuhiro Tanaka
发明人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mitsuhiro Tanaka
IPC分类号： H01L29/66
CPC分类号： H01L21/0262 , C30B19/00 , C30B23/02 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02378 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/201 , H01L29/7786
摘要： Provided is an epitaxial substrate having excellent two-dimensional electron gas characteristics and reduced internal stress due to strains. A channel layer is formed of a first group III nitride represented by Inx1Aly1Gaz1N (x1+y1+z1=1) so as to have a composition in a range determined by x1=0 and 0≦y1≦0.3. A barrier layer is formed of a second group III nitride represented by Inx2Aly2Gaz2N (x2+y2+z2=1) so as to have a composition, in a ternary phase diagram with InN, AlN and GaN being vertices, in a range surrounded by five straight lines determined in accordance with the composition (AlN molar fraction) of the first group III nitride.
摘要翻译：提供了具有优异的二维电子气特性和由于应变引起的内部应力降低的外延基板。沟道层由Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）表示的第一III族氮化物形成，以使得其组成在由x1 = 0和0＆lt; 1lE; y1＆nlE; 0.3确定的范围内。阻挡层由Inx2Aly2Gaz2N（x2 + y2 + z2 = 1）表示的第二III族氮化物形成，以具有以InN，AlN和GaN为顶点的三元相图中的组成，包围在五个根据第一III族氮化物的组成（AlN摩尔分数）确定的直线。

60. 发明申请

US20140123158A1 MOLD FOR TAPE-SHAPED OPTICAL RECORDING MEDIUM, TAPE-SHAPED OPTICAL RECORDING MEDIUM, AND CUTTING DEVICE THEREFOR 审中-公开
标题翻译：胶带形光学记录介质，带状光学记录介质及其切割装置的模具
公开(公告)号：US20140123158A1
公开(公告)日：2014-05-01
申请号：US14128418
申请日：2012-07-26
申请人： Yoshifumi Makino , Mitsuhiro Tanaka , Kenji Takehana
发明人： Yoshifumi Makino , Mitsuhiro Tanaka , Kenji Takehana
IPC分类号： G11B7/003 , G11B3/00
CPC分类号： G11B7/0031 , G11B3/00 , G11B7/24009 , G11B7/263 , Y10T83/141
摘要： There is provided a mold for a tape-shaped optical recording medium with which precise cutting can be performed along a cutting guide groove, the mold forming a recording groove in a tape-shaped optical recording medium, and having a plurality of recording and reproduction bumps that form a recording and reproduction groove, and a guide whose shape is different from that of the recording and reproduction bumps.
摘要翻译：提供了一种用于带状光学记录介质的模具，可以沿着切割引导槽进行精确的切割，模具在带状光学记录介质中形成记录槽，并且具有多个记录和再现凸块形成记录和再现凹槽，以及与记录和再现凸块的形状不同的引导件。

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